Infineon IHW30N90T Schematic

IHW30N90T Soft Switching Series q

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology

j,max

Marking Package

G

PG-TO-247-3

C

E

with anti-parallel diode

Features:

• 1.1V Forward voltage of antiparallel diode

• TrenchStop

:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- easy parallel switching capability due to positive

temperature coefficient in V

• Low EMI

• Qualified according to JEDEC

• Application specific optimisation of inverse diode

• Pb-free lead plating; RoHS compliant

Applications:

• Microwave Oven

• Soft Switching Applications for ZCS

Type V

®

and Fieldstop technology for 900 V applications offers

CE(sat)

1

for target applications

I

CE

V

C

CE(sat),Tj=25°C

T

IHW30N90T 900V 30A 1.5V

175°C

H30T90 PG-TO-247-3

Maximum Ratings Parameter Symbol Value Unit

Collector-emitter voltage V

DC collector current

= 25°C

T

C

T

= 100°C

C

Pulsed collector current, tp limited by T Turn off safe operating area V

≤ 900V, T

CE

I

jmax

≤ 175°C

j

Diode forward current

= 25°C

T

C

= 100°C

T

C

Diode pulsed current, tp limited by T

I

jmax

Gate-emitter voltage

Transient Gate-emitter voltage (t Power dissipation, T

= 25°C

C

< 5 ms)

p

Operating junction temperature T Storage temperature T

900 V

CE

I

C

60

A

30

90

Cpuls

I

F

90

23 13

36

Fpuls

V

GE

±20

V

±25

P

428 W

tot

-40...+175

j

-55...+175

stg

°C

Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1

J-STD-020 and JESD-022

Power Semiconductors

1 Rev. 2.3 Nov 08

IHW30N90T Soft Switching Series q

Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Electrical Characteristic, at T

= 25 °C, unless otherwise specified

j

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage V Collector-emitter saturation voltage V

Diode forward voltage

Gate-emitter threshold voltage V

Zero gate voltage collector current

Gate-emitter leakage current I Transconductance gfs VCE=20V, IC=20A - 26 - S

Dynamic Characteristic

Input capacitance C Output capacitance C Reverse transfer capacitance C Gate charge Q

Internal emitter inductance

measured 5mm (0.197 in.) from case

R

0.35

thJC

K/W

R

1.1

thJCD

40

thJA

Value

Unit

min. Typ. max.

(BR)CES

VGE = 15V, I

CE(sat)

VGE=0V, I

=25°C

T

j

=150° C

T

j

=175° C

T

j

=500μA

C

=30A

C

VF VGE=0V, IF=10A

=25°C

T

j

=150° C

T

j

=175° C

T

j

=150μA,VCE=V

GE(th)

I

CES

GES

- 2617 -

iss

oss

rss

Gate

L

- 13 - nH

E

I

C

V

=900V,

CE

V

=0V

GE

=25°C

T

j

=150° C

T

j

VCE=0V,VGE=20V - - 600 nA

=25V,

V

CE

V

- 96 -

VCC=720V, I

=0V,

GE

f=1MHz

V

=15V

GE

=30A

C

900 - -

-

4.6 5.3 6

GE

-

1.5

1.7

1.8

1.1

1.0

-

- 38 -

- 280 - nC

1.7

1.3

250

2500

V

-

μA

pF

Power Semiconductors

2 Rev. 2.3 Nov 08

IHW30N90T Soft Switching Series q

Switching Characteristic, Inductive Load, at T

Parameter Symbol Conditions

=25 °C

j

Value

Unit

min. Typ. max.

IGBT Characteristic

Turn-on delay time t Rise time t Turn-off delay time t Fall time t Turn-on energy E Turn-off energy E Total switching energy E

- 45 -

T

d(on)

- 26 -

r

- 556 -

d(off)

- 29 -

f

- - -

on

- 1.8 -

off

ts

=25°C,

j

=600V,I

V

CC

=0/15V,

V

GE

=15Ω,

R

G

=30A,

C

- 1.8 -

ns

mJ

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter Symbol Conditions

min. Typ. max.

IGBT Characteristic

Turn-on delay time t Rise time t Turn-off delay time t Fall time t Turn-on energy E Turn-off energy E Total switching energy E

- 44 -

T

d(on)

- 38 -

r

- 650 -

d(off)

- 41 -

f

- - -

on

- 2.4 -

off

ts

=175° C

j

=600V,

V

CC

I

=30A,

C

V

=0/15V,

GE

= 15Ω

R

G

- 2.4 -

Value

Unit

ns

mJ

Power Semiconductors

3 Rev. 2.3 Nov 08

IHW30N90T Soft Switching Series q

t

=1µs

p

80A

T

=80°C

C

60A

T

=110°C

C

40A

I

c

, COLLECTOR CURRENT

C

I

20A

0A

100Hz 1kHz 10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

10A

, COLLECTOR CURRENT

C

I

1A

Figure 2. IGBT Safe operating area switching frequency for triangular current (E

≤ 175°C, D = 0.5, V

(T

j

V

= 0/+15V, R

GE

= 0, hard turn-off)

on

= 600V,

CE

= 15Ω)

G

1V 10V 100V 1000V

V

, COLLECTOR-EMITTER VOLTAGE

CE

(D = 0, T

≤175°C;V

T

j

= 25°C,

C

=15V)

GE

10µs

20µs

50µs

200µs

1ms

DC

400W

350W

300W

250W

200W

150W

, DISSIPATED POWER

tot

P

100W

50W

0W

25°C 50°C 75°C 100°C 125°C 150°C

50A

40A

30A

20A

, COLLECTOR CURRENT

C

I

10A

0A

25°C 75°C 125°C

TC, CASE TEMPERATURE T

Figure 3. Power dissipation as a function of

case temperature

≤ 175°C)

(T

j

Figure 4. Collector current as a function of

case temperature

(VGE ≥ 15V, Tj ≤ 175°C)

, CASE TEMPERATURE

C

Power Semiconductors

4 Rev. 2.3 Nov 08

Infineon IHW30N90T Schematic [ru]