Infineon FP15R12KS4C Data Sheet

Technische Information / Technical Information

Periodischer Spitzenstrom

Periodischer Spitzenstrom

IGBT-Module
IGBT-Modules

FP15R12KS4C

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Diode Gleichrichter/ Diode Rectifier

Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage

Durchlaßstrom Grenzeffektivwert
RMS forward current per chip

Dauergleichstrom
DC forward current

Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

TC = 80°C I
tP = 10 ms, T

tP = 10 ms, T
tP = 10 ms, T
tP = 10 ms, T

= 25°C I

vj

= 150°C

vj

= 25°C

vj

= 150°C

vj

Tc = 80 °C
TC = 25 °C I

tP = 1 ms, TC =

TC = 25°C P

80 °C

V

RRM

I

FRMSM

FSM

I2t

V

CES

I

C,nom.

I

CRM

V

GES

1600 V

40 A

d

15 A

300 A
230 A
450
260

A2s
A2s

1200 V

15 A

C

30 A
30 A

tot

180 W

+/- 20V V

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom
DC forward current

repetitive peak forw. current
Grenzlastintegral

I2t - value

Tc = 80 °C

tP = 1 ms I

VR = 0V, tp = 10ms, Tvj = 125°C

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

TC = 80 °C I
TC = 25 °C I

tP = 1 ms, TC = 80°C I

TC = 25°C P

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Diode Brems-Chopper/ Diode Brake-Chopper

Dauergleichstrom
DC forward current

repetitive peak forw. current

Tc = 80 °C

tP = 1 ms I

I

FRM

I2t

V

CES

C,nom.

CRM

V

GES

I

FRM

F

15 A

30 A

125

A2s

1200 V

10 A

C

20 A
20 A

tot

100 W

+/- 20V V

F

10 A

20 A

prepared by: A.Schulz date of publication: 2001-11-28
approved by: M.Hierholzer revision: 2

1/11

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Technische Information / Technical Information

Gate-Emitter Reststrom

IGBT-Module
IGBT-Modules

Modul Isolation/ Module Isolation

Isolations-Prüfspannung
insulation test voltage

FP15R12KS4C

RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Diode Gleichrichter/ Diode Rectifier

Durchlaßspannung
forward voltage

Schleusenspannung
threshold voltage

Ersatzwiderstand
slope resistance

Sperrstrom
reverse current

Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

Tvj = 150°C, IF =

Tvj = 150°C V

Tvj = 150°C r

Tvj = 150°C, VR =

TC = 25°C R

VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =

VCE = VGE, Tvj = 25°C, IC =
f = 1MHz, Tvj = 25°C

VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =

V

ISOL

2,5 kV

min. typ. max.

15 A

1600 V

V

F

(TO)

T

I

R

AA'+CC'

- 0,95 - V

- - 0,8 V

- - 10,5

- 2 - mA

- 8 -

mΩ

mΩ

min. typ. max.

15 A
15 A - 3,85 - V

0,6 mA

1200 V

V

V

CE sat

GE(TO)

C

ies

I

CES

- 3,2 3,7 V

4,5 5,5 6,5 V

- 1,0 - nF

mA--

5

gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

VCE = 0V, VGE =20V, Tvj =25°C I
IC = I

, VCC =

Nenn

VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I

, VCC =

Nenn

VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I

, VCC =

Nenn

VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I

, VCC =

Nenn

VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I

, VCC =

Nenn

VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = I

, VCC =

Nenn

VGE = ±15V, Tvj = 125°C, RG =
LS =
tP ≤ 10µs, VGE ≤ 15V, RG =
Tvj≤125°C, V

CC

600 V
47 Ohm
47 Ohm - 60 - ns
600 V
47 Ohm
47 Ohm - 50 - ns
600 V
47 Ohm
47 Ohm - 400 - ns
600 V
47 Ohm
47 Ohm - 60 - ns
600 V
47 Ohm
75 nH
600 V
47 Ohm
75 nH
47 Ohm

=

720 V

dI/dt = 1200 A/µs

t

t

GES

d,off

E

E

I

d,on

t

t

SC

- - 400 nA

- 60 - ns

r

- 50 - ns

- 340 - ns

- 50 - ns

f

on

off

- 2 - mWs

- 1 - mWs

- 90 - A

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Technische Information / Technical Information

Gate-Emitter Reststrom

IGBT-Module
IGBT-Modules

FP15R12KS4C

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Modulinduktivität
stray inductance module

Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip

Diode Wechselrichter/ Diode Inverter

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

TC = 25°C R

VGE = 0V, Tvj = 25°C, IF =
VGE = 0V, Tvj = 125°C, IF =
IF=I

, - diF/dt =

Nenn

VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=I

, - diF/dt =

Nenn

VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=I

, - diF/dt =

Nenn

VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =

VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =

VCE = VGE, Tvj = 25°C, IC =
f = 1MHz, Tvj = 25°C

VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
VGE = 0V, Tvj = 125°C, VCE =

min. typ. max.

L

σCE

CC'+EE'

- - 100 nH

- 11 -

mΩ

min. typ. max.

15 A
15 A - 1,6 - V
1000A/µs
600 V
600 V - 25 - A
1000A/µs
600 V
600 V - 3,2 - µAs
1000A/µs
600 V
600 V - 1,2 - mWs

V

I

RM

Q

E

RQ

- 1,75 2,1 V

F

- 22 - A

- 1,6 - µAs

r

- 0,5 - mWs

min. typ. max.

10,0 A
10,0 A - 2,75 - V

0,35mA

1200 V
1200 V - 0,8 - mA

V

V

CE sat

GE(TO)

C

ies

I

CES

- 2,4 2,85 V

4,5 5,5 6,5 V

- 0,6 - nF

- 0,5 500 µA

gate-emitter leakage current
Schaltverluste und -bedingungen

Switching losses and conditions

Diode Brems-Chopper/ Diode Brake-Chopper

Durchlaßspannung
forward voltage

Schaltverluste und -bedingungen
Switching losses and conditions

NTC-Widerstand/ NTC-Thermistor

Nennwiderstand
rated resistance

Abweichung von R
deviation of R

100

100

Verlustleistung
power dissipation

B-Wert
B-value

VCE = 0V, VGE = 20V, Tvj = 25°C I

siehe Datenblatt (Wechselrichter)
see datasheet (inverter)

Tvj = 25°C, IF =
Tvj = 125°C, IF =

siehe Datenblatt (Wechselrichter)
see datasheet (inverter)

BSM10GP120

10,0 A
10,0 A - 2,1 - V

BSM10GP120

TC = 25°C R

TC = 100°C, R

= 493 Ω

100

∆R/R

TC = 25°C P

R2 = R1 exp [B(1/T2 - 1/T1)] B

GES

- - 300 nA

min. typ. max.

V

- 2,2 2,55 V

F

min. typ. max.

25

25

25/50

- 5 -

-5 5 %

kΩ

20 mW

3375 K

3/11

DB-PIM-S_IGBT_V2.xls

2001-11-28

Technische Information / Technical Information

Höchstzulässige Sperrschichttemperatur

Lagertemperatur

Innere Isolation

IGBT-Module
IGBT-Modules

FP15R12KS4C

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode
thermal resistance, case to heatsink

maximum junction temperature
Betriebstemperatur

operation temperature

storage temperature

Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter - - 0,7 K/W
Diode Wechsr./ Diode Inverter - - 1,2 K/W
Trans. Bremse/ Trans. Brake - - 1,2 K/W
Diode Bremse/ Diode Brake - - 2,3 K/W

Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter - 0,08 - K/W

Mechanische Eigenschaften / Mechanical properties

λ
λ

Paste

grease

=1W/m*K

=1W/m*K

R

R

T

T

min. typ. max.

thJC

thCK

vj max

vj op

T

stg

- - 1 K/W

- 0,08 - K/W

- 0,04 - K/W

- - 150 °C

-40 - 125 °C

-40 - 125 °C

internal insulation
CTI

comperative tracking index
Anzugsdrehmoment f. mech. Befestigung

mounting torque
Gewicht

weight

Al2O

225

M 3 Nm

±10%

G 180 g

3

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2001-11-28