Infineon FB20R06KL4 Data Sheet
Technische Information / Technical Information
V
g
IGBT-Module
IGBT-Modules
FB20R06KL4
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
2
I
t - value
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
2
t - value
I
T
=25°C V
vj
T
=80°C I
C
T
=80°C I
C
= 10 ms, T
t
P
tP = 10 ms, T
t
= 10 ms, T
P
t
= 10 ms, T
P
=25°C V
T
vj
= 65°C I
T
C
= 25°C I
vj
= 150°C
vj
= 25°C
vj
= 150°C
vj
TC = 25 °C I
t
= 1 ms, TC =65°C I
P
T
= 25°C P
C
t
= 1 ms I
P
= 0V, tp = 10ms, Tvj = 125°C
V
R
Preliminary
RRM
FRMSM
RMSmax
FSM
2
t
I
CES
C,nom.
C
CRM
tot
V
GES
I
F
FRM
2
t
I
orläufi
800 V
58 A
96 A
448 A
358 A
1000
642
600 V
20 A
25 A
40 A
80 W
+/- 20V V
20 A
40 A
62
A2s
A
A2s
2
s
prepared by: Thomas Passe date of publication: 2002-02-27
approved by: Ingo Graf revision: 5
1(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
FB20R06KL4
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
T
= 150°C, IF=
vj
T
= 150°C V
vj
T
= 150°C r
vj
T
= 150°C, VR=
vj
T
= 25°C R
C
= 15V, Tvj = 25°C, IC =
V
GE
VGE = 15V, Tvj = 125°C, IC =
V
= VGE, Tvj = 25°C, IC =
CE
f = 1MHz, T
V
CE
V
CE
= I
I
C
V
GE
= 25°C
vj
= 25 V, VGE = 0 V
= 0V, VGE =20V, Tvj =25°C I
, VCC=
Nenn
= ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
I
= I
, VCC=
C
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
VGE = ±15V, Tvj = 125°C, RG =
I
= I
, VCC=
C
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
= ±15V, Tvj = 125°C, RG =
V
GE
I
= I
, VCC =
C
Nenn
V
= ±15V, Tvj = 25°C, RG =
GE
VGE = ±15V, Tvj = 125°C, RG =
I
= I
, VCC =
C
Nenn
V
= ±15V, Tvj = 125°C, RG =
GE
LS =
I
= I
, VCC=
C
Nenn
V
= ±15V, Tvj = 125°C, RG =
GE
LS =
t
£ 10µs, VGE £ 15V, RG =
P
T
£125°C, V
vj
20 A
800 V
20 A
20 A - 2,2 - V
0,5mA
300 V
47 Ohm
47 Ohm - 31 - ns
300 V
47 Ohm
47 Ohm - 37 - ns
300 V
47 Ohm
47 Ohm - 154 - ns
300 V
47 Ohm
47 Ohm - 38 - ns
300 V
47 Ohm
80 nH
300 V
47 Ohm
80 nH
47 Ohm
=
360 V
CC
Vorläufig
Preliminary
V
ISOL
min. typ. max.
V
F
(TO)
T
I
R
AA'+CC'
min. typ. max.
V
CE sat
V
4,5 5,5 6,5 V
GE(TO)
C
ies
I
CES
GES
t
d,on
t
r
t
d,off
t
f
E
on
E
off
I
SC
2,5 kV
- 0,85 - V
- 0,63 - V
-10-mW
-5-mA
- 4 - mW
- 1,95 2,55 V
- 1,1 - nF
- 5,0VGE = 0V, Tvj = 125°C, VCE = 600V
-mA
- - 400 nA
-22-ns
-23-ns
- 143 - ns
-22-ns
- 0,73 - mWs
- 0,56 - mWs
-80- A
2(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
FB20R06KL4
T
= 25°C R
C
= 0V, Tvj = 25°C, IF =
V
GE
VGE = 0V, Tvj = 125°C, IF =
I
, - diF/dt =
F=INenn
V
= -10V, Tvj = 25°C, VR =
GE
V
= -10V, Tvj = 125°C, VR =
GE
I
, - diF/dt =
F=INenn
V
= -10V, Tvj = 25°C, VR =
GE
VGE = -10V, Tvj = 125°C, VR =
I
, - diF/dt =
F=INenn
V
= -10V, Tvj = 25°C, VR =
GE
VGE = -10V, Tvj = 125°C, VR =
20 A
20 A - 1,7 - V
1000 A/us
300 V
300 V - 23 - A
1000 A/us
300 V
300 V - 1,7 - µAs
1000 A/us
300 V
300 V - 0,35 - mWs
Vorläufig
Preliminary
min. typ. max.
L
CC'+EE'
- - 40 nH
sCE
- 13 - mW
min. typ. max.
V
- 1,7 2,15 V
F
I
E
-20- A
RM
Q
- 1 - µAs
r
- 0,2 - mWs
rec
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
Abweichung von R
deviation of R
100
100
Verlustleistung
power dissipation
B-Wert
B-value
T
= 25°C R
C
TC = 100°C, R
T
= 25°C P
C
= R1 exp [B(1/T2 - 1/T1)] B
R
2
= 493 W
100
min. typ. max.
-5-kW
25
DR/R -5 5 %
20 mW
25/50
25
3375 K
3(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to heatsink
FB20R06KL4
Gleichr. Diode/ Rectif. Diode l
Trans. Wechsr./ Trans. Inverter l
Diode Wechsr./ Diode Inverter - 3,7 - K/W
=1W/m*K
Paste
=1W/m*K - 1,8 - K/W
grease
Vorläufig
Preliminary
min. typ. max.
R
- 1,1 - K/W
thJH
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode
thermal resistance, junction to case
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode l
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Trans. Wechsr./ Trans. Inverter - - 1,6 K/W
Diode Wechsr./ Diode Inverter - - 2,7 K/W
Trans. Wechsr./ Trans. Inverter l
Diode Wechsr./ Diode Inverter - 1,3 - K/W
=1W/m*K
Paste
=1W/m*K - 0,4 - K/W
grease
R
R
T
T
- - 1 K/W
thJC
- 0,2 - K/W
thCH
T
- - 150 °C
vj
-40 - 125 °C
op
-40 - 125 °C
stg
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
CTI
comperative tracking index
Anpreßkraft f. mech. Befestigung pro Feder F N
mounting force per clamp
Gewicht
weight
Kontakt - Kühlkörper
terminal to heatsink
Terminal - Terminal
terminal to terminal
Kriechstrecke
creeping distance
Luftstrecke
clearance
Kriechstrecke
creeping distance
Luftstrecke
clearance
G36g
Al
2O3
225
40...80
13,5 mm
12 mm
7,5 mm
7,5 mm
4(11)
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