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FP15R12KE3G
Data Sheet
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Infineon FP15R12KE3G Data Sheet

Technische Information / Technical Information
Vorläufige Daten
Preliminary data
Periodischer Spitzenstrom
Periodischer Spitzenstrom
IGBT-Module IGBT-Modules
FP15R12KE3G
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage
Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output
Dauergleichstrom DC forward current
Stoßstrom Grenzwert surge forward current Grenzlastintegral I2t - value
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung total power dissipation
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
TC = 80°C I tP = 10 ms, T
tP = 10 ms, T tP = 10 ms, T tP = 10 ms, T
= 25°C I
vj
= 150°C
vj
= 25°C
vj
= 150°C
vj
Tc = 80 °C TC = 25 °C I
tP = 1 ms, TC =
TC = 25°C P
80 °C
V
RRM
I
RMSmax
FSM
I2t
V
CES
I
C,nom.
I
CRM
V
GES
1600 V
60 A
d
15 A
315 A 260 A 500 340
A2s A2s
1200 V
15 A
C
25 A 30 A
tot
100 W
+/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom DC forward current
repetitive peak forw. current Grenzlastintegral
I2t - value
Tc = 80 °C
tP = 1 ms I
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung total power dissipation
TC = 80 °C I TC = 25 °C I
tP = 1 ms, TC = 80°C I
TC = 25°C P
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom DC forward current
repetitive peak forw. current
Tc = 80 °C
tP = 1 ms I
I
FRM
I2t
V
CES
C,nom.
CRM
V
GES
I
FRM
F
15 A
30 A
60
A2s
1200 V
10 A
C
18 A 20 A
tot
80 W
+/- 20V V
F
10 A
20 A
prepared by: Andreas Schulz date of publication:10.08.2001 approved by: Robert Severin revision: 1
1(11)
DB-PIM-IGBT3_1.xls
Technische Information / Technical Information
=
Gate-Emitter Reststrom
IGBT-Module IGBT-Modules
Modul Isolation/ Module Isolation
Isolations-Prüfspannung insulation test voltage
FP15R12KE3G
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung forward voltage
Schleusenspannung threshold voltage
Ersatzwiderstand slope resistance
Sperrstrom reverse current
Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
Eingangskapazität input capacitance
Kollektor-Emitter Reststrom collector-emitter cut off current
Tvj = 150°C, IF =
Tvj = 150°C V
Tvj = 150°C r
Tvj = 150°C, V
TC = 25°C R
VGE = 15V, Tvj = 25°C, IC = VGE = 15V, Tvj = 125°C, IC =
VCE = VGE, Tvj = 25°C, IC = f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25°C, VCE =
Vorläufige Daten Preliminary data
V
ISOL
min. typ. max.
V
F
(TO)
T
I
R
AA'+CC'
R
15 A
1600 V
min. typ. max.
15 A 15 A - 2 - V
0,5 mA
1200 V
V
V
CE sat
GE(TO)
C
ies
I
CES
5,0 5,8 6,5 V
2,5 kV
- 0,95 - V
- - 0,8 V
- - 10,5
- 2 - mA
- 5 -
- 1,7 2,2 V
- 1,1 - nF
- - 5 mA
mΩ
mΩ
gate-emitter leakage current Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last) rise time (inductive load)
Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load)
Fallzeit (induktive Last) fall time (inductive load)
Einschaltverlustenergie pro Puls turn-on energy loss per pulse
Abschaltverlustenergie pro Puls turn-off energy loss per pulse
Kurzschlußverhalten SC Data
VCE = 0V, VGE =20V, Tvj =25°C I IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG = VGE = ±15V, Tvj = 125°C, RG = IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG = VGE = ±15V, Tvj = 125°C, RG = IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG = VGE = ±15V, Tvj = 125°C, RG = IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG = VGE = ±15V, Tvj = 125°C, RG = IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 125°C, RG = LS = IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 125°C, RG = LS = tP ≤ 10µs, VGE ≤ 15V, RG = Tvj≤125°C, V
600 V 75 Ohm 75 Ohm - 90 - ns 600 V 75 Ohm 75 Ohm - 45 - ns 600 V 75 Ohm 75 Ohm - 520 - ns 600 V 75 Ohm 75 Ohm - 90 - ns 600 V 75 Ohm 45 nH 600 V 75 Ohm 45 nH 75 Ohm
=
720 V
CC
t
t
GES
d,off
E
E
I
d,on
t
SC
- - 400 nA
- 85 - ns
r
- 30 - ns
- 420 - ns
t
on
off
- 65 - ns
f
- 2,1 - mWs
- 1,5 - mWs
- 60 - A
2(11)
DB-PIM-IGBT3_1.xls
Technische Information / Technical Information
Gate-Emitter Reststrom
IGBT-Module IGBT-Modules
FP15R12KE3G
Charakteristische Werte / Characteristic values
Modulinduktivität stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung forward voltage
Rückstromspitze peak reverse recovery current
Sperrverzögerungsladung recovered charge
Abschaltenergie pro Puls reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
Eingangskapazität input capacitance
Kollektor-Emitter Reststrom collector-emitter cut off current
TC = 25°C R
VGE = 0V, Tvj = 25°C, IF = VGE = 0V, Tvj = 125°C, IF = IF=I
, - diF/dt =
Nenn
VGE = -10V, Tvj = 25°C, VR = VGE = -10V, Tvj = 125°C, VR = IF=I
, - diF/dt =
Nenn
VGE = -10V, Tvj = 25°C, VR = VGE = -10V, Tvj = 125°C, VR = IF=I
, - diF/dt =
Nenn
VGE = -10V, Tvj = 25°C, VR = VGE = -10V, Tvj = 125°C, VR =
VGE = 15V, Tvj = 25°C, IC = VGE = 15V, Tvj = 125°C, IC =
VCE = VGE, Tvj = 25°C, IC = f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25°C, VCE =
Vorläufige Daten Preliminary data
min. typ. max.
L
σCE
CC'+EE'
15 A
V 15 A - 1,65 - V 400 A/µs 600 V
I
RM
600 V - 15 - A 400 A/µs 600 V
Q 600 V - 3 - µAs 400 A/µs 600 V
E
600 V - 1,1 - mWs
10 A
V
CE sat
10 A - 2,25 - V 0,3 mA
V
GE(TO)
C
1200 V
I
CES
- - 100 nH
- 7 -
min. typ. max.
- 1,65 2,2 V
F
- 16 - A
- 1,8 - µAs
r
RQ
- 0,55 - mWs
min. typ. max.
- 1,85 2,5 V
5,0 5,8 6,5 V
ies
- 0,6 - nF
- 5,0 - mA
mΩ
gate-emitter leakage current Schaltverluste und -bedingungen
Switching losses and conditions
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung forward voltage
Schaltverluste und -bedingungen Switching losses and conditions
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand rated resistance
Abweichung von R deviation of R
100
100
Verlustleistung power dissipation
B-Wert B-value
VCE = 0V, VGE = 20V, Tvj = 25°C I
siehe Wechselrichter in Dbl FP10R12KE3 see inverter in datasheet FP10R12KE3
Tvj = 25°C, IF = Tvj = 125°C, IF =
10 A 10 A - 1,85 - V
siehe Wechselrichter in Dbl FB10R12KE3 see inverter in datasheet FB10R12KE3
TC = 25°C R
TC = 100°C, R
= 493 Ω
100
∆R/R
TC = 25°C P
R2 = R1 exp [B(1/T2 - 1/T1)] B
GES
- - 400 nA
min. typ. max.
V
- 1,8 2,5 V
F
min. typ. max.
25
25
25/50
- 5 -
-5 5 %
kΩ
20 mW
3375 K
3(11)
DB-PIM-IGBT3_1.xls
Technische Information / Technical Information
Höchstzulässige Sperrschichttemperatur
Lagertemperatur
Innere Isolation
IGBT-Module IGBT-Modules
FP15R12KE3G
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode thermal resistance, case to heatsink
maximum junction temperature Betriebstemperatur
operation temperature
storage temperature
Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter - - 1,2 K/W Diode Wechsr./ Diode Inverter - - 1,5 K/W Trans. Bremse/ Trans. Brake - - 1,5 K/W Diode Bremse/ Diode Brake - - 2,3 K/W
λ
Paste
Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter - 0,08 - K/W
λ
grease
Mechanische Eigenschaften / Mechanical properties
=1W/m*K
=1W/m*K
Vorläufige Daten Preliminary data
min. typ. max.
R
thJC
R
thCK
T
T
op
T
stg
- - 1 K/W
- 0,08 - K/W
- 0,04 - K/W
- - 150 °C
vj
-40 - 125 °C
-40 - 125 °C
internal insulation CTI
comperative tracking index Anzugsdrehmoment f. mech. Befestigung
mounting torque Gewicht
weight
Al2O
225
M 3 Nm
±10%
G 180 g
3
4(11)
DB-PIM-IGBT3_1.xls
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