INFINEON BUZ 73AL User Manual

SIPMOS

®

Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Type

BUZ 73 AL

Maximum Ratings Parameter

V

DS

200 V

I

D

5.5 A

Continuous drain current

T

= 37 ˚C

C

Pulsed drain current

= 25 ˚C

T

C

Avalanche current,limited by

Avalanche energy,periodic limited by

T

jmax

T

jmax

Avalanche energy, single pulse

I

= 7 A,

D

L

= 3.67 mH,

V

= 50 V,

DD

T

= 25 ˚C

j

R

GS

= 25

Ω

Gate source voltage

ESD-Sensitivity HBM as per MIL-STD 883

R

DS(on

0.6

Ω

BUZ 73AL

Pin 1

G

)

Package

PG-TO-220 AB

Symbol

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

Pin 2

Pb-free

Yes

Values

5.5

22

7

6.5

120

±

20

Class 1

Pin 3

D

S

Unit

A

mJ

V

Power dissipation

= 25 ˚C

T

C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

P

T

T

R

R

tot

j

stg

thJC

thJA

40

-55 ... + 150

-55 ... + 150

≤

3.1

75

E

55 / 150 / 56

W

˚C

K/W

Rev. 2.2 Page 1 2007-01-16

BUZ 73AL

Electrical Characteristics,

Parameter

Static Characteristics

at

T

j

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 ˚C

j

Gate threshold voltage

V

V

=

GS

DS, ID

= 1 mA

Zero gate voltage drain current

V

DS

V

DS

= 200 V, = 200 V,

V V

= 0 V,

GS

= 0 V,

GS

T

= 25 ˚C

j

T

= 125 ˚C

j

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

Drain-Source on-resistance

V

= 5 V,

GS

= 3.5 A

I

D

= 25˚C, unless otherwise specified

Symbol

min.

V

(BR)DSS

200

V

GS(th)

1.2

I

DSS

-

-

I

GSS

-

R

DS(on)

-

Values

typ. max.

-

1.6

0.1

10

10

0.5

-

2

1

100

100

0.6

Unit

V

µA

nA

Ω

Rev. 2.2 Page 2 2007-01-16

BUZ 73AL

Electrical Characteristics,

Parameter

Dynamic Characteristics

at

Transconductance

V

DS

I

≥

2

D * RDS(on)max, ID

*

Input capacitance

V

= 0 V,

GS

V

DS

= 25 V,

f

= 1 MHz

Output capacitance

V

= 0 V,

GS

V

DS

= 25 V,

f

= 1 MHz

Reverse transfer capacitance

V

= 0 V,

GS

V

DS

= 25 V,

f

= 1 MHz

Turn-on delay time

V

DD

R

GS

= 30 V, = 50

Ω

V

= 5 V,

GS

I

D

= 3 A

Rise time

V

DD

R

GS

= 30 V, = 50

Ω

V

= 5 V,

GS

I

D

= 3 A

Turn-off delay time

V

DD

R

GS

= 30 V,

Ω

= 50

V

= 5 V,

GS

I

D

= 3 A

Fall time

V

DD

R

GS

= 30 V, = 50

Ω

V

= 5 V,

GS

I

D

= 3 A

T

= 25˚C, unless otherwise specified

j

Symbol

g

fs

= 3.5 A

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

min.

5

-

-

-

-

-

-

-

Values

typ. max.

6.5 -

630 840

120 200

60 90

15 20

60 90

100 130

40 50

Unit

S

pF

ns

Rev. 2.2 Page 3 2007-01-16

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