DS
DS(on)
D
DS(on)
DS(on)
jmax
AR
GS
j
stg
查询IPB15N03L供应商
OptiMOS Buck converter series
Feature
• N-Channel
• Logic Level
• Low On-Resistance R
• Excellent Gate Charge x R
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
product (FOM)
IPP15N03L
IPB15N03L
Product Summary
V
R
max. SMD version 12.6 mΩ
I
P- TO263 -3-2 P- TO220 -3-1
30 V
42 A
• dv/dt rated
• Ideal for fast switching buck converters
Type Package Ordering Code
IPP15N03L P- TO220 -3-1 Q67042-S4039
IPB15N03L P- TO263 -3-2 Q67040-S4344
Marking
15N03L
15N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
1)
I
D
42
A
42
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25Ω
I
D puls
E
AS
168
20 mJ
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
IS=42A, VDS=-V, di/dt=200A/µs, T
jmax
=175°C
2)
E
dv/dt
Gate source voltage V
Power dissipation
TC=25°C
P
Operating and storage temperature T
tot
, T
8
6 kV/µs
±20
83 W
-55... +175
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
V
°C
2003-01-17
IPP15N03L
thJC
IPB15N03L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area
3)
R
thJA
- 1.2 1.8 K/W
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
ID=40µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
30 - - V
1.2 1.6 2
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=21A
VGS=4.5V, ID=21A, SMD version
Drain-source on-state resistance
VGS=10V, ID=21A
VGS=10V, ID=21A, SMD version
1
Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
= 1.8K/W the chip is able to carry ID= 64A at 25°C, for detailed
thJC
I
GSS
R
DS(on)
R
DS(on)
- 1 100 nA
-
-
-
-
14.9
14.5
10.3
9.9
19.9
19.6
12.9
12.6
mΩ
Page 2
2003-01-17
IPP15N03L
iss
oss
rss
G
d(on)
r
d(off)
f
gs
gd
(plateau)
SM
SD
rr
rr
IPB15N03L
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
VDS≥2*ID*R
ID=42A
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
21 42 - S
- 850 1130 pF
- 330 330
- 90 130
- 1 - Ω
VDD=15V, VGS=10V,
ID=21A,
RG=7.8Ω
- 6.5 9.8 ns
- 20 30
- 24 36
- 14.5 21.8
VDD=15V, ID=21A - 2.7 3.6 nC
- 7.4 9.3
g
VDD=15V, ID=21A,
VGS=0 to 5V
- 12.7 15.9
Output charge Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
oss
S
VDS=15V, ID=21A,
VGS=0V
VDD=15V, ID=21A - 3.5 - V
TC=25°C - - 42 A
- 12.2 15.3 nC
- - 168
VGS=0V, IF=42A - 0.95 1.25 V
VR=-V, I
diF/dt=100A/µs
F=lS
,
- 24 31 ns
- 18 23 nC
Page 3
2003-01-17
IPP15N03L
IPB15N03L
1 Power dissipation
P
= f (TC)
tot
IPP15N03L
100
W
80
70
tot
P
60
50
40
30
20
10
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
IPP15N03L
50
A
40
35
D
I
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160°C190
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
3
IPP15N03L
10
A
2
10
D
I
DS(on)
R
1
10
D
I
/
DS
V
=
tp = 8.8µs
DC
T
C
10 µs
100 µs
1 ms
10 ms
0
0 20 40 60 80 100 120 140 160°C190
4 Max. transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
1
IPP15N03L
10
K/W
0
10
thJC
-1
Z
10
D = 0.50
10
10
-2
-3
single pulse
0.20
0.10
0.05
0.02
0.01
T
C
10
0
10
-4
10
-7
-6
-5
-4
-3
-1
10
0
10
1
V
V
DS
10
2
10
10
10
10
10
Page 4
-2
10
s
t
2003-01-17
0
10
p
IPP15N03L
IPB15N03L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
IPP15N03L
P
110
A
90
80
D
70
I
60
50
40
30
20
10
= 83W
tot
f
g
0
0 0.5 1 1.5 2 2.5 3 3.5 4
e
VGS [V]
d
c
b
a
a 3.0
b 3.5
c 4.0
d 4.5
e 5.0
f 5.5
g 6.0
V
V
DS
6 Typ. drain-source on resistance
R
DS(on)
parameter: V
5
= f (ID)
GS
IPP15N03L
65
mΩ
55
50
45
DS(on)
R
40
35
30
25
20
15
10
V
GS
b
5
3.5
0
0 10 20 30 40 50
[V] =
c
4.0
4.5
b
d
e
f
5.0
5.5
6.0
c
g
d
e
f
g
70
A
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
100
A
80
70
D
I
60
50
40
30
20
10
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
50
S
40
35
fs
g
30
25
20
15
10
5
fs
0
0 1 2 3 4
V
V
GS
6
Page 5
0
0 10 20 30 40 50 60 70 80
2003-01-17
I
A
100
D
IPP15N03L
IPB15N03L
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 21 A, VGS = 10 V
IPP15N03L
30
mΩ
24
22
20
DS(on)
R
18
16
14
12
10
8
6
4
2
0
-60 -20 20 60 100 140
98%
typ
°C
10 Typ. gate threshold voltage
V
parameter: VGS = V
200
T
j
= f (Tj)
GS(th)
DS
2.5
V
GS(th)
V
1.5
1
0.5
0
-60 -20 20 60 100
40uA
0.8mA
°C
180
T
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
V
3
10
pF
2
10
1
10
0 5 10 15 20
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
3
IPP15N03L
10
A
C
iss
C
oss
C
rss
V
30
DS
V
2
10
F
I
1
10
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
Page 6
2003-01-17
IPP15N03L
IPB15N03L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 20 A, VDD = 25 V, RGS = 25 Ω
20
mJ
16
14
AS
E
12
10
8
6
4
2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
IPP15N03L
36
V
34
33
(BR)DSS
V
32
31
30
29
28
0
25 45 65 85 105 125 145
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 21 A pulsed
IPP15N03L
16
V
12
GS
10
V
0.2 V
DS max
8
0.5 V
DS max
0.8 V
6
4
DS max
°C
T
185
j
27
-60 -20 20 60 100 140
°C
T
200
j
2
0
0 4 8 12 16 20 24 28
nC
Q
Gate
34
Page 7
2003-01-17
IPP15N03L
IPB15N03L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2003-01-17
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