PD -95104
IRF1404SPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Seventh Generation HEXFET® Power MOSFETs from
G
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 162
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 115 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 650
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 519 mJ
Avalanche Current 95 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to +175
Storage Temperature Range -55 to +175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient (PCB mounted, steady-state)* ––– 40
HEXFET® Power MOSFET
D
V
= 40V
DSS
R
DS(on)
= 0.004Ω
ID = 162A
S
D2Pak
IRF1404SPbF
TO-262
IRF1404LPbF
IRF1404LPbF
°C
www.irf.com 1
03/11/04
IRF1404S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.00350.004 Ω VGS = 10V, ID = 95A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 40V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– 160 200 ID = 95A
Gate-to-Source Charge ––– 35 ––– nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V
Turn-On Delay Time ––– 17 ––– VDD = 20V
Rise Time ––– 140 ––– ID = 95A
Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω
ns
Fall Time ––– 26 ––– RD = 0.21Ω
Internal Source Inductance
–––
7.5
–––
Between lead,
nH
and center of die contact
Input Capacitance ––– 7360 ––– VGS = 0V
Output Capacitance ––– 1680 ––– VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
162
650
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.12mH
J
= 95A. (See Figure 12)
AS
≤ 95A, di/dt ≤ 150A/µs, V
DD
≤ V
(BR)DSS
as C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
,
Use IRF1404 data and test conditions.
oss
while V
is rising from 0 to 80% V
DS
DSS
D
G
S
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
IRF1404S/LPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
T = 25 C
J
J
°
T = 175 C
J
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
°
2.0
I =
D
159A
1.5
100
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF1404S/LPbF
12000
10000
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
C
V , Drain- to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C
iss
oss
rss
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
°
T = 175 C
J
100
20
I =
95A
D
V = 32V
DS
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
V = 20V
DS
FOR TEST CIRCUIT
0
0 40 80 120 160 200 240
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
1000
BY R
DS(on)
13
10us
100us
1ms
10ms
°
T = 25 C
J
10
SD
I , Reverse Drain Current (A)
V = 0 V
1
0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
D
I , Drain Current (A)I , Drain Current (A)
10
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
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