INFINEON IDW40G65C5 Datasheet

SiC

Silicon Carbide Diode

5th Generation thinQ!

650V SiC Schottky Diode

TM

IDW40G65C5

Final Datasheet

Rev. 2.2, 2013-01-15

Power Management & Multimarket

IDW40G65C55th Generation thinQ!™ SiC Schottky Diode

1 Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. Thanks to the more compact design and thin-wafer
technology, the new family of products shows improved efficiency over all load
conditions, resulting from both the improved thermal characteristics and a lower
figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC
 Breakdown voltage tested at 88 mA

1)

for target applications

2)

 Optimized for high temperature operation

Benefits

 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability due to lower operating temperatures
 Reduced EMI

Applications

 Switch mode power supply
 Power factor correction
 Solar inverter
 Uninterruptible power supply

Table 1 Key Performance Parameters

Parameter Value Unit

VDC
QC; VR=400V 55 nC
EC; VR=400V 12.8 µJ
IF @ TC < 110°C 40 A

Table 2 Pin Definition

Pin 1 Pin 2 Pin 3

n.c. C A

Type / ordering Code Package Marking Related links

IDW40G65C5 PG-TO247-3 D4065C5 www.infineon.com/sic

650 V

1

2

3

1

2

3

CASE

1) J-STD20 and JESD22

2) All devices tested under avalanche conditions for a time periode of 10ms

Final Data Sheet 2 Rev. 2.2, 2013-01-15

5

th

Generation thinQ!TM SiC Schottky Diode

IDW40G65C5

Table of contents

Table of Contents

1 Description .......................................................................................................................................... 2

2 Maximum ratings ................................................................................................................................ 4

3 Thermal characteristics ..................................................................................................................... 4

4 Electrical characteristics ................................................................................................................... 5

5 Electrical characteristics diagrams .................................................................................................. 6

6 Simplified Forward Characteristics Model ...................................................................................... 8 

7 Package outlines ................................................................................................................................ 9

8 Revision History ............................................................................................................................... 10

Final Data Sheet 3 Rev. 2.2, 2013-01-15

5

th

Generation thinQ!TM SiC Schottky Diode

IDW40G65C5

Maximum ratings

2 Maximum ratings

Table 3 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Continuous forward current IF – –

Surge non-repetitive forward current,
sine halfwave

Non-repetitive peak forward current I

i²t value

I

F,SM

– –

F,max

∫ i²dt

– –

– –

– –

– –

Repetitive peak reverse voltage V

Diode dv/dt ruggedness

Power dissipation P

Operating and storage temperature Tj;T

Mounting torque

– –

RRM

dv/dt

– –

tot

-55 –

stg

– –

– 50

40

182

153

1432

166

118

650

100

183

175

70

TC < 110°C, D=1

= 25°C, tp=10 ms

T

A

C

TC = 150°C, tp=10 ms

TC = 25°C, tp=10 µs

A²s TC = 25°C, tp=10 ms

TC = 150°C, tp=10 ms

V

V/ns VR=0..480 V

W TC = 25°C

°C

Ncm M3 and M4 screws

3 Thermal characteristics

Table 4 Thermal characteristics TO-247-3
Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Thermal resistance, junction-case R

Thermal resistance, junction­ambient

Soldering temperature,
wavesoldering only allowed at leads

–

thJC

R

thJA

T

sold

– –

– –

0.6 0.8

K/W

62

260

°C

leaded

1.6mm (0.063 in.) from
case for 10 s

Final Data Sheet 4 Rev. 2.2, 2013-01-15