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IPB80N08S2-07
Datasheet (INFINEON)
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Datasheet IPB80N08S2-07, IPP80N08S2-07, IPI80N08S2-07 Datasheet (INFINEON)

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IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
OptiMOS® Power-Transistor
Product Summary
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type Package Ordering Code Marking
IPB80N08S2-07 PG-TO263-3-2 SP0002-19048 2N0807
IPP80N08S2-07 PG-TO220-3-1 SP0002-19040 2N0807
IPI80N08S2-07 PG-TO262-3-1 SP0002-19043 2N0807
V
DS
R
DS(on),max
I
D
PG-TO220-3-1 PG-TO262-3-1PG-TO263-3-2
75 V
(SMD version) 7.1
80 A
mΩ
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
=25 °C, unless otherwise specified
j
1)
I
D
TC=25 °C, VGS=10 V
T
V
2)
2)
4)
I
D,pulse
E
AS
V
GS
P
tot
T
, T
j
TC=25 °C
ID=80A
TC=25 °C
stg
=100 °C,
C
=10 V
GS
Value
80 A
2)
80
320
810 mJ
±20 V
300 W
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.0 page 1 2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ­ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
2)
R
thJC
R
thJA
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 62
2
cooling area
6 cm
5)
- - 0.5 K/W
--62
--40
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
GS(th)
=0 V, ID= 1 mA
VDS=VGS, ID=250 µA
75 - - V
2.1 3.0 4.0
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
I
R
DSS
GSS
DS(on)
VDS=75 V, VGS=0 V, T
=25 °C
j
V
=75 V, VGS=0 V,
DS
T
=125 °C
j
2)
VGS=20 V, VDS=0 V
VGS=10 V, ID=80 A,
V
=10 V, ID=80 A,
GS
SMD version
- 0.01 1 µA
- 1 100
- 1 100 nA
- 5.8 7.4 mΩ
- 5.5 7.1
Rev. 1.0 page 2 2006-03-03
IPB80N08S2-07
y
g
IPP80N08S2-07, IPI80N08S2-07
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
2)
C
iss
V
=0 V, VDS=25 V,
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
2)
Q
gs
Q
gd
Q
g
GS
f =1 MHz
V
=40 V, VGS=10 V,
DD
I
=80 A, R
D
=60 V, ID=80 A,
V
DD
V
=0 to 10 V
GS
=2.2 Ω
G
- 4700 - pF
- 1260 -
- 580 -
-26-ns
-50-
-61-
-30-
-2537nC
- 69 116
- 144 180
Gate plateau voltage
V
plateau
- 5.4 - V
Reverse Diode
Diode continous forward current
I
S
- - 80 A
2)
TC=25 °C
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
1)
Current is limited by bondwire; with an R
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagram 13.
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
2)
I
S,pulse
V
t
rr
Q
thJC
SD
rr
VGS=0 V, IF=80 A, T
=25 °C
j
VR=40 V, IF=IS,
di
/dt =100 A/µs
F
VR=40 V, IF=IS,
di
/dt =100 A/µs
F
= 0.5K/W the chip is able to carry 132A at 25°C. For detailed
- - 320
- 0.9 1.3 V
- 110 140 ns
- 470 590 nC
Rev. 1.0 page 3 2006-03-03
1 Power dissipation 2 Drain current
P
= f(TC); V
tot
≥ 6 V ID = f(TC); V
GS
GS
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
≥ 10 V
350
100
300
80
250
[A]
D
I
60
40
200
[W]
tot
P
150
100
20
50
0
0 50 100 150 200
TC [°C]
0
0 50 100 150 200
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
= f(VDS); TC = 25 °C; D = 0 Z
D
parameter: t
p
1000
10 µs
100 µs
1 ms
[A]
D
I
100
10
1
0.1 1 10 100
[V]
V
DS
= f(tp)
thJC
parameter: D =tp/T
0
10
0.5
-1
10
0.1
thJC
10
10
0.05
-2
0.01
-3
-6
-7
10
10
[K/W]
Z
single pulse
-5
10
10
-4
tp [s]
10
-3
10
10
10
0
-1
-2
Rev. 1.0 page 4 2006-03-03
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
= f(VDS); Tj = 25 °C R
D
parameter: V
GS
parameter: V
= (ID); Tj = 25 °C
DS(on)
GS
300
250
10 V
7 V
40
35
30
200
25
[A]
D
I
150
6 V
[mW]
20
DS(on)
R
100
5.5 V
50
5 V
4.5 V
0
0246810
VDS [V]
15
10
5
0 20 40 60 80 100 120
[A]
I
D
7 Typ. transfer characteristics 8 Typ. Forward transconductance
6.5 V
10 V
I
= f(VGS); V
D
parameter: T
320
280
240
200
160
[A]
D
I
120
80
40
0
2345678
= 6V g
DS
j
175 °C
25 °C
-55 °C
VGS [V]
= f(ID); Tj = 25°C
fs
parameter: g
150
125
100
[S]
75
fs
g
50
25
0
0 50 100 150 200
fs
ID [A]
Rev. 1.0 page 5 2006-03-03
IPP80N08S2-07, IPI80N08S2-07
9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage
IPB80N08S2-07
R
= f(Tj) V
DS(ON)
GS(th)
= f(Tj); V
parameter: ID = 80 A; VGS = 10 V parameter: I
12
10
]
8
Ω
[m
DS(on)
R
6
4
2
-60 -20 20 60 100 140 180
Tj [°C]
4
3.5
3
[V]
2.5
GS(th)
V
2
1.5
1
-60 -20 20 60 100 140 180
= V
GS
DS
D
1250 µA
250 µA
Tj [°C]
11 Typ. capacitances 12 Typical forward diode characteristicis
C = f(V
); V
= 0 V; f = 1 MHz IF = f(VSD)
GS
10
DS
4
[pF]
C
3
10
2
10
0 5 10 15 20 25 30
VDS [V]
Ciss
Coss
Crss
parameter: T
3
10
2
10
[A]
F
I
1
10
0
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
j
25 °C
175 °C
VSD [V]
Rev. 1.0 page 6 2006-03-03
IPP80N08S2-07, IPI80N08S2-07
13 Typical avalanche energy 14 Typ. gate charge
E
= f(Tj) V
AS
parameter: I
= 80A parameter: V
D
GS
= f(Q
); ID = 80 A pulsed
gate
DD
IPB80N08S2-07
900
12
800
10
700
600
8
500
[V]
[mJ]
AS
400
E
300
6
GS
V
4
200
2
100
0
25 75 125 175
Tj [°C]
0
0 20 40 60 80 100 120 140 160
Q
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
gate
15V 60V
[nC]
V
BR(DSS)
= f(Tj); ID = 1 mA
90
85
80
[V]
BR(DSS)
V
75
70
65
-60 -20 20 60 100 140 180
Tj [°C]
V
V
GS
GS
Q
Q
g
g
Q
Q
gate
gate
Q
Q
Q
gs
gs
Q
gd
gd
Rev. 1.0 page 7 2006-03-03
IPB80N08S2-07
©
IPP80N08S2-07, IPI80N08S2-07
Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2006-03-03
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