Infineon FS35R12W1T4 Data Sheet

Technische Information / technical information

IGBT-modules

IGBT-Module

FS35R12W1T4

EasyPACK Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Vorläufige Daten / preliminary data

Vorläufige Daten / preliminary data

Vorläufige Daten / preliminary dataVorläufige Daten / preliminary data

V†Š» = 1200V

V†Š» = 1200V

V†Š» = 1200VV†Š» = 1200V
I† ÒÓÑ = 35A / I†ç¢ = 70A

I† ÒÓÑ = 35A / I†ç¢ = 70A

I† ÒÓÑ = 35A / I†ç¢ = 70AI† ÒÓÑ = 35A / I†ç¢ = 70A

Typische Anwendungen

Typische Anwendungen Typical Applications

Typische AnwendungenTypische Anwendungen

Klimaanlagen Airconditions

••

Motorantriebe Motor Drives

••

Servoumrichter Servo Drives

••

USV-Systeme UPS Systems

••

Typical Applications

Typical ApplicationsTypical Applications

Elektrische Eigenschaften

Elektrische Eigenschaften Electrical Features

Elektrische EigenschaftenElektrische Eigenschaften

Niedrige Schaltverluste Low Switching Losses

••

Trench IGBT 4 Trench IGBT 4

••

V†ŠÙÈÚ mit positivem Temperaturkoeffizienten V†ŠÙÈÚ with positive Temperature Coefficient

••

niedriges V†ŠÙÈÚ Low V†ŠÙÈÚ

••

Mechanische Eigenschaften

Mechanische Eigenschaften Mechanical Features

Mechanische EigenschaftenMechanische Eigenschaften

AlèOé Substrat für kleinen thermischen

••

Widerstand
Kompaktes Design Compact Design

••

Lötverbindungs Technologie Solder Contact Technology

••

Robuste Montage durch integrierte

••

Befestigungsklammern

Module Label Code

Module Label Code

Module Label CodeModule Label Code

Barcode Code 128

Barcode Code 128

Barcode Code 128Barcode Code 128

DMX - Code

DMX - Code

DMX - CodeDMX - Code

Electrical Features

Electrical FeaturesElectrical Features

Mechanical Features

Mechanical FeaturesMechanical Features

AlèOé Substrate for Low Thermal Resistance

Rugged mounting due to integrated mounting
clamps

Content of the Code

Content of the Code Digit

Content of the CodeContent of the Code

Module Serial Number 1 - 5
Module Material Number 6 - 11
Production Order Number 12 - 19
Datecode (Production Year) 20 - 21
Datecode (Production Week) 22 - 23

Digit

Digit Digit

prepared by: DK
approved by: MB

date of publication: 2009-10-30
revision: 2.1

1

material no: 29267
UL approved (E83335)

Technische Information / technical information

IGBT-modules

IGBT-Module

FS35R12W1T4

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

TÝÎ = 25°C V†Š» 1200 V

T† = 100°C, TÝÎ = 175°C
T† = 25°C, TÝÎ = 175°C

t« = 1 ms I†ç¢ 70 A

T† = 25°C, TÝÎ = 175°C PÚÓÚ 225 W

V•Š» +/-20 V

Vorläufige Daten
preliminary data

I† ÒÓÑ

I†

35
65

A
A

Charakteristische Werte / characteristic values

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Gateladung
gate charge

Interner Gatewiderstand
internal gate resistor

Eingangskapazität
input capacitance

Rückwirkungskapazität
reverse transfer capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

Gate-Emitter Reststrom
gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlussverhalten
SC data

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

I† = 35 A, V•Š = 15 V
I† = 35 A, V•Š = 15 V
I† = 35 A, V•Š = 15 V

I† = 1,20 mA, V†Š = V•Š, TÝÎ = 25°C V•ŠÚÌ 5,0 5,8 6,5 V

V•Š = -15 V ... +15 V Q• 0,27 µC

TÝÎ = 25°C R•ÍÒÚ 0,0 Â

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CÍþÙ 2,00 nF

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CØþÙ 0,07 nF

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C I†Š» 1,0 mA

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C I•Š» 400 nA

I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 12 Â

I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 12 Â

I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 12 Â

I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 12 Â

I† = 35 A, V†Š = 600 V, L» = 60 nH
V•Š = ±15 V, di/dt = 1850 A/µs (TÝÎ=150°C)
R•ÓÒ = 12 Â

I† = 35 A, V†Š = 600 V, L» = 60 nH
V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=150°C)
R•ÓËË = 12 Â

V•Š ù 15 V, V†† = 800 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

pro IGBT / per IGBT RÚÌœ† 0,60 0,66 K/W

pro IGBT / per IGBT
р«ИЩЪю = 1 W/(m·K) / рГШюИЩю = 1 W/(m·K)

t« ù 10 µs,

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 150°C

min. typ. max.

2,25 V

V†Š ÙÈÚ

tÁ ÓÒ

tØ

tÁ ÓËË

tË

EÓÒ

EÓËË

IȠ

RÚ̆™ 0,75 K/W

1,85
2,15
2,25

0,025
0,025
0,025

0,028
0,031
0,032

0,24
0,30

0,315

0,115
0,185
0,205

2,55
3,60
3,90

2,05
3,05
3,35

130

µsµs

µsµs

µsµs

µsµs

mJmJ

mJ

mJmJ

mJ

V
V

µs

µs

µs

µs

A

prepared by: DK
approved by: MB

date of publication: 2009-10-30
revision: 2.1

2

Technische Information / technical information

IGBT-modules

min.

typ.

max.

IGBT-Module

FS35R12W1T4

Diode-Wechselrichter / diode-inverter

Höchstzulässige Werte / maximum rated values

Periodische Spitzensperrspannung
repetitive peak reverse voltage

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forward current

Grenzlastintegral
I²t - value

Charakteristische Werte / characteristic values

Durchlassspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

TÝÎ = 25°C Vçç¢ 1200 V

IΠ35 A

t« = 1 ms IŒç¢ 70 A

Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C

IŒ = 35 A, V•Š = 0 V
IŒ = 35 A, V•Š = 0 V
IŒ = 35 A, V•Š = 0 V

IŒ = 35 A, - diŒ/dt = 1850 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V

IŒ = 35 A, - diŒ/dt = 1850 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V

IŒ = 35 A, - diŒ/dt = 1850 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V

pro Diode / per diode RÚÌœ† 0,80 0,90 K/W

pro Diode / per diode
р«ИЩЪю = 1 W/(m·K) / рГШюИЩю = 1 W/(m·K)

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C

Vorläufige Daten
preliminary data

I²t

VŒ

Iç¢

QØ

EØþÊ

RÚ̆™ 0,82 K/W

250
220

1,65

1,65
1,65

60,0
66,0
70,0

3,50
5,60
6,40

1,35
2,30
2,60

A²s
A²s

2,15 V

AA

µCµC

mJmJ

V
V

A

µC

mJ

NTC-Widerstand / NTC-thermistor

Charakteristische Werte / characteristic values

Nennwiderstand
rated resistance

Abweichung von Ræåå
deviation of Ræåå

Verlustleistung
power dissipation

B-Wert
B-value

B-Wert
B-value

B-Wert
B-value

Angaben gemäß gültiger Application Note.
Specification according to the valid application note.

T† = 25°C Rèë 5,00 kÂ

T† = 100°C, Ræåå = 493 Â ÆR/R -5 5%

T† = 25°C Pèë 20,0 mW

Rи = Rил exp [Bилхле(1/Tи - 1/(298,15 K))] Bилхле 3375 K

Rи = Rил exp [Bилхое(1/Tи - 1/(298,15 K))] Bилхое 3411 K

Rи = Rил exp [Bилхжее(1/Tи - 1/(298,15 K))] Bилхжее 3433 K

min. typ. max.

prepared by: DK
approved by: MB

date of publication: 2009-10-30
revision: 2.1

3