INFINEON BTS 740S2 User Manual

PROFET® BTS 740S2

Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense

Product Summary Package

Operating Voltage V

bb(on)

5.0...34V

P-DSO-20-9

Active channels one two parallel On-state Resistance R Nominal load current I Current limitation I

ON L(NOM) L(SCr)

Ω

30m

5.5A 8.5A 24A 24A

15m

Ω

General Description

•

N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input,

diagnostic feedback and proportional load current sense monolithically integrated in Smart SIPMOS technology.

•

Fully protected by embedded protection functions

Applications

•

µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads

•

All types of resistive, inductive and capacitve loads

•

Most suitable for loads with high inrush currents, so as lamps

•

Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

•

CMOS compatible input

•

Undervoltage and overvoltage shutdown with auto-restart and hysteresis

•

Fast demagnetization of inductive loads

•

Logic ground independent from load ground



Protection Functions

•

Short circuit protection

•

Overload protection

•

Current limitation

•

Thermal shutdown

•

Overvoltage protection (including load dump) with external

resistor

•

Reverse battery protection with external resistor

•

Loss of ground and loss of V

•

Electrostatic discharge protection (ESD)

protection

bb

Diagnostic Functions

• Proportinal load current sense

• Diagnostic feedback with open drain output

• Open load detection in OFF-state with external resistor

• Feedback of thermal shutdown in ON-state

IN1 ST1 IS1

IN2 ST2 IS2

Vbb

Logic

Channel

1

Logic

Channel

2

PROFET

GND

OUT 1

Load 1

OUT 2

Load 2

Data Sheet 1 1999-06-16

Functional diagram

g

y

O

BTS 740S2

IN1

ST1

IS1

GND1

IN2

ST2

IS2

GND2

overvoltage

protection

internal

e suppl

volta

ESD

gate

control

+

charge

logic

pump

temperature

sensor

Open load

detection

Current

sense

Control and protection circuit

of

channel 2

current limit

clamp for

inductive load

R

1

GND1

Channel 1

PROFET

VBB

OUT1

LOAD

OUT2

Pin Definitions and Functions

Pin Symbol Function

1,10, 11,12, 15,16, 19,20 3IN1 7 IN2 logic high signal 17,18 OUT1 13,14 OUT2 of channel 1,2. Both pins of each output have

4 ST1 8 ST2 open drain, invers to input level 2 GND1 6 GND2 5IS1 9IS2

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

Input 1,2, activates channel 1,2 in case of

Output 1,2, protected high-side power output

to be connected in parallel for operation according ths spec (e.g. k

). Design the wiring

ilis

for the max. short circuit current

Diagnostic feedback 1,2 of channel 1,2,

Ground 1 of chip 1 (channel 1) Ground 2 of chip 2 (channel 2) Sense current output 1,2; proportional to the

load current, zero in the case of current limitation of the load current

Pin configuration

(top view)

V

1 • 20 V

bb

GND1 2 19 V

IN1 3 18 OUT1

ST1 4 17 OUT1

IS1 5 16 V

GND2 6 15 V

IN2 7 14 OUT2

ST2 8 13 OUT2

IS2 9 12 V Vbb10 11 V

bb bb

Data Sheet 2 1999-06-16

BTS 740S2

)

T

I

E

I

E

)

(

)

Maximum Ratings at

T

= 25˚C unless otherwise specified

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

= -40 ...+150˚C

j,start

Load current (Short-circuit current, see page 5) Load dump protection1)

2)

R

= 2 Ω,

I

t

= 200 ms; IN = low or high,

d

each channel loaded with

V

LoadDump

R

=

= 7.0 Ω,

L

V

+

V

,

V

s

= 13.5 V

A

Operating temperature range Storage temperature range

Power dissipation (DC (all channels active)

4)

= 25˚C :

a

= 85˚C :

a

V

bb

V

bb

I

L

V

Load dump

T

j

T

stg

P

tot

43 V 34 V

self-limited A

3

)

-40 ...+150

60 V

˚C

-55 ...+150

3.8

W

2.0

Maximal switchable inductance, single pulse V

= 12V,

bb

= 5.5 A, = 8.5 A,

see diagrams on page 10

Electrostatic discharge capability (ESD

Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5kΩ; C=100pF

Input voltage (DC) Current through input pin (DC)

Current through status pin (DC) Current through current sense pin (DC)

see internal circuit diagram page 9

T

= 150˚C4),

j,start

= 370 mJ, 0 Ω one channel:

AS

= 790 mJ, 0 Ω two parallel channels:

AS

out to all other pins shorted:

IN:

ST, IS:

Z

V

V I

I I

IN ST IS

L

ESD

IN

1816mH

1.0

kV

4.0

8.0

-10 ... +16 V ±2.0

mA

±5.0

±14

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ Max

Thermal resistance junction - soldering point

junction - ambient

4)

4),5)

each channel:

one channel active:

R R

thjs thja

all channels active:

1)

Supply voltages higher than V resistor for the GND connection is recommended.

2)

R

= internal resistance of the load dump test pulse generator

I

3)

V

Load dump

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air. See page 15

5)

Soldering point: upper side of solder edge of device pin 15. See page 15

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins (a 150Ω

bb(AZ)

2

(one layer, 70µm thick) copper area for V

-- -- 12

--

40 33

K/W

--

bb

Data Sheet 3 1999-06-16

BTS 740S2

T

j

g

T

j

Electrical Characteristics

Parameter and Conditions, each of the two channels Symbol Values Unit

at Tj = -40...+150˚C,

Load Switching Capabilities and Characteristics

V

= 12 V unless otherwise specified

bb

min typ max

On-state resistance (Vbb to OUT);

each channel,

two parallel channels,

IL = 5 A

T

= 25˚C :

j

= 150˚C:

j

T

= 25˚C:

j

Output voltage drop limitation at small load currents,

I

= 0.5 A

L

see page 14

T

=-40...+150˚C:

j

Nominal load current one channel active:

two parallel channels active:

Device on PCB

6)

T

,

a

= 85˚C,

T

≤ 150˚C

j

Output current while GND disconnected or pulled up;

V

= 30 V,

bb

see diagram page 9; (not tested specified by design)

Turn-on time7) IN to 90% Turn-off time IN

R

= 12 Ω

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 0,

IN

V

OUT

V V

7)

OUT

7) OUT

,

R

,

R

= 12 Ω:

L

= 12 Ω:

L

to 10%

V

OUT

: :

R

V I

I

t t

d

-dV/dt

ON

ON(NL)

L(NOM)

L(GNDhigh)

on off

V

/dt

on

off

--

27 54

14

30 60

15

mΩ

-- 50 -- mV

4.9

7.8

5.5

8.5

-- A

-- -- 8 mA

25 25

70 80

150

200

µs

0.1 -- 1 V/µs

Operating Parameters

Operating voltage Undervoltage shutdown Undervoltage restart

8)

=-40...+25˚C:

T

=+150˚C:

j

V

bb(on)

V

bb(under)

V

bb(u rst)

5.0 -- 34 V

3.2 -- 5.0 V

-- 4.5 5.5

6.0

Undervoltage restart of charge pump see dia

Undervoltage hysteresis

∆

V

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis ∆

6)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 15

)

7

See timing diagram on page 11.

8)

At supply voltage increase up to

ram page 13

V

=

bb(u rst)

-

V

bb(under)

=-40...+25˚C:

T

=150˚C:

j

V

∆

V V

2

(one layer, 70µm thick) copper area for V

V

= 4.7 V typ without charge pump,

bb

bb(ucp)

V

bb(under)

bb(over) bb(o rst)

V

bb(over)

V

--

4.7

--

-- 0.5 -- V

34 -- 43 V 33 -- -- V

-- 1 -- V

≈

V

OUT

bb

- 2 V

6.5

7.0

bb

Data Sheet 4 1999-06-16

V

BTS 740S2

T

j

Parameter and Conditions, each of the two channels Symbol Values Unit

at Tj = -40...+150˚C,

V

= 12 V unless otherwise specified

bb

min typ max

Overvoltage protection

I

=40 mA

bb

Standby current V

IN

see diagram page 10

= 0;

10

Leakage output current (included in

V

IN = 0

Operating current

I

=

I

+

GND

GND1

I

GND2

9)

T

=+25...+150˚C:

)

11)

,

V

= 5V,

IN

j

T

=-40˚C...25˚C:

j

I

bb(off)

, one channel on:

two channels on:

Protection Functions

Current limit,

(see timing diagrams, page 12)

Repetitive short circuit current limit,

T

=

T

each channel

j

jt

two parallel channels

(see timing diagrams, page 12)

Initial short circuit shutdown time

(see timing diagrams on page 12)

T

Output clamp (inductive load switch off)

at V

ON(CL)

= Vbb - V

OUT

,

I

L

= 40 mA

=25˚C...150˚C:

T

j

Thermal overload trip temperature Thermal hysteresis

=-40:

T

=150˚C:

j

)

=-40˚C:

T

j

=25˚C:

T

j

=+150˚C:

T

j

=25˚C:

j,start

12)

=-40˚C:

T

j

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

I

L(lim)

I

L(SCr)

t

off(SC)

V

ON(CL)

T

jt

∆

T

jt

41 43

--

47

24

--

52

8

30

µA

50

-- -- 20 µA

--

48 40 31

--

1.2

2.4

56 50 37

24 24

36mA

65 58 45

--

-- 2.0 -- ms

41 43

47

--

52

150 -- -- ˚C

-- 10 -- K

V

A

V

Reverse Battery

Reverse battery voltage Drain-source diode voltage (V

= - 4.0 A,

I

L

9)

Supply voltages higher than V resistor in the GND connection is recommended). See also circuit diagram page 9.

10)

Measured with load; for the whole device; all channels off

11)

Add

)

12

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest V

ON(CL)

13)

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 9).

T

j = +150˚C

I

, if

I

ST

> 0

ST

13)

-

V

bb

out

bb(AZ)

bb

require an external current limit for the GND and status pins (a 150 Ω

)

> V

V

-

V

ON(CL)

ON

in table of protection functions and

-- -- 32 V

-- 600 -- mV

Data Sheet 5 1999-06-16

INFINEON BTS 740S2 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual