Infineon IDB30E120, IDP30E120 Data Sheet

IDP30E120

j

g

IDB30E120

Fast Switching EmCon Diode

Feature

• 1200 V EmCon technology

• Fast recovery

• Soft switching

• Low reverse recovery charge

• Low forward voltage

• Easy paralleling

Type Package Ordering Code

IDP30E120 P-TO220-2-2.

IDB30E120 P-TO220-3.SMD Q67040-S4383

Q67040-S4390

Product Summary

V

RRM

I

F

V

F

T

max

P-TO220-3.SMD P-TO220-2-2.

Marking

D30E120

Pin 1 PIN 2 PIN 3

C A -

NC C A

1200 V

30 A

1.65 V

150 °C

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Repetitive peak reverse voltage V

Continous forward current

TC=25°C

T

=90°C

C

Surge non repetitive forward current

TC=25°C, tp=10 ms, sine halfwave

Maximum repetitive forward current

TC=25°C, tp limited by T

jmax

, D=0.5

Power dissipation

TC=25°C

T

=90°C

C

I

P

Operating and storage temperature T Soldering temperature

1.6mm(0.063 in.) from case for 10s

T

RRM

F

FSM

FRM

tot

,

S

T

st

1200 V

A

50

30

102

76.5

W

138

66

-55...+150 °C

260 °C

Page 1

2003-07-31Rev.2

IDP30E120

IDB30E120

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case R

Thermal resistance, junction - ambient, leaded R

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJC

thJA

- - 0.9 K/W

- - 62

-

35

62

-

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Reverse leakage current

VR=1200V, Tj=25°C

V

=1200V, Tj=150°C

R

Forward voltage drop

IF=30A, Tj=25°C

I

V

R

-

F

-

1.65

100

2500

2.15

µA

V

I

=30A, Tj=150°C

F

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

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1.7

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2003-07-31Rev.2

IDP30E120

IDB30E120

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Reverse recovery time

VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C

V

=800V, IF=30A, diF/dt=850A/µs, Tj=125°C

R

V

=800V, IF=30A, diF/dt=850A/µs, Tj=150°C

R

Peak reverse current

VR=800V, IF = 30 A, diF/dt=850A/µs, Tj=25°C

V

=800V, IF =30A, diF/dt=850A/µs, Tj=125°C

R

V

=800V, IF =30A, diF/dt=850A/µs, Tj=150°C

R

Reverse recovery charge

VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C

V

=800V, IF =30A, diF/dt=850A/µs, Tj=125°C

R

V

=800V, IF =30A, diF/dt=850A/µs, Tj=150°C

R

Reverse recovery softness factor

VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C

V

=800V, IF=30A, diF/dt=850A/µs, Tj=125°C

R

V

=800V, IF=30A, diF/dt=850A/µs, Tj=150°C

R

t

rr

I

rrm

Q

rr

S

-

243

355

380

23.7

28.3

29.5

2630

4700

5200

-

6

7.4

7.5

ns

-

A

-

nC

-

Page 3

2003-07-31Rev.2

IDP30E120

j

IDB30E120

1 Power dissipation

P

= f (TC)

tot

parameter: T

140

W

120

110

100

tot

90

P

80

70

60

50

40

30

20

10

0

25 50 75 100

≤ 150°C

°C

T

2 Diode forward current

IF = f(TC)

parameter: Tj≤ 150°C

55

A

45

40

35

F

I

30

25

20

15

10

5

0

150

C

25 50 75 100

°C

T

150

C

3 Typ. diode forward current

IF = f (VF)

90

A

70

60

F

I

50

40

30

20

10

0

0 0.5 1 1.5 2

-55°C 25°C 100°C 150°C

V

4 Typ. diode forward voltage

VF = f (Tj)

2.4

60A

V

2

F

V

1.8

1.6

1.4

3

F

1.2

-60 -20 20 60 100

30A

15A

°C

T

160

j

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2003-07-31Rev.2

IDP30E120

IDB30E120

5 Typ. reverse recovery time

trr = f (diF/dt)

parameter: VR = 800V, Tj = 125°C

1100

ns

900

800

rr

t

700

600

500

400

300

200

200 300 400 500 600 700 800

60A 30A 15A

A/µs

diF/dt

1000

6 Typ. reverse recovery charge

Qrr=f(diF/dt)

parameter: VR= 800V, Tj = 125 °C

6500

nC

5500

rr

5000

Q

4500

4000

3500

3000

2500

200 300 400 500 600 700 800

60A

30A

15A

A/µs

diF/dt

1000

7 Typ. reverse recovery current

I

= f (diF/dt)

rr

parameter: V

35

A

25

rr

I

20

15

10

5 200 300 400 500 600 700 800

= 800V, Tj = 125°C

R

60A 30A 15A

A/µs

diF/dt

1000

8 Typ. reverse recovery softness factor

S = f(diF/dt)

parameter: V

18

14

S

12

10

8

6

4 200 300 400 500 600 700 800

= 800V, Tj = 125°C

R

60A 30A 15A

A/µs

diF/dt

1000

Page 5

2003-07-31Rev.2

9 Max. transient thermal impedance

Z

= f (tp)

thJC

parameter : D = tp/T

1

IDP30E120

10

K/W

0

10

thJC

-1

Z

10

D = 0.50

10

-2

-3

single pulse

0.20

0.10

0.05

0.02

0.01

IDP30E120

IDB30E120

10

-4

10

-7

-6

-5

-4

-3

10

-2

0

s

10

t

p

Page 6

2003-07-31Rev.2

IDP30E120

A

IDB30E120

TO-220-2-2

N

P

symbol

E

D

U

V

B

H

F

W

J

X

L

G

T

C

M

K

A 9.70 10.10 0.3819 0.3976

B 15.30 15.90 0.6024 0.6260

C 0.65 0.85 0.0256 0.0335

D 3.55 3.85 0.1398 0.1516

E 2.60 3.00 0.1024 0.1181

F 9.00 9.40 0.3543 0.3701

G 13.00 14.00 0.5118 0.5512

H 17.20 17.80 0.6772 0.7008

J 4.40 4.80 0.1732 0.1890

K 0.40 0.60 0.0157 0.0236

L

M

N

P 1.10 1.40 0.0433 0.0551

T

U

V

W

X 0.00 0.40 0.0000 0.0157

dimensions

[mm] [inch]

min ma x mi n ma x

0.41 typ.1.05 ty p.

2.54 ty p. 0.1 ty p.

4.4 typ. 0.173 typ.

2.4 typ. 0.095 typ.

0.26 typ.6.6 typ.

0.51 typ.13.0 typ.

7.5 typ. 0.295 typ.

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2003-07-31Rev.2

IDP30E120

IDB30E120

TO-220-3-45 (P-TO220SMD)

dimensions

symbol

A 9.80 10.00 0.3858 0.3937

B

C 1.25 1.75 0.0492 0.0689

D 0.95 1.15 0.0374 0.0453

E

F 0.72 0.85 0.0283 0.0335

G

H 4.30 4.50 0.1693 0.1772

K 1.28 1.40 0.0504 0.0551

L 9.00 9.40 0.3543 0.3701

M 2.30 2.50 0.0906 0.0984

N

P 0.00 0.20 0.0000 0.0079

Q 3.30 3.90 0.1299 0.1535

R

S 1.70 2.50 0.0669 0.0984

T 0.50 0.65 0.0197 0.0256

U

V

W

X

Y

Z

[mm] [inch]

min ma x min ma x

1.3 ty p. 0.0512 typ.

2.54 ty p. 0.1 ty p.

5.08 ty p. 0.2 ty p.

14.1 ty p. 0.5551 ty p.

8° max 8° max

10.8 ty p. 0.4252 ty p.

1.35 ty p. 0.0532 ty p.

6.43 ty p. 0.2532 ty p.

4.60 ty p. 0.1811 ty p.

9.40 ty p. 0.3701 ty p.

16.15 ty p. 0.6358 typ.

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2003-07-31Rev.2

IDP30E120

IDB30E120

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Page 9

2003-07-31Rev.2

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