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IPB08CN10N G
Datasheet (INFINEON)
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Datasheet IPB08CN10N G, IPI08CN10N G, IPP08CN10N G Datasheet (INFINEON)

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IPB08CN10N G
IPI08CN10N G IPP08CN10N G
OptiMOS®2 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
product (FOM)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB08CN10N G IPI08CN10N G IPP08CN10N G
V
R
I
DS
DS(on),max (TO263)
D
100 V
8.2
95 A
mΩ
Package
Marking
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
PG-TO263-3 PG-TO262-3 PG-TO220-3
08CN10N 08CN10N 08CN10N
=25 °C, unless otherwise specified
j
I
D
2)
I
D,pulse
E
AS
TC=25 °C
T
=100 °C
C
TC=25 °C
ID=95 A, R
=95 A, VDS=80 V,
I
D
=25 Ω
GS
di /dt =100 A/µs,
T
=175 °C
j,max
3)
V
GS
P
tot
T
, T
j
TC=25 °C
stg
Value
95 A
68
380
262 mJ
6 kV/µs
±20 V
167 W
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.02 page 1 2006-06-02
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction 4) ­ambient (TO220, TO262, TO263)
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm2 cooling area
5)
- - 0.9 K/W
--40
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=130 µA
VDS=100 V, VGS=0 V, T
=25 °C
j
100 - - V
234
- 0.1 1 µA
V
=100 V, VGS=0 V,
DS
T
=125 °C
j
Gate-source leakage current
Drain-source on-state resistance
I
R
GSS
VGS=20 V, VDS=0 V
VGS=10 V, ID=95 A,
(TO263)
V
=10 V, ID=95 A,
GS
(TO220, TO262)
Gate resistance
Transconductance
1)
J-STD20 and JESD22
2)
See figure 3
3)
T
=150 °C and duty cycle D=0.01 for Vgs<-5V
jmax
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
R
G
g
fs
|VDS|>2|ID|R
I
=95 A
D
DS(on)max
,
- 10 100
- 1 100 nA
- 6.1 8.2
- 6.4 8.5
- 1.5 -
57 113 - S
mΩ
Ω
Rev. 1.02 page 2 2006-06-02
IPB08CN10N G
y
g
IPI08CN10N G IPP08CN10N G
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
C
iss
=0 V, VDS=50 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5)
Q
gs
Q
gd
Q
sw
Q
g
GS
f =1 MHz
V
=50 V, VGS=10 V,
DD
I
=47.5 A, R
D
V
=50 V, ID=95 A,
DD
V
=0 to 10 V
GS
=1.6 Ω
G
- 5010 6660 pF
- 757 1010
-4365
-1523ns
-2436
-2639
-610
-2736nC
-1827
-3044
- 75 100
Gate plateau voltage
Output charge
V
Q
plateau
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
t
rr
Q
rr
VDD=50 V, VGS=0 V
=25 °C
T
C
VGS=0 V, IF=95 A, T
=25 °C
j
VR=50 V, IF=IS,
di
/dt =100 A/µs
F
- 5.5 - V
- 80 106 nC
- - 95 A
- - 380
- 1 1.2 V
- 105 ns
- 270 - nC
Rev. 1.02 page 3 2006-06-02
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
200
160
120
[W]
tot
P
80
40
0
0 50 100 150 200
TC [°C]
100
80
60
[A]
D
I
40
20
0
0 50 100 150 200
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
10
[A]
10
D
I
10
10
p
3
1 µs
10
100 µs
10 ms
1
10 µs
1 ms
10
2
2
DC
1
0
-1
10
-1
10
0
VDS [V]
=f(tp)
thJC
parameter: D =tp/T
10
-1
[K/W]
10
thJC
Z
-2
10
10
3
0
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
10
10
-4
-5
10
-3
10
-2
10
-1
10
0
tp [s]
Rev. 1.02 page 4 2006-06-02
IPI08CN10N G IPP08CN10N G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
parameter: V
=f(ID); Tj=25 °C
GS
IPB08CN10N G
350
300
10 V
8 V
7 V
20
4.5 V
5 V
5.5 V
15
250
6.5 V
200
[A]
D
I
150
100
50
6 V
5.5 V
5 V
4.5 V
0
012345
VDS [V]
]
Ω
[m
10
DS(on)
R
5
0
0 50 100 150
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
6 V
10 V
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
200
150
100
[A]
D
I
50
0
02468
DS(on)max
VGS [V]
175 °C
25 °C
gfs=f(ID); Tj=25 °C
160
140
120
100
[S]
80
fs
g
60
40
20
0
0 40 80 120 160
ID [A]
Rev. 1.02 page 5 2006-06-02
IPI08CN10N G IPP08CN10N G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
IPB08CN10N G
R
=f(Tj); ID=95 A; VGS=10 V V
20
15
]
Ω
[m
DS(on)
R
10
98 %
typ
5
0
-60 -20 20 60 100 140 180
Tj [°C]
=f(Tj); VGS=V
GS(th)
parameter: I
4
3.5
3
2.5
[V]
2
GS(th)
V
1.5
1
0.5
0
-60 -20 20 60 100 140 180
DS
D
1300 µA
130 µA
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
4
10
Ciss
Coss
3
10
[pF]
C
2
10
1
10
0 20406080
Crss
VDS [V]
parameter: T
3
10
2
10
[A]
F
I
1
10
0
10
0 0.5 1 1.5 2
j
175 °C
25 °C
25 °C, 98%
175 °C, 98%
VSD [V]
Rev. 1.02 page 6 2006-06-02
IPI08CN10N G IPP08CN10N G
13 Avalanche characteristics 14 Typ. gate charge
IPB08CN10N G
=f(tAV); R
I
AS
parameter: T
100
[A]
10
AS
I
1
1 10 100 1000
=25 Ω
GS
j(start)
150 °C
tAV [µs]
100 °C
25 °C
=f(Q
V
GS
gate
parameter: V
12
10
8
[V]
6
GS
V
4
2
0
0 20406080
); ID=95 A pulsed
DD
Q
gate
50 V
20 V
80 V
[nC]
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
115
110
105
[V]
BR(DSS)
V
100
95
90
-60 -20 20 60 100 140 180
Tj [°C]
Q
V
V
gs(th)
g(th)
GS
Q
Q
gs
g
Q
sw
Q
gd
Q
gate
Rev. 1.02 page 7 2006-06-02
PG-TO220-3: Outline
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
Rev. 1.02 page 8 2006-06-02
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
Rev. 1.02 page 9 2006-06-02
PG-TO-263 (D²-Pak)
IPB08CN10N G
IPI08CN10N G IPP08CN10N G
Rev. 1.02 page 10 2006-06-02
IPB08CN10N G
A
A
IPI08CN10N G IPP08CN10N G
Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006.
ll Rights Reserved.
ttention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ).
Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.02 page 11 2006-06-02
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