Infineon FB10R06KL4G-B1 Data Sheet
Technische Information / technical information
V
g
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Elektrische Eigenschaften /electrical properties
Höchstzulässige Werte /maximum rated values
Diode Gleichrichter / diode rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
=25°C V
T
vj
orläufi
preliminary
RRM
800 V
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
2
t - value
I
Transistor Wechselrichter / transistor inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter / diode inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
2
t - value
I
=80°C I
T
C
=80°C I
T
C
= 10 ms, T
t
P
= 10 ms, T
t
P
= 10 ms, T
t
P
t
= 10 ms, T
P
=25°C V
T
vj
=80°C I
T
C
= 25 °C I
T
C
= 1 ms, TC =80°C I
t
P
= 25°C P
T
C
= 1 ms I
t
P
= 0V, tp = 10ms, Tvj = 125°C
V
R
= 25°C I
vj
= 150°C
vj
= 25°C
vj
= 150°C
vj
FRMSM
RMSmax
FSM
2
t
I
CES
C,nom.
C
CRM
tot
V
GES
I
F
FRM
2
t
I
23 A
25 A
197 A
158 A
194
125
A2s
A
600 V
10 A
15 A
20 A
55 W
+/- 20V V
10 A
20 A
12
A2s
2
s
Transistor Brems-Chopper / transistor brake-chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
=25°C V
T
vj
=80 °C I
T
C
= 25 °C I
T
C
= 1 ms, Tc=80°C I
t
P
= 25°C P
T
C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper / diode brake-chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
= 1 ms I
t
P
prepared by: Thomas Passe date of publication: 2003-03-26
approved by: R. Keggenhoff revision: 2.1
1(12)
CES
C,nom.
CRM
V
GES
I
FRM
600 V
10 A
C
15 A
20 A
tot
55 W
+/- 20V V
F
10 A
20 A
Technische Information / technical information
IGBT-Module
IGBT-Modules
Modul Isolation / module isolation
Isolations-Prüfspannung
insulation test voltage
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Diode Gleichrichter / diode rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
FB10R06KL4GB1
RMS, f = 50 Hz, t = 1 min.
NTC connected to baseplate
= 150°C, IF =
T
vj
T
= 150°C V
vj
= 150°C r
T
vj
= 150°C, VR =
T
vj
10 A
800 V
Vorläufig
preliminary
V
ISOL
min. typ. max.
V
(TO)
I
R
- 0,9 - V
F
- 0,67 - V
-21-
T
-5-mA
2,5 kV
mΩ
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter / transistor inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten t
SC Data
T
= 25°C R
C
V
= 15V, Tvj = 25°C, IC =
GE
= 15V, Tvj = 125°C, IC =
V
GE
= VGE, Tvj = 25°C, IC =
V
CE
f = 1MHz, T
= 25 V, VGE = 0 V
V
CE
V
GE
= 0V, VGE =20V, Tvj =25°C I
V
CE
I
= I
C
= ±15V, Tvj = 25°C, RG =
V
GE
= ±15V, Tvj = 125°C, RG =
V
GE
= I
I
C
= ±15V, Tvj = 25°C, RG =
V
GE
= ±15V, Tvj = 125°C, RG =
V
GE
= I
I
C
= ±15V, Tvj = 25°C, RG =
V
GE
= ±15V, Tvj = 125°C, RG =
V
GE
I
= I
C
= ±15V, Tvj = 25°C, RG =
V
GE
= ±15V, Tvj = 125°C, RG =
V
GE
= I
I
C
= ±15V, Tvj = 125°C, RG =
V
GE
= 25°C
vj
= 0V, Tvj =25°C, VCE =
, VCC =
Nenn
, VCC =
Nenn
, VCC =
Nenn
, VCC =
Nenn
, VCC =
Nenn
L
= I
, VCC =
I
C
Nenn
= ±15V, Tvj = 125°C, RG =
V
GE
L
≤ 10µs, VGE ≤ 15V, RG =
P
≤125°C, V
T
vj
10 A
10 A - 2,2 - V
0,35mA
600V mA
300 V
82 Ohm
82 Ohm - 30 - ns
300 V
82 Ohm
82 Ohm - 28 - ns
300 V
82 Ohm
82 Ohm - 230 - ns
300 V
82 Ohm
82 Ohm - 30 - ns
300 V
82 Ohm
=
80 nH
S
300 V
82 Ohm
=
80 nH
S
82 Ohm
=
360 V
CC
dI/dt = 400 A/µs
AA'+CC'
V
CE sat
V
GE(TO)
C
I
t
t
E
E
I
- 11 -
min. typ. max.
- 1,95 2,55 V
4,5 5,5 6,5 V
ies
CES
GES
d,on
t
d,off
t
on
off
SC
- 0,8 - nF
- 5,0-
- - 400 nA
-32-ns
-26-ns
r
- 234 - ns
-10-ns
f
- 0,36 - mJ
- 0,44 - mJ
-40- A
mΩ
2(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
FB10R06KL4GB1
= 25°C R
T
C
Vorläufig
preliminary
min. typ. max.
L
σCE
CC'+EE'
- - 40 nH
- 10 -
mΩ
Diode Wechselrichter / diode inverter
V
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
= 0V, Tvj = 25°C, IF =
GE
= 0V, Tvj = 125°C, IF =
V
GE
, - diF/dt =
I
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
, - diF/dt =
I
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
, - diF/dt =
I
F=INenn
= -10V, Tvj = 25°C, VR =
V
GE
= -10V, Tvj = 125°C, VR =
V
GE
Transistor Brems-Chopper / transistor brake-chopper
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
= 15V, Tvj = 25°C, IC =
GE
= 15V, Tvj = 125°C, IC =
V
GE
= VGE, Tvj = 25°C, IC =
V
CE
f = 1MHz, T
= 25 V, VGE = 0 V
V
CE
V
= 0V, Tvj = 25°C, VCE =
GE
= 0V, VGE = 20V, Tvj = 25°C I
V
CE
= 25°C
vj
min. typ. max.
10 A
10 A - 1,9 - V
600 A/us
300 V
300 V - 12 - A
600 A/us
300 V
300 V - 0,71 - µAs
600 A/us
300 V
300 V - 0,12 - mJ
V
I
RM
Q
E
rec
- 1,85 2,25 V
F
-11- A
- 0,35 - µAs
r
- 0,05 - mJ
min. typ. max.
10,0 A
10,0 A - 2,2 - V
0,35mA
600V mA- 5,0-
V
V
CE sat
GE(TO)
C
ies
GES
- 1,95 2,55 V
4,5 5,5 6,5 V
- 0,8 - nF
- - 400 nA
Diode Brems-Chopper / diode brake-chopper
Durchlaßspannung
forward voltage
NTC-Widerstand / NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
100
100
Verlustleistung
power dissipation
B-Wert
B-value
= 25°C, IF =
T
vj
= 125°C, IF =
T
vj
= 25°C R
T
C
TC = 100°C, R
T
= 25°C P
C
= R1 exp [B(1/T2 - 1/T1)] B
R
2
= 493 Ω
100
10,0 A
10,0 A - 1,9 - V
3(12)
V
25
∆R/R
25
25/50
min. typ. max.
- 1,85 2,25 V
F
min. typ. max.
-5-
-5 5 %
3375 K
kΩ
20 mW
Technische Information / technical information
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to heatsink
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
FB10R06KL4GB1
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter - 4,3 - K/W
Trans. Bremse/ trans. brake - 2,8 - K/W
Diode Bremse/ diode brake - 4,3 - K/W
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans.inverter - - 2,2 K/W
Diode Wechselr./ diode inverter - - 3,1 K/W
Trans. Bremse/ trans. brake - - 2,2 K/W
Diode Bremse/ diode brake - - 3,1 K/W
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter - 1,5 - K/W
Trans. Bremse/ trans. brake - 0,8 - K/W
Diode Bremse/ diode brake - 1,5 - K/W
λ
Paste
λ
grease
λ
Paste
λ
grease
=1W/m*K
=1W/m*K
=1W/m*K
=1W/m*K
Vorläufig
preliminary
min. typ. max.
R
thJH
R
thJC
R
thCH
T
T
op
T
stg
- 2,6 - K/W
- 2,8 - K/W
- - 2,4 K/W
- 0,4 - K/W
- 0,8 - K/W
- - 150 °C
vj
-40 - 125 °C
-40 - 125 °C
Mechanische Eigenschaften / mechanical properties
Innere Isolation
internal insulation
CTI
comperative tracking index
Anpreßkraft f. mech. Befestigung pro Feder
mounting force per clamp
Gewicht
weight
Kontakt - Kühlkörper
terminal to heatsink
Terminal - Terminal
terminal to terminal
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
Al
2O3
225
40...80FN
G36g
13,5 mm
12 mm
7,5 mm
7,5 mm
4(12)
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