INFINEON IKP06N60T User Manual
IKP06N60T
TrenchStop
®
Series p
Low Loss DuoPack : IGBT in TrenchStop
with soft, fast recovery anti-parallel EmCon HE diode
• Very low V
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
• TrenchStop
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
1.5 V (typ.)
CE(sat)
®
and Fieldstop technology for 600 V applications
1
for target applications
V
CE
I
C;Tc=100°C
V
CE(sat),Tj=25°CTj,max
®
and Fieldstop technology
Marking Package
G
PG-TO-220-3-1
C
E
IKP06N60T 600V 6A 1.5V
175°C
K06T60 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current, limited by T
T
= 25°C
C
T
= 100°C
C
jmax
Pulsed collector current, tp limited by T
Turn off safe operating area
≤ 600V, Tj ≤ 175°C
V
CE
Diode forward current, limited by T
= 25°C
T
C
= 100°C
T
C
Diode pulsed current, tp limited by T
jmax
jmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
Power dissipation
T
= 25°C
C
Operating junction temperature
Storage temperature
Soldering temperature
I
jmax
I
V
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
600 V
12
6
A
18
18
12
6
18
±20
5
V
µs
88 W
-40...+175
-55...+175
°C
260
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.3 Sep. 07
IKP06N60T
TrenchStop
®
Series p
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
R
thJC
thJCD
1.7
K/W
2.6
junction – case
R
Thermal resistance,
thJA
62
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=6A
CE(sat)
VGE=0V, IF=6A
F
IC=0.18mA,
GE(th)
VCE=600V,
VCE=0V,VGE=20V
VCE=20V, IC=6A
Gint
=0V,
I
=0.25mA
C
T
=25°C
j
=175°C
T
j
=25°C
T
j
T
=175°C
j
V
CE=VGE
VGE=0V
T
=25°C
j
=175°C
T
j
600 - -
-
-
-
-
1.5
1.8
1.6
1.6
2.05
2.05
V
-
4.1 4.6 5.7
-
-
-
-
40
700
µA
- - 100 nA
- 3.6 - S
none
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
V
=25V,
CE
=0V,
V
GE
f=1MHz
VCC=480V, IC=6A
V
=15V
GE
- 368 -
- 28 -
- 11 -
- 42 - nC
pF
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
I
C(SC)
=15V,tSC≤5 µs
V
GE
= 400V,
V
CC
T
= 25°C
j
- 55 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.3 Sep. 07
IKP06N60T
TrenchStop
®
Series p
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=6A,
CC
=0/15V,
V
GE
=23Ω,
R
G
2)
L
=60nH,
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 9 -
- 6 -
- 130 -
- 58 -
- 0.09 -
- 0.11 -
- 0.2 -
ns
mJ
Anti-Parallel Diode Characteristic
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=25°C,
j
=400V, IF=6A,
V
R
di
/dt=550A/µs
F
- 123 - ns
- 190 - nC
- 5.3 - A
- 450 -
A/µs
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=175°C,
j
V
=400V,IC=6A,
CC
V
=0/15V,
GE
= 23Ω
R
G
1)
L
=60nH,
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 9 -
- 8 -
- 165 -
- 84 -
- 0.14 -
- 0.18 -
- 0.335 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=175°C
j
V
=400V, IF=6A,
R
/dt=550A/µs
di
F
- 180 - ns
- 500 - nC
- 7.6 - A
- 285 -
Value
Unit
ns
mJ
A/µs
2)
Leakage inductance L
1)
Leakage inductance L
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
Power Semiconductors
3 Rev. 2.3 Sep. 07
IKP06N60T
18A
15A
TC=80°C
12A
9A
6A
, COLLECTOR CURRENT
C
I
3A
0A
100Hz 1kHz 10kHz 100kHz
I
c
I
c
f, SWITCHING FREQUENCY
TC=110°C
TrenchStop
Figure 1. Collector current as a function of
switching frequency
≤ 175°C, D = 0.5, VCE = 400V,
(T
j
V
= 0/+15V, RG = 23Ω)
GE
®
Series p
tp=1µs
10A
1A
, COLLECTOR CURRENT
C
I
0,1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
5µs
10µs
50µs
500µs
5ms
DC
Figure 2. Safe operating area
(D = 0, T
T
≤175°C;VGE=15V)
j
= 25°C,
C
80W
60W
40W
, POWER DISSIPATION
tot
P
20W
0W
25°C 50°C 75°C 100°C 125°C 150°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
15A
10A
5A
, COLLECTOR CURRENT
C
I
0A
Figure 4. Collector current as a function of
case temperature
≤ 175°C)
(T
j
25°C 75°C 125°C
TC, CASE TEMPERATURE
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
4 Rev. 2.3 Sep. 07
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