INFINEON IDW20G65C5B Datasheet
Power Management & Multimarket
SiC
Silicon Carbide Diode
Final Datasheet
Rev. 2.0, 2015-04-13
5th Generation thinQ!
TM
650V SiC Schottky Diode
IDW20G65C5B
Parameter
Value
Unit
VDC
650
V
QC; VR=400V
2 x 15
nC
EC; VR=400V
2 x 3.5
µJ
IF @ TC < 125°C
2 x 10
A
Pin 1
Pin 2
Pin 3
A C A
Type / ordering Code
Package
Marking
Related links
IDW20G65C5B
PG-TO247-3
D2065B5
www.infineon.com/sic
IDW20G65C5B
5
th
Generation thinQ!™ SiC Schottky Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 9 mA
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1 Key Performance Parameters 4)
2) 3)
Table 2 Pin Definition
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
3) Per Leg
4) Per Device
Final Datasheet 2 Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
IDW20G65C5B
Table of contents
Table of Contents
1 Description .......................................................................................................................................... 2
2 Maximum ratings ................................................................................................................................ 4
3 Thermal characteristics ..................................................................................................................... 4
4 Electrical characteristics ................................................................................................................... 5
5 Electrical characteristics diagrams .................................................................................................. 6
6 Simplified Forward Characteristics Model ...................................................................................... 8
7 Package outlines ................................................................................................................................ 9
8 Revision History ............................................................................................................................... 10
Final Datasheet 3 Rev. 2.00, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Continuous forward current 1)
IF
–
–
10
A
TC < 125°C, D=1
Surge non-repetitive forward current, sine
halfwave 1)
I
F,SM
–
–
58
TC = 25°C, tp=10 ms
–
–
46
TC = 150°C, tp=10 ms
Non-repetitive peak forward current 1)
I
F,max
–
–
431
TC = 25°C, tp=10 µs
i²t value 1)
∫ i²dt
–
–
16.6
A²s
TC = 25°C, tp=10 ms
–
–
10.5
TC = 150°C, tp=10 ms
Repetitive peak reverse voltage
V
RRM
–
–
650
V
Tj = 25°C
Diode dv/dt ruggedness
dv/dt
–
–
100
V/ns
VR=0..480 V
Power dissipation 2)
P
tot
–
–
130
W
TC = 25°C
Operating and storage temperature
Tj;T
stg
-55
–
175
°C Mounting torque
–
50
70
Ncm
M3 screws
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Thermal resistance, junction-case 1)
R
thJC
–
1.8
2.3
K/W
Thermal resistance, junction-ambient 1)
R
thJA
–
–
62
leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from
case for 10 s
IDW20G65C5B
Maximum ratings
2 Maximum ratings
Table 3 Maximum ratings
3 Thermal characteristics
Table 4 Thermal characteristics TO-247-3
1) Per Leg
2) Per Device
Final Datasheet 4 Rev. 2.0, 2015-04-13
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