INFINEON IDH05G120C5 Datasheet
Industrial Power Control
Diode
Silicon Carbide Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
IDH05G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Type
VDC
IF
QC
T
j,max
Marking
Package
IDH05G120C5
1200V
5A
24nC
175°C
D0512C5
PG-TO220-2-1
CoolSiCTM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode
Pin 2 – anode
Key Performance and Package Parameters
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Table of Contents
Description .................................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum Ratings ....................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics ............................................................................................................................. 5
Electrical Characteristics Diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer ................................................................................................................................................. 11
Final Data Sheet 3 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH05G120C5
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
1200
V
Continues forward current for R
th(j-c,max)
TC = 161°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
IF
5.0
9.2
19.1
A
Surge non-repetitive forward current,
sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
I
F,SM
59
50
A
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
I
F,max
472
A
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
17.4
12.5
A²s
Diode dv/dt ruggedness
VR=0…960V
dv/dt
80
V/ns
Power dissipation
TC = 25°C
P
tot
109
W
Operating temperature
Tj
-55…175
°C
Storage temperature
T
stg
-55…150
°C
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
T
sold
260
°C
Mounting torque
M3 and M4 screws
M
0.7
Nm
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Characteristic
Diode thermal resistance,
junction – case
R
th(j-c)
-
1.06
1.37
K/W
Thermal resistance,
junction – ambient
R
th(j-a)
leaded - -
62
K/W
Maximum ratings
Thermal Resistances
Final Data Sheet 4 Rev. 2.1, 2017-07-21
Loading...