Infineon IDB30E120, IDP30E120 Data Sheet
IDP30E120
j
j
g
IDB30E120
Fast Switching EmCon Diode
Feature
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
Type Package Ordering Code
IDP30E120 P-TO220-2-2.
IDB30E120 P-TO220-3.SMD Q67040-S4383
Q67040-S4390
Product Summary
V
RRM
I
F
V
F
T
max
P-TO220-3.SMD P-TO220-2-2.
Marking
D30E120
D30E120
Pin 1 PIN 2 PIN 3
C A -
NC C A
1200 V
30 A
1.65 V
150 °C
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage V
Continous forward current
TC=25°C
T
=90°C
C
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by T
jmax
, D=0.5
Power dissipation
TC=25°C
T
=90°C
C
I
I
I
P
Operating and storage temperature T
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
RRM
F
FSM
FRM
tot
,
S
T
st
1200 V
A
50
30
102
76.5
W
138
66
-55...+150 °C
260 °C
Page 1
2003-07-31Rev.2
IDP30E120
IDB30E120
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJC
thJA
thJA
- - 0.9 K/W
- - 62
-
-
-
35
62
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
VR=1200V, Tj=25°C
V
=1200V, Tj=150°C
R
Forward voltage drop
IF=30A, Tj=25°C
I
V
R
-
-
F
-
-
-
1.65
100
2500
2.15
µA
V
I
=30A, Tj=150°C
F
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
-
1.7
-
2003-07-31Rev.2
IDP30E120
IDB30E120
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF=30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF=30A, diF/dt=850A/µs, Tj=150°C
R
Peak reverse current
VR=800V, IF = 30 A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF =30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF =30A, diF/dt=850A/µs, Tj=150°C
R
Reverse recovery charge
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF =30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF =30A, diF/dt=850A/µs, Tj=150°C
R
Reverse recovery softness factor
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF=30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF=30A, diF/dt=850A/µs, Tj=150°C
R
t
rr
I
rrm
Q
rr
S
-
-
-
-
-
-
-
-
-
243
355
380
23.7
28.3
29.5
2630
4700
5200
-
-
-
6
7.4
7.5
ns
-
-
-
A
-
-
-
nC
-
-
-
-
-
-
Page 3
2003-07-31Rev.2
Loading...