IHW30N90T
Soft Switching Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
j,max
Marking Package
G
PG-TO-247-3
C
E
with anti-parallel diode
Features:
• 1.1V Forward voltage of antiparallel diode
• TrenchStop
:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
• Low EMI
• Qualified according to JEDEC
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
Applications:
• Microwave Oven
• Soft Switching Applications for ZCS
Type V
®
and Fieldstop technology for 900 V applications offers
CE(sat)
1
for target applications
I
CE
V
C
CE(sat),Tj=25°C
T
IHW30N90T 900V 30A 1.5V
175°C
H30T90 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
DC collector current
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
Turn off safe operating area V
≤ 900V, T
CE
I
jmax
≤ 175°C
j
Diode forward current
= 25°C
T
C
= 100°C
T
C
Diode pulsed current, tp limited by T
I
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t
Power dissipation, T
= 25°C
C
< 5 ms)
p
Operating junction temperature T
Storage temperature T
900 V
CE
I
C
60
A
30
90
Cpuls
I
F
90
23
13
36
Fpuls
V
GE
±20
V
±25
P
428 W
tot
-40...+175
j
-55...+175
stg
°C
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
Power Semiconductors
1 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Diode forward voltage
Gate-emitter threshold voltage V
Zero gate voltage collector current
Gate-emitter leakage current I
Transconductance gfs VCE=20V, IC=20A - 26 - S
Dynamic Characteristic
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate charge Q
Internal emitter inductance
measured 5mm (0.197 in.) from case
R
0.35
thJC
K/W
R
R
1.1
thJCD
40
thJA
Value
Unit
min. Typ. max.
(BR)CES
VGE = 15V, I
CE(sat)
VGE=0V, I
=25°C
T
j
=150° C
T
j
=175° C
T
j
=500μA
C
=30A
C
VF VGE=0V, IF=10A
=25°C
T
j
=150° C
T
j
=175° C
T
j
=150μA,VCE=V
GE(th)
I
CES
GES
- 2617 -
iss
oss
rss
Gate
L
- 13 - nH
E
I
C
V
=900V,
CE
V
=0V
GE
=25°C
T
j
=150° C
T
j
VCE=0V,VGE=20V - - 600 nA
=25V,
V
CE
V
- 96 -
VCC=720V, I
=0V,
GE
f=1MHz
V
=15V
GE
=30A
C
900 - -
-
-
-
-
-
-
4.6 5.3 6
GE
-
-
1.5
1.7
1.8
1.1
1.0
1.0
-
-
- 38 -
- 280 - nC
1.7
1.3
250
2500
V
-
-
-
-
μA
pF
Power Semiconductors
2 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
Switching Characteristic, Inductive Load, at T
Parameter Symbol Conditions
=25 °C
j
Value
Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on energy E
Turn-off energy E
Total switching energy E
- 45 -
T
d(on)
- 26 -
r
- 556 -
d(off)
- 29 -
f
- - -
on
- 1.8 -
off
ts
=25°C,
j
=600V,I
V
CC
=0/15V,
V
GE
=15Ω,
R
G
=30A,
C
- 1.8 -
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter Symbol Conditions
min. Typ. max.
IGBT Characteristic
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on energy E
Turn-off energy E
Total switching energy E
- 44 -
T
d(on)
- 38 -
r
- 650 -
d(off)
- 41 -
f
- - -
on
- 2.4 -
off
ts
=175° C
j
=600V,
V
CC
I
=30A,
C
V
=0/15V,
GE
= 15Ω
R
G
- 2.4 -
Value
Unit
ns
mJ
Power Semiconductors
3 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
t
=1µs
p
80A
T
=80°C
C
60A
T
=110°C
C
40A
I
c
, COLLECTOR CURRENT
C
I
20A
0A
100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
10A
, COLLECTOR CURRENT
C
I
1A
Figure 2. IGBT Safe operating area
switching frequency for triangular
current (E
≤ 175°C, D = 0.5, V
(T
j
V
= 0/+15V, R
GE
= 0, hard turn-off)
on
= 600V,
CE
= 15Ω)
G
1V 10V 100V 1000V
V
, COLLECTOR-EMITTER VOLTAGE
CE
(D = 0, T
≤175°C;V
T
j
= 25°C,
C
=15V)
GE
10µs
20µs
50µs
200µs
1ms
DC
400W
350W
300W
250W
200W
150W
, DISSIPATED POWER
tot
P
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
50A
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
25°C 75°C 125°C
TC, CASE TEMPERATURE T
Figure 3. Power dissipation as a function of
case temperature
≤ 175°C)
(T
j
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
, CASE TEMPERATURE
C
Power Semiconductors
4 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
80A
70A
60A
50A
40A
30A
, COLLECTOR CURRENT
C
20A
I
10A
0A
0V 1V 2V 3V
Figure 5. Typical output characteristic
V
=20V
GE
15V
13V
11V
9V
7V
V
, COLLECTOR-EMITTER VOLTAGE
CE
= 25°C)
(T
j
80A
70A
60A
50A
40A
30A
, COLLECTOR CURRENT
C
I
20A
10A
0A
Figure 6. Typical output characteristic
V
=20V
GE
15V
13V
11V
9V
7V
0V 1V 2V 3V
V
, COLLECTOR-EMITTER VOLTAGE
CE
(T
= 175°C)
j
60A
50A
40A
30A
T
, COLLECTOR CURRENT
20A
C
I
10A
0A
0V 2V 4V 6V 8V
V
, GATE-EMITTER VOLTAGE T
GE
=175°C
J
25°C
Figure 7. Typical transfer characteristic
(V
=20V)
CE
2.0V
1.5V
1.0V
0.5V
COLLECTOR-EMITT SATURATION VOLTAGE
CE(sat),
0.0V
V
-50°C 0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
J
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
= 15V)
GE
I
=60A
C
I
=30A
C
I
=15A
C
Power Semiconductors
5 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
1000ns
t
d(off)
100ns
t
d(on)
100ns
t, SWITCHING TIMES
t
f
t
r
10ns
0A 10A 20A 30A 40A 50A
I
, COLLECTOR CURRENT
C
Figure 9. Typical switching times as a
t, SWITCHING TIMES
Figure 10. Typical s witching times as a
function of collector current
(inductive load, T
V
=600V, V
CE
=175°C,
J
=0/15V, R
GE
=15Ω,
G
Dynamic test circuit in Figure E)
t
d(off )
1µs
t
d(on)
t
r
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
R
, GATE RESISTOR
G
function of gate resistor
(inductive load, T
V
=600V, V
CE
=175°C,
J
=0/15V, I
GE
=30A,
C
Dynamic test circuit in Figure E)
t
f
t
d(off)
7V
6V
t, SWITCHING TIMES
100ns
t
f
t
d(on)
t
r
10ns
0°C 50°C 100°C 150°C
5V
4V
GATE-EMITT TRSHOLD VOLTAGE
3V
GE(th),
V
2V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE T
Figure 11. Typical s witching times as a
Figure 12. Gate-emitter thresh old voltage as
function of junction temperature
(inductive load, V
V
=0/15V, IC=30A, R
GE
=600V,
CE
=15Ω,
G
Dynamic test circuit in Figure E)
max.
typ.
min.
, JUNCTION TEMPERATURE
J
a function of junction temperature
= 0.3mA)
(I
C
Power Semiconductors
6 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
5mJ
4mJ
3mJ
2mJ
E, SWITCHING ENERGY LOSSES
1mJ
0mJ
10A 20A 30A 40A 50A
I
, COLLECTOR CURRENT
C
E
off
Figure 13. Typical switching energy losses
6 mJ
5 mJ
4 mJ
3 mJ
2 mJ
E, SWITCHING ENERGY LOSSES
1 mJ
0 mJ
Figure 14. Typical switching energy losses
as a function of collector current
(inductive load, T
V
=600V, V
CE
=175°C,
J
=0/15V, R
GE
=15Ω,
G
Dynamic test circuit in Figure E)
E
off
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω
R
, GATE RESISTOR
G
as a function of gate resistor
(inductive load, T
V
=600V, V
CE
=175°C,
J
=0/15V, I
GE
=30A,
C
Dynamic test circuit in Figure E)
3.0mJ
2.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
E, SWITCHING ENERGY LOSSES
0.5mJ
0.0mJ
400V 500V 600V 700V 800V
E, SWITCHING ENERGY LOSSES
1.5mJ
1.0mJ
0.5mJ
0.0mJ
E
off
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE V
Figure 15. Typical switching energy losses
Figure 16. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
V
=0/15V, IC=30A, R
GE
=600V,
CE
=15Ω,
G
Dynamic test circuit in Figure E)
E
off
, COLLECTOR-EMITTER VOLTAGE
CE
as a function of collector emitter
voltage
(inductive load, T
V
=0/15V, IC=30A, R
GE
=175°C,
J
=15Ω,
G
Dynamic test circuit in Figure E)
Power Semiconductors
7 Rev. 2.3 Nov 08
τ
τ
/
τ
τ
/
IHW30N90T
Soft Switching Series q
C
iss
1nF
180V
10V
720V
C
100pF
5V
, GATE-EMITTER VOLTAGE
GE
V
c, CAPACITANCE
oss
C
rss
0V
0nC 50nC 100nC 150nC 200nC 250nC
Q
, GATE CHARGE
GE
Figure 17. Typical gate charge
=30 A)
(I
C
10pF
Figure 18. Typical capacitanc e as a function
10
10
, TRANSIENT THERMAL RESISTANCE
thJC
Z
, TRANSIENT THERMAL RESISTANCE
thJC
Z
D=0.5
-1
10
K/W
0.2
R,(K/W)
0.1
0.02
0.1271 5.93*10-2
0.1098 6.99*10
0.0869 5.93*10-4
0.05
0.0262 5.54*10
R
1
0.01
C
=
1
10
-2
single pulse
K/W
10µs100µs 1ms 10ms 100ms
1/R1
C
τ
=
2
, (s)
R
R
2
2
-3
-5
2
0V 10V 20V
V
, COLLECTOR-EMITTER VOLTAGE
CE
of collector-emitter voltage
(V
=0V, f = 1 MHz)
GE
0
K/W
D=0.5
0.2
0.1
-1
K/W
0.05
0.02
0.01
single pulse
10µs 100µs 1ms 10ms 100ms
R,(K/W)
0.0715 9.45*10-2
0.2222 2.55*10
0.4265 3.6*10-3
0.364 5.1*10-4
0.0181 1.09*10-4
R
1
C
=
1
1/R1
τ
, (s)
-2
R
2
C
=
R
2
2
2
tP, PULSE WIDTH t
Figure 19. IGBT transient thermal
resistance
(D = t
/ T)
p
Figure 20. Typical Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
, PULSE WIDTH
P
Power Semiconductors
8 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
I
=20A
T
=25°C
J
30A
20A
, FORWARD CURRENT
F
I
10A
175°C
, FORWARD VOLTAGE
F
V
1.0V
0.5V
F
10A
3A
0A
0.0V 0.5V 1.0V 1.5V
V
, FORWARD VOLTAGE
F
Figure 21. Typical diode forward current as
a function of forward voltage
0.0V
-50°C 0°C 50°C 100°C 150°C
T
, JUNCTION TEMPERATURE
J
Figure 22. Typical diode forward voltage
as a function of junction temperature
Power Semiconductors
9 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
PG-TO247-3
M
MIN
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
19.80
4.17
3.50
5.49
6.04
5.44
3
MAX
5.16
2.53
2.11
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
20.31
4.47
3.70
6.00
6.30
M
MIN MAX
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
0.780
0.164
0.138
0.216
0.238
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
0.214
3
0.799
0.176
0.146
0.236
0.248
Z8B00003327
0
17-12-2007
0
5
5
7.5mm
03
Power Semiconductors
10 Rev. 2.3 Nov 08
v
j
τ
τ
τ
C
IHW30N90T
Soft Switching Series q
Figure A. Definition of switching times
i,
+
di /dt
F
I
F
I
rrm
t=t t
rr S F
Q=Q Q
rr S F
t
rr
t
S
Q
Q
S
+
t
F
F
90% I
10% I
di /dt
rr
rrm
rrm
t
V
R
Figure C. Definition of diodes
switching characteristics
1
rrrr
1
T(t)
p(t)
12 n
2
2
n
n
rr
T
Figure B. Definition of switching losses
Figure D. Thermal equivalent
circuit
Power Semiconductors
11 Rev. 2.3 Nov 08
IHW30N90T
Soft Switching Series q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Power Semiconductors
12 Rev. 2.3 Nov 08
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