Infineon FP10R12W1T4_B29 Data Sheet

Technische Information / technical information

IGBT-modules

IGBT-Module

FP10R12W1T4

EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Vorläufige Daten / preliminary data

Vorläufige Daten / preliminary dataVorläufige Daten / preliminary data

V†Š» = 1200V

V†Š» = 1200VV†Š» = 1200V I† ÒÓÑ = 10A / I†ç¢ = 20A

I† ÒÓÑ = 10A / I†ç¢ = 20A

I† ÒÓÑ = 10A / I†ç¢ = 20AI† ÒÓÑ = 10A / I†ç¢ = 20A

Typische Anwendungen

Typische Anwendungen Typical Applications

Typische AnwendungenTypische Anwendungen

Hilfsumrichter Auxiliary Inverters

••

Klimaanlagen Airconditions

••

Motorantriebe Motor Drives

••

Typical Applications

Typical ApplicationsTypical Applications

Elektrische Eigenschaften

Elektrische Eigenschaften Electrical Features

Elektrische EigenschaftenElektrische Eigenschaften

Niedrige Schaltverluste Low Switching Losses

••

Trench IGBT 4 Trench IGBT 4

••

V†ŠÙÈÚ mit positivem Temperaturkoeffizienten V†ŠÙÈÚ with positive Temperature Coefficient

••

niedriges V†ŠÙÈÚ Low V†ŠÙÈÚ

••

Mechanische Eigenschaften

Mechanische Eigenschaften Mechanical Features

Mechanische EigenschaftenMechanische Eigenschaften

AlèOé Substrat für kleinen thermischen

••

Widerstand Kompaktes Design Compact Design

••

Lötverbindungs Technologie Solder Contact Technology

••

Robuste Montage durch integrierte

••

Befestigungsklammern

Module Label Code

Module Label CodeModule Label Code

Barcode Code 128

Barcode Code 128Barcode Code 128

DMX - Code

DMX - CodeDMX - Code

Electrical Features

Electrical FeaturesElectrical Features

Mechanical Features

Mechanical FeaturesMechanical Features

AlèOé Substrate for Low Thermal Resistance

Rugged mounting due to integrated mounting clamps

Content of the Code

Content of the Code Digit

Content of the CodeContent of the Code

Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23

Digit

Digit Digit

prepared by: DK approved by: MB

date of publication: 2009-10-30 revision: 2.1

material no: 29256 UL approved (E83335)

Technische Information / technical information

IGBT-modules

IGBT-Module

FP10R12W1T4

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung collector-emitter voltage

Kollektor-Dauergleichstrom DC-collector current

Periodischer Kollektor Spitzenstrom repetitive peak collector current

Gesamt-Verlustleistung total power dissipation

Gate-Emitter-Spitzenspannung gate-emitter peak voltage

TÝÎ = 25°C V†Š» 1200 V

T† = 100°C, TÝÎ = 175°C T† = 25°C, TÝÎ = 175°C

t« = 1 ms I†ç¢ 20 A

T† = 25°C, TÝÎ = 175°C PÚÓÚ 105 W

V•Š» +/-20 V

Vorläufige Daten preliminary data

I† ÒÓÑ

I†

10 20

A A

Charakteristische Werte / characteristic values

Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage

Gate-Schwellenspannung gate threshold voltage

Gateladung gate charge

Interner Gatewiderstand internal gate resistor

Eingangskapazität input capacitance

Rückwirkungskapazität reverse transfer capacitance

Kollektor-Emitter Reststrom collector-emitter cut-off current

Gate-Emitter Reststrom gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last) turn-on delay time (inductive load)

Anstiegszeit (induktive Last) rise time (inductive load)

Abschaltverzögerungszeit (ind. Last) turn-off delay time (inductive load)

Fallzeit (induktive Last) fall time (inductive load)

Einschaltverlustenergie pro Puls turn-on energy loss per pulse

Abschaltverlustenergie pro Puls turn-off energy loss per pulse

Kurzschlussverhalten SC data

Innerer Wärmewiderstand thermal resistance, junction to case

Übergangs-Wärmewiderstand thermal resistance, case to heatsink

I† = 10 A, V•Š = 15 V I† = 10 A, V•Š = 15 V I† = 10 A, V•Š = 15 V

I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C V•ŠÚÌ 5,2 5,8 6,4 V

V•Š = -15 V ... +15 V Q• 0,09 µC

TÝÎ = 25°C R•ÍÒÚ 0,0 Â

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CÍþÙ 0,60 nF

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CØþÙ 0,024 nF

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C I†Š» 1,0 mA

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C I•Š» 400 nA

I† = 10 A, V†Š = 600 V V•Š = ±15 V R•ÓÒ = 47 Â

I† = 10 A, V†Š = 600 V V•Š = ±15 V R•ÓËË = 47 Â

I† = 10 A, V†Š = 600 V, L» = 50 nH V•Š = ±15 V, di/dt = 500 A/µs (TÝÎ=150°C) R•ÓÒ = 47 Â

I† = 10 A, V†Š = 600 V, L» = 50 nH V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=150°C) R•ÓËË = 47 Â

V•Š ù 15 V, V†† = 800 V V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

pro IGBT / per IGBT RÚÌœ† 1,25 1,40 K/W

pro IGBT / per IGBT р«ИЩЪю = 1 W/(m·K) / рГШюИЩю = 1 W/(m·K)

t« ù 10 µs,

TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C

TÝÎ = 150°C

min. typ. max.

2,25 V

V†Š ÙÈÚ

tÁ ÓÒ

tØ

tÁ ÓËË

tË

EÓÒ

EÓËË

I»†

RÚÌ†™ 1,15 K/W

1,85 2,15 2,25

0,045 0,045 0,045

0,044 0,061 0,063

0,18 0,245 0,275

0,165 0,215 0,225

0,90

1,35

1,55

0,55

0,80

0,87

µsµs

mJmJ

V V

µs

prepared by: DK approved by: MB

date of publication: 2009-10-30 revision: 2.1

Technische Information / technical information

IGBT-modules

min.

typ.

max.

IGBT-Module

FP10R12W1T4

Diode-Wechselrichter / diode-inverter

Höchstzulässige Werte / maximum rated values

Periodische Spitzensperrspannung repetitive peak reverse voltage

Dauergleichstrom DC forward current

Periodischer Spitzenstrom repetitive peak forward current

Grenzlastintegral I²t - value

Charakteristische Werte / characteristic values

Durchlassspannung forward voltage

Rückstromspitze peak reverse recovery current

Sperrverzögerungsladung recovered charge

Abschaltenergie pro Puls reverse recovery energy

Innerer Wärmewiderstand thermal resistance, junction to case

Übergangs-Wärmewiderstand thermal resistance, case to heatsink

TÝÎ = 25°C Vçç¢ 1200 V

IŒ 10 A

t« = 1 ms IŒç¢ 20 A

Vç = 0 V, t« = 10 ms, TÝÎ = 125°C Vç = 0 V, t« = 10 ms, TÝÎ = 150°C

IŒ = 10 A, V•Š = 0 V IŒ = 10 A, V•Š = 0 V IŒ = 10 A, V•Š = 0 V

IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C) Vç = 600 V V•Š = -15 V

pro Diode / per diode RÚÌœ† 1,75 1,90 K/W

pro Diode / per diode р«ИЩЪю = 1 W/(m·K) / рГШюИЩю = 1 W/(m·K)

TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C

Vorläufige Daten preliminary data

I²t

VŒ

Iç¢

QØ

EØþÊ

RÚÌ†™ 1,30 K/W

16,0

14,0

1,75

12,0

10,0

8,00

0,90

1,70

1,90

0,24

0,52

0,59

A²s A²s

2,25 V

µCµC

mJmJ

V V

µC

Diode-Gleichrichter / diode-rectifier

Höchstzulässige Werte / maximum rated values

Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage

Durchlassstrom Grenzeffektivwert pro Dio. forward current RMS maximum per diode

Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output

Stoßstrom Grenzwert surge forward current

Grenzlastintegral I²t - value

Charakteristische Werte / characteristic values

Durchlassspannung forward voltage

Sperrstrom reverse current

Innerer Wärmewiderstand thermal resistance, junction to case

Übergangs-Wärmewiderstand thermal resistance, case to heatsink

TÝÎ = 25°C Vçç¢ 1600 V

T† = 80°C IŒç¢»¢ 30 A

T† = 80°C Iç¢»¢ 30 A

tÔ = 10 ms, TÝÎ = 25°C tÔ = 10 ms, TÝÎ = 150°C

TÝÎ = 150°C, IŒ = 10 A VŒ 0,80 V

TÝÎ = 150°C, Vç = 1600 V Iç 1,00 mA

pro Diode per diode

pro Diode / per diode р«ИЩЪю = 1 W/(m·K) / рГШюИЩю = 1 W/(m·K)

IŒ»¢

I²t

RÚÌœ† 1,20 1,35 K/W

RÚÌ†™ 1,15 K/W

300 245

450 300

min. typ. max.

A A

A²s A²s

prepared by: DK approved by: MB

date of publication: 2009-10-30 revision: 2.1

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