INFINEON IGP03N120H2, IGW03N120H2 User Manual
IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
nd
• 2
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E
optimized for IC =3A
• Qualified according to JEDEC
off
2
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
IC E
CE
Tj Marking Package
off
PG-TO-220-3-1
C
G
PG-TO-247-3-21
E
IGW03N120H2 1200V 3A 0.15mJ
150°C
G03H1202 PG-TO-247-3-21
IGP03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector current
= 25°C, f = 140kHz
T
C
= 100°C, f = 140kHz
T
C
Pulsed collector current, tp limited by T
Turn off safe operating area
≤ 1200V, Tj ≤ 150°C
V
CE
I
jmax
I
C
Cpuls
-
Gate-emitter voltage VGE
Power dissipation
= 25°C
T
C
P
62.5 W
tot
Operating junction and storage temperature Tj , T
9.6
3.9
9.9
9.9
±20
-40...+150
stg
A
V
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
2
J-STD-020 and JESD-022
Power Semiconductors
1 Rev. 2.5 Sept. 07
IGP03N120H2
IGW03N120H2
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Gate-emitter threshold voltage V
Zero gate voltage collector current I
Gate-emitter leakage current I
Transconductance gfs VCE=20V, IC=3A - 2 - S
Dynamic Characteristic
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate charge Q
Internal emitter inductance
measured 5mm (0.197 in.) from case
R
2.0
thJC
K/W
R
PG-TO-220-3-1
thJA
PG-TO-247-3-21
62
40
Value
Unit
min. Typ. max.
(BR)CES
CE(sat)
GE(th)
CES
GES
- 205 -
iss
oss
rss
Gate
VGE=0V, IC=300μA
VGE = 15V, IC=3A
=25°C
T
j
=150°C
T
j
V
= 10V, IC=3A,
GE
T
=25°C
j
=90μA,VCE=VGE
I
C
VCE=1200V,VGE=0V
=25°C
T
j
=150°C
T
j
VCE=0V,VGE=20V - - 100 nA
=25V,
V
CE
V
- 24 -
=0V,
GE
f=1MHz
VCC=960V, IC=3A
V
=15V
GE
LE PG-TO-220-3-1
PG-TO-247-3-21
1200 - -
-
-
-
2.2
2.5
2.4
2.8
2.1 3 3.9
-
-
-
-
20
80
- 7 -
- 22 - nC
-
-
7
13
V
-
-
μA
pF
-
nH
-
Power Semiconductors
2 Rev. 2.5 Sept. 07
IGP03N120H2
IGW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time t
Rise time tr - 5.2 -
Turn-off delay time t
Fall time tf - 29 -
Turn-on energy Eon - 0.14 -
Turn-off energy E
Total switching energy Ets
- 9.2 -
T
d(on)
- 281 -
d(off)
- 0.15 -
off
=25°C,
j
V
=800V,IC=3A,
CC
V
=15V/0V,
GE
=82Ω,
R
G
2)
L
=180nH,
σ
2)
=40pF
C
σ
Energy losses include
“tail” and diode
3)
- 0.29 -
reverse recovery.
Switching Characteristic, Inductive Load, at T
=150 °C
j
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time t
Rise time tr - 6.7 -
Turn-off delay time t
Fall time tf - 63 -
Turn-on energy Eon - 0.22 -
Turn-off energy E
Total switching energy Ets
- 9.4 -
T
d(on)
- 340 -
d(off)
- 0.26 -
off
=150°C
j
V
=800V,
CC
I
=3A,
C
V
=15V/0V,
GE
=82Ω,
R
G
2)
L
=180nH,
σ
2)
=40pF
C
σ
Energy losses include
“tail” and diode
3)
- 0.48 -
reverse recovery.
Switching Energy ZVT, Inductive Load
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-off energy E
VCC=800V,
off
I
=3A,
C
=15V/0V,
V
GE
=82Ω,
R
G
2)
=4nF
C
r
=25°C
T
j
=150°C
T
j
-
-
Value
Unit
ns
mJ
Value
Unit
ns
mJ
Value
0.05
0.09
Unit
mJ
-
-
2)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
Power Semiconductors
3 Rev. 2.5 Sept. 07
IGP03N120H2
IGW03N120H2
I
12A
10A
8A
TC=80°C
6A
TC=110°C
4A
, COLLECTOR CURRENT
C
I
2A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
I
c
f, SWITCHING FREQUENCY
c
10A
1A
0,1A
, COLLECTOR CURRENT
C
I
,01A
Figure 1. Collector current as a function of
switching frequency
≤ 150°C, D = 0.5, VCE = 800V,
(T
j
= +15V/0V, RG = 82Ω)
V
GE
tp=1μs
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
5μs
10μs
50μs
100μs
500μs
DC
60W
50W
40W
30W
20W
, POWER DISSIPATION
tot
P
10W
0W
25°C 50°C 75°C 100°C 125°C
12A
10A
8A
6A
4A
, COLLECTOR CURRENT
C
I
2A
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
≤ 150°C)
(T
j
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
4 Rev. 2.5 Sept. 07
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