Infineon EVAL-FFXMR12KM1DR User Manual
User Guide Please read the Important Notice and Warnings at the end of this document V 1.0
www.infineon.com page 1 of 22 2020-10-20
UG2020-10
EVAL-FFXMR12KM1DR user guide
Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge
modules
About this document
The purpose of this board is to enable the evaluation of the FF6MR12KM1, FF3MR12KM1 and FF2MR12KM1
CoolSiC™ MOSFET modules. The evaluation board allows users to evaluate the device performance via doublepulse measurements.
Scope and purpose
The properties of this board are described in the design features’ chapter of this document. The remaining
sections provide information to enable designers to copy, modify and qualify the design for production,
according to the customer-specific requirements.
Environmental regulations have been considered in the design of the EVAL-FFXMR12KM1DR board.
Components qualified for a lead-free, reflow soldering process have been selected. The design has been tested
as described in this document, but not qualified regarding manufacturing and operation over the whole
operating temperature range or lifetime.
Intended audience
This document is intended for engineers who want to document and evaluate the switching performance of
Infineon CoolSiC™ 62 mm modules.
Evaluation board
This board will be used during design-in, for evaluation and measurement of characteristics, and proof of
datasheet specifications.
Note: PCB and auxiliary circuits are NOT optimized for final customer design.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
Important notice
Important notice
“Evaluation Boards and Reference Boards” shall mean products embedded on a printed circuit board
(PCB) for demonstration and/or evaluation purposes, which include, without limitation, demonstration,
reference and evaluation boards, kits and design (collectively referred to as “Reference Board”).
Environmental conditions have been considered in the design of the Evaluation Boards and Reference
Boards provided by Infineon Technologies. The design of the Evaluation Boards and Reference Boards
has been tested by Infineon Technologies only as described in this document. The design is not qualified
in terms of safety requirements, manufacturing and operation over the entire operating temperature
range or lifetime.
The Evaluation Boards and Reference Boards provided by Infineon Technologies are subject to functional
testing only under typical load conditions. Evaluation Boards and Reference Boards are not subject to the
same procedures as regular products regarding returned material analysis (RMA), process change
notification (PCN) and product discontinuation (PD).
Evaluation Boards and Reference Boards are not commercialized products, and are solely intended for
evaluation and testing purposes. In particular, they shall not be used for reliability testing or production.
The Evaluation Boards and Reference Boards may therefore not comply with CE or similar standards
(including but not limited to the EMC Directive 2004/EC/108 and the EMC Act) and may not fulfill other
requirements of the country in which they are operated by the customer. The customer shall ensure that
all Evaluation Boards and Reference Boards will be handled in a way which is compliant with the relevant
requirements and standards of the country in which they are operated.
The Evaluation Boards and Reference Boards as well as the information provided in this document are
addressed only to qualified and skilled technical staff, for laboratory usage, and shall be used and
managed according to the terms and conditions set forth in this document and in other related
documentation supplied with the respective Evaluation Board or Reference Board.
It is the responsibility of the customer’s technical departments to evaluate the suitability of the
Evaluation Boards and Reference Boards for the intended application, and to evaluate the completeness
and correctness of the information provided in this document with respect to such application.
The customer is obliged to ensure that the use of the Evaluation Boards and Reference Boards does not
cause any harm to persons or third party property.
The Evaluation Boards and Reference Boards and any information in this document is provided "as is"
and Infineon Technologies disclaims any warranties, express or implied, including but not limited to
warranties of non-infringement of third party rights and implied warranties of fitness for any purpose, or
for merchantability.
Infineon Technologies shall not be responsible for any damages resulting from the use of the Evaluation
Boards and Reference Boards and/or from any information provided in this document. The customer is
obliged to defend, indemnify and hold Infineon Technologies harmless from and against any claims or
damages arising out of or resulting from any use thereof.
Infineon Technologies reserves the right to modify this document and/or any information provided
herein at any time without further notice.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
Safety precautions
Safety precautions
Note: Please note the following warnings regarding the hazards associated with development systems.
Warning: The DC link potential of this board is up to 1000 VDC. When measuring voltage
waveforms by oscilloscope, high voltage differential probes must be used. Failure to do
so may result in personal injury or death.
Warning: The evaluation or reference board is connected to the grid input during
testing. Hence, high-voltage differential probes must be used when measuring voltage
waveforms by oscilloscope. Failure to do so may result in personal injury or death.
Darkened display LEDs are not an indication that capacitors have discharged to safe
voltage levels.
Caution: Only personnel familiar with the drive, power electronics and associated
machinery should plan, install, commission and subsequently service the system.
Failure to comply may result in personal injury and/or equipment damage.
Caution: The evaluation or reference board contains parts and assemblies sensitive to
electrostatic discharge (ESD). Electrostatic control precautions are required when
installing, testing, servicing or repairing the assembly. Component damage may result
if ESD control procedures are not followed. If you are not familiar with electrostatic
control procedures, refer to the applicable ESD protection handbooks and guidelines.
Caution: The evaluation or reference board is shipped with packing materials that
need to be removed prior to installation. Failure to remove all packing materials that
are unnecessary for system installation may result in overheating or abnormal
operating conditions.
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
Table of contents
Table of contents
About this document ....................................................................................................................... 1
Important notice ............................................................................................................................ 2
Safety precautions .......................................................................................................................... 3
Table of contents ............................................................................................................................ 4
1 The board at a glance .............................................................................................................. 5
1.1 Delivery content ...................................................................................................................................... 5
1.2 Main features ........................................................................................................................................... 5
1.3 Typical applications ................................................................................................................................ 5
1.4 Board parameters and technical data .................................................................................................... 6
2 System and functional description ........................................................................................... 7
2.1 Commissioning ........................................................................................................................................ 7
2.2 Description of the functional blocks ....................................................................................................... 7
2.3 Active voltage clamping .......................................................................................................................... 8
3 System design........................................................................................................................ 9
3.1 Schematics .............................................................................................................................................. 9
3.2 Layout .................................................................................................................................................... 10
3.3 Bill of material ....................................................................................................................................... 12
3.4 Connector details .................................................................................................................................. 12
4 System performance ............................................................................................................. 14
4.1 Switching performance ......................................................................................................................... 15
4.1.1 MOSFET switch-on behavior ............................................................................................................ 15
4.1.2 MOSFET switch-off behavior ............................................................................................................ 17
4.1.3 Switching behavior of body diode ................................................................................................... 18
4.1.4 Conclusion of the measurement results: ........................................................................................ 19
4.2 Thermal performance ........................................................................................................................... 19
5 References and appendices .................................................................................................... 20
5.1 Abbreviations and definitions ............................................................................................................... 20
5.2 References ............................................................................................................................................. 20
5.3 Additional information .......................................................................................................................... 20
Revision history ............................................................................................................................. 21
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
The board at a glance
1 The board at a glance
An industrial benchmark technology in a 62 mm package, the CoolSiC™ Trench MOSFET opens and enlarges the
semiconductor module market for high-volume applications. CoolSiC™ Trench MOSFETs allow modern inverter
designs with never-before-seen levels of efficiency and power density. The evaluation board allows the
customer to begin initial characterization measurements very quickly.
1.1 Delivery content
The board appears as shown in Figure 1. It is important to note that the gate resistors are left empty to be
equipped with individual values in line with the customer’s needs. The recommended resistor type is shown in
Chapter 2.2. A suitable connection of the active-clamp solder pins has to be established to use this function and
make the device safe in case of an overvoltage event at turn-off.
Figure 1 EVAL-FFXMR12KM1DR connected to a 62 mm CoolSiC™ Trench MOSFET moduleBlock
diagram
1.2 Main features
Half-bridge driver for 62 mm modules with CoolSiC™ Trench MOSFET technology
Electrically and mechanically suitable for 600 V 62 mm modules with CoolSiC™ Trench MOSFET technology
Negative voltage adjustment from -5 V to 0 V
Positive voltage adjustment for high switching frequencies
Proper PCB design to limit the PCB heating during operation
1.3 Typical applications
High frenquency switching applications
DC/DC converter
Solar application
UPS systems
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
The board at a glance
1.4 Board parameters and technical data
The EVAL-FFXMR12KM1DR is a gate driver board for driving 62 mm modules with our latest CoolSiC™ Trench
MOSFET technology in a half-bridge configuration. It shows a reliable and fast controllability of such devices
using the famous 1EDI20I12AH compact driver together with a booster stage to increase the driver output
power.
The EVAL-FFXMR12KM1DR operates with a supply voltage of up to 24 V. It generates an output voltage of up to
18 V at the gate terminals, depending on the load conditions. To switch the device, a pulse width modulation
(PWM) for both, the top and the bottom side need to be applied at the connector input. A negative signal at the
enable pin turns off the device. The detailed description of the functional blocks is shown in the next chapter.
Table 1 Parameter
Parameter
Symbol
Conditions
Value
Unit
Input voltage
Vin +24
V
PWM input for top switch
PWMTOP
0/+15
V
PWM input for bottom switch
PWMBOT
0/+15
V
Enable signal
ENABLE
Set to 0V to disable
0/+15
V
Negative gate source voltage
V
GS,neg
-5,9…0
V
Positive gate source voltage
V
GS,pos
+15…+18
V
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Evaluation board for 1200 V CoolSiC™ MOSFET 62 mm half-bridge modules
System and functional description
2 System and functional description
2.1 Commissioning
The EVAL-FFXMR12KM1DR is powered up at the phoenix-MCV, two-pin connector as shown in Figure 2. The
input signals are attached by using a 10-pin, flat cable connector. Further details about the pin connector are
shown in Chapter 3.4.
Proper gate resistors need to be soldered onto the board, based on the customer switching conditions. A
detailed explanation for selecting the suitable resistors is explained in the next chapter.
The module is soldered onto the gate terminals of the 62 mm module. A suited probe tip adaptor can be
soldered next to the gate terminals to measure the gate source voltage (VGS).
Figure 2 Overview of the functional blocks of the EVAL-FFXMR12KM1DR
2.2 Description of the functional blocks
The most important functional blocks are shown in Figure 2.
The on-board isolated DC/DC converter generates an output voltage of up to 18 V depending on the load
conditions. The transformer used has a working voltage of 848 V
rms
, providing a sufficient safety margin to
handle our 62 mm devices. The positive voltage is fed to the secondary side of the driver circuit directly,
whereas the negative voltage is adjustable from -5.9 V to -0.4 V by using the jumper settings shown in Figure 4.
Figure 3 Jumper settings for the negative voltage adjustment V
neg
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