INFINEON IKW30N60T User Manual
IKW30N60T
TrenchStop
®
Series q
Low Loss DuoPack : IGBT in TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low V
1.5 V (typ.)
CE(sat)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterruptible Power Supply
• TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
• Positive temperature coefficient in V
CE(sat)
CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
I
CE
V
C
CE(sat),Tj=25°C
T
Marking Package
j,max
PG-TO-247-3-21
C
G
E
IKW30N60T 600V 30A 1.5V
175°C
K30T60 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current, limited by T
T
= 25°C
C
= 100°C
T
C
jmax
Pulsed collector current, tp limited by T
Turn off safe operating area (V
Diode forward current, limited by T
T
= 25°C
C
= 100°C
T
C
Diode pulsed current, tp limited by T
≤ 600V, Tj ≤ 175°C)
CE
jmax
jmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
I
jmax
I
V
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
600 V
60
A
30
90
90
60
30
90
±20
5
V
µs
187 W
-40...+175
-55...+175
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.3 Nov 06
IKW30N60T
TrenchStop
®
Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
R
thJC
thJCD
0.80
K/W
1.05
junction – case
Thermal resistance,
thJA
40
R
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=30A
CE(sat)
VGE=0V, IF=30A
F
IC=0.43mA,
GE(th)
VCE=600V,
VCE=0V,VGE=20V
VCE=20V, IC=30A
Gint
=0V, IC=0.2mA
T
=25°C
j
T
=175°C
j
T
=25°C
j
=175°C
T
j
V
CE=VGE
VGE=0V
=25°C
T
j
T
=175°C
j
600 - -
-
-
-
-
1.5
1.9
1.65
1.6
2.05
2.05
V
-
-
4.1 4.9 5.7
µA
-
-
-
-
40
1000
- - 100 nA
- 16.7 - S
-
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
iss
C
oss
C
rss
VCC=480V, IC=30A
Q
Gate
L
E
=25V,
V
CE
V
=0V,
GE
f=1MHz
- 1630 -
pF
- 108 -
- 50 -
- 167 - nC
V
=15V
GE
- 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
I
C(SC)
=15V,tSC≤5 µs
V
GE
= 400V,
V
CC
T
= 150°C
j
- 275 - A
Power Semiconductors
2 Rev. 2.3 Nov 06
IKW30N60T
TrenchStop
®
Series q
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
min. Typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=30A,
CC
=0/15V,
V
GE
=10.6 Ω,
R
G
1)
L
=136nH,
σ
1)
C
=39pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 23 -
- 21 -
- 254 -
- 46 -
- 0.69 -
- 0.77 -
- 1.46 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=25°C,
j
=400V, IF=30A,
V
R
di
/dt=910A/µs
F
- 143 - ns
- 0.92 - µC
- 16.3 - A
- 603 -
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. Typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=175°C,
j
V
=400V,IC=30A,
CC
V
=0/15V,
GE
= 10.6 Ω
R
G
1)
L
=136nH,
σ
1)
C
=39pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 24 -
- 26 -
- 292 -
- 90 -
- 1.0 -
- 1.1 -
- 2.1 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=175°C
j
V
=400V, IF=30A,
R
/dt=910A/µs
di
F
- 225 - ns
- 2.39 - µC
- 22.3 - A
- 310 -
Value
Unit
ns
mJ
A/µs
Unit
ns
mJ
A/µs
1)
Leakage inductance L
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
Power Semiconductors
3 Rev. 2.3 Nov 06
IKW30N60T
90A
80A
70A
60A
50A
40A
30A
, COLLECTOR CURRENT
C
20A
I
10A
0A
100Hz 1kHz 10kHz 100kHz
Figure 1. Collector current as a function of
TC=80°C
TC=110°C
I
c
I
c
f, SWITCHING FREQUENCY
switching frequency
(T
≤ 175°C, D = 0.5, VCE = 400V,
j
= 0/+15V, RG = 10Ω)
V
GE
TrenchStop
10A
1A
, COLLECTOR CURRENT
C
I
0.1A
1V 10V 100V 1000V
Figure 2. Safe operating area
®
Series q
tp=2µs
10µs
50µs
1ms
DC
10ms
VCE, COLLECTOR-EMITTER VOLTAGE
(D = 0, T
V
GE
= 25°C, Tj ≤175°C;
C
=15V)
160W
120W
80W
, POWER DISSIPATION
tot
P
40W
0W
25°C 50°C 75°C 100°C 125°C 150°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
50A
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
Figure 4. Collector current as a function of
case temperature
≤ 175°C)
(T
j
25°C 75°C 125°C
TC, CASE TEMPERATURE
case temperature
≥ 15V, Tj ≤ 175°C)
(V
GE
Power Semiconductors
4 Rev. 2.3 Nov 06
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