High voltage MOSFETs for consumer applications
500 V, 600 V, 650 V, 700 V and 800 V
www.infineon.com/ce
Powering a green world with CoolMOS™ CE
2
Content
CoolMOS™ CE – overview
CoolMOS™ CE – smartphone and tablet chargers
CoolMOS™ CE – notebook adapters
CoolMOS™ CE – TV sets
CoolMOS™ CE for lighting applications
CoolMOS™ CE – demonstrator boards
CoolMOS™ CE – target topologies
CoolMOS™ CE – product portfolio
CoolMOS™ CE portfolio package overview
CoolMOS™ CE – cross reference
3
Ictam quodita dolorepCoolMOS™ CE
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
CoolMOS™ comes with a DPM of less than 0.1 and FIT rate of less than 0.15
DPM (data code related)
80
10-2014
11-2014
12-2014
01-2015
02-2015
03-2015
04-2015
05-2015
06-2015
07-2015
08-2015
09-2015
82
84
86
88
90
92
94
96
98
Wish date
10%
Wish date
Longer
CoolMOS™ CE – overview
CoolMOS™ CE is a product family launched by Infineon to address consumer and lighting applications. It oers
benefits in eiciency and thermal behavior versus standard MOSFETs and has been optimized for ease-of-use and costcompetitiveness, while at the same time delivering state-of-the-art performance and Infineon quality and supply security.
Powered by Infineon multi-source program, CoolMOS™ CE is determined to support customers’ success in various consumer
markets by full FAE (field application engineer) support, short lead time and fast quote response.
CoolMOS™ quality - benchmark in short term and long
Potentially additional
defects reported in 2016
based on 130 million
0
20112012201320142015
+
FIT rate < 0.15
device hours
term reliability
CoolMOS™ technology is legendary in the industry
dierentiated for its high quality, which has been proven
over the past years across billions of devices shipped with
continuous improved DPM down to less than 0.10 DPM.
Infineon has implemented firm and proven measures
from the beginning with design-for-quality program
and continuous improvement in production. There is
a constant proactive collaboration among technology,
design, quality, reliability and manufacturing teams to
achieve this result. This eort is above and beyond the
fact that all Infineon sites are ISO/TS16949 certified.
CoolMOS™ supply chain – delivery reliability, flexibility and supply security
Our customers value CoolMOS™ not only for its technical merits but also for the outstanding delivery reliability: once a
CoolMOS™ order date is committed, more than 96 percent of orders are shipped at or before the committed date. And
CoolMOS™ orders are committed to more than 80 percent to the date that the customers request. Security of supply and
flexibility to demand changes are focus targets and enabled by a well balanced production network. For example more than
90 percent of our products are qualified for production in at least two back end locations and more than 80 percent of the
volumes in two wafer fabs. This enables CoolMOS™ supply chain to react fast to changes in customer and market requirements.
Delivery reliability: ship date = committed dateDelivery capability: confirm customers’ wish date
≥ 96% of CoolMOS™ orders are shipped by the committed date and ≥ 80% of wish dates can be met
4
Wish date
+1 week
+2 weeks
6%
4%
80%
www.infineon.com/ce
Voltage range
This selection guide takes you to explore the advantages of CoolMOS™ CE in charger, adapter, TV and lighting applications
Soloreiust cone pratendeCoolMOS™ CE
CoolMOS™ CE
Charger
500 V
Product family and R
0.19 Ω – 3 Ω
600 V650 V
range
DS(on)
0.19 Ω – 3.4 Ω0.4 Ω – 1.5 Ω
Power supply topology and market segment
Adapter/charger
Quasi-resonant flyback
PC power
PFC/TTF 80+; PFC/LLC 90+
LCD TV
LLC half-bridge
LED retrofit/LED drivers
PFC/LLC/Non-isolated bulk
700 V
0.6 Ω – 2.1 Ω
LCD TV adapter
Quasi-resonant flyback
LED retrofit/LED drivers
Quasi-resonant flyback
800 V
0.31 Ω – 2.8 Ω
Reasons to choose CoolMOS™ CE
Non-technical benefits provided by CoolMOS™ CE
Product portfolio We own a broad portfolio covering five voltage classes in both through-hole and surface-mount packages.
Capacity We own the world’s largest capacity for power devices, with three dedicated frontends and four backends.
Thanks to factors such as the continued investment in our production facilities, we ensure a secure supply during a market
upswing.
Lead time We understand consumer and lighting market dynamics and oer a lead time for middle-sized orders of 4-6 weeks.
Delivery performance Our supply chain performance is constantly greater than or equal to 96 percent
(adhering to the customer committed date).
Quality Our field failure rates are as low as 0.1 PPM.
Design-in support We have a large field application engineering team dedicated to providing professional and flexible support for your design.
www.infineon.com/ce
5
Ictam quodita dolorepChargers
10 W design: IPS65R1K5CE
15 W design: IPS65R1K0CE
Level [dBµV/m]
1G
Horizontal directionVertical directionHorizontal directionVertical direction
CoolMOS™ CE – smartphone and tablet chargers
Chargers for smartphones and tablets as well as other mobile applications demand for a growing output power at same
or smaller form factors, leading to increasing power density, and stringent requirements on thermal management, EMI
emissions and overall system cost. For example, many OEMs request a device temperature less than 90°C with an open
case and close case temperature less than 50°C.
Infineon recommends its series of 700 V CoolMOS™ CE superjunction MOSFETs for this application, which are used by
leading charger OEMs and design houses in their charger applications. Compared to planar MOSFETs the 700 V CoolMOS™
CE oers reduced switching and thus higher eiciency while passing EMI standards and ringing requirements. Several
reference designs have been developed by Infineon to help customers to simplify charger design and thus providing fast
time-to-market (see reference design selection table at end of section).
Value proposition of 700 V CoolMOS™ CE:
›
High eiciency, meeting application requirements
›
More than enough safety margin in thermals, for 10 W-25 W chargers
›
Good EMI performance – meets the EMI EN55022B standard without extra design-in eort
›
Easy-to-use product due to good controllability via gate resistor
›
Large breakdown voltage of nominal 700 V (and additional guard band typical) for safety on voltage spikes
Infineon recommends CoolMOS™ CE in 700 V for charger applications to secure suicient margin for voltage spikes.
CoolMOS™ CE products are also available in 650 V and 600 V for use in less sensitive designs.
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
40
30
20
10
0
-10
30M50 60 80 100M
EN 55022 B RE 10 m OPEN 55022 B RE 10 m OP
200 300400 500 800 1G
Frequency [Hz]
40
30
20
10
Level [dBµV/m]
0
-10
30M50 60 80 100M200 300 400 500 800
EN 55022 B radiated HF-field
30 MHz – 1 GHz position
Frequency [Hz]
This figure shows the CoolMOS™ CE EMI performance in 10 W and 15 W charger applications. Maximum EMI limits are
indicated in the figure. CoolMOS™ CE could meet the EMI requirement thus oering design in flexibilities.
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www.infineon.com/ce
15 W QC 2.0 charger powered by IPS70R2K0CEIPS70R2K0CE
86
100
IPS70R2K0CE
Competitor 700 V, 1.6 Ω
Eiciency [%]
92
100
Eiciency [%]
5 V9 V12 V
Soloreiust cone pratendeChargers
85.19
84.98
85.22
84.80
84
82.32
82
81.73
Competitor 700 V, 1.6
80
25 50 75
Load [%]
Infineon CoolMOS™ CE oers higher eiciency and better thermals than planar MOSFETs: When replacing a 1.6 Ω planar
MOSFET with an Infineon 2.0 Ω CoolMOS™ CE in a 15 W QC 2.0 charger we measured ≥0.2 percent eiciency improvement. At the
same time, the MOSFET temperature was 7°C cooler, showing a clear benefit of using CoolMOS™ CE for charger applications.
Infineon’s 24 W QC 2.0 charger powered by IPS70R950CEInfineon’s 24 W quick charger
90
88
86
84
82
80
Also for 24 W quick chargers CoolMOS™ CE oers excellent eiciency, e.g., with the IPS70R950CE. Besides eiciency it
passes other spec requirements. The board is orderable through Infineon’s sample center.
www.infineon.com/ce
25 50 75
Load \[%]
DEMO_24W_QUICKCHARGER
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Ictam quodita dolorepChargers
CoolMOS™ CE – package options for charger application
IPAK Short Lead and DPAK
Standard packages used in chargers
today with excellent reliability and
wide usage in the industry
SOT-223
Highly cost optimized surface-mount
package with small footprint. The
SOT-223 shows slightly worse thermal
performance than DPAK, however this
can be compensated with little eort
by oering a slightly larger copper
area (~15 mm²) around the package
for heatsinking on the PCB (see
page 14, lighting application)
IPAK Short Lead with
Isolation Stando:
Innovative package for charger
applications providing a defined
stando between package and PBC
ThinPAK 5x6
Very flat package (0.8 mm height)
package targeting slim charger
solutions. Bottom side cooling is
applied by many customers, but heat
sinking through the top side is also
possible
I2PAK
Larger package with better thermal
performance than IPAK short lead for
more than 20 W charger application.
The package carries higher cost yet
saves eorts in heat sinking
www.infineon.com/ce
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Soloreiust cone pratendeChargers
IPAK Short Lead with Isolation Stando
The new IPAK Short Lead with Mold Stopper will provide a defined stando
between package body and PCB for proper cleaning aer wave soldering to
avoid leakage current on board level. Mold bumps at the bottom of the package
body allow to fully insert the MOSFET into the PCB leaving a well-defined
isolation distance of 0.3 mm between the PCB and package body. Creepage
distance is increased and production yield is improved as area between
package and PCB can eectively be cleaned.
CoolMOS™ CE solutions for charger application
CoolMOS™ CE portfolio for charger – 700 V recommended for most designs
The CoolMOS™ CE series has been widely chosen by leading OEMs in notebook adapters. With ease-of-use, cost
competitiveness and short lead time as well as corresponding reference designs, customers can easily design CoolMOS™ CE
products in their adapters and have a faster time-to-market.
Value proposition of 600 V and 650 V CoolMOS™ CE for adapters
›
High eiciency exceeding values achieved with planar MOSFETs
›
Good thermals, especially for high density, small form factor designs
›
High breakdown voltage corridor – typical breakdown voltage by far exceeds specified max. value and is higher than
typical MOSFETs from other vendors
›
Easy-to-use product due to good controllability via gate resistor
Infineon’s 35 W adapter powered by IPD60R650CE:
Active-mode eiciency versus AC line input voltage
Infineon’s 35 W adapter reference design has been powered by IPD60R650CE, which oers an eiciency of more than
87 percent and a peak power of 45 W for 2 ms. The dynamic load response is only ±2 percent and standby power is below
100 mW. Customers could modify this board according to their requirements, gaining time-to-market. The board is
orderable through Infineon’s sample center.
89.0
88.5
88.0
87.5
87.0
86.5
86.0
R
G,ext
Oscillation due to di/dt
88.72
Oscillation due to dV/dt
C
par
R
88.45
88.06
87.70
90 115 230 264
AC line input voltage [VAC]
Optimization for EMI and eiciency/thermals
EMI and eiciency/thermals need a careful trade-o in notebook adapters
DS
– better eiciency/thermals require faster switching, which leads to worse
EMI, e.g., due to the oscillations triggered by a high dV/dt (di/dt). With a small
L
C
GD
G
G,in
C
GS
par
D
S
L
source
adjustment this challenge can be overcome. We recommend our customers to
optimize EMI when designing-in high voltage superjunction MOSFETs by: