
preliminary data
date of publication: 2012-05-25
Industrial drives, UPS, solar
inverters, auxiliary inverters
temperature, short circuit,
signal transmission, UVLO
for all power supplies
Electrical, 5V-CMOS,
Galvanic Isolation according
to IEC61800-5-1
Key data
Power module using IGBT4 technology in sixpack configuration.
Isolated IGBT driver, protection and temperature sensor included.

preliminary data
date of publication: 2012-05-25
Electrical data – power part
Ls = 30nH
-40 < Tvj < 150°C
0 < I
C turn off
< 2*I
C max
IGBT continuous DC collector
current
T
case
= 100°C
Tvj = T
vjop max
IGBT collector-emitter voltage
IGBT collector-emitter
saturation voltage
Tvj =25°C @ IC=150A
Tvj =150°C @ IC=150A
Diode repetitive peak reverse
voltage
Tvj =25°C @ IC=150A
Tvj =150°C @ IC=150A
Operating junction temperature
Turn on energy loss per pulse
IGBT, UDC=600V, IC=150A
Tvj=150°C, di/dt,= 2,8kA/µs
Turn off energy loss per pulse
IGBT, UDC=600V, IC=150A
Tvj=150°C, du/dt = 3,5kV/µs
Diode, UDC=600V, IF=150A
Tvj=150°C, di/dt = 2,8kA/µs
Electrical data – control part
Auxiliary power supply: IGBT Gate (on X1)
IGBT driver positive supply
Current at fsw = 20kHz,
U
GSP1,2,3
= +15V
Tvj = 25°C
IGBT driver negative supply
Current @ fsw = 20kHz,
U
GSN
= -8V
Tvj = 25°C
IGBT driver undervoltage lockout
threshold
IGBT driver undervoltage lockout
hysteresis
Auxiliary power supply: Logic (on X2)
Logic power supply
Voltage
Current @ fsw = 20kHz,
ULS = +5V
Logic power supply undervoltage
lockout threshold
Logic power supply undervoltage
lockout hysteresis

preliminary data
date of publication: 2012-05-25
Driver logic input/output, protection and sensors (on X2)
Digital input
(IGBT turn-on/off and RESET)
Minimum pulse width on /RST
for ENABLE/SHUTDOWN
Minimum pulse width on /RST
for resetting /FLT
BOT
, /FLT
TOP
Open drain, internally pulled
up, max. 10 mA
U
RDYT
,
U
RDYB
,
U
FLTT
,
U
FLTB
,
U
TMP
Digital temperature output
Frequency depends on
IGBT-turn-on signal (=high) on
each channel @ U
DC max
Between TOP IGBT and BOT
IGBT
Short circuit protection
Desaturation threshold.
Shutdown when exceeded.
Each channel
Reaction time. Shutdown after
short circuit was detected.
Each channel
Propagation delay deviation
Isolation management designed for
Isolation test voltage
Logic to power side
Life parts to base plate
F=50Hz, 1=1min
Comparative tracking index
Clearance distance, including internal
clearance
DIN7984 with flat head,
SKS-5 spring washer,
DIN125 flat washer,
terminal – terminal
(AC-DC, AC-AC, DC-DC)
Creepage distance
Under usage of screws according
DIN7984 with flat head,
SKS-5 spring washer,
DIN125 flat washer
terminal – terminal
(AC-DC, AC-AC, DC-DC)

preliminary data
date of publication: 2012-05-25
Operating ambient temperature
Terminal connection torque
Thermal resistance junction to case
Thermal resistance junction to case
Thermal resistance case to heatsink
Material of module baseplate

preliminary data
date of publication: 2012-05-25
Digital temperature output
Number of pulses within 100ms
0
100
200
300
400
500
600
700
800
900
1000
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120
Output characteristic IGBT
IC = f(UCE) @ U
GSPx
= 16V
0
30
60
90
120
150
180
210
240
270
300
0 0,5 1 1,5 2 2,5 3
- - - Tvj = 150°C
_____
Tvj = 25°C
Output characteristic IGBT
IC = f(UCE) @ Tvj = 150°C
0
30
60
90
120
150
180
210
240
270
300
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
……..
U
GSPx
= 18V
- - - U
GSPx
= 16V
_____
U
GSPx
= 14V
Switching losses diode
E
rec
= f(IF) @ UCE = 600V, Tvj = 150°C
0
2
4
6
8
10
12
14
16
18
0 30 60 90 120 150 180 210 240 270 300
Forward characteristic diode
IF = f(UF)
0
30
60
90
120
150
180
210
240
270
300
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4
- - - Tvj = 150°C
_____
Tvj = 25°C
Switching losses IGBT
Eon = f(IC), E
off
= f(IC)
U
GSPx
= 16V, U
GSNx
= -8V, Tvj = 150°C
0
5
10
15
20
25
30
35
40
0 50 100 150 200 250 300

preliminary data
date of publication: 2012-05-25
Mechanical drawing

preliminary data
date of publication: 2012-05-25
V
High voltage
area in grey
Galvanic
Isolation
high voltage area
Connector X2
digital I/O and
power supply for digital I/O circuit
W
DC+
U
Connector X1
power supply for
IGBT Gate
NTC
EiceDRIVER™
T1
EiceDRIVER™
B1
EiceDRIVER™
T2
EiceDRIVER™
B2
EiceDRIVER™
T3
EiceDRIVER™
B3
EiceDRIVER™
HB1H
21
19
17
15
13
11
9
7GND
GND
GND
GND
GND
GND
GND
GND
22IN
T3
1IN
B3
20IN
T2
2IN
B2
18IN
T1
4IN
B1
14RDY
T
8RDY
B
16/FLT
T
6/FLT
B
3/RST
4T1
pos
1T1
GND
3T1
neg
8
7
9
14
13
15
19
21
20
T2
pos
T2
GND
T2
neg
T3
pos
T3
GND
T3
neg
B
pos
B
GND
B
neg
12V
CC
10TMP
DC-
5GND
U
GS P3
= U(T3
pos
) – U(T3
GND
)
U
GS N3
= U(T3
neg
) – U(T3
GND
)
U
GS P2
= U(T2
pos
) – U(T2
GND
)
U
GS N2
= U(T2
neg
) – U(T2
GND
)
U
GS P1
= U(T1
pos
) – U(T1
GND
)
U
GS N1
= U(T1
neg
) – U(T1
GND
)
U
GS P4
= U(B
pos
) – U(B
GND
)
U
GS N4
= U(B
neg
) – U(B
GND
)
ULS= U(VCC) – U(GND)
U
IN_H
= U(V
INx
) – U(GND)
for high input signal
IGBT turn-on
U
IN_L
= U(V
INx
) – U(GND)
for low input signal
IGBT turn-off
U
RDY_T
= U(RDYT) – U(GND)
U
RDY_B
= U(RDYB) – U(GND)
U
FLT_T
= U(/FLTT) – U(GND)
U
FLT_B
= U(/FLTB) – U(GND)
U
TMP
= U(TMP) – U(GND)
Pin Datasheet value
Pin
Datasheet value
low voltage area
Connector X1 and X2 Power connectorMIPAQ™serve inside
Further information
X1: Molex Microfit 22 pins
X2: Molex Milligrid 22 pins
All information regarding connectors can be found in AN2009-07
Circuit diagram

preliminary data
date of publication: 2012-05-25
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The data contained in this technical information is exclusively intended for technically trained staff. You and your technical
departments will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is
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Bevor Sie mit der Installation und dem Betrieb der Baugruppe beginnen, lesen Sie bitte sorgfältig alle Sicherheitshinweise und
Warnungen.
Safety Instructions
Prior to installation and operation, all safety notices and warnings have to be carefully read.
gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen.
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- the conclusion of Quality Agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization
of any such measures.