Infineon D1031SH45T Data Sheet

Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Features:

D 1031 SH 45T

SH

• Speziell entwickelt für beschaltungslosen

• Specially designed for snubberless operation

Betrieb

• Niedrige Verluste, weiches Ausschalten • Low losses, soft recovery

• Volle Sperrfähigkeit bei 140°C mit 50Hz • Full blocking capability at 140°C with 50Hz

• Hohes di/dt und niedriger Wärmewiderstand

durch NTV-Verbindung zwischen Silizium und
Mo-Trägerscheibe

• High di/dt and low thermal resistance by

using low temperature-connection NTV
between silicon wafer and molybdenum

• Elektroaktive Passivierung durch a-C:H • Electroactive passivation by a-C:H

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Spitzensperrspannung
repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert
RMS forward current

Dauergrenzstrom
mean forward current

Stoßstrom-Grenzwert
surge forward current

Grenzlastintegral

2

t-value

I

Max. Ausschaltverluste
max. turn-off losses

Tvj = 0°C ... T
f = 50Hz

Tc = 60°C. f = 50Hz

TC = 85°C, f = 50Hz
T

C

Tvj = T

Tvj = T

I

FM

clamp circuit Lσ ≤ 0,25 µH, R
C

CL

Tvj = T

vj max

= 60°C, f = 50Hz

, Tp = 10ms

vj max

, Tp = 10ms

vj max

= 2500A, VCL = 2800V,

= 3µF, DCL = 34DSH65

vj max

CL

= 68Ω

V

RRM

I

FRMSM

I

FAVM

I

FSM

I2t

W

max

4500 V

2240 A

1140
1420AA

3,38 ⋅ 10

26 kA

6

4MW

A2s

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Gleichsperrspannung
continuous direct reverse voltage

Durchlaßspannung
forward voltage

Schleusenspannung
threshold voltage

Ersatzwiderstand
forward slope resistance

Durchlaßrechenkennlinie 250 A ≤ iF ≤ 3200 A
On-state characteristics for calculation

VABiCi Di

=+⋅+⋅ ++⋅ln 1

FFF F

()

Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage

Sperrstrom
reverse current

D 1031 SH 45T

failure rate λ < 100
estimate value

Tvj = T

, iF = 2500A

vj max

Tvj = T

vj max

Tvj = T

vj max

Tvj = T

vj max

Tvj = T

, diF/dt = 5000A/µs

vj max

IFM = 4000A

Tvj = T

vj max, vR

= V

RRM

V

R(D)

V

F

V

(TO)

r

T

A
B
C
D

V

FRM

i

R

SH

typ.

max

2800 V

max.

0,600

-0,0000339

-0,0750
0,0851

typ. 350 V

100 mA

4,2 V

1,7 V

1,0

mΩ

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Ausschaltverlust Energie
turn-off energy

Abklingsanftheit
reverse recovery softness factor

)/(

dtdi

0

irr

F

=

RRS

rf

=

)/(

dtdi

max

I

= 2500A, VCL = 2800V,

FM

clamp circuit Lσ ≤ 0,25 µH, R
C

= 3µF, DCL = 34DSH65

CL

Tvj = T

vj max

I

= 2500A, VR = 2800V

FM

-di

/dt

= 1000A/µs, dt = 200ns

rr

(i=0)

Tvj = T

,

vj max

CL

= 68Ω

I

RM

Q

r

E

off

F

RRS

max 1500 A

max 3500 µAs

7,0 Ws

typ. 1,6

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Thermische Eigenschaften / Thermal properties

D 1031 SH 45T

SH

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand
thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur
max. junction temperature

Betriebstemperatur
operating temperature

Lagertemperatur
storage temperature

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage
case, see appendix

Kühlfläche / cooling surface
beidseitig / two-sided, DC
Anode / anode, DC
Kathode /cathode, DC

Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single sided

R

R

T

T

T

thJC

thCK

vj max

c op

stg

0,0100

max
max

0,0178

max

0,0230

max
max

0,003
0,006

0...+140 °C

-40...+150 °C

Seite 3

°C/W
°C/W
°C/W

°C/W
°C/W

140 °C

Si - Element mit Druckkontakt

65DSH45

Si - pellet with pressure contact

Anpreßkraft

F 27...45 kN

clampig force

Gewicht

G

typ

850 g

weight

Kriechstrecke

30 mm

creepage distance

Luftstrecke

17 mm

air distance

Feuchteklasse

DIN 40040

C

humidity classification

Schwingfestigkeit

f = 50Hz

50 m/s

2

vibration resistance

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehörigen technischen Erläuterungen.
This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

∅

∅

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

D 1031 SH 45T

Maßbild / Outline drawing

100 max

+-0.5

26

SH

A

C

62,8

2 center holes

3.5

××××

1.8

∅∅∅∅

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Durchlaßkennlinie / On-state characteristics iF = f ( VF )

3500

3000

2500

D 1031 SH 45T

upper limit of scatter range

SH

2000

1500

1000

500

Tvj = 140°CTvj = 25°C

0

012345

VF / [V]

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

(

)

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Transienter innerer Wärmewiderstand

Transient thermal Impedance Z

D 1031 SH 45T

−⋅=

å

n

1)(

nthJCth

= f (t)

(th)JC

−

τ

/

t

n

eRtZ

SH

Double side

cooled

r [K/W] [s] r [K/W] [s] r [K/W] [s]
1 0,0054 0,509 0,0106 3,78 0,01656 3,766
2 0,00261 0,0869 0,00307 0,284 0,00151 0,386
3 0,00122 0,0156 0,00251 0,066 0,00314 0,0844
4 0,00074 0,00302 0,0011 0,00957 0,00114 0,0122
5 0,00003 0,000819 0,00052 0,00221 0,00065 0,00265

0,01 - 0,0178 - 0,023 -

Σ

Anode side

cooled

Cathode side

cooled

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Stoßstrom / Grenzlastintegral Charakteristik

Surge current / I²t value characteristics

D 1031 SH 45T

I

= f ( tp ) / i2 dt = f ( tp )

FSM

SH

1,E+05

Sine half-wave, T

=140 ° C , v

vj

R

= 0

1,E+07

1,E+04

1,E+03

0,1 1 10 100

Time / [ms]

1,E+06

1,E+05

ò

ò

ò

ò

−−−−−

−−−−−

−−−−−

−−−−−

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

Sperrverzögerungsladung / recovered charge Qr = f ( - di/dt )

Upper limit of scatter range for VF = 3,8V @2500A, 140°C

D 1031 SH 45T

SH

Conditions: T

4000

3500

3000

IFM =

2500A

2500

= 140 ° C

vj

Parameter: I

FM

clamping circuit CCL = 3 µF R
VCL = 2800 V

= 68Ω 34DSH65

CL

1000A

2000

1500

1000

500

0

0 100 200 300 400 500 600 700 800 900 1000

500A

-di/dt / [A/µs]

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

D 1031 SH 45T

SH

Rückstromspitze / peak reverse recovery current I

Upper limit of scatter range for VF = 3,8V @2500A, 140°C

Conditions: T

1750

1500

1250

= 140 ° C

vj

Parameter: I

FM

clamping circuit CCL = 3 µF R
VCL = 2800 V

= f ( - di/dt )

RM

= 68Ω 34DSH65

CL

1000

750

500

250

0

0 100 200 300 400 500 600 700 800 900 1000

IFM =

2500A

1000A

500A

100A

-di/dt / [A/µs]

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

D 1031 SH 45T

SH

Ausschaltverlust Energie / turn-off energy E

Upper limit of scatter range for VF = 3,8V @2500A, 140°C

Conditions: T

8

7

6

= 140 ° C

vj

Parameter: I

FM

clamping circuit CCL = 3 µF R
VCL = 2800 V

= f ( - di/dt )

off

= 68Ω 34DSH65

CL

5

4

3

2

1

IFM =

2500A

1000A

500A

100A

0

0 100 200 300 400 500 600 700 800 900 1000

-di/dt / [A/µs]

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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Technische Information / Technical Information

/

Schnelle beschaltungslose Diode
Fast Hard Drive Diode

400

300

[V]

200

FRM

V

Spitzen-Durchlassverzögerungsspannung

peak forward recovery voltage V

typische Abhängigkeit / typical dependence

D 1031 SH 45T

Tvj = 140°C, IFM = 4000A

= f ( diF/dt )

FRM

SH

100

0

0 1000 2000 3000 4000 5000 6000

di

dt [A/µs]

F

BIP AC / 2001-09-17, Schneider / Keller Release 2.1 Seite/page

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