IKP10N60T
TrenchStop
®
Series p
Low Loss DuoPack : IGBT in TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low V
1.5 V (typ.)
CE(sat)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
• TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
IC V
CE
CE(sat),Tj=25°C
T
Marking Code Package
j,max
C
G
E
PG-TO-220-3-1
IKP10N60T 600V 10A 1.5V
175°C
K10T60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current, limited by T
= 25°C
T
C
= 100°C
T
C
jmax
Pulsed collector current, tp limited by T
Turn off safe operating area V
Diode forward current, limited by T
= 25°C
T
C
= 100°C
T
C
Diode pulsed current, tp limited by T
≤ 600V, Tj ≤ 175°C
CE
jmax
jmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature,
I
jmax
I
V
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
600 V
20
10
A
30
30
20
10
30
±20
5
V
µs
110 W
-40...+175
-55...+175
°C
260
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.3 Sep. 07
IKP10N60T
TrenchStop
®
Series p
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
thJC
thJCD
1.35
K/W
1.9
R
junction – case
Thermal resistance,
thJA
62
R
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=10A
CE(sat)
VGE=0V, IF=10A
F
IC=0.3mA,VCE=V
GE(th)
VCE=600V,
VCE=0V,VGE=20V
VCE=20V, IC=10A
Gint
=0V, IC=0.2mA
T
=25°C
j
T
=175°C
j
T
=25°C
j
=175°C
T
j
VGE=0V
=25°C
T
j
=175°C
T
j
600 - -
GE
-
-
-
-
4.1 4.6 5.7
-
-
1.5
1.8
1.6
1.6
-
-
- - 100 nA
- 6 - S
none
2.05
-
2.0
-
40
1000
V
µA
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
C
C
Q
iss
oss
rss
Gate
V
=25V,
CE
V
=0V,
GE
f=1MHz
VCC=480V,
=Fehler!
I
C
- 551 -
pF
- 40 -
- 17 -
- 62 - nC
Verweisquelle
konnte nicht
gefunden
werden.A
V
=15V
GE
Power Semiconductors
2 Rev. 2.3 Sep. 07
IKP10N60T
TrenchStop
®
Series p
Internal emitter inductance
E
- 7 - nH
L
measured 5mm (0.197 in.) from case
Short circuit collector current1)
I
C(SC)
=15V,tSC≤5 µs
V
GE
= 400V,
V
CC
T
= 25°C
j
- 100 - A
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
=400V,IC=10A,
V
CC
V
=0/15V,
GE
=23Ω,
R
G
2)
L
=60nH,
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 12 -
- 8 -
- 215 -
- 38 -
- 0.16 -
- 0.27 -
- 0.43 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=25°C,
j
=400V, IF=10A,
V
R
di
/dt=880A/µs
F
- 115 - ns
- 0.38 - µC
- 10 - A
- 680 -
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=175°C,
j
V
=400V,IC=10A,
CC
V
=0/15V,
GE
= 23Ω
R
G
1)
L
=60nH,
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 10 -
- 11 -
- 233 -
- 63 -
- 0.26 -
- 0.35 -
- 0.61 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L
1)
Leakage inductance L
b
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=175°C
j
V
=400V, IF=10A,
R
di
/dt=880A/µs
F
- 200 - ns
- 0.92 - µC
- 13 - A
- 390 -
Value
Unit
ns
mJ
A/µs
Unit
ns
mJ
A/µs
Power Semiconductors
3 Rev. 2.3 Sep. 07
IKP10N60T
30A
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
≤ 175°C, D = 0.5, VCE = 400V,
(T
j
V
GE
TC=80°C
TC=110°C
I
c
I
c
= 0/+15V, RG = 23Ω)
TrenchStop
10A
1A
, COLLECTOR CURRENT
C
I
0,1A
1V 10V 100V 1000V
Figure 2. Safe operating area
®
Series p
tp=1µs
5µs
20µs
100µs
500µs
10ms
DC
VCE, COLLECTOR-EMITTER VOLTAGE
(D = 0, T
V
GE
= 25°C, Tj ≤175°C;
C
=15V)
120W
100W
80W
60W
40W
, POWER DISSIPATION
tot
P
20W
0W
25°C 50°C 75°C 100°C 125°C 150°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
30A
20A
10A
, COLLECTOR CURRENT
C
I
0A
Figure 4. Collector current as a function of
case temperature
≤ 175°C)
(T
j
25°C 75°C 125°C
TC, CASE TEMPERATURE
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
4 Rev. 2.3 Sep. 07
IKP10N60T
30A
25A
VGE=20V
15V
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
Figure 5. Typical output characteristic
12V
10V
8V
6V
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
(T
= 25°C)
j
TrenchStop
30A
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
Figure 6. Typical output characteristic
®
Series p
VGE=20V
15V
12V
10V
8V
6V
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
(Tj = 175°C)
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
0V 2V 4V 6V 8V 10V
TJ=175°C
25°C
, GATE-EMITTER VOLTAGE
V
GE
Figure 7. Typical transfer characteristic
=20V)
(V
CE
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
COLLECTOR-EMITT SATURATION VOLTAGE
CE(sat),
0,0V
V
Figure 8. Typical collector-emitter
IC=20A
IC=10A
IC=5A
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
saturation voltage as a function of
junction temperature
(V
= 15V)
GE
Power Semiconductors
5 Rev. 2.3 Sep. 07
IKP10N60T
100ns
t
10ns
t, SWITCHING TIMES
1ns
Figure 9. Typical switching times as a
d(on)
t
r
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
function of collector current
(inductive load, T
V
= 400V, V
CE
=175°C,
J
= 0/15V, RG = 23,
GE
Dynamic test circuit in Figure E)
TrenchStop
t
d(off)
t
f
®
Series p
100ns
t
d(on)
10ns
t, SWITCHING TIMES
1ns
t
r
10Ω 20Ω 30Ω 40Ω 50Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
= 400V, V
CE
= 175°C,
J
= 0/15V, IC = 10A,
GE
Dynamic test circuit in Figure E)
t
d(off)
t
f
7V
t
100ns
t
d(on)
10ns
t, SWITCHING TIMES
t
r
1ns
25°C 50°C 75°C 100°C 125°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 11. Typical switching times as a
d(off)
t
f
6V
5V
4V
3V
2V
GATE-EMITT TRSHOLD VOLTAGE
1V
GE(th),
V
0V
-50°C 0°C 50°C 100°C 150°C
Figure 12. Gate-emitter threshold voltage as
function of junction temperature
(inductive load, V
V
= 0/15V, IC = 10A, RG=23,
GE
= 400V,
CE
Dynamic test circuit in Figure E)
typ.
max.
min.
TJ, JUNCTION TEMPERATURE
a function of junction temperature
(I
= 0.3mA)
C
Power Semiconductors
6 Rev. 2.3 Sep. 07
IKP10N60T
*) Eon and Etsinclude losses
1,0mJ
0,8mJ
0,6mJ
0,4mJ
E, SWITCHING ENERGY LOSSES
0,2mJ
0,0mJ
Figure 13. Typical switching energy losses
due to diode recovery
0A 5A 10A 15A
IC, COLLECTOR CURRENT
as a function of collector current
(inductive load, T
V
= 400V, V
CE
= 175°C,
J
= 0/15V, RG = 23,
GE
Dynamic test circuit in Figure E)
TrenchStop
Ets*
E
off
Eon*
0,8 mJ
0,6 mJ
0,4 mJ
0,2 mJ
E, SWITCHING ENERGY LOSSES
0,0 mJ
Figure 14. Typical switching energy losses
®
Series p
*) Eon and Ets include losses
due to diode recovery
10Ω 20Ω 30Ω 40Ω 50Ω
Ets*
E
off
Eon*
RG, GATE RESISTOR
as a function of gate resistor
(inductive load, T
V
= 400V, V
CE
Dynamic test circuit in Figure E)
= 175°C,
J
= 0/15V, IC = 10A,
GE
*) Eon and Ets include losses
0,6mJ
0,5mJ
0,4mJ
0,3mJ
0,2mJ
E, SWITCHING ENERGY LOSSES
0,1mJ
0,0mJ
Figure 15. Typical switching energy losses
due to diode recovery
Ets*
E
off
Eon*
50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
0,8mJ
0,6mJ
0,4mJ
0,2mJ
E, SWITCHING ENERGY LOSSES
0,0mJ
Figure 16. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
= 0/15V, IC = 10A, RG = 23,
V
GE
= 400V,
CE
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
Ets*
E
off
Eon*
300V 350V 400V 450V 500V 550V
VCE, COLLECTOR-EMITTER VOLTAGE
as a function of collector emitter
voltage
(inductive load, T
= 0/15V, IC = 10A, RG = 23,
V
GE
Dynamic test circuit in Figure E)
= 175°C,
J
Power Semiconductors
7 Rev. 2.3 Sep. 07
(
)
IKP10N60T
15V
120V
10V
, GATE-EMITTER VOLTAGE
GE
5V
V
0V
0nC 20nC 40nC 60nC
Figure 17. Typical gate charge
QGE, GATE CHARGE
(I
=10 A)
C
480V
TrenchStop
1nF
100pF
c, CAPACITANCE
10pF
Figure 18. Typical capacitance as a function
®
Series p
C
iss
C
oss
C
rss
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
of collector-emitter voltage
(V
=0V, f = 1 MHz)
GE
12µs
150A
10µs
125A
8µs
100A
6µs
75A
4µs
50A
2µs
, short circuit COLLECTOR CURRENT
25A
sc
C
I
0A
12V 14V 16V 18V
, GATE-EMITTETR VOLTAGE
V
GE
Figure 19. Typical short circuit collector
, SHORT CIRCUIT WITHSTAND TIME
SC
t
0µs
Figure 20. Short circuit withstand time as a
current as a function of gateemitter voltage
(V
≤ 400V, Tj ≤ 150°C)
CE
10V 11V 12V 13V 14V
VGE, GATE-EMITETR VOLTAGE
function of gate-emitter voltage
(V
=600V, start at TJ=25°C,
CE
T
<150°C)
Jmax
Power Semiconductors
8 Rev. 2.3 Sep. 07
τ
τ
/
6
τ
τ
/
IKP10N60T
0
10
K/W
D=0.5
R ,(K/W)
0.2911 6.53*10-2
0.4092 8.33*10
0.5008 7.37*10-4
0.1529 7.63*10
R
1
10
-1
K/W
0.2
0.1
0.05
0.02
0.01
C1=
1/R1
single pulse
, TRANSIENT THERMAL RESISTANCE
thJC
Z
-2
10
K/W
10µs 100µs 1ms 10ms 100ms
, PULSE WIDTH
t
P
Figure 21. IGBT transient thermal resistance
(D = t
/ T)
p
τ
C2=
TrenchStop
, (s)
-3
-5
R
2
R
2
2
®
Series p
D=0.5
0
10
K/W
10
-1
K/W
0.2
0.1
0.05
R ,(K/W)
0.3169 4.629*10-2
0.4734 7.07*10
0.6662 1.068*10-3
0.4398 1.253*10
R
1
0.02
C1=
, TRANSIENT THERMAL RESISTANCE
thJC
Z
10
-2
K/W
0.01
single pulse
1µs10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=t
/T)
P
1/R1
C2=
τ
, (s)
2
-3
-4
R
2
R
2
300ns
250ns
200ns
TJ=175°C
150ns
100ns
, REVERSE RECOVERY TIME
rr
t
TJ=25°C
50ns
0ns
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
0,8µC
0,7µC
0,6µC
0,5µC
0,4µC
0,3µC
0,2µC
, REVERSE RECOVERY CHARGE
rr
Q
0,1µC
0,0µC
Figure 24. Typical reverse recovery charge
a function of diode current slope
(V
=400V, IF=10A,
R
Dynamic test circuit in Figure E)
TJ=175°C
TJ=25°C
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
as a function of diode current
slope
(V
= 400V, IF = 10A,
R
Dynamic test circuit in Figure E)
Power Semiconductors
9 Rev. 2.3 Sep. 07
i
IKP10N60T
14A
12A
10A
8A
6A
4A
, REVERSE RECOVERY CURRENT
rr
I
2A
0A
200A/µs 400A/µs 600A/µs 800A/µs
/dt, DIODE CURRENT SLOPE
di
F
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V
= 400V, IF = 10A,
R
Dynamic test circuit in Figure E)
TJ=175°C
TJ=25°C
TrenchStop
-700A/µs
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
/dt, DIODE PEAK RATE OF FALL
rr
-100A/µs
d
OF REVERSE RECOVERY CURRENT
0A/µs
Figure 26. Typical diode peak rate of fall of
®
Series p
TJ=25°C
TJ=175°C
400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
reverse recovery current as a
function of diode current slope
(VR=400V, IF=10A,
Dynamic test circuit in Figure E)
30A
TJ=25°C
175°C
20A
10A
, FORWARD CURRENT
F
I
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
2,0V
1,5V
1,0V
, FORWARD VOLTAGE
F
V
0,5V
0,0V
-50°C 0°C 50°C 100°C 150°C
Figure 28. Typical diode forward voltage as a
a function of forward voltage
IF=20A
10A
5A
TJ, JUNCTION TEMPERATURE
function of junction temperature
Power Semiconductors
10 Rev. 2.3 Sep. 07
IKP10N60T
PG-TO-220-3-1
TrenchStop
®
Series p
Power Semiconductors
11 Rev. 2.3 Sep. 07
τ
τ
τ
IKP10N60T
TrenchStop
®
Series p
i,v
+
di /dt
F
I
F
I
rrm
t=t t
rr S F
Q=Q Q
rr S F
t
rr
t
S
Q
Q
S
+
t
F
F
90% I
10% I
di /dt
rr
rrm
rrm
t
V
R
Figure C. Definition of diodes
switching characteristics
p(t)
1
rrrr
1
T(t)
j
12 n
2
2
n
n
rr
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
=60nH
σ
an d Stray capacity Cσ =40pF.
Power Semiconductors
12 Rev. 2.3 Sep. 07
IKP10N60T
TrenchStop
®
Series p
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
13 Rev. 2.3 Sep. 07
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