User Guide Please read the Important Notice and Warnings at the end of this document V 1.0
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UG2020-10
EVAL-FFXMR12KM1DR user guide
Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge
modules
About this document
The purpose of this board is to enable the evaluation of the FF6MR12KM1, FF3MR12KM1 and FF2MR12KM1
CoolSiC™ MOSFET modules. The evaluation board allows users to evaluate the device performance via doublepulse measurements.
Scope and purpose
The properties of this board are described in the design features’ chapter of this document. The remaining
sections provide information to enable designers to copy, modify and qualify the design for production,
according to the customer-specific requirements.
Environmental regulations have been considered in the design of the EVAL-FFXMR12KM1DR board.
Components qualified for a lead-free, reflow soldering process have been selected. The design has been tested
as described in this document, but not qualified regarding manufacturing and operation over the whole
operating temperature range or lifetime.
Intended audience
This document is intended for engineers who want to document and evaluate the switching performance of
Infineon CoolSiC™ 62 mm modules.
Evaluation board
This board will be used during design-in, for evaluation and measurement of characteristics, and proof of
datasheet specifications.
Note: PCB and auxiliary circuits are NOT optimized for final customer design.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
Important notice
Important notice
“Evaluation Boards and Reference Boards” shall mean products embedded on a printed circuit board
(PCB) for demonstration and/or evaluation purposes, which include, without limitation, demonstration,
reference and evaluation boards, kits and design (collectively referred to as “Reference Board”).
Environmental conditions have been considered in the design of the Evaluation Boards and Reference
Boards provided by Infineon Technologies. The design of the Evaluation Boards and Reference Boards
has been tested by Infineon Technologies only as described in this document. The design is not qualified
in terms of safety requirements, manufacturing and operation over the entire operating temperature
range or lifetime.
The Evaluation Boards and Reference Boards provided by Infineon Technologies are subject to functional
testing only under typical load conditions. Evaluation Boards and Reference Boards are not subject to the
same procedures as regular products regarding returned material analysis (RMA), process change
notification (PCN) and product discontinuation (PD).
Evaluation Boards and Reference Boards are not commercialized products, and are solely intended for
evaluation and testing purposes. In particular, they shall not be used for reliability testing or production.
The Evaluation Boards and Reference Boards may therefore not comply with CE or similar standards
(including but not limited to the EMC Directive 2004/EC/108 and the EMC Act) and may not fulfill other
requirements of the country in which they are operated by the customer. The customer shall ensure that
all Evaluation Boards and Reference Boards will be handled in a way which is compliant with the relevant
requirements and standards of the country in which they are operated.
The Evaluation Boards and Reference Boards as well as the information provided in this document are
addressed only to qualified and skilled technical staff, for laboratory usage, and shall be used and
managed according to the terms and conditions set forth in this document and in other related
documentation supplied with the respective Evaluation Board or Reference Board.
It is the responsibility of the customer’s technical departments to evaluate the suitability of the
Evaluation Boards and Reference Boards for the intended application, and to evaluate the completeness
and correctness of the information provided in this document with respect to such application.
The customer is obliged to ensure that the use of the Evaluation Boards and Reference Boards does not
cause any harm to persons or third party property.
The Evaluation Boards and Reference Boards and any information in this document is provided "as is"
and Infineon Technologies disclaims any warranties, express or implied, including but not limited to
warranties of non-infringement of third party rights and implied warranties of fitness for any purpose, or
for merchantability.
Infineon Technologies shall not be responsible for any damages resulting from the use of the Evaluation
Boards and Reference Boards and/or from any information provided in this document. The customer is
obliged to defend, indemnify and hold Infineon Technologies harmless from and against any claims or
damages arising out of or resulting from any use thereof.
Infineon Technologies reserves the right to modify this document and/or any information provided
herein at any time without further notice.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
Safety precautions
Safety precautions
Note: Please note the following warnings regarding the hazards associated with development systems.
Warning: The DC link potential of this board is up to 1000 VDC. When measuring voltage
waveforms by oscilloscope, high voltage differential probes must be used. Failure to do
so may result in personal injury or death.
Warning: The evaluation or reference board is connected to the grid input during
testing. Hence, high-voltage differential probes must be used when measuring voltage
waveforms by oscilloscope. Failure to do so may result in personal injury or death.
Darkened display LEDs are not an indication that capacitors have discharged to safe
voltage levels.
Caution: Only personnel familiar with the drive, power electronics and associated
machinery should plan, install, commission and subsequently service the system.
Failure to comply may result in personal injury and/or equipment damage.
Caution: The evaluation or reference board contains parts and assemblies sensitive to
electrostatic discharge (ESD). Electrostatic control precautions are required when
installing, testing, servicing or repairing the assembly. Component damage may result
if ESD control procedures are not followed. If you are not familiar with electrostatic
control procedures, refer to the applicable ESD protection handbooks and guidelines.
Caution: The evaluation or reference board is shipped with packing materials that
need to be removed prior to installation. Failure to remove all packing materials that
are unnecessary for system installation may result in overheating or abnormal
operating conditions.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
Table of contents
Table of contents
About this document ....................................................................................................................... 1
Important notice ............................................................................................................................ 2
Safety precautions .......................................................................................................................... 3
Table of contents ............................................................................................................................ 4
1 The board at a glance .............................................................................................................. 5
1.1 Delivery content ...................................................................................................................................... 5
1.2 Main features ........................................................................................................................................... 5
1.3 Typical applications ................................................................................................................................ 5
1.4 Board parameters and technical data .................................................................................................... 6
2 System and functional description ........................................................................................... 7
2.1 Commissioning ........................................................................................................................................ 7
2.2 Description of the functional blocks ....................................................................................................... 7
2.3 Active voltage clamping .......................................................................................................................... 8
3 System design........................................................................................................................ 9
3.1 Schematics .............................................................................................................................................. 9
3.2 Layout .................................................................................................................................................... 10
3.3 Bill of material ....................................................................................................................................... 12
3.4 Connector details .................................................................................................................................. 12
4 System performance ............................................................................................................. 14
4.1 Switching performance ......................................................................................................................... 15
4.1.1 MOSFET switch-on behavior ............................................................................................................ 15
4.1.2 MOSFET switch-off behavior ............................................................................................................ 17
4.1.3 Switching behavior of body diode ................................................................................................... 18
4.1.4 Conclusion of the measurement results: ........................................................................................ 19
4.2 Thermal performance ........................................................................................................................... 19
5 References and appendices .................................................................................................... 20
5.1 Abbreviations and definitions ............................................................................................................... 20
5.2 References ............................................................................................................................................. 20
5.3 Additional information .......................................................................................................................... 20
Revision history ............................................................................................................................. 21
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
The board at a glance
1 The board at a glance
An industrial benchmark technology in a 62 mm package, the CoolSiC™ Trench MOSFET opens and enlarges the
semiconductor module market for high-volume applications. CoolSiC™ Trench MOSFETs allow modern inverter
designs with never-before-seen levels of efficiency and power density. The evaluation board allows the
customer to begin initial characterization measurements very quickly.
1.1 Delivery content
The board appears as shown in Figure 1. It is important to note that the gate resistors are left empty to be
equipped with individual values in line with the customer’s needs. The recommended resistor type is shown in
Chapter 2.2. A suitable connection of the active-clamp solder pins has to be established to use this function and
make the device safe in case of an overvoltage event at turn-off.
Figure 1 EVAL-FFXMR12KM1DR connected to a 62 mm CoolSiC™ Trench MOSFET moduleBlock
diagram
1.2 Main features
Half-bridge driver for 62 mm modules with CoolSiC™ Trench MOSFET technology
Electrically and mechanically suitable for 600 V 62 mm modules with CoolSiC™ Trench MOSFET technology
Negative voltage adjustment from -5 V to 0 V
Positive voltage adjustment for high switching frequencies
Proper PCB design to limit the PCB heating during operation
1.3 Typical applications
High frenquency switching applications
DC/DC converter
Solar application
UPS systems
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
The board at a glance
1.4 Board parameters and technical data
The EVAL-FFXMR12KM1DR is a gate driver board for driving 62 mm modules with our latest CoolSiC™ Trench
MOSFET technology in a half-bridge configuration. It shows a reliable and fast controllability of such devices
using the famous 1EDI20I12AH compact driver together with a booster stage to increase the driver output
power.
The EVAL-FFXMR12KM1DR operates with a supply voltage of up to 24 V. It generates an output voltage of up to
18 V at the gate terminals, depending on the load conditions. To switch the device, a pulse width modulation
(PWM) for both, the top and the bottom side need to be applied at the connector input. A negative signal at the
enable pin turns off the device. The detailed description of the functional blocks is shown in the next chapter.
Table 1 Parameter
Parameter
Symbol
Conditions
Value
Unit
Input voltage
Vin +24
V
PWM input for top switch
PWMTOP
0/+15
V
PWM input for bottom switch
PWMBOT
0/+15
V
Enable signal
ENABLE
Set to 0V to disable
0/+15
V
Negative gate source voltage
V
GS,neg
-5,9…0
V
Positive gate source voltage
V
GS,pos
+15…+18
V
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System and functional description
2 System and functional description
2.1 Commissioning
The EVAL-FFXMR12KM1DR is powered up at the phoenix-MCV, two-pin connector as shown in Figure 2. The
input signals are attached by using a 10-pin, flat cable connector. Further details about the pin connector are
shown in Chapter 3.4.
Proper gate resistors need to be soldered onto the board, based on the customer switching conditions. A
detailed explanation for selecting the suitable resistors is explained in the next chapter.
The module is soldered onto the gate terminals of the 62 mm module. A suited probe tip adaptor can be
soldered next to the gate terminals to measure the gate source voltage (VGS).
Figure 2 Overview of the functional blocks of the EVAL-FFXMR12KM1DR
2.2 Description of the functional blocks
The most important functional blocks are shown in Figure 2.
The on-board isolated DC/DC converter generates an output voltage of up to 18 V depending on the load
conditions. The transformer used has a working voltage of 848 V
rms
, providing a sufficient safety margin to
handle our 62 mm devices. The positive voltage is fed to the secondary side of the driver circuit directly,
whereas the negative voltage is adjustable from -5.9 V to -0.4 V by using the jumper settings shown in Figure 4.
Figure 3 Jumper settings for the negative voltage adjustment V
neg
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System and functional description
The adjustable output voltage (Vneg) can be calculated by the equation given in Figure 4.
Figure 4 Equation to calculate Vneg for the negative gate voltage adjustments
The EVAL-FFXMR12KM1DR is equipped with the single-channel isolated gate driver 1EdI20H12AH. This compact
driver has two input modes IN+ and IN- to control the switch. The PWM is connected to the IN+ pin, whereas the
IN- pin is used for the enable signal. The enable signal can be used to switch off the device with an external
signal that is set to low.
The output of the driver is connected to a push-pull booster stage to increase the output power of the driver
stage. Further details about the design of booster stages can be found in External Booster for Driver IC [1].
The gate resistors are not included and need to be soldered on the board according to customer needs. Metal
electrode leadless faces (MELF) packages are recommended, since they are very robust in terms of impulse
currents, and offer a long-term reliability under thermal stress. Two resistors can be attached in parallel for
both the external gate turn-on resistance (R
G,on
) and the external gate turn-off resistance (R
G,off
) signal path.
2.3 Active voltage clamping
Please make sure to also connect the drain sense contacts of the EVAL-FFXMR12KM1DR driver board as shown
in Figure 5. This picture shows a vertical positioning of the driver board that is also possible in case other
components, e.g. the DC link do not allow a horizontal placement of the driver that is close to the module.
Active clamping is used to keep the V
DS
overvoltage below V
DSS
when switching off the MOSFET. A series
connection of TVS diodes is used to protect the device once an overvoltage occurs while turning off a short
cicuit or overcurrent. During such an event, a current is shared between the gate of the MOSFET and the driver
output once the overvoltage is exceeding the breakdown voltage of the diodes. This leads to an increasing gate
source voltage and the turn off event is interrupted.
Figure 5 Example of a vertical connection and the drain sense connection of the driver board.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System design
3 System design
The FFXMR12KM1DR is a simple driver board for evaluating the switching performance of our 62 mm module
including our new CoolSiC™ Trench MOSFET technology. All functional blocks are designed to show a simple
circuit approach to accommodate the best performance of our new SiC devices.
3.1 Schematics
The schematics that are shown here are just an excerpt from the entire documentation that can be found in the
PCB design data of the EVAL-FFXMR12KM1DR board homepage at www.infineon.com.
Figure 6 Positive power supply VDRV
The linear voltage regulator IFX27001 in a DPAK package is used to deliver an accurate supply voltage (VDRV),
which is used as supply voltage of the push-pull stage at the isolated DC-DC converter. The positive voltage
(VDRV) can be adjusted by the external voltage devider of and
as shown in Figure 7. Please also see the
datsheet of the IFX27001 for additional information. Please consider that the actual isolated supply voltage of
the driver section (VISO) depends on the load conditions.
Figure 7 Calculation to set the positive output voltage of the IFX27001
The widely-known IR2085S is used as half-bridge driver as shown in Figure 8. This approach can also be used to
generate a galvanic isolation of two independent driver stages, e.g. of a full bridge or a 3-phase topology as
shown in the CoolSiC™ MOSFET motor drives evaluation board for 7.5 kW [2].
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System design
Figure 8 Isolated DC-DC converter using the IR2085S
3.2 Layout
The layer stack of the board consists of four layers, including the top, bottom and two internal layers. The top
layer is used for the direct connection of signals of most of the components as shown in Figure 9. The bottom
layer is used to feed in the negative output signals –VISO on the secondary side that is the driver output side of
the board. The internal layers 1 and 2 are used to improve the driver output signals against noise as shown in
Figure 11 and Figure 12. The internal layer 1 is used for the ground signal of the secondary side and to route the
signals of the driver output to the booster stage. The Gerber and ODB++ files can also be accessed via the PCB
design data tab of the EVAL-FFXMR12KM1DR board homepage at www.infineon.com.
Figure 9 FFXMR12KM1DR with the top layer highlighted
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System design
Figure 10 FFXMR12KM1DR with the bottom layer highlighted
Figure 11 FFXMR12KM1DR with the internal layer 1 highlighted
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System design
Figure 12 FFXMR12KM1DR with the internal layer 2 highlighted
3.3 Bill of material
Please see the most important components of the board in Table 2. Please note that the detailed BOM of the
EVAL-FFXMR12KM1DR is available at www.infineon.com.
Table 2 BOM of the most important/critical parts of the evaluation or reference board (example)
S. No.
Ref Designator
Description
Manufacturer
Manufacturer P/N
55
U1
INFINEON_SiC_62mm_Module
Infineon
FF6MR12KM1
56
U2_R1, U2_R2
INFINEON_IFX20001MBV50HTSA1
Infineon
IFX20001MBV50HTSA1
58
U4_P1, U4_P2
INFINEON_1EDI20H12AH
Infineon
1EDI20H12AH
59
U5
IR2085S
Infineon
AUIR2085STR
60
U6
INFINEON_IFX27001TFV
Infineon
IFX27001TFV
61
U7
INFINEON_IFX30081SJVXUMA1
Infineon
IFX30081SJVXUMA1
3.4 Connector details
Table 3 Connector X1
PIN
Label
Function
X1.1
+24VIN
24 V input
X1.2
GND
Input ground
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System design
Table 4 Connector X2
PIN
Label
Function
X2.1
+24VIN
24 V output
X2.2
GND
Input ground
X2.3
PWMTOP
PWM for high side
X2.4
GND
Input ground
X2.5
PWMBOT
PWM for bottom side
X2.6
GND
Input ground
X2.7
ENABLE
Enable signal // Set to low to disable the output of the drivers
X2.8
GND
Input ground
X2.9
+15V
15 V output
X2.10
GND
Input ground
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System performance
4 System performance
Figure 13 captures the test setup and voltage measurement techniques for double-pulse testing. The first turnon pulse of the low-side device (S2) establishes the desired current value (e.g. nominal data sheet current in
this case) in the inductive load, and the turn-off pulse makes the current flow in the freewheeling diode (e.g.
body diode of the top device S1 in this case). An external inductance value was used in the actual test setup.
The second turn-on pulse measures the low-side device turn-on characteristics, which also include the reverse
recovery of the freewheeling body diode.
Figure 13 Test setup and voltage measurement techniques
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System performance
4.1 Switching performance
This chapter presents some examples of extracted waveforms of the module FF2MR12KM1, which has been
characterized with the help of the evaluation board.
One key aspect in designing half-bridge topologies with SiC MOSFET devices is to investigate the parasitic turnon of the upper switch during switching of the lower switch, and vice versa. This effect may be caused by a high
dv/dt of a SiC MOSFET, which can exceed 50 kV/µs for a CoolSiC™ MOSFET.
To mitigate the situtation, two approaches have been considered here.
As a first approach, different gate source voltages (VGS = -5…0 V / +15…18 V) are used to drive the gate of the
device. In the case of unipolar switching, the dv/dt can be reduced by using larger gate resistance to mitigate
the parasitic turn-on events. This is a significant advantage demonstrating the simple gate controllability of
CoolSiC™ MOSFET devices.
4.1.1 MOSFET switch-on behavior
The negative output voltage of the board was adjusted from -5 V to 0 V as shown in Figure 14.
The closer the voltage gets to the edge of a gate source voltage of 0 V, the fewer oscillations can be observed for
the drain current (ID) and the drain source voltage (VDS).
Figure 14 Turn-on waveforms with different gate source voltages(V
GS
= -5 … 0 V / +15 V)
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System performance
Figure 15 Turn-on losses (E
on
) with different gate source voltages (VGS = -5V … 0 V/ +15 V) and different
driver cable lengths
The influence of the length of the gate cable was observed by soldering drilled cables (8 cm/ 20 cm) onto the
gate-source terminals of the board and the gate-source terminals of the module. The results of the measured
turn-on losses (Eon) are shown in Figure 15. One can see the influence of both, the different negative gate source
voltages VGS and the different cable lengths from the driver to the device. The influence of the negative value of
VGS has a small impact on the switching curves and therefore on the switching losses. The influence of the
length of the gate/ source connection remains within the range of measurement uncertainty. Figure 16 shows
the influence of a typical value for VGS, where a higher value for the positive voltage leads to faster switching,
reducing the turn on losses with a smaller R
DS on
.
Figure 16 Turn on waveforms of typical bipolar voltage values with V
GS
= -3…+15 V /…+18 V.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System performance
4.1.2 MOSFET switch-off behavior
The turn-off switching with different bipolar voltage levels was observed by changing the R
G,off
in a way that the
gate current stays the same for each testing sequence. The waveforms during turn-off are shown in Figure 17
showing the same course of the current and voltage curves for the different negative values of VGS.
Figure 17 Turn-off waveforms with different gate source voltages (V
GS
= -5… 0 V/ +15 V)
The previous findings can also be applied when considering Figure 18, where the turn-off losses (E
off
) for
different negative gate source voltages and different lengths of the driver connection are shown. Please notice
that for each individual negative gate-source voltage, the gate current was the same by adjusting the R
G,off
.
Figure 18 Turn-off losses with different gate-source voltages (V
GS
= -5… 0 V/ +15 V) and different driver
cable lengths
-5 -4 -3 -2 -1 0
0,000
0,005
0,010
0,015
0,020
0,025
0,030
0,035
E
off
[J]
V
GS
[V]
direct
8cm cable
20cm cable
-1,5
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System performance
4.1.3 Switching behavior of body diode
Although the body diode causes few losses, it is a good illustration of parasitic switch-on. Observing the
switching curves during the recovery of the body diode, one can see that both the curve of the drain current as
well as the drain-source voltage become very smooth. This is dependent on the value of the negative VGS,
leading to a parasitic switch-on.
Figure 19 Body diode turn-off with different gate source voltages (V
GS
= -5…0 V /+15 V)
The influence of the cable length on the parasitic switch-on was observed, and shows an influence on the
recovery losses (E
rec
) of the body diode as illustrated in Figure 20. Although the influence of the cable length on
the recovery losses is relatively high, the total value of E
rec
is still very low in comparison to the total switching
losses. The recovery losses are not shown in the datasheets, since the typical recovery losses are close to zero.
Figure 20 Recovery losses of body diode with different gate source voltages (V
GS
= -5…0 V /+15 V) and
different cable length
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System performance
4.1.4 Conclusion of the measurement results:
Adapted gate-source voltage (V
GS
= -5… 0 V / +15… +18 V)
− Turn-on losses rise slightly with higher V
GS
going from -5 V to 0 V
− Turn-off losses at the same level (same gate current modified with R
g
)
− Turn-on losses with a gate-source voltage of 18 V for faster switching and lower conduction losses due to
lower R
DS on
− We recommend switching to a device with a gate-source voltage that is V
GS
= -3 V/+18 V to gain the
highest power-handling capability (lowest R
DS on
)
Different gate-cable lengths (direct / 8 cm / 20 cm)
− Turn-on losses and turn-off losses at the same level
− Gate cable length longer than 20 cm were not considered
Parasitic turn-on
− Parasitic turn-on rises from V
GS
= -3…0 V leading to a reduction of oscillations and slightly higher turn-on
losses
− Turn-off losses at the same level (gate current modified with R
goff
)
− A slight parasitic turn-on can be targeted to keep oscillation low, with slightly higher losses. CoolSiC™
MOSFET technology has a high robustness against parasitic turn-on
4.2 Thermal performance
The thermal performance of the device for switching a FF2MR12KM1 with up to 40 kHz was tested. The module
was attached to a heat plate. The temperature of the heat plate (TH) was set to 80°C, 105°C and 125°C for 10
minutes each, before the observation of the board was recorded. The surface of the evaluation board was
scanned with an IR camera to observe the temperature of the components, e.g. the driver IC, booster stage and
the gate resistors. The gates were switched with an amplitude of -5 V to +18 V. The results of the thermal
analysis is shown in Figure 21. The observed temperatures of the components remain far below the critical
value of 105 °C.
Figure 21 Thermal performance of the board (left) and an IR picture of the setup (right).
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References and appendices
5 References and appendices
5.1 Abbreviations and definitions
Table 5 Abbreviations
Abbreviation
Meaning
CE
Conformité Européenne
TVS
Transient Voltage Suppressor
PWM
Pulse Width Modulation
UL
Underwriters Laboratories
5.2 References
[1] Infineon Technologies AG. AN2013-10 (Rev. 2014): External Booster for Driver IC V 1.6 www.infineon.com
[2] Infineon Technologies AG. AN2019-25: CoolSiC™ MOSFET motor drives evaluation board for 7.5 kW - Eval-
M5-E1B1245N-SiC www.infineon.com
5.3 Additional information
The power board is now available for customers in small order quantities.
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Revision history
Revision history
Document
version
Date of release
Description of changes
1.0
2020-10-20
Initial version
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2020-10-19
UG 2020-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2020 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
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delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
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