Höchstzulässige SperrschichttemperaturT
max. junction temperature
BetriebstemperaturT
operating temperature
LagertemperaturT
storage temperature
R
R
thJC
thCK
vj max
c op
stg
max.1,08°C/W
max.0,38°C/W
max.1,00°C/W
max.0,25°C/W
max.0,24°C/W
max.0,30°C/W
150°C
- 40...+150°C
- 40...+150°C
BIP AM; R. Jörke14. Dez 00Seite/page 2(12)
Technische Information / Technical Information
Mechanische Eigenschaften / Mechanical properties
Temperatursensor / Temperature sensor
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
DD B6U 104 N 16 RRNB6
Gehäuse, siehe AnlageSeite 4
case, see appendixpage 4
Innere Isolation Al2O
3
internal insulation
CTI225V
comperative tracking index
Anzugsdrehmoment für mechanische Befestigung
Toleranz / tolerance ±15%
M14Nm
mounting torque
GewichtGtyp.185g
weight
Kriechstrecke12,5mm
creepage distance
Schwingfestigkeit
f = 50Hz
50m/s²
vibration resistance
Nennwiderstand
rated resistance
Verlustleistung
power dissipation
B-Wert
B-value
TC = 25°C
R
= 493Ω ± 5%
100
TC = 25°C
R2 = R1 exp [B(1/T1 - 1/T2)]
R
P
B
25
25
25/50
5kΩ
max.20mW
3375K
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung
mit den zugehörigen Technischen Erläuterungen. / This technical Information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
BIP AM; R. Jörke14. Dez 00Seite/page 3(12)
Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
DD B6U 104 N 16 RRNB6
BIP AM; R. Jörke
14. Dez 00
Seite/page 4(12)
Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
[
]
thn
[
]
Diode Module with Chopper-IGBT
Analytische Elemente des transienten Wärmewiderstandes Z
Analytical elements of transient thermal impedance Z
Pos. n1234567
RC W
°/
τns
0,40630,30340,04970,0309
0,03000,01900,01400,0003
DD B6U 104 N 16 RRNB6
für DC, Netz-Diode
thJC
for DC, rectifier diode
thJC
n
max
∑
n
t
−
−=
1:
thnthJC
=
1
τ
n
eRZFunktioneAnalytisch
14. Dez 00Seite/page 5(12)
Technische Information / Technical Information
Grenzdurchlaßkennlinie / Limiting on-state characteristic i
F
= f(vF)
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
200
180
160
140
DD B6U 104 N 16 RRNB6
Tvj = 150°C
[A]
F
i
120
100
80
60
40
20
0
00,20,40,60,811,21,41,61,82
BIP AM; R. Jörke
14. Dez 00
vF [V]
Seite/page 6(12)
Technische Information / Technical Information
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperatur T
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) / On-state characteristic of brake-chopper-FWD (typical)
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
50
40
DD B6U 104 N 16 RRNB6
[A]
F
i
30
20
10
Tvj = 25°CTvj = 125°C
0
00,511,522,5
vF [V]
iF = f(vF)
BIP AM; R. Jörke
14. Dez 00
Seite/page 11(12)
Technische Information / Technical Information
NTC-Temperaturkennlinie (typisch) / NTC-temperature characteristic (typical) R = f(T)
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
100
10
DD B6U 104 N 16 RRNB6
]
Ω
R [k
1
0,1
0102030405060708090100110120130140150
T [°C]
BIP AM; R. Jörke
14. Dez 00
Seite/page 12(12)
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