INFINEON IKW08T120 User Manual
IKW08T120
TrenchStop
®
Series
Low Loss DuoPack : IGBT in TrenchStop
with soft, fast recovery anti-parallel EmCon HE diode
• Approx. 1.0V reduced V
and 0.5V reduced V
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop
®
and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IC V
V
CE
CE(sat)
compared to BUP305D
F
CE(sat)
1
for target applications
CE(sat),Tj=25°C
T
®
and Fieldstop technology
Marking Code Package
j,max
C
G
E
PG-TO-247-3-21
IKW08T120 1200V 8A 1.7V
150°C
K08T120 PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage
DC collector current
= 25°C
T
C
= 100°C
T
C
Pulsed collector current, tp limited by T
Turn off safe operating area
V
≤ 1200V, Tj ≤ 150°C
CE
Diode forward current
= 25°C
T
C
= 100°C
T
C
Diode pulsed current, tp limited by T
jmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 1200V, Tj ≤ 150°C
CC
Power dissipation
= 25°C
T
C
Operating junction temperature
Storage temperature
I
jmax
I
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
1200 V
16
8
A
24
24
16
8
24
±20
10
V
µs
70 W
-40...+150
°C
-55...+150
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.2 Dec 07
IKW08T120
TrenchStop
®
Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Power Semiconductors
2 Rev. 2.2 Dec 07
IKW08T120
TrenchStop
®
Series
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
thJC
thJCD
1.7
K/W
2.3
R
junction – case
Thermal resistance,
thJA
40
R
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=8A
CE(sat)
VGE=0V, IF=8A
F
IC=0.3mA,VCE=V
GE(th)
VCE=1200V,
VCE=0V,VGE=20V
VCE=20V, IC=8A
Gint
=0V, IC=0.5mA
T
=25°C
j
T
=125°C
j
T
=150°C
j
T
=25°C
j
T
=125°C
j
=150°C
T
j
VGE=0V
=25°C
T
j
T
=150°C
j
1200 - -
GE
-
-
-
-
-
-
5.0 5.8 6.5
-
-
1.7
2.0
2.2
1.7
1.7
1.7
-
-
- - 100 nA
- 5 - S
none
2.2
-
-
2.2
-
-
0.2
2.0
V
mA
Power Semiconductors
3 Rev. 2.2 Dec 07
IKW08T120
TrenchStop
®
Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
V
=25V,
CE
=0V,
V
GE
f=1MHz
VCC=960V, IC=8A
=15V
V
GE
- 600 -
- 36 -
- 28 -
- 53 - nC
pF
- 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
I
C(SC)
=15V,tSC≤10µs
V
GE
V
= 600V,
CC
T
= 25°C
j
- 48 - A
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=600V,IC=8A,
CC
=0/15V,
V
GE
=81Ω,
R
G
2)
L
=180nH,
σ
2)
C
=39pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 40 -
- 23 -
- 450 -
- 70 -
- 0.67 -
- 0.7 -
- 1.37 -
ns
mJ
t
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=25°C,
j
=600V, IF=8A,
V
R
/dt=600A/µs
di
F
- 80 - ns
- 1.0 - µC
- 13 - A
- 420 -
A/µs
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L
Power Semiconductors
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
4 Rev. 2.2 Dec 07
IKW08T120
TrenchStop
®
Series
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C,
j
=600V, IC=8A,
V
CC
V
=0/15V,
GE
= 81Ω,
R
G
1)
L
=180nH,
σ
1)
C
=39pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 40 -
ns
- 26 -
- 570 -
- 140 -
- 1.08 -
mJ
- 1.2 -
- 2.28 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=150°C
j
=600V, IF=8A,
V
R
di
/dt=600A/µs
F
- 200 - ns
- 2.3 - µC
- 20 - A
- 320 -
A/µs
1)
Leakage inductance L
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
Power Semiconductors
5 Rev. 2.2 Dec 07
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