INFINEON IKW15T120 Datasheet
IKW15T120
TrenchStop®Series
Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Approx. 1.0Vreduced V
and 0.5V reduced VFcompared to BUP313D
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop®and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
CE(sat)
G
PG-TO-247-3
CE(sat)
C
E
Type V
CE
IKW15T120 1200V 15A 1.7V
I
V
C
CE(sat),Tj=25°CTj,max
150C
Marking Code Package
K15T120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current
TC= 25C
TC= 100C
Pulsed collector current, tplimited by T
Turn off safe operating area
jmax
V
CE
I
C
I
Cpul s
-
1200 V
A
30
15
45
45
VCE 1200V, Tj 150C
Diode forward current
TC= 25C
TC= 100C
Diode pulsed current, tplimited by T
Gate-emitter voltage
Short circuit withstand time
2)
jmax
I
F
I
Fpul s
V
GE
t
SC
30
15
45
20
10
V
s
VGE= 15V, VCC 1200V, Tj 150C
Power dissipation
P
tot
110 W
TC= 25C
Operating junction temperature
Storage temperature
T
j
T
stg
-40...+150
-55...+150
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1 Rev. 2.4 12.06.2013
IKW15T120
TrenchStop®Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj= 25 C, unless otherwise specified
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
R
thJ C
R
thJ CD
R
thJ A
V
(BR )CESVGE
V
CE( sat)
V
F
V
GE( th)
I
CES
I
GES
g
fs
R
Gin t
=0V, IC=0.5mA
VGE= 15V, IC=15A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=15A
Tj=25C
Tj=125C
Tj=150C
IC=0.6mA,VCE=V
GE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=15A
1.1 K/W
1.5
40
Value
min. typ. max.
1200 - - V
-
-
-
-
-
-
1.7
2.0
2.2
1.7
1.7
1.7
2.2
-
-
2.2
-
-
5.0 5.8 6.5
-
-
-
-
0.2
2.0
- - 100 nA
- 10 - S
none Ω
Unit
mA
IFAG IPC TD VLS
2 Rev. 2.4 12.06.2013
TrenchStop®Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gat e
E
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(S C)
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(o n)
t
r
t
d(o ff)
t
f
E
on
E
off
E
ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
rr
Q
rr
I
rrm
dirr/dt
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
VGE=15V,tSC 10s
VCC= 600V,
Tj= 25 C
Tj=25C,
VCC=600V,IC=15A,
VGE=0/15V,
RG=56,
2)
L
=180nH,
2)
C
=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=15A,
diF/dt=600A/ s
IKW15T120
- 1100 - pF
- 100 -
- 50 -
- 85 - nC
- 13 - nH
- 90 - A
Value
min. typ. max.
- 50 - ns
- 30 -
- 520 -
- 60 -
- 1.3 - mJ
- 1.4 -
- 2.7 -
- 140 - ns
- 1.9 - µC
- 17 - A
- 230 -
Unit
A/s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance Land Stray capacity Cdue to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3 Rev. 2.4 12.06.2013
TrenchStop®Series
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
d(o n)
t
r
t
d(o ff)
t
f
E
on
E
off
E
ts
t
rr
Q
rr
I
rrm
dirr/dt
Tj=150C,
VCC=600V,IC=15A,
VGE=0/15V,
RG= 56
1)
L
=180nH,
1)
C
=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=15A,
diF/dt=600A/ s
IKW15T120
Value
min. typ. max.
- 50 - ns
- 35 -
- 600 -
- 120 -
- 2.0 - mJ
- 2.1 -
- 4.1 -
- 330 - ns
- 3.4 - µC
- 21 - A
- 190 -
Unit
A/s
1)
Leakage inductance Land Stray capacity Cdue to dynamic test circuit in Figure E.
IFAG IPC TD VLS
4 Rev. 2.4 12.06.2013
TrenchStop®Series
Figure 1.
Collector current as a function of
Figure 2.
Safe operating area
Figure 3.
Power dissipation
as a function of
Figure 4.
Collector current as a function of
I
c
I
c
IKW15T120
tp=2µs
TC=80°C
TC=110°C
, COLLECTOR CURRENT
C
I
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
switching frequency
(Tj 150C, D = 0.5, VCE= 600V,
VGE= 0/+15V, RG= 56)
10A
1A
, COLLECTOR CURRENT
C
I
0,1A
1V 10V 100V 1000V
(D = 0, TC= 25C,
Tj150C;VGE=15V)
DC
10µs
50µs
150µs
500µs
20ms
80W
60W
40W
, POWER DISSIPATION
tot
P
20W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
case temperature
(Tj 150C)
IFAG IPC TD VLS
20A
10A
, COLLECTOR CURRENT
C
I
0A
25°C 75°C 125°C
case temperature
(VGE 15V, Tj 150C)
5 Rev. 2.4 12.06.2013
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