®
SIPMOS
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Type
BUZ 73 L
Maximum Ratings
Parameter
V
DS
200 V
I
D
7 A
Continuous drain current
T
= 28 ˚C
C
Pulsed drain current
= 25 ˚C
T
C
Avalanche current,limited by
Avalanche energy,periodic limited by
T
jmax
T
jmax
Avalanche energy, single pulse
I
= 7 A,
D
L
= 3.67 mH,
V
= 50 V,
DD
T
= 25 ˚C
j
R
GS
= 25
Ω
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
R
DS(on
0.4
Ω
BUZ 73L
Pin 1
G
)
Package
PG-TO-220 AB
Symbol
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
Pin 2
D
Ordering Code
C67078-S1328-A2
Values
7
28
7
6.5
120
±
20
Class 1
Pin 3
S
Unit
A
mJ
V
Power dissipation
= 25 ˚C
T
C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
P
T
T
R
R
tot
j
stg
thJC
thJA
40
-55 ... + 150
-55 ... + 150
≤
3.1
75
E
55 / 150 / 56
W
˚C
K/W
Rev. 2.1 Page 1 2005-02-15
BUZ 73L
Electrical Characteristics,
Parameter
Static Characteristics
at
T
j
Drain- source breakdown voltage
V
= 0 V,
GS
= 0.25 mA,
I
D
= 25 ˚C
T
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 200 V,
= 200 V,
V
V
= 0 V,
GS
= 0 V,
GS
T
= 25 ˚C
j
= 125 ˚C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
= 5 V,
GS
= 3.5 A
I
D
= 25˚C, unless otherwise specified
Symbol
min.
V
(BR)DSS
200
V
GS(th)
1.2
I
DSS
-
-
I
GSS
-
R
DS(on)
-
Values
typ. max.
-
1.6
0.1
10
10
0.3
-
2
1
100
100
0.4
Unit
V
µA
nA
Ω
Rev. 2.1 Page 2 2005-02-15
BUZ 73L
Electrical Characteristics,
Parameter
Dynamic Characteristics
at
Transconductance
V
DS
I
≥
2
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
= 0 V,
GS
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
= 0 V,
GS
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
R
GS
= 30 V,
Ω
= 50
V
= 5 V,
GS
I
D
= 3 A
Rise time
V
DD
R
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
D
= 3 A
Turn-off delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
D
= 3 A
Fall time
V
DD
R
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
D
= 3 A
T
= 25˚C, unless otherwise specified
j
Symbol
g
fs
= 3.5 A
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
min.
5
-
-
-
-
-
-
-
Values
typ. max.
6.5 -
630 840
120 200
60 90
15 20
60 90
100 130
40 50
Unit
S
pF
ns
Rev. 2.1 Page 3 2005-02-15
BUZ 73L
Electrical Characteristics,
Parameter
Reverse Diode
at
T
= 25˚C, unless otherwise specified
j
Inverse diode continuous forward current
T
= 25 ˚C
C
Inverse diode direct current,pulsed
= 25 ˚C
T
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 14 A
F
Reverse recovery time
V
= 100 V,
R
=
I
l
i
t
= 100 A/µs
d
S,
/d
F
F
Reverse recovery charge
= 100 V,
V
R
d
l
S,
/d
i
t
= 100 A/µs
F
I
=
F
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
min.
-
-
-
-
-
Values
typ. max.
-
-
1.1
140
0.7
7
28
1.7
-
-
Unit
A
V
ns
µC
Rev. 2.1 Page 4 2005-02-15
BUZ 73L
Power dissipation
ƒ
P
P
(
T
=
tot
tot
45
W
35
30
25
20
15
10
)
C
5
0
0
20
40
60
80
100
120
Drain current
ƒ
I
(
T
=
D
parameter:
I
D
˚C
160
T
C
7.5
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
)
C
≥
V
A
0
20
GS
5 V
40
60
80
100
120
˚C
160
T
C
Safe operating area
ƒ
=
I
D
parameter:
I
D
10
10
10
10
)
(
V
DS
D
= 0.01
2
A
1
0
-1
0
10
V
=
DS(on)
R
, T
/
DS
10
= 25˚C
C
I
D
1
10
DC
2
t
= 15.0µs
p
100 µs
1 ms
10 ms
V
DS
Transient thermal impedance
ƒ
=
1
0
-1
-2
-3
10
(
t
-7
)
p
D = t
T
/
p
single pulse
-6
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-5
-4
-3
-2
10
10
10
10
t
-1
10 0 s
p
Z
th JC
parameter:
10
K/W
Z
thJC
10
10
10
V
10
Rev. 2.1 Page 5 2005-02-15
BUZ 73L
Typ. output characteristics
ƒ(
=
I
D
parameter:
I
D
V
16
12
10
A
8
6
4
2
0
DS
0
)
= 80 µs
t
p
P
= 40W
tot
l
i
h
f
j
e
g
k
2
4
Typ. drain-source on-resistance
ƒ(
=
R
DS (on)
parameter:
1.3
Ω
V
[V]
GS
a 2.0
b 2.5
d
c 3.0
d 3.5
e 4.0
f 4.5
g 5.0
h 5.5
c
i 6.0
j 7.0
k 8.0
l 10.0
b
a
6
8
V
12
V
DS
R
DS (on)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
)
I
D
V
GS
a
V
V
[V] =
[V] =
GS
GS
a
a
b
c
2.0
2.5
3.0
0
d
3.5
4.0
2
4
4.5
b
e
f
g
5.5
h
6.0
8
5.0
6
7.0
c
d
e
f
g
h
i
j
k
i
j
k
8.0
10.0
10
A
13
I
D
Typ. transfer characteristics
t
A
8
6
4
2
0
I
0
p
x
D
= 80 µs
R
DS(on)max
1
2
3
4
parameter:
≥
V
2 x
DS
18
I
14
D
12
10
I
f (V
=
D
5
)
GS
6
7
8
V
10
V
GS
Typ. forward transconductance
parameter:
≥
V
DS
g
fs
2 x
12
S
10
t
ID x R
9
8
7
6
5
4
3
2
1
0
0
= 80 µs,
p
DS(on)max
2
4
6
g
f
(
I
=
10
)
D
12
A
15
I
D
fs
8
Rev. 2.1 Page 6 2005-02-15
BUZ 73L
Drain-source on-resistance
ƒ
=
R
DS (on)
parameter:
1.3
Ω
1.1
R
DS (on)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60
)
(
T
j
= 3.5 A,
I
D
-20
20
V
GS
= 5 V
98%
typ
60
100
Gate threshold voltage
ƒ
=
-60
)
(
T
j
=
V
GS
-20
,
DS
20
= 1 mA
I
D
98%
typ
2%
60
100
˚C
160
T
j
V
V
GS (th)
parameter:
4.6
V
4.0
V
GS(th)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
˚C
160
T
j
Typ. capacitances
10
pF
10
10
10
DS
4
3
2
1
)
= 0V,
V
GS
0
5
C = f (V
parameter:
C
10
f
= 1MHz
15
20
25
30
Forward characteristics of reverse diode
ƒ
=
I
F
parameter:
I
F
C
iss
C
oss
C
rss
V
40
V
DS
(
10
10
10
10
)
V
SD
Tj, t
= 80 µs
p
2
A
1
0
= 25 ˚C typ
T
j
T
= 150 ˚C typ
j
T
= 25 ˚C (98%)
j
T
= 150 ˚C (98%)
j
-1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
Rev. 2.1 Page 7 2005-02-15
Avalanche energy
= 7 A,
parameter:
= 25
R
GS
I
D
Ω
, L = 3.67 mH
E
V
AS
DD
=
ƒ
)
(
T
j
= 50 V
Typ. gate charge
ƒ
=
V
GS
(
parameter:
Q
Gate
I
D puls
)
BUZ 73L
= 63 A
130
mJ
110
E
AS
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100
Drain-source breakdown voltage
ƒ
=
V
(BR)DSS
)
(
T
j
120
˚C
16
V
V
GS
12
V
20
0,2
30
DS max
40
50
60
10
8
6
4
2
0
160
T
j
0
10
0,8
70
V
DS max
80
nC
100
Q
Gate
240
V
230
V
(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
˚C
160
T
j
Rev. 2.1 Page 8 2005-02-15
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