Infineon CoolMOS User Manual

CoolMOS™ CE Selection Guide

High voltage MOSFETs for consumer applications
500 V, 600 V, 650 V, 700 V and 800 V

www.infineon.com/ce

Powering a green world with CoolMOS™ CE

2

Content

CoolMOS™ CE – overview 

CoolMOS™ CE – smartphone and tablet chargers 

CoolMOS™ CE – notebook adapters 

CoolMOS™ CE – TV sets 

CoolMOS™ CE for lighting applications 

CoolMOS™ CE – demonstrator boards 

CoolMOS™ CE – target topologies 

CoolMOS™ CE – product portfolio 

CoolMOS™ CE portfolio package overview 

CoolMOS™ CE – cross reference 

3

Ictam quodita dolorepCoolMOS™ CE

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

CoolMOS™ comes with a DPM of less than 0.1 and FIT rate of less than 0.15

DPM (data code related)

80

10-2014

11-2014

12-2014

01-2015

02-2015

03-2015

04-2015

05-2015

06-2015

07-2015

08-2015

09-2015

82

84

86

88

90

92

94

96

98

Wish date

10%

Wish date

Longer

CoolMOS™ CE – overview

CoolMOS™ CE is a product family launched by Infineon to address consumer and lighting applications. It oers
benefits in eiciency and thermal behavior versus standard MOSFETs and has been optimized for ease-of-use and cost­competitiveness, while at the same time delivering state-of-the-art performance and Infineon quality and supply security.
Powered by Infineon multi-source program, CoolMOS™ CE is determined to support customers’ success in various consumer
markets by full FAE (field application engineer) support, short lead time and fast quote response.

CoolMOS™ quality - benchmark in short term and long

Potentially additional
defects reported in 2016

based on 130 million

0

2011 2012 2013 2014 2015

+

FIT rate < 0.15

device hours

term reliability

CoolMOS™ technology is legendary in the industry
dierentiated for its high quality, which has been proven
over the past years across billions of devices shipped with
continuous improved DPM down to less than 0.10 DPM.
Infineon has implemented firm and proven measures
from the beginning with design-for-quality program
and continuous improvement in production. There is
a constant proactive collaboration among technology,
design, quality, reliability and manufacturing teams to
achieve this result. This eort is above and beyond the
fact that all Infineon sites are ISO/TS16949 certified.

CoolMOS™ supply chain – delivery reliability, flexibility and supply security

Our customers value CoolMOS™ not only for its technical merits but also for the outstanding delivery reliability: once a
CoolMOS™ order date is committed, more than 96 percent of orders are shipped at or before the committed date. And
CoolMOS™ orders are committed to more than 80 percent to the date that the customers request. Security of supply and
flexibility to demand changes are focus targets and enabled by a well balanced production network. For example more than
90 percent of our products are qualified for production in at least two back end locations and more than 80 percent of the
volumes in two wafer fabs. This enables CoolMOS™ supply chain to react fast to changes in customer and market requirements.

Delivery reliability: ship date = committed date Delivery capability: confirm customers’ wish date

≥ 96% of CoolMOS™ orders are shipped by the committed date and ≥ 80% of wish dates can be met

4

Wish date
+1 week

+2 weeks

6%

4%

80%

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Voltage range

This selection guide takes you to explore the advantages of CoolMOS™ CE in charger, adapter, TV and lighting applications

Soloreiust cone pratendeCoolMOS™ CE

CoolMOS™ CE

Charger

500 V

Product family and R

0.19 Ω – 3 Ω

600 V 650 V

range

DS(on)

0.19 Ω – 3.4 Ω 0.4 Ω – 1.5 Ω

Power supply topology and market segment

Adapter/charger

Quasi-resonant flyback

PC power

PFC/TTF 80+; PFC/LLC 90+

LCD TV

LLC half-bridge

LED retrofit/LED drivers

PFC/LLC/Non-isolated bulk

700 V

0.6 Ω – 2.1 Ω

LCD TV adapter

Quasi-resonant flyback

LED retrofit/LED drivers

Quasi-resonant flyback

800 V

0.31 Ω – 2.8 Ω

Reasons to choose CoolMOS™ CE

Non-technical benefits provided by CoolMOS™ CE

Product portfolio We own a broad portfolio covering five voltage classes in both through-hole and surface-mount packages.

Capacity We own the world’s largest capacity for power devices, with three dedicated frontends and four backends.

Thanks to factors such as the continued investment in our production facilities, we ensure a secure supply during a market
upswing.

Lead time We understand consumer and lighting market dynamics and oer a lead time for middle-sized orders of 4-6 weeks.

Delivery performance Our supply chain performance is constantly greater than or equal to 96 percent

(adhering to the customer committed date).

Quality Our field failure rates are as low as 0.1 PPM.

Design-in support We have a large field application engineering team dedicated to providing professional and flexible support for your design.

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5

Ictam quodita dolorepChargers

10 W design: IPS65R1K5CE

15 W design: IPS65R1K0CE

Level [dBµV/m]

1G

Horizontal direction Vertical direction Horizontal direction Vertical direction

CoolMOS™ CE – smartphone and tablet chargers

Chargers for smartphones and tablets as well as other mobile applications demand for a growing output power at same
or smaller form factors, leading to increasing power density, and stringent requirements on thermal management, EMI
emissions and overall system cost. For example, many OEMs request a device temperature less than 90°C with an open
case and close case temperature less than 50°C.

Infineon recommends its series of 700 V CoolMOS™ CE superjunction MOSFETs for this application, which are used by
leading charger OEMs and design houses in their charger applications. Compared to planar MOSFETs the 700 V CoolMOS™
CE oers reduced switching and thus higher eiciency while passing EMI standards and ringing requirements. Several
reference designs have been developed by Infineon to help customers to simplify charger design and thus providing fast
time-to-market (see reference design selection table at end of section).

Value proposition of 700 V CoolMOS™ CE:

›

High eiciency, meeting application requirements

›

More than enough safety margin in thermals, for 10 W-25 W chargers

›

Good EMI performance – meets the EMI EN55022B standard without extra design-in eort

›

Easy-to-use product due to good controllability via gate resistor

›

Large breakdown voltage of nominal 700 V (and additional guard band typical) for safety on voltage spikes

Infineon recommends CoolMOS™ CE in 700 V for charger applications to secure suicient margin for voltage spikes.
CoolMOS™ CE products are also available in 650 V and 600 V for use in less sensitive designs.

EN 55022 B radiated HF-field

30 MHz – 1 GHz position

40

30

20

10

0

-10
30M 50 60 80 100M

EN 55022 B RE 10 m OP EN 55022 B RE 10 m OP

200 300400 500 800 1G

Frequency [Hz]

40

30

20

10

Level [dBµV/m]

0

-10
30M 50 60 80 100M 200 300 400 500 800

EN 55022 B radiated HF-field

30 MHz – 1 GHz position

Frequency [Hz]

This figure shows the CoolMOS™ CE EMI performance in 10 W and 15 W charger applications. Maximum EMI limits are
indicated in the figure. CoolMOS™ CE could meet the EMI requirement thus oering design in flexibilities.

6

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15 W QC 2.0 charger powered by IPS70R2K0CE IPS70R2K0CE

86

100

IPS70R2K0CE

Competitor 700 V, 1.6 Ω

Eiciency [%]

92

100

Eiciency [%]

5 V 9 V 12 V

Soloreiust cone pratendeChargers

85.19

84.98

85.22

84.80

84

82.32

82

81.73

Competitor 700 V, 1.6 

80

25 50 75

Load [%]

Infineon CoolMOS™ CE oers higher eiciency and better thermals than planar MOSFETs: When replacing a 1.6 Ω planar
MOSFET with an Infineon 2.0 Ω CoolMOS™ CE in a 15 W QC 2.0 charger we measured ≥0.2 percent eiciency improvement. At the
same time, the MOSFET temperature was 7°C cooler, showing a clear benefit of using CoolMOS™ CE for charger applications.

Infineon’s 24 W QC 2.0 charger powered by IPS70R950CE Infineon’s 24 W quick charger

90

88

86

84

82

80

Also for 24 W quick chargers CoolMOS™ CE oers excellent eiciency, e.g., with the IPS70R950CE. Besides eiciency it
passes other spec requirements. The board is orderable through Infineon’s sample center.

www.infineon.com/ce

25 50 75

Load \[%]

DEMO_24W_QUICKCHARGER

7

Ictam quodita dolorepChargers

CoolMOS™ CE – package options for charger application

IPAK Short Lead and DPAK

Standard packages used in chargers
today with excellent reliability and
wide usage in the industry

SOT-223
Highly cost optimized surface-mount
package with small footprint. The
SOT-223 shows slightly worse thermal
performance than DPAK, however this
can be compensated with little eort
by oering a slightly larger copper
area (~15 mm²) around the package
for heatsinking on the PCB (see
page 14, lighting application)

IPAK Short Lead with
Isolation Stando:

Innovative package for charger
applications providing a defined
stando between package and PBC

ThinPAK 5x6

Very flat package (0.8 mm height)
package targeting slim charger
solutions. Bottom side cooling is
applied by many customers, but heat
sinking through the top side is also
possible

I2PAK

Larger package with better thermal
performance than IPAK short lead for
more than 20 W charger application.
The package carries higher cost yet
saves eorts in heat sinking

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8

Soloreiust cone pratendeChargers

IPAK Short Lead with Isolation Stando

The new IPAK Short Lead with Mold Stopper will provide a defined stando
between package body and PCB for proper cleaning aer wave soldering to
avoid leakage current on board level. Mold bumps at the bottom of the package
body allow to fully insert the MOSFET into the PCB leaving a well-defined
isolation distance of 0.3 mm between the PCB and package body. Creepage
distance is increased and production yield is improved as area between
package and PCB can eectively be cleaned.

CoolMOS™ CE solutions for charger application

CoolMOS™ CE portfolio for charger – 700 V recommended for most designs

R

DS(on)

[m]

600 > 20

950/1000 18-25

1400/1500 10-18

2000/2100 < 10

General

proposal

[W] TO-262

(IPAK)

IPI70R950CE IPS70R950CE IPSA70R950CE IPD70R950CE IPN70R1K0CE

For 18 W-25 W charger Standard package

TO-251

(IPAK Short Lead)

IPS70R600CE IPSA70R600CE IPD70R600CE

IPS70R1K4CE IPSA70R1K4CE IPD70R1K4CE IPN70R1K5CE

IPS70R2K0CE IPSA70R2K0CE IPD70R2K0CE IPL70R2K1CES

for charger

TO-251

(IPAK Short Lead with

ISO Stando)

Standard package
for charger

TO-252
(DPAK)

For slim charger For slim charger Low cost/thermal

ThinPAK 5x6 SOT-223

adjustment needed

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9

Ictam quodita dolorepNotebook adapters

DS

V

89.5

Eiciency [%]

Average eiciency

CoolMOS™ CE – notebook adapters

The CoolMOS™ CE series has been widely chosen by leading OEMs in notebook adapters. With ease-of-use, cost
competitiveness and short lead time as well as corresponding reference designs, customers can easily design CoolMOS™ CE
products in their adapters and have a faster time-to-market.

Value proposition of 600 V and 650 V CoolMOS™ CE for adapters

›

High eiciency exceeding values achieved with planar MOSFETs

›

Good thermals, especially for high density, small form factor designs

›

High breakdown voltage corridor – typical breakdown voltage by far exceeds specified max. value and is higher than
typical MOSFETs from other vendors

›

Easy-to-use product due to good controllability via gate resistor

Infineon’s 35 W adapter powered by IPD60R650CE:

Active-mode eiciency versus AC line input voltage

Infineon’s 35 W adapter reference design has been powered by IPD60R650CE, which oers an eiciency of more than
87 percent and a peak power of 45 W for 2 ms. The dynamic load response is only ±2 percent and standby power is below
100 mW. Customers could modify this board according to their requirements, gaining time-to-market. The board is
orderable through Infineon’s sample center.

89.0

88.5

88.0

87.5

87.0

86.5

86.0

R

G,ext

Oscillation due to di/dt

88.72

Oscillation due to dV/dt

C

par

R

88.45

88.06

87.70

90 115 230 264

AC line input voltage [VAC]

Optimization for EMI and eiciency/thermals

EMI and eiciency/thermals need a careful trade-o in notebook adapters

DS

– better eiciency/thermals require faster switching, which leads to worse
EMI, e.g., due to the oscillations triggered by a high dV/dt (di/dt). With a small

L

C

GD

G

G,in

C

GS

par

D

S

L

source

adjustment this challenge can be overcome. We recommend our customers to
optimize EMI when designing-in high voltage superjunction MOSFETs by:

›

C

Adding additional drain-source capacitor CDS, e.g., 100 pF

›

Adjusting external RG, e.g., 5 Ω–30 Ω

›

Optimizing PCB layout for short path from controller to MOSFET gate and a
small loop inductance

›

Adjusting EMI filter (only if other measures are insuicient)

27 mm

35 mm 89 mm

REF-35W Adapter

10

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