Marketing Information
DD 85 N
M5x11 Z4-1
European PowerSemiconductor and
Electronics Company
15,5
AK K A
20
92
20
80
9. Sept. 1998
Technische Information / Technical Information
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive reverse voltage
1600VStoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
85Aaverage on-state current
Charakteristische Werte / Characteristic values
2,5kVinsulation test voltage
Thermische Eigenschaften / Thermal properties
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
150°Cmax. junction temperature
DD 85 N 08...16
Tvj = - 40°C...T
Tvj = + 25°C...T
TC = 100°C
TC = 96°C
Tvj = 25°C, tp = 10ms
Tvj = T
Tvj = 25°C, tp = 10ms
T
Tvj = T
Tvj = T
= T
, tp = 10ms
, tp = 10ms
, iF = 230A
N
Tvj = T
Tvj = T
vD = V
, vR = V
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
pro Modul / per module, Θ
pro Zweig / per arm, Θ = 180°sin
pro Modul / per module, DC
pro Zweig / per arm, DC
pro Modul / per module
pro Zweig / per arm