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FP10R12KE3
Data Sheet
13 pgs233.74 Kb0

Infineon FP10R12KE3 Data Sheet

Technische Information / Technical Information
V
g
y
IGBT-Module IGBT-Modules
FP10R12KE3
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output
Stoßstrom Grenzwert surge forward current Grenzlastintegral
2
I
t - value
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung total power dissipation
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom DC forward current
Periodischer Spitzenstrom repetitive peak forw. current
Grenzlastintegral
2
t - value
I
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung total power dissipation
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom DC forward current
Periodischer Spitzenstrom repetitive peak forw. current
Tvj =25°C V
T
=80°C I
C
T
=80°C I
C
t
= 10 ms, T
P
t
= 10 ms, T
P
t
= 10 ms, T
P
= 10 ms, T
t
P
=25°C V
T
vj
T
= 80°C I
C
= 25 °C I
T
C
t
= 1 ms, TC =80°C I
P
T
= 25°C P
C
t
= 1 ms I
P
= 0V, tp = 10ms, Tvj = 125°C
V
R
=25°C V
T
vj
T
= 80 °C I
C
= 25 °C I
T
C
= 1 ms, TC = 80°C I
t
P
= 25°C P
T
C
t
= 1 ms I
P
= 25°C I
vj
= 150°C
vj
= 25°C
vj
= 150°C
vj
RRM
FRMSM
RMSmax
FSM
2
I
t
CES
C,nom.
C
CRM
tot
V
GES
I
F
FRM
2
I
t
CES
C,nom.
C
CRM
tot
V
GES
I
F
FRM
orläufi
1600 V
25 A
36 A
196 A 158 A 192 125
1200 V
10 A 15 A
20 A
55 W
+/- 20V V
10 A
20 A
20
1200 V
10 A 15 A
20 A
55 W
+/- 20V V
10 A
20 A
A2s A
A2s
2
s
prepared by: Thomas Passe date of publication: 2002-02-14
approved by: Ingo Graf revision: 6
1(12)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
Modul Isolation/ Module Isolation
Isolations-Prüfspannung insulation test voltage
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung forward voltage
Schleusenspannung threshold voltage
Ersatzwiderstand slope resistance
Sperrstrom reverse current
Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
Eingangskapazität input capacitance
Kollektor-Emitter Reststrom collector-emitter cut-off current
Gate-Emitter Reststrom gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load)
Anstiegszeit (induktive Last) rise time (inductive load)
Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load)
Fallzeit (induktive Last) fall time (inductive load)
Einschaltverlustenergie pro Puls turn-on energy loss per pulse
Abschaltverlustenergie pro Puls turn-off energy loss per pulse
Kurzschlußverhalten SC Data
FP10R12KE3
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
T
= 150°C, IF =
vj
T
= 150°C V
vj
T
= 150°C r
vj
T
= 150°C, VR =
vj
T
= 25°C R
C
V
= 15V, Tvj = 25°C, IC =
GE
= 15V, Tvj = 125°C, IC =
V
GE
V
= VGE, Tvj = 25°C, IC =
CE
f = 1MHz, T V
CE
V
GE
V
CE
I
= I
C
V
GE
V
GE
I
= I
C
V
GE
V
GE
I
= I
C
V
GE
V
GE
I
= I
C
V
GE
V
GE
I
= I
C
V
GE
= 25°C
vj
= 25 V, VGE = 0 V
= 0V, Tvj =125°C, VCE =
= 0V, VGE =20V, Tvj =25°C I
, VCC =
Nenn
= ±15V, Tvj = 25°C, RG = = ±15V, Tvj = 125°C, RG =
, VCC =
Nenn
= ±15V, Tvj = 25°C, RG = = ±15V, Tvj = 125°C, RG =
, VCC =
Nenn
= ±15V, Tvj = 25°C, RG = = ±15V, Tvj = 125°C, RG =
, VCC =
Nenn
= ±15V, Tvj = 25°C, RG = = ±15V, Tvj = 125°C, RG =
, VCC =
Nenn
= ±15V, Tvj = 125°C, RG = L I
= I
, VCC =
C
Nenn
= ±15V, Tvj = 125°C, RG =
V
GE
L t
£ 10µs, VGE £ 15V, RG =
P
T
£125°C, V
vj
10 A
1600 V
10 A 10 A - 2,3 - V
0,3mA
1200V
600 V 100 Ohm 100 Ohm - 50 - ns 600 V 100 Ohm 100 Ohm - 30 - ns 600 V 100 Ohm 100 Ohm - 391 - ns 600 V 100 Ohm 100 Ohm - 90 - ns 600 V 100 Ohm
=
80 nH
S
600 V 100 Ohm
=
80 nH
S
100 Ohm
=
720 V
CC
Vorläufig Preliminary
V
ISOL
min. typ. max.
V
F
(TO)
T
I
R
AA'+CC'
min. typ. max.
V
CE sat
V
4,5 5,5 6,5 V
GE(TO)
C
ies
I
CES
GES
t
d,on
t
r
t
d,off
t
f
E
on
E
off
I
SC
2,5 kV
- 0,95 - V
- 0,78 V
-17
mW
-5-mA
- 11 - mW
- 1,9 2,45 V
- 0,6 - nF
- 5,0
-mA
- - 400 nA
-52-ns
-20-ns
- 292 - ns
-65-ns
- 1,42 - mWs
- 1,22 - mWs
-40- A
2(12)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung forward voltage
Rückstromspitze peak reverse recovery current
Sperrverzögerungsladung recovered charge
Abschaltenergie pro Puls reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
Eingangskapazität input capacitance
Kollektor-Emitter Reststrom - 5,0 - mA collector-emitter cut-off current
Gate-Emitter Reststrom gate-emitter leakage current
FP10R12KE3
= 25°C R
T
C
V
= 0V, Tvj = 25°C, IF =
GE
= 0V, Tvj = 125°C, IF =
V
GE
I
, - diF/dt =
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
I
, - diF/dt =
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
I
, - diF/dt =
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
V
= 15V, Tvj = 25°C, IC =
GE
= 15V, Tvj = 125°C, IC =
V
GE
V
= VGE, Tvj = 25°C, IC =
CE
f = 1MHz, T V
CE
V
GE
V
CE
= 25°C
vj
= 25 V, VGE = 0 V
= 0V, Tvj = 125°C, VCE =
= 0V, VGE = 20V, Tvj = 25°C I
10 A 10 A - 1,7 - V 550 A/us 600 V 600 V - 15 - A 550 A/us 600 V 600 V - 1,8 - µAs 550 A/us 600 V 600 V - 0,56 - mWs
10,0 A 10,0 A - 2,3 - V
0,3mA
1200V
Vorläufig Preliminary
min. typ. max.
L
sCE
CC'+EE'
min. typ. max.
V
F
I
RM
Q
r
E
rec
min. typ. max.
V
CE sat
V
4,5 5,5 6,5 V
GE(TO)
C
ies
GES
- - 40 nH
- 14 - mW
- 1,7 2,1 V
-14- A
- 1 - µAs
- 0,26 - mWs
- 1,9 2,45 V
- 0,6 - nF
- - 400 nA
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung forward voltage
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand rated resistance
Abweichung von R deviation of R
100
100
Verlustleistung power dissipation
B-Wert B-value
T
= 25°C, IF =
vj
= 125°C, IF =
T
vj
= 25°C R
T
C
TC = 100°C, R
T
= 25°C P
C
R
= R1 exp [B(1/T2 - 1/T1)] B
2
= 493 W
100
10,0 A 10,0 A - 1,85 - V
3(12)
min. typ. max.
V
- 1,8 2,3 V
F
min. typ. max.
-5-
25
DR/R
-5 5 %
25
25/50
kW
20 mW
3375 K
Technische Information / Technical Information
g
g
IGBT-Module IGBT-Modules
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to heatsink
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode thermal resistance, junction to case
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode l thermal resistance, case to heatsink
Höchstzulässi maximum junction temperature
Betriebstemperatur operation temperature
La
ertemperatur
storage temperature
e Sperrschichttemperatur
FP10R12KE3
Gleichr. Diode/ Rectif. Diode l
Trans. Wechsr./ Trans. Inverter l
Diode Wechsr./ Diode Inverter - 3,7 - K/W
Trans. Bremse/ Trans. Brake - 2,6 - K/W
Diode Bremse/ Diode Brake - 4,0 - K/W
Trans. Wechsr./ Trans. Inverter - - 2,2 K/W
Diode Wechsr./ Diode Inverter - - 2,7 K/W Trans. Bremse/ Trans. Brake - - 2,2 K/W Diode Bremse/ Diode Brake - - 2,9 K/W
Trans. Wechsr./ Trans. Inverter l
Diode Wechsr./ Diode Inverter - 1,3 - K/W Trans. Bremse/ Trans. Brake - 0,6 - K/W Diode Bremse/ Diode Brake - 1,4 - K/W
=1W/m*K
Paste
=1W/m*K - 2,6 - K/W
grease
=1W/m*K
Paste
=1W/m*K - 0,6 - K/W
grease
Vorläufig Preliminary
min. typ. max.
R
R
R
thCH
T
T
T
- 1,9 - K/W
thJH
- - 1,9 K/W
thJC
- 0,2 - K/W
- - 150 °C
vj
-40 - 125 °C
op
-40 - 125 °C
stg
Mechanische Eigenschaften / Mechanical properties
Innere Isolation internal insulation
CTI comperative tracking index
Anpreßkraft f. mech. Befestigung pro Feder F N mounting force per clamp
Gewicht weight
Kontakt - Kühlkörper terminal to heatsink
Terminal - Terminal terminal to terminal
Kriechstrecke creeping distance
Luftstrecke clearance
Kriechstrecke creeping distance
Luftstrecke clearance
G36g
Al
2O3
225
40...80
13,5 mm
12 mm
7,5 mm
7,5 mm
4(12)
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