INFINEON IDH05SG60C Datasheet
IDH05SG60C
3
rd
Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
thinQ! 3G Diode designed for fast switching applications like:
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current
I
F
TC<130 °C
5 A
I
F,SM
TC=25 °C, tp=10 ms
26
TC=150 °C, tp=10 ms
18
Non-repetitive peak forward current
I
F,max
TC=25 °C, tp=10 µs
150
∫i2dt
TC=25 °C, tp=10 ms
3.2
A2s
TC=150 °C, tp=10 ms
2
Repetitive peak reverse voltage
V
RRM
Tj=25 °C
600 V
Diode dv/dt ruggedness
dv/dt
V
R
= 0….480 V
50 V/ns
Power dissipation
P
tot
TC=25 °C
56 W
Operating and storage temperature
Tj, T
stg
-55 ... 175 °C
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm (0.063 in.)
from case for 10s
260
Mounting torque
M3 and M3.5 screws 60 Ncm
• Breakdown voltage tested at 20mA
2)
• Optimized for high temperature operation
• Lowest Figure of Merit Q
C/IF
i²t value
Value
Surge non-repetitive forward current,
sine halfwave
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
V
DC
600
V
Q
C
6
nC
IF; TC< 130 °C
5
A
Product Summary
Type
Package
Marking
Pin 1
Pin 2
IDH05SG60C
PG-TO220-2
D05G60C
C
A
V
DC
600
V
Q
C
6
nC
IF; TC< 130 °C
5
A
Product Summary
Rev. 2.4 page 1 2012-12-12
IDH05SG60C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 2.7 K/W
R
thJA
Thermal resistance,
junction- ambient,
leaded
- - 62
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
IR=0.05 mA, Tj=25 °C
600 - - V
Diode forward voltage
V
F
IF=5 A, Tj=25 °C
- 2.1 2.3
IF=5 A, Tj=150 °C
- 2.8 -
Reverse current
I
R
VR=600 V, Tj=25 °C
- 0.4 30 µA
VR=600 V, Tj=150 °C
- 1.5 350
AC characteristics
Total capacitive charge
Q
c
- 6 - nC
Switching time
3)
t
c
- - <10 ns
Total capacitance
C
VR=1 V, f=1 MHz
- 110 - pF
VR=300 V, f=1 MHz
- 15 -
VR=600 V, f=1 MHz
- 15 -
1)
J-STD20 and JESD22
Values
VR=400 V,IF≤I
F,max
,
diF/dt=200 A/µs,
Tj=150 °C
Thermal resistance,
junction - ambient
2)
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
5)
Only capacitive charge occuring, guaranteed by design.
3)
tc is the time constant for the capacitive displacement current waveform (independent from Tj, I
LOAD
and
di/dt), different from trr which is dependent on Tj, I
LOAD
and di/dt. No reverse recovery time constant trr due
to absence of minority carrier injection.
4)
Under worst case Zth conditions.
Rev. 2.4 page 2 2012-12-12
IDH05SG60C
1 Power dissipation 2 Diode forward current
P
tot
=f(TC); parameter: R
thJC(max)
IF=f(TC)4); Tj≤175 °C; parameter: D = tp/T
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
mode
IF=f(VF); tp=400 µs; parameter:T
j
IF=f(VF); tp=400 µs; parameter: T
j
0
10
20
30
40
50
60
25 50 75 100 125 150 175
P
tot
[W]
TC [°C]
1
0.7
0.5
0.3
0.1
0
5
10
15
20
25
30
35
25 50 75 100 125 150 175
I
F
[A]
TC [°C]
-55ºC
25ºC
100ºC
150ºC
175ºC
0
1
2
3
4
5
6
7
8
0 1 2 3 4
I
F
[A]
VF[V]
I
F
-55ºC
25ºC
100ºC
150ºC
175ºC
0
10
20
30
0 2 4 6 8 10
I
F
[A]
VF[V]
I
F
Rev. 2.4 page 3 2012-12-12
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