INFINEON IKP03N120H2 User Manual
IKP03N120H2
IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
nd
• 2
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E
optimized for IC =3A
off
• Qualified according to JEDEC
2
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
I
V
CE
E
C
Tj Marking Package
off
G
PG-TO-247-3-21
PG-TO-220-3-1
C
E
IKW03N120H2 1200V 3A 0.15mJ
150°C
K03H1202 PG-TO-247-3-21
IKP03N120H2 1200V 3A 0.15mJ 150°C K03H1202 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
Triangular collector current
= 25°C, f = 140kHz
T
C
T
= 100°C, f = 140kHz
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
V
≤ 1200V, Tj ≤ 150°C
CE
Diode forward current
= 25°C
T
C
= 100°C
T
C
Gate-emitter voltage
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
V
CE
I
C
Cpuls
-
I
F
V
GE
P
tot
T
j
, T
stg
1200 V
9.6
A
3.9
9.9
9.9
9.6
3.9
±20
V
62.5 W
-40...+150
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
2
J-STD-020 and JESD-022
Power Semiconductors
1 Rev. 2.3 Apr 06
IKP03N120H2
IKW03N120H2
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
R
IGBT thermal resistance,
thJC
junction – case
Diode thermal resistance,
R
thJCD
junction - case
Thermal resistance,
junction – ambient
thJA
P-TO-220-3-1
P-TO-247-3-21
R
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
VGE = 0, IF=2A
V
F
V
GE(th)
I
CES
I
GES
VCE=20V, IC=3A
g
fs
VGE=0V, IC=300µA
VGE = 15V, IC=3A
T
=25°C
j
=150°C
T
j
V
= 10V, IC=3A,
GE
T
=25°C
j
T
=25°C
j
=150°C
T
j
=90µA,VCE=VGE
I
C
VCE=1200V,VGE=0V
T
=25°C
j
=150°C
T
j
VCE=0V,VGE=20V
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
C
C
Q
L
iss
oss
rss
Gate
E
V
=25V,
CE
V
=0V,
GE
f=1MHz
VCC=960V, IC=3A
V
=15V
GE
PG-TO-220-3-1
PG-TO-247-3-21
2.0
K/W
3.2
62
Value
Unit
min. Typ. max.
1200 - -
-
-
-
-
-
2.2
2.5
2.4
2.0
1.75
2.8
2.5
V
-
-
-
2.1 3 3.9
-
-
-
-
20
80
µA
- - 100 nA
- 2 - S
- 205 -
pF
- 24 -
- 7 -
- 22 - nC
-
-
7
13
-
nH
-
Power Semiconductors
2 Rev. 2.3 Apr 06
IKP03N120H2
IKW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
=800V, IC=3A,
V
CC
V
=15V/0V,
GE
=82Ω,
R
G
2)
=180nH,
L
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
3)
reverse recovery.
- 9.2 -
- 5.2 -
- 281 -
- 29 -
- 0.14 -
- 0.15 -
- 0.29 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
di
rr
rr
rrm
/dt
F
rr
/dt
=25°C,
T
j
=800V, IF=3A,
V
R
R
=82Ω
G
- 42 - ns
- 0.23 - µC
- 10.3 - A
- 993 -
- 1180 -
Switching Characteristic, Inductive Load, at T
=150 °C
j
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
V
=800V,
CC
I
=3A,
C
=15V/0V,
V
GE
=82Ω,
R
G
2)
L
=180nH,
σ
2)
=40pF
C
σ
Energy losses include
“tail” and diode
3)
- 9.4 -
- 6.7 -
- 340 -
- 63 -
- 0.22 -
- 0.26 -
- 0.48 -
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
di
rr
rr
rrm
/dt
F
rr
/dt
T
=150°C
j
V
=800V, IF=3A,
R
R
=82Ω
G
- 125 - ns
- 0.51 - µC
- 12 - A
- 829 -
- 540 -
Value
Value
Unit
ns
mJ
A/µs
Unit
ns
mJ
A/µs
2)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
Power Semiconductors
3 Rev. 2.3 Apr 06
IKP03N120H2
IKW03N120H2
Switching Energy ZVT, Inductive Load
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
E
Turn-off energy
VCC=800V,
off
I
=3A,
C
V
=15V/0V,
GE
R
=82Ω,
G
2)
C
=4nF
r
=25°C
T
j
T
=150°C
j
-
-
Value
0.05
0.09
Unit
mJ
-
-
Power Semiconductors
4 Rev. 2.3 Apr 06
IKP03N120H2
IKW03N120H2
I
12A
10A
8A
TC=80°C
6A
TC=110°C
4A
, COLLECTOR CURRENT
C
I
2A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
I
c
f, SWITCHING FREQUENCY
c
10A
0,1A
, COLLECTOR CURRENT
C
I
0,01A
Figure 1. Collector current as a function of
switching frequency
≤ 150°C, D = 0.5, VCE = 800V,
(T
j
V
= +15V/0V, RG = 82Ω)
GE
1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
tp=1µs
5µs
10µs
50µs
100µs
500µs
DC
60W
50W
40W
30W
20W
, POWER DISSIPATION
tot
P
10W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function
of case temperature
≤ 150°C)
(T
j
12A
10A
8A
6A
4A
, COLLECTOR CURRENT
C
I
2A
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5 Rev. 2.3 Apr 06
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