INFINEON IRF3710ZPbF,IRF3710ZSPbF,IRF3710ZLPbF Datasheet

g

PD - 95466

AUTOMOTIVE MOSFET

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

Description

Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea­tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com­bine to make this design an extremely efficient
and reliable device for use in Automotive applica­tions and a wide variety of other applications.

G

TO-220AB

IRF3710Z

IRF3710ZPbF

IRF3710ZSPbF

IRF3710ZLPbF

HEXFET® Power MOSFET

D

S

IRF3710ZS

D2Pak

V

R

DS(on)

DSS

= 100V

= 18mΩ

ID = 59A

TO-262

IRF3710ZL

Absolute Maximum Ratings

ID @ TC = 25°C

I

@ TC = 100°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS

E

(tested)

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation W

Linear Derating Factor W/°C
Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally Limited)

le Pulse Avalanche Energy Tested Value

Sin

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

R

JC

θ

R

CS

θ

R

JA

θ

R

JA

θ

Junct ion-to-Case ––– 0.92 °C/W
Case-to-Sink, Flat, Greased Surface

Junct ion-to-Ambient ––– 62

Junct ion-to-Ambient (PCB Mount, steady state)

Parameter Units

@ 10V (Silicon Limited)

GS

@ 10V (See Fig. 9)

GS

c

d

i

c

h

See Fig.12a,12b,15,16

300 (1.6mm from case )

Max.

59

42

240

160

1.1

± 20

170

200

-55 to + 175

10 lbf•in (1.1N•m)

Parameter Typ. Max. Units

0.50 –––

j

––– 40

A

mJ

A

mJ

HEXFET® is a registered trademark of International Rectifier.

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6/30/04

IRF3710Z/S/LPbF

/

g

g

Static @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆ΒV
R

DS(on)

V

GS(th)

DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 14 18
Gate Threshold Voltage 2.0 ––– 4.0 V

fs Forward Transconductance 35 ––– ––– S

I

I

DSS

GSS

Drain-to-Source Leakage Current ––– ––– 20 µA

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leaka
Q
Q
Q
t
t
t
t
L

L

C
C
C
C
C
C

g

gs

gd

d(on)

r

d(off)

f

D

S

iss

oss

rss

oss

oss

oss

eff.

Total Gate Charge ––– 82 120 nC

Gate-to-Source Charge ––– 19 28

Gate-to-Drain ("Miller") Charge ––– 27 40

Turn-On Delay Time ––– 17 ––– ns

Rise Time ––– 77 –––

Turn-Off Delay Time ––– 41 –––

Fall Time ––– 56 –––

Internal Drain Inductance ––– 4.5 ––– nH Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 2900 ––– pF

Output Capacitance ––– 290 –––

Reverse Transfer Capacitance ––– 150 –––

Output Capacitance ––– 1130 –––

Output Capacitance ––– 170 –––

Effective Output Capacitance ––– 280 –––

Parameter Min. Typ. Max. Units

––– ––– 250

e ––– ––– -200

Conditions

VGS = 0V, ID = 250µA
Reference to 25°C, I
V

= 10V, ID = 35A

Ω

m

GS

VDS = VGS, ID = 250µA
V

= 50V, ID = 35A

DS

V

= 100V, VGS = 0V

DS

V

= 100V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 35A

D

= 80V

V

DS

V

= 10V

GS

V

DD

I

= 35A

D

R

G

V

GS

6mm (0.25in.)

and center of die contact
V

GS

V

DS

ƒ = 1.0MHz, See Fig. 5
V

GS

V

GS

VGS = 0V, VDS = 0V to 80V

f

= 50V

= 6.8Ω

= 10V

f

= 0V

= 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz
= 0V, VDS = 80V, ƒ = 1.0MHz

= 1mA

D

f

D

G

S

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Continuous Source Current ––– ––– 59

(Body Diode) A

Pulsed Source Current ––– ––– 240

(Body Diode)

c

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge ––– 100 160 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

Parameter Min. Typ. Max. Units

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.27mH,

Jmax

= 35A, VGS =10V. Part not

AS

recommended for use above this value.

 I

≤ 35A, di/dt ≤ 380A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

MOSFET symbol

showing the
integral reverse

p-n junction diode.
––– ––– 1.3 V
–––5075ns

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 Limited by T

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

TJ = 25°C, IS = 35A, VGS = 0V

T

= 25°C, IF = 35A, VDD = 25V

J

di/dt = 100A/µs

avalanche performance.

 This value determined from sample failure population. 100%

,

tested to this value in production.

 This is applied to D

2

Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.

Conditions

f

.

DSS

G

2 www.irf.com

D

S

f

IRF3710Z/S/LPbF

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,
I

D

1000

100

10

1

0.1

TOP 15V

BOTTOM 4.5V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH
Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,
I

1000

TOP 15V

100

BOTTOM 4.5V

10

D

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH
Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

)

Α

(

t

100

n
e

r

r
u

C
e

c

r

10

u
o
S

­o

t

­n

i
a

r

1

D
,

D

I

TJ = 25°C

V

0

2 4 6 8 10

20µs PULSE WIDTH

DS

TJ = 175°C

= 25V

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

120

)
S

(

100

e
c
n
a

t
c

80

u
d
n
o
c
s
n

60

a

r
T

d

r
a

40

w

r
o
F
,

S

20

F

G

0

0 10 20 30 40 50 60 70

VDS = 15V
20µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

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IRF3710Z/S/LPbF

100000

10000

)
F
p

(
e
c
n
a

t

i

1000

c
a
p
a

C
,

C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

= C

gs

gd

ds

C

C

+ Cgd, C

+ C

Ciss

Coss

gd

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

SHORTED

ds

12.0
ID= 35A

)

10.0

V

(
e

g
a

t

l

8.0

o
V

e
c

r
u

6.0

o
S

­o

t

­e

t

4.0

a
G

,

S
G

2.0

V

VDS= 80V

VDS= 50V

VDS= 20V

0.0
0 20406080100

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000.00

1000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

)
A

(

100.00

t
n
e

r

r
u

C
n

i
a

r
D
e

s

r
e
v
e

R
,

D
S

I

10.00

1.00

TJ = 175°C

TJ = 25°C

0.10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

= 0V

GS

)
A

(
t

100

n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D
,

D

I

10

1

Tc = 25°C
Tj = 175°C

100µsec

1msec

10msec

Single Pulse

0.1
1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

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