INFINEON IKA10N60T User Manual
®
®
IKA10N60T
TrenchStop Series
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Features
• Very low V
1.5 V (typ.)
CE(sat)
• Maximum Junction Temperature 175°C
• Short circuit withstand time – 5µs
• TrenchStop and Fieldstop technology for 600 V applications
®
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt
Applications
• Washing Machine
• Air Condition
• Inverter and Variable Speed Drive
Type V
IC V
CE
CE(sat),Tj=25°CTj,max
Marking Code Package
C
G
E
PG-TO-220-3-31
(TO-220 FullPak)
IKA10N60T 600V 10A 1.5V
175°C
K10T60 PG-TO-220-3-31
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current, limited by T
= 25°C
T
C
= 100°C
T
C
jmax
Pulsed collector current, tp limited by T
Turn off safe operating area V
Diode forward current, limited by T
T
= 25°C
C
T
= 100°C
C
Diode pulsed current, tp limited by T
≤ 400V, Tj ≤ 150°C
CE
jmax
jmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, V
≤ 400V, Tj ≤ 150°C
CC
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Isolation voltage
I
jmax
I
V
CE
I
C
Cpuls
-
I
F
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
V
isol
600 V
11.7
7.2
A
30
30
11.9
7.4
30
±20
5
V
µs
30 W
-40...+175
-55...+175
2500 V
°C
rms
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.3 July 06
®
IKA10N60T
TrenchStop Series
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
thJC
thJCD
5
K/W
5.8
R
junction – case
R
Thermal resistance,
thJA
80
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
(BR)CESVGE
V
V
V
I
CES
I
GES
g
R
fs
VGE = 15V, IC=10A
CE(sat)
VGE=0V, IF=10A
F
IC=0.3mA,VCE=V
GE(th)
VCE=600V,
VCE=0V,VGE=20V
VCE=20V, IC=15A
Gint
=0V, IC=0.2mA
T
=25°C
j
T
=175°C
j
T
=25°C
j
T
=175°C
j
VGE=0V
=25°C
T
j
=175°C
T
j
600 - -
GE
-
-
-
-
4.1 4.6 5.7
-
-
1.5
1.8
1.6
1.6
-
-
- - 100 nA
- 6 - S
none
2.05
2.05
-
40
1000
V
µA
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
C
C
C
Q
L
iss
oss
rss
Gate
E
V
=25V,
CE
=0V,
V
GE
f=1MHz
VCC=480V, IC=10A
=15V
V
GE
- 551 -
- 40 -
- 17 -
- 62 - nC
pF
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
I
C(SC)
=15V,tSC≤5 µs
V
GE
V
= 400V,
CC
T
= 25°C
j
- 100 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.3 July 06
®
IKA10N60T
TrenchStop Series
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
=400V,IC=10A,
V
CC
V
=0/15V,
GE
=23Ω,
R
G
1)
L
=60nH,
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 12 -
- 8 -
- 215 -
- 38 -
- 0.16 -
- 0.27 -
- 0.43 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=25°C,
j
=400V, IF=10A,
V
R
di
/dt=880A/µs
F
- 115 - ns
- 0.38 - µC
- 10 - A
- 680 -
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=175°C,
j
V
=400V,IC=10A,
CC
V
=0/15V,
GE
= 23Ω
R
G
1)
L
=60nH,
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 10 -
- 11 -
- 233 -
- 63 -
- 0.26 -
- 0.35 -
- 0.61 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
b
t
Q
I
di
rr
rr
rrm
rr
/dt
T
=175°C
j
V
=400V, IF=10A,
R
di
/dt=880A/µs
F
- 200 - ns
- 0.92 - µC
- 13 - A
- 390 -
Value
Unit
ns
mJ
A/µs
Unit
ns
mJ
A/µs
1)
Leakage inductance L
Power Semiconductors
an d Stray capacity Cσ due to dynamic test circuit in Figure E.
σ
3 Rev. 2.3 July 06
®
IKA10N60T
TC=80°C
30A
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
I
c
I
c
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
≤ 175°C, D = 0.5, VCE = 400V,
(T
j
V
= 0/+15V, RG = 23Ω)
GE
TC=110°C
TrenchStop Series
10A
1A
, COLLECTOR CURRENT
C
I
0,1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
=15V)
V
GE
= 25°C, Tj ≤175°C;
C
tp=1µs
20µs
50µs
500µs
5ms
100ms
DC
30W
25W
20W
15W
, POWER DISSIPATION
10W
tot
P
5W
0W
25°C 50°C 75°C 100°C 125°C 150°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
10A
8A
6A
4A
, COLLECTOR CURRENT
C
I
2A
0A
Figure 4. Collector current as a function of
case temperature
≤ 175°C)
(T
j
25°C 75°C 125°C
TC, CASE TEMPERATURE
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
4 Rev. 2.3 July 06
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