Infineon FD400R65KF1-K Data Sheet
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
FD 400 R 65 KF1-K
=125°C
T
vj
T
=25°C
vj
T
=-40°C
vj
T
= 80 °C I
C
T
= 25 °C I
C
t
= 1 ms, TC = 80°C I
P
V
CES
C,nom.
CRM
6500
6300
V
5800
400 A
C
800 A
800 A
Gesamt-Verlustleistung
total power dissipation
T
=25°C, Transistor P
C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I
t - value, Diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs Aussetzspannung
partial discharge extinction voltage
= 1 ms I
t
P
= 0V, tp = 10ms, Tvj = 125°C
V
R
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, Q
typ. 10pC (acc. To IEC 1287) V
PD
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
= 400A, VGE = 15V, Tvj = 25°C V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
C
I
= 400A, VGE = 15V, Tvj = 125°C
C
I
= 70mA, VCE = VGE, Tvj = 25°C V
C
= -15V ... +15V Q
V
GE
tot
V
GES
I
F
FRM
2
I
t
V
ISOL
ISOL
min. typ. max.
CE sat
GE(th)
- 4,3 4,9 V
- 5,3 5,9 V
6,4 7,0 8,1 V
- 5,6 - µC
G
7,4 kW
+/- 20V V
400 A
800 A
87
k A2s
10,2 kV
5,1 kV
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,T
V
CE
V
CE
V
CE
= 25°C,VCE = 25V, VGE = 0V C
vj
= 6300V, VGE = 0V, Tvj = 25°C
= 6500V, VGE = 0V, Tvj = 125°C
= 0V, VGE = 20V, Tvj = 25°C I
prepared by: Dr. Oliver Schilling date of publication: 2002-08-30
approved by: Dr. Schütze 2002-08-30 revision/Status: Series 1
1
-56-nF
ies
I
CES
GES
0,4
40
- - 400 nA
mA
mA
FD 400 R65 KF1-K (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
FD 400 R 65 KF1-K
= 400A, VCE = 3600V
I
C
= ±15V, R
V
GE
= ±15V, R
V
GE
= 400A, VCE = 3600V
I
C
= ±15V, R
V
GE
= ±15V, R
V
GE
= 400A, VCE = 3600V
I
C
V
= ±15V, R
GE
= ±15V, R
V
GE
= 400A, VCE = 3600V
I
C
= ±15V, R
V
GE
VGE = ±15V, R
= 400A, VCE = 3600V, VGE = ±15V
I
C
= 6,2Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH
R
Gon
= 400A, VCE = 3600V, VGE = ±15V
I
C
= 36Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH
R
Goff
≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05
t
P
T
≤125°C, VCC=4400V, V
Vj
Zweig 1+2 / arm 1+2
Zweig 3 / arm 3
= 6,2Ω, CGE=44nF, Tvj = 25°C,
Gon
= 6,2Ω, CGE=44nF, Tvj = 125°C,
Gon
= 6,2Ω, CGE=44nF, Tvj = 25°C,
Gon
= 6,2Ω, CGE=44nF, Tvj = 125°C,
Gon
= 36Ω, CGE=44nF, Tvj = 25°C,
Goff
= 36Ω, CGE=44F, Tvj = 125°C,
Goff
= 36Ω, CGE=44nF, Tvj = 25°C,
Goff
= 36Ω, CGE=44F, Tvj = 125°C,
Goff
CEmax=VCES -LσCE
·di/dt
min. typ. max.
t
d,on
t
t
d,off
t
E
E
I
SC
L
sCE
- 0,75 - µs
- 0,72 - µs
- 0,37 - µs
r
- 0,40 - µs
- 5,50 - µs
- 6,00 - µs
- 0,40 - µs
f
- 0,50 - µs
- 4000 - mJ
on
- 2300 - mJ
off
- 2000 - A
-
20
- nH
25
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Zweig 1+2 / arm 1+2
Zweig 3 / arm 3
I
= 400A, VGE = 0V, Tvj = 25°C V
F
I
= 400A, VGE = 0V, Tvj = 125°C
F
IF = 400A, - diF/dt = 1400A/µs
= 3600V, VGE = -10V, Tvj = 25°C I
V
R
= 3600V, VGE = -10V, Tvj = 125°C
V
R
= 400A, - diF/dt = 1400A/µs
I
F
= 3600V, VGE = -10V, Tvj = 25°C Q
V
R
= 3600V, VGE = -10V, Tvj = 125°C
V
R
= 400A, - diF/dt = 1400A/µs
I
F
= 3600V, VGE = -10V, Tvj = 25°C E
V
R
= 3600V, VGE = -10V, Tvj = 125°C
V
R
R
CC´+EE´
-
min. typ. max.
3,0 3,8 4,6 V
F
RM
- 540 - A
- 660 - A
- 360 - µC
r
- 700 - µC
- 440 - mJ
rec
- 1050 - mJ
0,18
0,37
-
3,9 4,7 V
mΩ
2
FD 400 R65 KF1-K (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
FD 400 R 65 KF1-K
Transistor / transistor, DC
Diode/Diode, DC - - 0,032 K/W
pro Modul / per Module
λ
≤ 1 W/m*K / λ
Paste
≤ 1 W/m*K
grease
min. typ. max.
R
thJC
R
thCK
T
vj, max
- - 0,017 K/W
- 0,006 - K/W
- - 150 °C
Betriebstemperatur Sperrschicht
junction operation temperature
Lagertemperatur
storage temperature
Schaltvorgänge IGBT(RBSOA);Diode(SOA)
switching operation IGBT(RBSOA);Diode(SOA)
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
Schraube /screw M6 M 5 Nm
Anschlüsse / terminals M4 2 Nm
Anschlüsse / terminals M8 8 - 10 Nm
T
T
-40 - 125 °C
vj,op
-40 - 125 °C
stg
AlN
56 mm
26 mm
>600
M
G 1400 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
FD 400 R65 KF1-K (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch) IC = f (VCE)
Output characteristic (typical)
800
FD 400 R 65 KF1-K
VGE = 15V
700
600
500
[A]
C
I
400
300
200
100
0
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0
25°C
125°C
VCE [V]
Ausgangskennlinienfeld (typisch) IC = f (VCE), VGE= < see inset >
Output characteristic (typical)
800
Tvj = 125°C
700
600
500
[A]
C
I
400
300
200
100
0
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0
20V
15V
12V
10V
VCE [V]
4
FD 400 R65 KF1-K (final 1).xls
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