Infineon FB20R06KL4-B1 Data Sheet

Technische Information / technical information

V

g

IGBT-Module
IGBT-Modules

FB20R06KL4B1

Elektrische Eigenschaften / electrical properties

Höchstzulässige Werte / maximum rated values

Diode Gleichrichter/ diode rectifier

Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage

Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip

Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output

Stoßstrom Grenzwert
surge forward current
Grenzlastintegral

2

I

t - value

Transistor Wechselrichter/transistor inverter

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Diode Wechselrichter/ diode inverter

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

Grenzlastintegral

2

t - value

I

Transistor Brems-Chopper/ transistor brake-chopper

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Diode Brems-Chopper/ diode brake-chopper

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

T

=25°C V

vj

T

=80°C I

C

T

=80°C I

C

= 10 ms, T

t

P

t

= 10 ms, T

P

t

= 10 ms, T

P

t

= 10 ms, T

P

=25°C V

T

vj

= 65°C I

T

C

T

= 25 °C I

C

t

= 1 ms, Tc=65°C I

P

T

= 25°C P

C

t

= 1 ms I

P

= 0V, tp = 10ms, Tvj = 125°C

V

R

T

=25°C V

vj

= 65 °C I

T

C

T

= 25 °C I

C

t

= 1 ms, Tc=65°C I

P

= 25°C I

vj

= 150°C

vj

= 25°C

vj

= 150°C

vj

TC = 25°C P

t

= 1 ms I

P

RRM

FRMSM

RMSmax

FSM

2

t

I

CES

C,nom.

C

CRM

tot

V

GES

I

F

FRM

2

t

I

CES

C,nom.

C

CRM

tot

V

GES

I

F

FRM

orläufi

preliminary

800 V

58 A

50 A

448 A
358 A

1000

642

600 V

20 A
25 A

40 A

78 W

+/- 20V V

20 A

40 A

62

600 V

20 A
25 A

40 A

78 W

+/- 20V V

20 A

40 A

A2s
A

A2s

2

s

prepared by: Thomas Passe date of publication: 2003-03-26

approved by: R. Keggenhoff revision: 2.1

1(12)

Technische Information / technical information

IGBT-Module
IGBT-Modules

Modul Isolation/ module isolation

Isolations-Prüfspannung
insulation test voltage

Elektrische Eigenschaften / electrical properties

Charakteristische Werte / characteristic values

Diode Gleichrichter/ diode rectifier

Durchlaßspannung
forward voltage

Schleusenspannung
threshold voltage

Ersatzwiderstand
slope resistance

Sperrstrom
reverse current

Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip

FB20R06KL4B1

RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate

T

= 150°C, IF =

vj

T

= 150°C V

vj

T

= 150°C r

vj

T

= 150°C, VR =

vj

T

= 25°C R

C

20 A

800 V

Vorläufig
preliminary

V

ISOL

min. typ. max.

V

- 0,85 - V

F

- 0,63 - V

(TO)

-10-mΩ

T

I

-5-mA

R

AA'+CC'

- 11 - mΩ

2,5 kV

Transistor Wechselrichter/ transistor inverter

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

Gate-Emitter Reststrom
gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

= 15V, Tvj = 25°C, IC =

V

GE

V

= 15V, Tvj = 125°C, IC =

GE

V

= VGE, Tvj = 25°C, IC =

CE

f = 1MHz, T
V

CE

V

CE

= I

I

C

V

GE

V

GE

I

= I

C

V

GE

V

GE

I

= I

C

V

GE

V

GE

I

= I

C

V

GE

V

GE

I

= I

C

V

GE

= 25°C

vj

= 25 V, VGE = 0 V

= 0V, Tvj =25°C, VCE =I

V

GE

= 0V, VGE =20V, Tvj =25°C I

, VCC =

Nenn

= ±15V, Tvj = 25°C, RG =
= ±15V, Tvj = 125°C, RG =

, VCC =

Nenn

= ±15V, Tvj = 25°C, RG =
= ±15V, Tvj = 125°C, RG =

, VCC =

Nenn

= ±15V, Tvj = 25°C, RG =
= ±15V, Tvj = 125°C, RG =

, VCC =

Nenn

= ±15V, Tvj = 25°C, RG =
= ±15V, Tvj = 125°C, RG =

, VCC =

Nenn

= ±15V, Tvj = 125°C, RG =
L
I

= I

, VCC =

C

Nenn

V

= ±15V, Tvj = 125°C, RG =

GE

L
t

≤ 10µs, VGE ≤ 15V, RG =

P

T

≤125°C, V

vj

20 A
20 A - 2,2 - V

0,5mA

300 V
47 Ohm
47 Ohm - 31 - ns
300 V
47 Ohm
47 Ohm - 37 - ns
300 V
47 Ohm
47 Ohm - 154 - ns
300 V
47 Ohm
47 Ohm - 38 - ns
300 V
47 Ohm

=

80 nH

S

300 V
47 Ohm

=

80 nH

S

47 Ohm

=

360 V

CC

V

V

CE sat

GE(TO)

C

ies

CES

GES

t

d,on

t

r

t

d,off

t

f

E

on

E

off

I

SC

min. typ. max.

- 1,95 2,55 V

4,5 5,5 6,5 V

- 1,1 - nF

5,0-600V -

mA

- - 400 nA

-22-ns

-23-ns

- 143 - ns

-22-ns

- 0,7 - mJ

- 0,6 - mJ

-90- A

2(12)

Technische Information / technical information

IGBT-Module
IGBT-Modules

Elektrische Eigenschaften / electrical properties

Charakteristische Werte / characteristic values

Modulinduktivität
stray inductance module

Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip

FB20R06KL4B1

T

= 25°C R

C

Vorläufig
preliminary

min. typ. max.

L

CC'+EE'

- - 40 nH

σCE

- 10 - mΩ

Diode Wechselrichter/ diode inverter

= 0V, Tvj = 25°C, IF =

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

V

GE

V

= 0V, Tvj = 125°C, IF =

GE

I

, - diF/dt =

F=INenn

V

= -10V, Tvj = 25°C, VR =

GE

= -10V, Tvj = 125°C, VR =

V

GE

I

, - diF/dt =

F=INenn

V

= -10V, Tvj = 25°C, VR =

GE

V

= -10V, Tvj = 125°C, VR =

GE

I

, - diF/dt =

F=INenn

V

= -10V, Tvj = 25°C, VR =

GE

= -10V, Tvj = 125°C, VR =

V

GE

Transistor Brems-Chopper/ transistor brake-chopper

= 15V, Tvj = 25°C, IC =

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Kollektor-Emitter Reststrom
collector-emitter cut-off current

Gate-Emitter Reststrom
gate-emitter leakage current

V

GE

= 15V, Tvj = 125°C, IC =

V

GE

V

= VGE, Tvj = 25°C, IC =

CE

f = 1MHz, T

= 25 V, VGE = 0 V

V

CE

= 0V, Tvj = 25°C, VCE =

V

GE

V

= 0V, VGE = 20V, Tvj = 25°C I

CE

Diode Brems-Chopper/ diode brake-chopper

= 25°C, IF =

Durchlaßspannung
forward voltage

T

vj

T

= 125°C, IF =

vj

= 25°C

vj

min. typ. max.

20 A
20 A - 1,7 - V
1000 A/us
300 V
300 V - 23 - A
1000 A/us
300 V
300 V - 1,7 - µAs
1000 A/us
300 V
300 V - 0,35 - mJ

V

- 1,7 2,15 V

F

I

E

-20- A

RM

Q

- 1 - µAs

r

- 0,2 - mJ

rec

min. typ. max.

20,0 A
20,0 A - 2,2 - V

0,5mA

600V

V

V

CE sat

GE(TO)

C

- 1,95 2,55 V

4,5 5,5 6,5 V

- 1,1 - nF

ies

- - 400 nA

GES

5,0 mA--

min. typ. max.

20A
20A - 2,55 - V

V

- 2,45 2,9 V

F

NTC-Widerstand/ NTC-thermistor

Nennwiderstand
rated resistance

Abweichung von R
deviation of R

100

100

Verlustleistung
power dissipation

B-Wert
B-value

T

= 25°C R

C

TC = 100°C, R

T

= 25°C P

C

= R1 exp [B(1/T2 - 1/T1)] B

R

2

= 493 Ω

100

3(12)

min. typ. max.

-5-kΩ

25

∆R/R -5 5 %

25

25/50

20 mW

3375 K

Technische Information / technical information

IGBT-Module
IGBT-Modules

Thermische Eigenschaften / thermal properties

Innerer Wärmewiderstand
thermal resistance, junction to heatsink

Innerer Wärmewiderstand Gleichr. Diode/ rectif. diode
thermal resistance, junction to case

Übergangs-Wärmewiderstand Gleichr. Diode/ rectif. diode λ
thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur
maximum junction temperature

Betriebstemperatur
operation temperature

Lagertemperatur
storage temperature

FB20R06KL4B1

Gleichr. Diode/ rectif. diode λ
Trans. Wechselr./ trans. inverter λ

Diode Wechselr./ diode inverter - 3,7 - K/W

Trans. Bremse/ trans. brake - 1,8 - K/W

Diode Bremse/ diode brake - 4,3 - K/W

Trans. Wechselr./ trans. inverter - - 1,6 K/W

Diode Wechselr./ diode inverter - - 2,7 K/W
Trans. Bremse/ trans. brake - - 1,6 K/W
Diode Bremse/ diode brake - - 3,1 K/W

Trans. Wechselr./ trans. inverter λ

Diode Wechselr./ diode inverter - 1,3 - K/W
Trans. Bremse/ trans. brake - 0,4 - K/W
Diode Bremse/ diode brake - 1,5 - K/W

=1W/m*K

Paste

=1W/m*K - 1,8 - K/W

grease

=1W/m*K

Paste

=1W/m*K - 0,4 - K/W

grease

Vorläufig
preliminary

min. typ. max.

R

R

R

T

T

- 1,1 - K/W

thJH

- - 1 K/W

thJC

- 0,2 - K/W

thCH

T

- - 150 °C

vj

-40 - 125 °C

op

-40 - 125 °C

stg

Mechanische Eigenschaften / mechanical properties

Innere Isolation
internal insulation

CTI
comperative tracking index

Anpreßkraft f. mech. Befestigung F N
mounting force

Gewicht
weight

Kontakt - Kühlkörper
terminal to heatsink

Terminal - Terminal
terminal to terminal

Kriechstrecke
creepage distance

Luftstrecke
clearance distance

Kriechstrecke
creepage distance

Luftstrecke
clearance distance

G36g

Al

2O3

225

40...80

13,5 mm

12 mm

7,5 mm

7,5 mm

4(12)