INFINEON IDT10S60C User Manual

IDT10S60C

2nd Generation thinQ!TM SiC Schottky Diode

Features

• Revolutionary semiconductor material - Silicon Carbide

• Switching behavior benchmark

Product Summary

V

DC

Q

c

I

F

• No reverse recovery/ No forward recovery

• No temperature influence on the switching behavior

• High surge current capability

• Pb-free lead plating; RoHs compliant

1)

• Qualified according to JEDEC

• Breakdown voltage tested at 5mA

for target applications

2)

thinQ! 2G Diode specially designed for fast switching applications like:

• CCM PFC

• Motor Drives

600 V

24 nC

10 A

PG-TO220-2-2

Type Package Marking Pin 1 Pin 2

I

=5 A, Tj=25 °C

F

IDT10S60C PG-TO220-2-2 D10S60C C A

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous forward current

RMS forward current

Surge non-repetitive forward current,
sine halfwave

Repetitive peak forward current

Non-repetitive peak forward current

i²t value

Repetitive peak reverse voltage

Diode ruggedness dv/dt dv/ dt

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

F

I

F,RMS

I

F,SM

I

F,RM

I

F,max

2

∫i

V

P

T

RRM

tot

, T

j

TC<140 °C

f =50 Hz 15

TC=25 °C, tp=10 ms

Tj=150 °C,
T

=100 °C, D =0.1

C

TC=25 °C, tp=10 µs

dt

C

=0…480V

V

R

=25 °C, tp=10 ms

T

TC=25 °C

stg

Value

10 A

84

39

350

35

A

600 V

50 V/ns

100 W

-55 ... 175 °C

2

s

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 2.0 page 1 2006-03-14

IDT10S60C

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance,
junction - ambient

Soldering temperature,
wavesoldering only allowed at leads

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

T

sold

leaded - - 62

1.6mm (0.063 in.) from
case for 10s

- - 1.5 K/W

- - 260 °C

Static characteristics

DC blocking voltage

Diode forward voltage

V

DC

V

F

IR=0.14 mA

IF=10 A, Tj=25 °C

I

=10 A, Tj=150 °C

F

600 - - V

- 1.5 1.7

- 1.7 2.1

Reverse current

I

R

VR=600 V, Tj=25 °C

V

=600 V, Tj=150 °C

R

- 1.4 140 µA

- 5 1400

AC characteristics

=400 V, IF≤I

V

Total capacitive charge

Switching time

3)

Q

c

t

c

Total capacitance C

1)

J-STD20 and JESD22

2)

All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.

3)

tc is the time constant for the capacitive displacement current waveform (independent from Tj, I

di/dt), different from t

, which is dependent on Tj, I

rr

R

di

/dt =200 A/µs,

F

T

=150 °C

j

=1 V, f =1 MHz

V

R

V

=300 V, f =1 MHz

R

V

=600 V, f =1 MHz

R

, di/dt. No reverse recovery time constant trr due to

LOAD

F,max

,

-24-nC

- - <10 ns

- 480 - pF

-60-

-60-

absence of minority carrier injection.

4)

Only capacative charge occuring, guaranteed by design.

LOAD

and

Rev. 2.0 page 2 2006-03-14

1 Power dissipation 2 Diode forward current

P

=f(TC) IF=f(TC); Tj≤175 °C

tot

parameter: R

thJC(max)

parameter: R

thJC(max)

; V

IDT10S60C

F(max)

100

80

60

[W]

tot

P

40

20

0

25 50 75 100 125 150 175 200

TC [°C]

30

25

20

15

[A]

F

I

10

5

0

25 50 75 100 125 150 175 200

TC [°C]

3 Typ. forward characteristic 4 Typ. forward characteristic in surge current

I

=f(VF); tp=400 µs

F

parameter: T

j

mode

IF=f(VF); tp=400 µs; parameter: T

j

30

25 °C

20

[A]

F

I

10

0

01234

-55 °C

100 °C

150 °C

175°C

VF [V]

120

100

80

60

[A]

F

I

40

20

0

02468

25 °C

100 °C

150 °C

-55 °C

175°C

VF [V]

Rev. 2.0 page 3 2006-03-14