INFINEON BTS721L1 User Manual

PROFET

Smart Four Channel Highside Power Switch

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

(including load dump)

•

Fast demagnetization of inductive loads

1

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis

•

Open drain diagnostic output

)

• Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

protection

bb

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays and discrete circuits

Product Summary

Overvoltage Protection V

Operating voltage

V

active channels: one

On-state resistance R Nominal load current I

Current limitation I

100 50 25

ON

L(NOM)

L(SCr)

2.9 4.3 6.3 A

8 8 8 A

P-DSO-20

43 V

bb(AZ)

5.0 ... 34 V

bb(on)

two parallel four parallel

®

BTS721L1

mΩ

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Pin Definitions and Functions Pin Symbol Function

1,10, 11,12, 15,16, 19,20

V

Positive power supply voltage. Design the

bb

wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low

thermal resistance 3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of 5 IN2 logic high signal 7 IN3 9 IN4 18 OUT1 Output 1 .. 4, protected high-side power output 17 OUT2 of channel 1 .. 4. Design the wiring for the 14 OUT3 max. short circuit current 13 OUT4 4 ST1/2 Diagnostic feedback 1/2 of channel 1 and

channel 2, open drain, low on failure 8 ST3/4 Diagnostic feedback 3/4 of channel 3 and

channel 4, open drain, low on failure 2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) 6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

Pin configuration (top view)

V

1 • 20 V

bb

GND1/2 2 19 Vbb

IN1 3 18 OUT1

ST1/2 4 17 OUT2

IN2 5 16 Vbb

GND3/4 6 15 Vbb

IN3 7 14 OUT3

ST3/4 8 13 OUT4

IN4 9 12 Vbb Vbb 10 11 Vbb

bb

1)

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 of 15 2003-Oct-01

BTS721L1 Block diagram

Four Channels; Open Load detection in on state;

+ V

Voltage

source

V

Logic

Voltage

sensor

3

IN1

IN2

5

4

ST1/2

ESD

Logic

Overvoltage

protection

Level shifter

Rectifier 1

Charge

pump 1

Charge

pump 2

Current

limit 1

Current

limit 2

Gate 1

protection

Limit for unclamped ind. loads 1

Open load

Short to Vbb

detection 1

Gate 2

protection

Temperature

sensor 1

bb

Channel 1

OUT1

Channel 2

Leadframe

18

Signal GND

Chip 1

Signal GND

Chip 2

2

8

6

7

9

GND1/2

IN3

IN4

ST3/4

GND3/4

Chip 1

PROFET

Chip 2

Level shifter

Rectifier 2

Short to Vbb

Logic and protection circuit of chip 2

(equivalent to chip 1)



Limit for unclamped ind. loads 2

Open load

detection 2

Temperature

sensor 2

OUT2

RR

O1

RR

O3

GND1/2

+ V

Channel 3

OUT3

Channel 4

OUT4

GND3/4

O2

bb

O4

17

Load

Load GND

Leadframe

14

13

Load

Load GND

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Semiconductor Group 2 2003-Oct-01

BTS721L1

Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

Vbb 34 V

Load current (Short-circuit current, see page 5) IL self-limited A Load dump protection2) V

3)

R

= 2 Ω, td = 200 ms; IN = low or high,

I

LoadDump

each channel loaded with R Operating temperature range Storage temperature range Power dissipation (DC)5 Ta = 25°C:

= UA + Vs, UA = 13.5 V

= 4.7 Ω,

L

V

Load

4

)

dump

Tj T

stg

P

3.7

tot

(all channels active) Ta = 85°C: Inductive load switch-off energy dissipation, single pulse

V

= 12V, T

bb

j,start

= 150°C5),

IL = 2.9 A, ZL = 58 mH, 0 Ω one channel:

EAS IL = 4.3 A, ZL = 58 mH, 0 Ω two parallel channels: IL = 6.3 A, ZL = 58 mH, 0 Ω four parallel channels:

see diagrams on page 9 and page 10 Electrostatic discharge capability (ESD)

V

1.0 kV

ESD

(Human Body Model) Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) Current through status pin (DC)

IIN

IST

see internal circuit diagram page 8 Thermal resistance

junction - soldering point

5),6)

each channel: junction - ambient5) one channel active: all channels active:

R

thjs

R

thja

60 V

-40 ...+150

°C

-55 ...+150 W

1.9

0.3

J

0.65

1.5

±2.0

mA

±5.0

15 K/W 41 34

2)

Supply voltages higher than V

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.

3)

RI = internal resistance of the load dump test pulse generator

4)

V

Load dump

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air. See page 15

6)

Soldering point: upper side of solder edge of device pin 15. See page 15

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for Vbb

Semiconductor Group 3 2003-Oct-01

BTS721L1

Electrical Characteristics

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

min typ max

On-state resistance (Vbb to OUT) IL = 2 A each channel, Tj = 25°C:

T

= 150°C:

j

two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: Nominal load current one channel active:

two parallel channels active: four parallel channels active:

Device on PCB5), Ta = 85°C, Tj ≤ 150°C Output current while GND disconnected or pulled

up; V Turn-on time to 90% V Turn-off time to 10% V

= 30 V, V

bb

= 0, see diagram page 9

IN

OUT OUT

RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% V

OUT

, R

= 12 Ω, Tj =-40...+150°C:

L

Slew rate off 70 to 40% V

, RL = 12 Ω, Tj =-40...+150°C:

OUT

RON

I

:

ton

:

t

2.5

L(NOM)

L(GNDhigh)

off

-- -- 10 mA

--

3.8

5.9

80 80

85

170

43 22

2.9

100 200

50 25

-- A

4.3

6.3

200 200

400

dV/dton 0.1 -- 1 V/µs

-dV/dt

0.1 -- 1 V/µs

off

mΩ

µs

Operating Parameters Operating voltage7) Tj =-40...+150°C: V

Undervoltage shutdown Tj =-40...+150°C: V Undervoltage restart Tj =-40...+25°C:

V

5.0 -- 34 V

bb(on) bb(under) bb(u rst)

3.5 -- 5.0 V

-- -- 5.0 Tj =+150°C: Undervoltage restart of charge pump

V

bb(ucp)

-- 5.6 7.0 V

see diagram page 14 Tj =-40...+150°C: Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis Tj =-40...+150°C: ∆V Overvoltage protection I

= 40 mA

bb

8)

Tj =-40...+150°C:

Standby current, all channels off Tj =25°C: V

= 0 T

IN

7)

At supply voltage increase up to V

8)

see also V

in circuit diagram on page 8.

ON(CL)

= 5.6 V typ without charge pump, V

bb

=150°C:

j

∆V

bb(under)

34 -- 43 V

bb(over)

33 -- -- V

bb(o rst)

-- 0.5 -- V

42 47 -- V

--

V

bb(AZ)

I

bb(off)

bb(over)

V

7.0

-- 0.2 -- V

≈Vbb - 2 V

OUT

--

28 44

60 70

µA

Semiconductor Group 4 2003-Oct-01

BTS721L1

Parameter and Conditions, each of the four channels Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Leakage output current (included in I

= I

GND1/2

+ I

= 5V, Tj =-40...+150°C

IN

, one channel on:

GND3/4

VIN = 0

Operating current 9), V I

GND

four channels on:

bb(off)

)

I

-- -- 12 µA

L(off)

I

GND

min typ max

--

2 8

312mA

Protection Functions

Initial peak short circuit current limit, (see timing

diagrams, page 12)

each channel,

10)

=-40°C:

j

T

=25°C:

Tj

=+150°C:

Tj

I

L(SCp)

11

9 5

18 14

8

25 22 14

A

two parallel channels twice the current of one channel

four parallel channels four times the current of one channel Repetitive short circuit current limit, Tj = Tjt each channel two parallel channels four parallel channels

(see timing diagrams, page 12)

Initial short circuit shutdown time T T

(see page 12 and timing diagrams on page 12)

Output clamp (inductive load switch off) at V

ON(CL)

= Vbb - V

OUT

j,start j,start

11)

=-40°C:

= 25°C:

I

--

L(SCr)

t

V

--

off(SC)

-- 47 -- V

ON(CL)

--

8 8 8

3.8 3

--

----ms

A

Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis

∆

Tjt -- 10 -- K

Reverse Battery

Reverse battery voltage Drain-source diode voltage (V

= - 2.9 A, Tj = +150°C

IL

9)

Add I

10)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

11)

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

V

12)

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

ST

ON(CL)

, if IST > 0

12)

-Vbb -- -- 32 V

out

> V

bb

)

-VON -- 610 -- mV

Semiconductor Group 5 2003-Oct-01

INFINEON BTS721L1 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual