INFINEON BUZ 341 User Manual
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Type
V
DS
I
D
R
DS(on)
BUZ 341 200 V 33 A 0.07
Maximum Ratings
Ω
BUZ 341
Pin 1 Pin 2 Pin 3
G D S
Package
TO-218 AA C67078-S3128-A2
Ordering Code
Parameter
Continuous drain current
T
= 28 ˚C
C
Pulsed drain current
T
= 25 ˚C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
Avalanche energy, single pulse
I
= 33 A,
D
L
= 1.09 mH,
V
DD
= 50 V,
T
= 25 ˚C
j
R
= 25
GS
Ω
Gate source voltage
Power dissipation
T
= 25 ˚C
C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
T
jmax
Symbol Values Unit
I
D
33
I
Dpuls
132
I
E
E
AR
AR
AS
33
16 mJ
790
V
GS
P
tot
±
170
T
T
R
R
j
stg
thJC
thJA
-55 ... + 150 ˚C
-55 ... + 150
≤
0.74 K/W
75
DIN humidity category, DIN 40 040 E
A
20 V
W
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Data Sheet 1 05.99
BUZ 341
Electrical Characteristics,
at
T
= 25˚C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
= 0.25 mA,
D
T
= 25 ˚C
j
Gate threshold voltage
V
GS
V
=
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 200 V,
= 200 V,
V
V
GS
GS
= 0 V,
= 0 V,
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-resistance
V
= 10 V,
GS
I
= 21 A
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
200 - -
2.1 3 4
-
-
0.1
10
1
100
- 10 100
-
0.06 0.07
V
µA
nA
Ω
Data Sheet 2 05.99
BUZ 341
Electrical Characteristics,
at
T
= 25˚C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
≥
DS
2
I
*
D * RDS(on)max, ID
= 21 A
Input capacitance
V
GS
= 0 V,
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
GS
= 0 V,
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
GS
= 0 V,
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
= 3 A
Rise time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
= 3 A
Turn-off delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
= 3 A
Fall time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
= 3 A
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
S
15 23 -
pF
- 2600 3900
- 500 750
- 230 350
ns
- 40 60
- 110 170
- 450 680
- 160 240
Data Sheet 3 05.99
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