Infineon IDB30E120, IDP30E120 Data Sheet

IDP30E120
j
j
g
IDB30E120
Fast Switching EmCon Diode
Feature
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
Type Package Ordering Code
IDP30E120 P-TO220-2-2.
IDB30E120 P-TO220-3.SMD Q67040-S4383
Q67040-S4390
Product Summary
RRM
I
F
F
T
max
P-TO220-3.SMD P-TO220-2-2.
Marking
D30E120
D30E120
Pin 1 PIN 2 PIN 3
C A -
NC C A
1200 V
30 A
1.65 V
150 °C
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage V
Continous forward current
TC=25°C
T
=90°C
C
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by T
jmax
, D=0.5
Power dissipation
TC=25°C
T
=90°C
C
I
I
I
Operating and storage temperature T Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
RRM
F
FSM
FRM
tot
,
S
T
st
1200 V
50
30
102
76.5
W
138
66
-55...+150 °C
260 °C
Page 1
2003-07-31Rev.2
IDP30E120
IDB30E120
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJC
thJA
thJA
- - 0.9 K/W
- - 62
-
-
-
35
62
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
VR=1200V, Tj=25°C
V
=1200V, Tj=150°C
R
Forward voltage drop
IF=30A, Tj=25°C
I
R
-
-
F
-
-
-
1.65
100
2500
2.15
µA
I
=30A, Tj=150°C
F
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
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1.7
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2003-07-31Rev.2
IDP30E120
IDB30E120
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF=30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF=30A, diF/dt=850A/µs, Tj=150°C
R
Peak reverse current
VR=800V, IF = 30 A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF =30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF =30A, diF/dt=850A/µs, Tj=150°C
R
Reverse recovery charge
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF =30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF =30A, diF/dt=850A/µs, Tj=150°C
R
Reverse recovery softness factor
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
V
=800V, IF=30A, diF/dt=850A/µs, Tj=125°C
R
V
=800V, IF=30A, diF/dt=850A/µs, Tj=150°C
R
t
rr
I
rrm
Q
rr
S
-
-
-
-
-
-
-
-
-
243
355
380
23.7
28.3
29.5
2630
4700
5200
-
-
-
6
7.4
7.5
ns
-
-
-
-
-
-
nC
-
-
-
-
-
-
Page 3
2003-07-31Rev.2
IDP30E120
j
IDB30E120
1 Power dissipation
= f (TC)
tot
parameter: T
140
W
120
110
100
tot
90
P
80
70
60
50
40
30
20
10
0
25 50 75 100
150°C
°C
T
2 Diode forward current
IF = f(TC)
parameter: Tj≤ 150°C
55
A
45
40
35
F
I
30
25
20
15
10
5
0
150
C
25 50 75 100
°C
T
150
C
3 Typ. diode forward current
IF = f (VF)
90
A
70
60
F
I
50
40
30
20
10
0
0 0.5 1 1.5 2
-55°C 25°C 100°C 150°C
V
V
4 Typ. diode forward voltage
VF = f (Tj)
2.4
60A
V
2
F
V
1.8
1.6
1.4
3
F
1.2
-60 -20 20 60 100
30A
15A
°C
T
160
j
Page 4
2003-07-31Rev.2
IDP30E120
IDB30E120
5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 800V, Tj = 125°C
1100
ns
900
800
rr
t
700
600
500
400
300
200
200 300 400 500 600 700 800
60A 30A 15A
A/µs
diF/dt
1000
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR= 800V, Tj = 125 °C
6500
nC
5500
rr
5000
Q
4500
4000
3500
3000
2500
200 300 400 500 600 700 800
60A
30A
15A
A/µs
diF/dt
1000
7 Typ. reverse recovery current
I
= f (diF/dt)
rr
parameter: V
35
A
25
rr
I
20
15
10
5 200 300 400 500 600 700 800
= 800V, Tj = 125°C
R
60A 30A 15A
A/µs
diF/dt
1000
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: V
18
14
S
12
10
8
6
4 200 300 400 500 600 700 800
= 800V, Tj = 125°C
R
60A 30A 15A
A/µs
diF/dt
1000
Page 5
2003-07-31Rev.2
9 Max. transient thermal impedance
Z
= f (tp)
thJC
parameter : D = tp/T
1
IDP30E120
10
K/W
0
10
thJC
-1
Z
10
D = 0.50
10
10
-2
-3
single pulse
0.20
0.10
0.05
0.02
0.01
IDP30E120
IDB30E120
10
-4
10
-7
-6
-5
-4
-3
10
10
10
10
10
-2
0
s
10
t
p
Page 6
2003-07-31Rev.2
IDP30E120
A
IDB30E120
TO-220-2-2
N
P
symbol
E
D
U
V
B
H
F
W
J
X
L
G
T
C
M
K
A 9.70 10.10 0.3819 0.3976
B 15.30 15.90 0.6024 0.6260
C 0.65 0.85 0.0256 0.0335
D 3.55 3.85 0.1398 0.1516
E 2.60 3.00 0.1024 0.1181
F 9.00 9.40 0.3543 0.3701
G 13.00 14.00 0.5118 0.5512
H 17.20 17.80 0.6772 0.7008
J 4.40 4.80 0.1732 0.1890
K 0.40 0.60 0.0157 0.0236
L
M
N
P 1.10 1.40 0.0433 0.0551
T
U
V
W
X 0.00 0.40 0.0000 0.0157
dimensions
[mm] [inch]
min ma x mi n ma x
0.41 typ.1.05 ty p.
2.54 ty p. 0.1 ty p.
4.4 typ. 0.173 typ.
2.4 typ. 0.095 typ.
0.26 typ.6.6 typ.
0.51 typ.13.0 typ.
7.5 typ. 0.295 typ.
Page 7
2003-07-31Rev.2
IDP30E120
IDB30E120
TO-220-3-45 (P-TO220SMD)
dimensions
symbol
A 9.80 10.00 0.3858 0.3937
B
C 1.25 1.75 0.0492 0.0689
D 0.95 1.15 0.0374 0.0453
E
F 0.72 0.85 0.0283 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.28 1.40 0.0504 0.0551
L 9.00 9.40 0.3543 0.3701
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 3.30 3.90 0.1299 0.1535
R
S 1.70 2.50 0.0669 0.0984
T 0.50 0.65 0.0197 0.0256
U
V
W
X
Y
Z
[mm] [inch]
min ma x min ma x
1.3 ty p. 0.0512 typ.
2.54 ty p. 0.1 ty p.
5.08 ty p. 0.2 ty p.
14.1 ty p. 0.5551 ty p.
8° max 8° max
10.8 ty p. 0.4252 ty p.
1.35 ty p. 0.0532 ty p.
6.43 ty p. 0.2532 ty p.
4.60 ty p. 0.1811 ty p.
9.40 ty p. 0.3701 ty p.
16.15 ty p. 0.6358 typ.
Page 8
2003-07-31Rev.2
IDP30E120
IDB30E120
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 9
2003-07-31Rev.2
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