Infineon IFS75S12N3T4-B11 Data Sheet

Technische Information / technical information

IGBT-Module
IGBT-modules

MIPAQ™ sense Modul in Sixpack-Konfiguration mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommess­widerstand mit integriertem Σ/∆-Wandler und galvanisch getrennter digitalen Schnittstelle
MIPAQ™ sense module in Sixpack-configuration with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
with integrated Σ/∆-converter and galvanical isolation of the digital interface

Kenndaten
key data

Topologie
topology

Halbleiter-Nenndaten
rated semiconductor data

IFS75S12N3T4_B11

B6I

1200V, 75A

Art der Belastung
load type

Zielanwendung
target application

Sensoren
sensors

Digitale Schnittstelle
digital interface

Normen
standards

Blockschaltbild
block diagram

ohmsch-induktiv
resistive-inductive

Industrieantriebe, USV, Klimatisierungsgeräte, Solarumrichter
industrial drives, UPS, Air conditioning, Solar inverters

Strommesswiderstände für Laststrom, NTC für
Bodenplattentemperatur
shunts for output current, NTC for baseplate temperature

5V-CMOS, galvanische Trennung nach IEC61800-5-1
5V-CMOS, galvanic isolation according to IEC61800-5-1

IEC61800-5-1 (Overvoltage Category III, Polution Degree 2,
Insulating Material Groupe II), UL94, RoHs

σ/δ σ/δ σ/δ

Foto
photo

prepared by: US date of publication: 16.08.2011

approved by: MH revision: 2.1

ϑ

1(13)

DB_IFS75S12N3T4_B11_2V1_2011-08-16

Technische Information / technical information

Gate-Emitter Reststrom

IGBT-Module
IGBT-modules

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

IFS75S12N3T4_B11

Tvj = 25°C V

TC = 95°C, Tvj = 175°C I

tP = 1 ms I

TC = 25°C, Tvj = 175°C P

Zieldaten / target data

1200 V

75 A

150 A

349 W

+/-20 V

C,nom

V

CES

CRM

tot

GES

Charakteristische Werte / characteristic values

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Gateladung
gate charge

Interner Gatewiderstand
internal gate resistor

Eingangskapazität
input capacitance

Rückwirkungskapazität
reverse transfer capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

IC = 75 A, VGE = 15 V, Tvj = 25°C
IC = 75 A, VGE = 15 V, Tvj = 125°C
IC = 75 A, VGE = 15 V, Tvj = 150°C

IC = 4,00 mA, VCE = VGE, Tvj = 25°C V

VGE = -15 V ... +15 V Q

Tvj = 25°C R

f = 1 MHz,Tvj = 25 °C,VCE = 25 V, VGE = 0 V C

f = 1 MHz, Tvj = 25 °C,VCE = 25 V, VGE = 0 V C

VCE = 1200 V, VGE = 0 V, Tvj = 25 °C I

VCE = 0 V, VGE = 20 V, Tvj = 25°C I

IC = 75 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj =125°C t
R

= 2,2 Ω Tvj =150°C

Gon

IC = 75 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj =125°C t
R

= 2,2 Ω Tvj =150°C

Gon

IC = 75 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj =125°C t
R

= 2,2 Ω Tvj =150°C

Goff

IC = 75 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V Tvj =125°C t
R

= 2,2 Ω Tvj =150°C

Goff

IC = 75 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V, diC/dt = 2,4 kA/µs (Tvj =150°C) Tvj =125°C E
R

= 2,2 Ω Tvj =150°C

Goff

IC = 75 A, VCE = 600 V Tvj = 25°C
VGE = ±15 V, duCE/dt = 3,3 kV/µs (Tvj =150°C) Tvj =125°C E
R

= 2,2 Ω Tvj =150°C

Goff

VGE ≤ 15 V, VCC = 800 V
V

CEmax=VCES -LsCE

pro IGBT / per IGBT

pro IGBT / per IGBT

λ

= 1 W/(m*K) / λ

Paste

·di/dt, tP ≤ 10 µs, Tvj ≤ 150°C

= 1 W/(m*K)

grease

min. typ. max.

V

CE sat

5,2 5,8 6,4 V

GE(th)

G

Gint

ies

res

CES

GES

d,on

r

d,off

f

on

off

I

SC

R

thJC

R

thCH

1,85 2,15 V
2,15 V
2,25 V

0,57 µC

10

4,30 nF

0,16 nF

1,0 mA

100 nA

0,135 µs

0,15 µs
0,152 µs
0,036 µs
0,042 µs
0,045 µs

0,33 µs

0,38 µs

0,42 µs
0,108 µs
0,190 µs
0,222 µs

4,87 mJ

7,7 mJ
8,92 mJ
4,76 mJ
7,16 mJ
7,95 mJ

270

0,43

K/W

0,195 K/W

Ω

A

prepared by: US date of publication: 16.08.2011

approved by: MH revision: 2.1

2(13)

DB_IFS75S12N3T4_B11_2V1_2011-08-16

Technische Information / technical information

pro Diode / per diode

IGBT-Module
IGBT-modules

Diode-Wechselrichter / diode-inverter

Höchstzulässige Werte / maximum rated values

Periodische Spitzensperrspannung
repetitive peak reverse voltage

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

Grenzlastintegral
I2t - value

Spitzenverlustleistung
maximum power dissipation

IFS75S12N3T4_B11

Tvj = 25°C V

tP = 1 ms I

VR = 0V, tP = 10ms, Tvj = 125°C
VR = 0V, tP = 10ms, Tvj = 150°C

TC = 25°C, Tvj = 175°C P

Zieldaten
Target Data

RRM

I

F

FRM

I2t

RQM

1200 V

75 A

150 A

960
960

217 W

A²s
A²s

Charakteristische Werte / characteristic values

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

IF = 75 A, VGE = 0V Tvj = 25°C
IF = 75 A, VGE = 0V Tvj=125°C V
IF = 75 A, VGE = 0V Tvj=150°C

IF = 75 A, - diF/dt = 2,9 kA/µs (Tvj = 150°C) Tvj = 25°C

VR = 600V Tvj = 125°C I
VGE = -15V Tvj=150°C

IF = 75 A, - diF/dt = 2,9 kA/µs (Tvj = 150°C) Tvj = 25°C

VR = 600V Tvj = 125°C Q
VGE = -15V Tvj =150°C

IF =75 A, - diF/dt = 2,9 kA/µs (Tvj = 150°C) Tvj = 25°C

VR = 600V Tvj = 125°C E
VGE = -15V Tvj =150°C

pro Diode / per diode

λ

= 1 W/(m*K) / λ

Paste

Strommesswiderstand / shunt

Charakteristische Werte / characteristic values

Nennwiderstand
rated resistance

Temperaturkoeffizient
temperature coefficient (tcr)

Betriebstemperatur Strommesswiderstand
operation temperature shunt

Innerer Wärmewiderstand;
thermal resistance; junction to case

25°C < T

20°C - 60°C

= 1 W/(m*K)

grease

< 200°C R

shunt

min. typ. max.

F

RM

r

rec

R

thJC

R

thCH

min. typ. max.

2,376 2,40 2,424

25

ϑ

CR

T

vjop

R

thJC

1,70 2,15 V
1,65 V
1,65 V

91 A

98 A

105 A

8,2 µC

13,8 µC
15,5 µC

4,8 mJ

6,9 mJ

7,7 mJ

0,69

0,31 K/W

< 30 ppm/K

13,0 K/W

K/W

mΩ

200 °C

prepared by: US date of publication: 16.08.2011
approved by: MH revision: 2.1

3(13)

DB_IFS75S12N3T4_B11_2V1_2011-08-16

Technische Information / technical information

Material für innere Isolation

thermal resistance, case to heatsink

λ

Paste

= 1 W/(m*K) /

λ

grease

= 1 W/(m*K)

Höchstzulässige Sperrschichttemperatur

Temperatur im Schaltbetrieb

Zulässige Gehäuse-Betriebstemperatur

Anzugsdrehmoment f. mech. Befestigung

IGBT-Module
IGBT-Modules

NTC-Widerstand / NTC-thermistor

Charakteristische Werte / characteristic values min. typ. max.

Nennwiderstand
rated resistance

Abweichung von R
deviation of R

Verlustleistung
power dissipation

B-Wert
B-value

B-Wert
B-value

B-Wert
B-value

Angaben gemäß gültiger Application Note.
Specification according to the valid application note.

100

100

IFS75S12N3T4_B11

TC = 25°C R

TC = 100°C, R

TC = 25°C P

R2 = R25 exp [B(1/T2 - 1/(298,15K))] B

R2 = R25 exp [B(1/T2 - 1/(298,15K))] B

R2 = R25 exp [B(1/T2 - 1/(298,15K))] B

100

= 493 Ω

Zieldaten
Target Data

25

-5 5 %

∆R/R

25

25/50

25/80

25/100

5,00

20,0 mW

3375 K

3411 K

3433 K

kΩ

Modul / module

Isolations-Prüfspannung
insulation test voltage

Material Modulgrundplatte
material of module baseplate

material for internal insulation
Kriechstrecke

creepage distance
Luftstrecke

clearance
Vergleichszahl der Kriechwegbildung

comperative tracking index

Übergangs-Wärmewiderstand

Modulinduktivität
stray inductance module

Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip

maximum junction temperature

temperature under switching conditions

allowed operation case temperature
Lagertemperatur

storage temperature

mounting torque
Gewicht

weight

RMS, f = 50 Hz, t = 1 min

Kontakt - Kühlkörper / Kontakt - Kontakt
terminal to heatsink / terminal to terminal

Kontakt - Kühlkörper / Kontakt - Kontakt
terminal to heatsink / terminal to terminal

pro Modul / per module

TC = 25°C, pro Schalter / per switch
(Rshunt ist inklusive / Rshunt is inclusiv)
Wechselrichter
inverter
Wechselrichter
inverter
Bodenplatte / Kontakt
base plate / contact

Schraube M5 - Montage gem. gültiger Applikation Note
screw M5 - mounting according to valid application note

min. typ. max.

V

ISOL

d

creepage

d

clearance

CTI > 200

2,5 kV

CU

Al2O

3

10 mm

7,5 mm

min. typ. max.

R

thCH

L

sCE

R

CC´+EE´

T

vj max

T

vj op

T

c op

T

stg

M 3,00 - 6,00 Nm

G 316 g

0,011 K/W

22 nH

1,2

175 °C

-40 150 °C

-40 125 °C

-40 125 °C

mΩ

prepared by: US date of publication: 16.08.2011
approved by: MH revision: 2.1

4(13)

DB_IFS75S12N3T4_B11_2V1_2011-08-16