Infineon FF200R17KE3-S4 Data Sheet
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 200 R17 KE3
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Tvj = 25°C V
TC = 80 °C I
TC = 25 °C I
tP = 1 ms, TC = 80°C I
TC=25°C, Transistor P
tp = 1 ms
vorläufige Daten
preliminary data
CES
C,nom.
C
CRM
tot
V
GES
I
F
I
FRM
1.700 V
1250 W
+/- 20V V
200 A
390 A
400 A
200 A
400 A
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
= 200A, VGE = 15V, Tvj = 25°C V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
C
= 200A, VGE = 15V, Tvj = 125°C
I
C
= 8mA, VCE = VGE, Tvj = 25°C V
I
C
V
= -15V ... +15V Q
GE
f = 1MHz,T
= 25°C,VCE = 25V, VGE = 0V C
vj
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V C
VCE = 1700V, VGE = 0V, Tvj = 25°C I
VCE = 0V, VGE = 20V, Tvj = 25°C I
V
CE sat
GE(th)
CES
GES
2
t
I
ISOL
min. typ. max.
- 2,0 2,45 V
- 2,4 - V
5,2 5,8 6,4 V
- 1,2 - µC
G
ies
res
-17-nF
- 0,6 - nF
- -5mA
- - 400 nA
5,4
k A2s
3,4 kV
prepared by: Alfons Wiesenthal date of publication: 2002-07-15
approved by: Christoph Lübke; 2002-07-15 revision: 2.0
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DB_FF200R17KE3_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 200 R17 KE3
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
=200A, VCE = 900V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
C
VGE = ±15V, RG = 6,8W, Tvj = 25°C t
= ±15V, RG = 6,8W, Tvj = 125°C
V
GE
I
= 200A, VCE = 900V
C
VGE = ±15V, RG = 6,8W, Tvj = 25°C t
= ±15V, RG = 6,8W, Tvj = 125°C
V
GE
I
= 200A, VCE = 900V
C
VGE = ±15V, RG = 6,8W, Tvj = 25°C t
= ±15V, RG = 6,8W, Tvj = 125°C
V
GE
I
= 200A, VCE = 900V
C
VGE = ±15V, RG = 6,8W, Tvj = 25°C t
= ±15V, RG = 6,8W, Tvj = 125°C
V
GE
I
= 200A, VCE = 900V, VGE = ±15V
C
RG = 6,8W, Tvj = 125°C, Ls = 60nH E
I
=200A, VCE = 900V, VGE = ±15V
C
RG = 6,8W, Tvj = 125°C, Ls = 60nH E
t
£ 10µsec, VGE £ 15V
P
TVj£125°C, VCC=1000V, V
Anschlüsse / terminals: 2 - 3
CEmax=VCES -LsCE
·di/dt I
vorläufige Daten
preliminary data
min. typ. max.
d,on
r
d,off
f
on
off
SC
L
sCE
- 0,25 - µs
- 0,30 - µs
- 0,10 - µs
- 0,10 - µs
- 0,85 - µs
- 1,00 - µs
- 0,12 - µs
- 0,20 - µs
-80-mJ
-65-mJ
- 740 - A
- 20 - nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
TC=25°C, pro Zweig / per arm R
Charakteristische Werte / Characteristic values
Diode / Diode
I
= 200A, VGE = 0V, Tvj = 25°C V
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
F
I
= 200A, VGE = 0V, Tvj = 125°C
F
IF = 200A, - diF/dt = 2600A/µs
VR = 900V, VGE = -15V, Tvj = 25°C I
= 900V, VGE = -15V, Tvj = 125°C
V
R
I
= 200A, - diF/dt = 2600A/µs
F
VR = 900V, VGE = -15V, Tvj = 25°C Q
= 900V, VGE = -15V, Tvj = 125°C
V
R
I
= 200A, - diF/dt = 2600A/µs
F
VR = 900V, VGE = -15V, Tvj = 25°C E
= 900V, VGE = -15V, Tvj = 125°C
V
R
CC´+EE´
F
RM
r
rec
- 0,60 - mW
min. typ. max.
- 1,8 2,2 V
- 1,9 - V
- 220 - A
- 230 - A
-50-µC
-85-µC
-25-mJ
-50-mJ
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DB_FF200R17KE3_2.0.xls
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