INFINEON IKA03N120H2 User Manual
IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for:
- TV – Horizontal Line Deflection
nd
• 2
generation HighSpeed-Technology
for 1200V applications offers:
G
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- E
optimized for IC =3A
off
• Qualified according to JEDEC
2
for target applications
PG-TO220-3-31
(FullPAK)
PG-TO220-3-34
(FullPAK)
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKA03N120H2 1200V 3A 0.15mJ
IKA03N120H2 1200V 3A 0.15mJ
I
V
CE
E
C
Tj Marking Package
off
150°C
150°C
K03H1202 PG-TO-220-3-31
K03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter Symbol Value Unit
C
E
Collector-emitter voltage
Triangular collector peak current (VGE = 15V)
T
= 100°C, f = 32kHz
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
≤ 1200V, Tj ≤ 150°C
V
CE
Diode forward current
= 25°C
T
C
= 100°C
T
C
Gate-emitter voltage
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
V
CE
I
C
Cpuls
-
I
F
V
GE
P
tot
T
j
, T
stg
1200 V
8.2
9
9
9.6
3.9
±20
29 W
-40...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Isolation Voltage
V
isol
2500 V
A
V
°C
rms
2
J-STD-020 and JESD-022
Power Semiconductors
1 Rev. 2.2 July 06
IKA03N120H2
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
R
R
thJC
thJCD
4.3
5.8
K/W
junction - case
Thermal resistance,
R
thJA
62
junction – ambient
Electrical Characteristic, at T
Parameter Symbol Conditions
= 25 °C, unless otherwise specified
j
Value
Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
VGE = 0, IF=3A
V
F
V
GE(th)
I
CES
I
GES
VCE=20V, IC=3A
g
fs
VGE=0V, IC=300µA
VGE = 15V, IC=3A
T
=25°C
j
T
=150°C
j
V
= 10V, IC=3A,
GE
T
=25°C
j
T
=25°C
j
=150°C
T
j
=90µA,VCE=VGE
I
C
VCE=1200V,VGE=0V
T
=25°C
j
=150°C
T
j
VCE=0V,VGE=20V
1200 - -
-
-
-
-
-
2.2
2.5
2.4
1.55
1.6
2.8
2.1 3 3.9
-
-
-
-
20
80
- - 100 nA
- 2 -
V
-
-
-
-
µA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
iss
C
oss
C
rss
VCC=960V, IC=3A
Q
Gate
L
E
=25V,
V
CE
V
=0V,
GE
f=1MHz
- 205 -
pF
- 24 -
- 7 -
- 8.6 - nC
V
=15V
GE
-
7
-
nH
Power Semiconductors
2 Rev. 2.2 July 06
IKA03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
=800V,IC=3A,
V
CC
V
=0V/15V,
GE
=82Ω,
R
G
2)
=180nH,
L
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
3)
- 9.2 -
ns
- 5.2 -
- 281 -
- 29 -
- 0.14 -
mJ
- 0.15 -
- 0.29 -
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
t
Q
I
di
rr
rr
rrm
/dt
F
T
=25°C,
j
V
=800V, IF=3A,
R
R
G
=82Ω
- 52 - ns
- 0.23 - µC
- 9.3 - A
- 723 -
A/µs
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=150 °C
j
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
V
=800V, IC=3A,
CC
=0V/15V,
V
GE
=82Ω,
R
G
2)
L
=180nH,
σ
2)
C
=40pF
σ
Energy losses include
“tail” and diode
3)
- 9.4 -
- 6.7 -
- 340 -
- 63 -
- 0.22 -
- 0.26 -
- 0.48 -
ns
mJ
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
t
Q
I
di
rr
rr
rrm
/dt
F
T
=150°C
j
=800V, IF=3A,
V
R
R
G
=82Ω
- 112 - ns
- 0.52 - µC
- 11 - A
- 661 -
A/µs
2)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
Power Semiconductors
3 Rev. 2.2 July 06
IKA03N120H2
Switching Energy ZVT, Inductive Load
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
E
Turn-off energy
VCC=800V, IC=3A,
off
V
=0V/15V,
GE
R
=82Ω, C
G
=25°C
T
j
T
=150°C
j
2)
=4nF
r
-
-
0.05
0.09
mJ
-
-
Power Semiconductors
4 Rev. 2.2 July 06
12A
C
30W
IKA03N120H2
I
10A
c
10A
tp=10µs
20µs
8A
6A
4A
, COLLECTOR CURRENT
C
I
2A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
TC=25°C
TC=100°C
I
c
f, SWITCHING FREQUENCY
0,1A
, COLLECTOR CURRENT
C
I
0,01A
Figure 1. Collector current as a function of
switching frequency
≤ 150°C, D = 0.5, VCE = 800V,
(T
j
V
= +15V/0V, RG = 82Ω)
GE
1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
8A
= 25°C, Tj ≤ 150°C)
C
50µs
100µs
1ms
100ms
DC
20W
10W
, POWER DISSIPATION
tot
P
0W
25°C 50°C 75°C 100°C 125°C 150°
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function
of case temperature
(T
≤ 150°C)
j
6A
4A
, COLLECTOR CURRENT
2A
C
I
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5 Rev. 2.2 July 06
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