INFINEON IKW08T120 User Manual

IKW08T120

TrenchStop

®

Series

Low Loss DuoPack : IGBT in TrenchStop

with soft, fast recovery anti-parallel EmCon HE diode

• Approx. 1.0V reduced V

and 0.5V reduced V

• Short circuit withstand time – 10µs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• TrenchStop

®

and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V

• Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel EmCon HE diode

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

IC V

V

CE

CE(sat)

compared to BUP305D

F

CE(sat)

1

for target applications

CE(sat),Tj=25°C

T

®

and Fieldstop technology

Marking Code Package

j,max

C

G

E

PG-TO-247-3-21

IKW08T120 1200V 8A 1.7V

150°C

K08T120 PG-TO-247-3-21

Maximum Ratings

Parameter Symbol Value Unit

V

Collector-emitter voltage

DC collector current

= 25°C

T

C

= 100°C

T

C

Pulsed collector current, tp limited by T

Turn off safe operating area

V

≤ 1200V, Tj ≤ 150°C

CE

Diode forward current

= 25°C

T

C

= 100°C

T

C

Diode pulsed current, tp limited by T

jmax

Gate-emitter voltage

Short circuit withstand time2)

VGE = 15V, V

≤ 1200V, Tj ≤ 150°C

CC

Power dissipation

= 25°C

T

C

Operating junction temperature

Storage temperature

I

jmax

I

CE

I

C

Cpuls

-

I

F

Fpuls

V

GE

t

SC

P

tot

T

j

T

stg

1200 V

16

8

A

24

16

8

24

±20

10

V µs

70 W

-40...+150

°C

-55...+150

1

J-STD-020 and JESD-022

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1 Rev. 2.2 Dec 07

IKW08T120

TrenchStop

®

Series

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

Power Semiconductors

2 Rev. 2.2 Dec 07

IKW08T120

TrenchStop

®

Series

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

R

thJC

thJCD

1.7

K/W

2.3

R

junction – case

Thermal resistance,

thJA

40

R

junction – ambient

Electrical Characteristic, at T

Parameter Symbol Conditions

= 25 °C, unless otherwise specified

j

Value

Unit

min. typ. max.

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V

(BR)CESVGE

V

I

CES

I

GES

g

R

fs

VGE = 15V, IC=8A

CE(sat)

VGE=0V, IF=8A

F

IC=0.3mA,VCE=V

GE(th)

VCE=1200V,

VCE=0V,VGE=20V

VCE=20V, IC=8A

Gint

=0V, IC=0.5mA

T

=25°C

j

T

=125°C

j

T

=150°C

j

T

=25°C

j

T

=125°C

j

=150°C

T

j

VGE=0V

=25°C

T

j

T

=150°C

j

1200 - -

GE

-

5.0 5.8 6.5

-

1.7

2.0

2.2

1.7

-

- - 100 nA

- 5 - S

none 

2.2

-

2.2

-

0.2

2.0

V

mA

Power Semiconductors

3 Rev. 2.2 Dec 07

IKW08T120

TrenchStop

®

Series

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Internal emitter inductance

C

Q

L

iss

oss

rss

Gate

E

V

=25V,

CE

=0V,

V

GE

f=1MHz

VCC=960V, IC=8A

=15V

V

GE

- 600 -

- 36 -

- 28 -

- 53 - nC

pF

- 13 - nH

measured 5mm (0.197 in.) from case

Short circuit collector current1)

I

C(SC)

=15V,tSC≤10µs

V

GE

V

= 600V,

CC

T

= 25°C

j

- 48 - A

Switching Characteristic, Inductive Load, at T

Parameter Symbol Conditions

=25 °C

j

Value

Unit

min. typ. max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

T

=25°C,

j

V

=600V,IC=8A,

CC

=0/15V,

V

GE

=81Ω,

R

G

2)

L

=180nH,

σ

2)

C

=39pF

σ

Energy losses include “tail” and diode reverse recovery.

- 40 -

- 23 -

- 450 -

- 70 -

- 0.67 -

- 0.7 -

- 1.37 -

ns

mJ

t

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse recovery current during t

b

t

Q

I

di

rr

rrm

rr

/dt

T

=25°C,

j

=600V, IF=8A,

V

R

/dt=600A/µs

di

F

- 80 - ns

- 1.0 - µC

- 13 - A

- 420 -

A/µs

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2)

Leakage inductance L

Power Semiconductors

an d Stray capacity Cσ due to dynamic test circuit in Figure E.

σ

4 Rev. 2.2 Dec 07

IKW08T120

TrenchStop

®

Series

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter Symbol Conditions

Value

Unit

min. typ. max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

T

=150°C,

j

=600V, IC=8A,

V

CC

V

=0/15V,

GE

= 81Ω,

R

G

1)

L

=180nH,

σ

1)

C

=39pF

σ

Energy losses include “tail” and diode reverse recovery.

- 40 -

ns

- 26 -

- 570 -

- 140 -

- 1.08 -

mJ

- 1.2 -

- 2.28 -

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse recovery current during t

b

t

Q

I

di

rr

rrm

rr

/dt

T

=150°C

j

=600V, IF=8A,

V

R

di

/dt=600A/µs

F

- 200 - ns

- 2.3 - µC

- 20 - A

- 320 -

A/µs

1)

Leakage inductance L

an d Stray capacity Cσ due to dynamic test circuit in Figure E.

σ

Power Semiconductors

5 Rev. 2.2 Dec 07