INFINEON BUZ 73L User Manual
®
SIPMOS
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Type
BUZ 73 L
Maximum Ratings
Parameter
V
DS
200 V
I
D
7 A
Continuous drain current
T
= 28 ˚C
C
Pulsed drain current
= 25 ˚C
T
C
Avalanche current,limited by
Avalanche energy,periodic limited by
T
jmax
T
jmax
Avalanche energy, single pulse
I
= 7 A,
D
L
= 3.67 mH,
V
= 50 V,
DD
T
= 25 ˚C
j
R
GS
= 25
Ω
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
R
DS(on
0.4
Ω
BUZ 73L
Pin 1
G
)
Package
PG-TO-220 AB
Symbol
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
Pin 2
D
Ordering Code
C67078-S1328-A2
Values
7
28
7
6.5
120
±
20
Class 1
Pin 3
S
Unit
A
mJ
V
Power dissipation
= 25 ˚C
T
C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
P
T
T
R
R
tot
j
stg
thJC
thJA
40
-55 ... + 150
-55 ... + 150
≤
3.1
75
E
55 / 150 / 56
W
˚C
K/W
Rev. 2.1 Page 1 2005-02-15
BUZ 73L
Electrical Characteristics,
Parameter
Static Characteristics
at
T
j
Drain- source breakdown voltage
V
= 0 V,
GS
= 0.25 mA,
I
D
= 25 ˚C
T
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 200 V,
= 200 V,
V
V
= 0 V,
GS
= 0 V,
GS
T
= 25 ˚C
j
= 125 ˚C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
= 5 V,
GS
= 3.5 A
I
D
= 25˚C, unless otherwise specified
Symbol
min.
V
(BR)DSS
200
V
GS(th)
1.2
I
DSS
-
-
I
GSS
-
R
DS(on)
-
Values
typ. max.
-
1.6
0.1
10
10
0.3
-
2
1
100
100
0.4
Unit
V
µA
nA
Ω
Rev. 2.1 Page 2 2005-02-15
BUZ 73L
Electrical Characteristics,
Parameter
Dynamic Characteristics
at
Transconductance
V
DS
I
≥
2
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
= 0 V,
GS
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
= 0 V,
GS
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
R
GS
= 30 V,
Ω
= 50
V
= 5 V,
GS
I
D
= 3 A
Rise time
V
DD
R
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
D
= 3 A
Turn-off delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
D
= 3 A
Fall time
V
DD
R
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
D
= 3 A
T
= 25˚C, unless otherwise specified
j
Symbol
g
fs
= 3.5 A
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
min.
5
-
-
-
-
-
-
-
Values
typ. max.
6.5 -
630 840
120 200
60 90
15 20
60 90
100 130
40 50
Unit
S
pF
ns
Rev. 2.1 Page 3 2005-02-15
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