Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 1461 S 35 ... 45 T
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
Stoßspitzensperrspannung
non-repetetive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge forward current
Grenzlastintegral
I2t-value
Period. Abklingsteilheit des Durchlaßstroms beim Ausschalten
repetitive decay rate of on-state current at turn-of
tvj = -40°C ... t
tvj = +25°C ... t
tC = 85°C, f = 50Hz
tC = 70°C, f = 50Hz
tvj = t
tvj = t
i
FM
CS = 3µF, RS = 4Ω
DS = D291S45T
vj max
vj max
, tp = 10ms
vj max
, tp = 10ms
vj max
= 3000A, vR = 0,67 V
RRM
S
V
RRM
3500, 4000
V
4500
V
RSM
3600, 4100
V
4600
I
FRMSM
I
FAVM
2700 A
1460
1720AA
I
FSM
32 kA
I2t 5,12-106A2s
(-diF/dt)
com
500 A/µs
Charakteristische Werte / Characteristic values
Gleichsperrspannung
continuous direct reverse voltage
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
failure rate λ < 100
estimate value
tvj = t
, iF = 2500A
vj max
tvj = t
vj max
tvj = t
vj max
tvj = t
, diF/dt = 500A/µs
vj max
tvj = t
tvj = t
iFM = 1000A, -diF/dt = 250A/µs
vR = 1000V, CS = 3,3µF, RS = 5Ω
tvj = t
iFM = 1000A, -diF/dt = 250A/µs
vR = 1000V, CS = 3,3µF, RS = 5Ω
vj max, vR
vj max
vj max
= V
RRM
V
R(D)
v
F
V
(TO)
r
T
V
FRM
i
R
I
RM
Q
r
typ.
max
2000 V
2,5 V
1,43 V
0,38
typ. 45 V
200 mA
max 840 A
max 2800 µAs
mΩ
SZ-M / 16 June 1997, Beuermann Seite/page
1
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
D 1461 S 35 ... 45 T
Kühlfläche / cooling surface
beidseitig / two-sided, DC
Anode / anode, DC
Kathode /cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single sided
R
R
t
vj max
t
c op
t
stg
thJC
thCK
S
max
0,0125
max
0,0228
max
0,0277
max
max
-40...+140 °C
-40...+150 °C
0,003
0,006
140 °C
°C/W
°C/W
°C/W
°C/W
°C/W
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Anpreßkraft
clampig force
Gewicht
weight
Kriechstrecke
creepage distance
Luftstrecke
air distance
Feuchteklasse
humidity classification
Schwingfestigkeit
vibration resistance
DIN 40040
f = 50Hz
Seite 3
F 27...45 kN
G
typ
850 g
30 mm
20 mm
C
50 m/s
2
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehörigen technischen Erläuterungen.
This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
SZ-M / 16 June 1997, Beuermann Seite/page
2
Technische Information / Technical Information
∅
100
max
∅
62,8
C
A
Schnelle Gleichrichterdiode
Fast Diode
D 1461 S 35 ... 45 T
Outline Drawing
S
+-0.5
26
2 center holes
3.5 ×1.8
∅
SZ-M / 16 June 1997, Beuermann Seite/page
3
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
3500
3000
2500
D 1461 S 35 ... 45 T
On-State Characteristics ( v F )
Upper limit of scatter range
t
= 140 ° C
vj
S
typ. max.
2000
/ [ A ]
F
I
1500
1000
500
0
0,00 0,50 1,00 1,50 2,00 2,50 3,00
VF / [V]
SZ-M / 16 June 1997, Beuermann Seite/page
4
Technische Information / Technical Information
(
)
Schnelle Gleichrichterdiode
Fast Diode
Z R e
thJC thn
D 1461 S 35 ... 45 T
Transient thermal Impedance for constant-current
Double side
cooled
r [K/W] [s] r [K/W] [s] r [K/W] [s]
1 0,0038 2 0,0141 9,2 0,019 7,9
2 0,004 0,202 0,004 0,202 0,004 0,202
3 0,0029 0,103 0,0029 0,103 0,0029 0,13
4 0,0012 0,0115 0,0012 0,0115 0,0012 0,0115
5 0,0006 0,00245 0,0006 0,00245 0,0006 0,00245
0,0125 - 0,0228 - 0,0277 -
Σ
n
∑
max
n
=
1
1
= ⋅ −
t
−
/
τ
n
Anode side
cooled
Cathode side
cooled
S
0,05
0,045
Cathode side
Anode side
Double side
0,04
0,035
0,03
0,025
0,02
0,015
0,01
0,005
Z (th) JC / [K/W]
0
0,001 0,01 0,1 1 10 100
t / [sec.]
SZ-M / 16 June 1997, Beuermann Seite/page
5
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
1,E+05
D 1461 S 35 ... 45 T
Surge Current Characteristics I
I²t value i2 dt = f ( tp )
Sine half-wave, t
=140 ° C , v
vj
FSM
= 0
R
= f ( tp )
S
1,E+07
/ [A]
FSM
1,E+04
_____ I
1,E+03
0,1 1 10 100
Time / [ms]
1,E+06
1,E+05
i²dt / [A²s]
SZ-M / 16 June 1997, Beuermann Seite/page
6
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
Reverse Recovery Current I
Conditions : t
1400
1200
D 1461 S 35 ... 45 T
= f ( - di/dt )
RM
Upper limit of scatter range
= 140 ° C Parameter: I
vj
Cs = 3 µF, Ds = D291S45T
VR >= 1000 V
S
FM
3000A
1000A
500A
/ [A]
RM
I
1000
800
600
400
200
300A
100A
0
0 100 200 300 400 500 600
di/dt / [A/µs]
SZ-M / 16 June 1997, Beuermann Seite/page
7
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
Reverse Recovery Charge Qrr = f ( - di/dt )
Conditions: t
4500
D 1461 S 35 ... 45 T
Upper limit of scatter range
= 140 ° C Parameter: I
vj
Cs = 3 µF, Ds = D291S45T
VR >= 1000 V
S
FM
3000A
/ [µAs]
RR
Q
4000
3500
3000
2500
2000
1500
1000
1000A
500A
300A
100A
500
0
0 100 200 300 400 500 600
di/dt / [A/µs]
SZ-M / 16 June 1997, Beuermann Seite/page
8
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
Reverse Recovery Energy E
Standard value for diodes with V
Conditions: t
3
D 1461 S 35 ... 45 T
= f ( - di/dt )
off
= 1,43 V, r
T(T0)
= 140 ° C Parameter: I
vj
= 0,38 mΩ
T
S
FM
Cs = 3 µF, Ds = D291S45T VR = 2000 V - - - -
VR = 3000 V ____
/ [WS]
OFF
W
2,5
1,5
0,5
3000A
1000A
2
500A
300A
1
100A
0
0 100 200 300 400 500 600
di/dt / [A/µs]
SZ-M / 16 June 1997, Beuermann Seite/page
9
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
Reverse Recovery Energy E
Standard value for diodes with V
Conditions: t
3
D 1461 S 35 ... 45 T
= f ( - di/dt )
off
= 1,12 V, r
T(T0)
= 140 ° C Parameter: I
vj
= 0,39 mΩ
T
S
FM
Cs = 3 µF, Ds = D291S45T VR = 2000 V - - - -
VR = 3000 V ____
3000A
/ [Ws]
OFF
W
1000A
2,5
500A
2
300A
1,5
1
100A
0,5
0
0 100 200 300 400 500 600
di/dt / [A/µs]
SZ-M / 16 June 1997, Beuermann Seite/page
10
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
Typical Peak Forward Recovery Voltage V
60
D 1461 S 35 ... 45 T
linear di/dt
Parameter t
vj
= f (diF/dt)
FRM
S
140°C
50
40
/ [V]
30
FRM
V
20
10
25°C
0
0 100 200 300 400 500 600 700 800
di/dt / [A/µs]
SZ-M / 16 June 1997, Beuermann Seite/page
11
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