INFINEON IDH03G65C5 Datasheet

SiC

Silicon Carbide Diode

5th Generation thinQ!

650V SiC Schottky Diode

TM

IDH03G65C5

Final Datasheet

Rev. 2.2, 2012-12-10

Power Management & Multimarket

q

IDH03G65C55th Generation thinQ!™ SiC Schottky Diode

1 Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design
and thin-wafer technology. The result is a new family of products showing
improved efficiency over all load conditions, resulting from both the improved
thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
re

uirements in this voltage range.

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC
 Breakdown voltage tested at 6.8 mA
 Optimized for high temperature operation

1)

for target applications

2)

Benefits

 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability due to lower operating temperatures
 Reduced EMI

Applications

 Switch mode power supply
 Power factor correction
 Solar inverter
 Uninterruptible power supply

Table 1 Key Performance Parameters

Parameter Value Unit

VDC
QC; VR=400V 5 nC
EC; VR=400V 1.1 µJ
IF @ TC < 155°C

Table 2 Pin Definition

Pin 1 Pin 2 Pin 3

C A n.a.

Type / ordering Code Package Marking Related links

IDH03G65C5 PG-TO220-2 D0365C5 www.infineon.com/sic

650 V

3 A

1

2

1) J-STD20 and JESD22

2) All devices tested under avalanche conditions for a time periode of 10ms

Final Data Sheet 2 Rev. 2.2, 2012-12-10

5

th

Generation thinQ!TM SiC Schottky Diode

IDH03G65C5

Table of contents

Table of Contents

1 Description .......................................................................................................................................... 2

2 Maximum ratings ................................................................................................................................ 4

3 Thermal characteristics ..................................................................................................................... 4

4 Electrical characteristics ................................................................................................................... 5

5 Electrical characteristics diagrams .................................................................................................. 6

6 Simplified Forward Characteristics Model ...................................................................................... 8 

7 Package outlines ................................................................................................................................ 9

8 Revision History ............................................................................................................................... 10

Final Data Sheet 3 Rev. 2.2, 2012-12-10

5

th

Generation thinQ!TM SiC Schottky Diode

IDH03G65C5

Maximum ratings

2 Maximum ratings

Table 3 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Continuous forward current IF – –

Surge non-repetitive forward current,
sine halfwave

Non-repetitive peak forward current I

i²t value

I

– –

F,SM

– –

– –

F,max

∫ i²dt

– –

– –

Repetitive peak reverse voltage V

Diode dv/dt ruggedness

Power dissipation P

Operating and storage temperature Tj;T

Mounting torque

– –

RRM

dv/dt

– –

tot

-55 –

stg

– –

– –

3

31

29

178

4.7

4.2

650

100

42

175

70

TC < 155°C, D=1

A

TC = 25°C, tp=10 ms

TC = 150°C, tp=10 ms

TC = 25°C, tp=10 µs

A²s TC = 25°C, tp=10 ms

TC = 150°C, tp=10 ms

V Tj = 25°C

V/ns VR=0..480 V

W TC = 25°C

°C

Ncm M3 screws

3 Thermal characteristics

Table 4 Thermal characteristics TO-220-2
Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Thermal resistance, junction-case R

Thermal resistance, junction­ambient

Soldering temperature,
wavesoldering only allowed at leads

–

thJC

R

thJA

T

sold

– –

– –

2.2 3.6

K/W

62

260

°C

leaded

1.6mm (0.063 in.) from
case for 10 s

Final Data Sheet 4 Rev. 2.2, 2012-12-10