INFINEON BTS650P User Manual
Data Sheet BTS650P
)
Smart Highside High Current Power Switch ReversaveÔ
Features
·
Overload protection
·
Current limitation
·
Short circuit protection
·
Overtemperature protection
·
Overvoltage protection (including load dump)
·
Clamp of negative voltage at output
·
Fast deenergizing of inductive loads
·
Low ohmic inverse current operation
·
ReversaveÔÔÔÔ (Reverse battery protection)
·
Diagnostic feedback with load current sense
·
Open load detection via current sense
·
Loss of V
·
Electrostatic discharge (ESD) protection
protection
bb
2
)
1
)
Product Summary
Overvoltage protection V
Output clamp
Operating voltage
V
V
On-state resistance R
Load current (ISO) I
Short circuit current limitation
I
Current sense ratio I
TO-220AB/7
bb(AZ)
ON(CL
bb(on)
ON
L(ISO)
L(SC)
I
L :
IS
Ô
ÔÔ
5.0 ... 34 V
6.0
130 A
14 000
Application
·
Power switch with current sense diagnostic
feedback for 12
·
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
·
Replaces electromechanical relays, fuses and
discrete circuits
V and 24 V DC grounded loads
Standard
7
1
1
7
SMD
62 V
42
V
mW
70 A
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection
functions.
4 & Tab
+ V
R
Voltage
source
Voltage
sensor
3
IN
ESD
I
IN
V
IN
V
IS
Logic
I
IS
IS
5
R
IS
Overvoltage
protection
Charge pump
Level shifter
Rectifier
Current
limit
Gate
protection
Limit for
unclamped
ind. loads
Output
Voltage
detection
Temperature
sensor
bb
Current
Sense
PROFET
bb
OUT
â
1,2,6,7
I
L
Load GND
Load
Logic GND
1
) With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG Page 1of 16 2000-Mar-24
Pin Symbol Function
1OUTO
Output to the load. The pins
especially in high current applications!
Data Sheet BTS650P
1,2,6 and 7 must be shorted with each other
3
)
2 OUT O Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3 IN I Input, activates the power switch in case of short to ground
4V
5ISS
6OUTO
7OUTO
bb
Positive power supply voltage, the tab is electrically connected to this pin.
+
In high current applications the tab should be used for the V
instead of this pin
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
Output to the load. The pins
especially in high current applications!
Output to the load. The pins
especially in high current applications!
4
)
.
1,2,6 and 7 must be shorted with each other
1,2,6 and 7 must be shorted with each other
3)
connection
bb
3)
3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) V
Supply voltage for short circuit protection,
T
=-40 ...+150°C: (see diagram on page 10)
j,start
Load current (short circuit current, see page 5) I
Load dump protection V
5
)
R
= 2 W, RL = 0.54 W, td = 200 ms,
I
LoadDump
= VA + Vs, VA = 13.5 V
bb
V
bb
L
V
Load dump
self-limited A
6
)
42 V
34 V
75 V
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC £ 25 °C P
T
j
T
stg
tot
-40 ...+150
-55 ...+150
170 W
°C
Inductive load switch-off energy dissipation, single pulse
V
= 12V, T
bb
= 150°C, TC = 150°C const.,
j,start
E
AS
1.5 J
IL = 20 A, ZL = 7.5 mH, 0 W, see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kW
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
V
I
I
ESD
IN
IS
+15 , -250
+15 , -250
4kV
mA
3
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4
)
Otherwise add up to 0.7 mW (depending on used length of the pin) to the RON if the pin is used instead of
the tab.
5
)
RI = internal resistance of the load dump test pulse generator.
6
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG Page 2 2000-Mar-24
Data Sheet BTS650P
x
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ ma
7
)
Thermal resistance chip - case:
junction - ambient (free air): R
SMD version, device on PCB
8
R
thJC
thJA
)
:33
-- -- 0.75
--
60 --
K/W
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
Nominal load current
ISO 10483-1/6.7: V
Nominal load current
TA = 85 °C, Tj £ 150 °C VON £ 0.5 V, I
Maximum load current in resistive range
(Tab to pins 1,2,6,7) V
see diagram on page 13 V
12
Turn-on time
)
IIN to 90% V
Turn-off time IIN
R
= 1 W , T
L
Slew rate on
R
= 1 W , TJ = 25 °C
L
Slew rate off
=-40...+150°C
j
12)
(10 to 30% V
12)
(70 to 40% V
RL = 1 W , TJ = 25 °C
= 12 V unless otherwise specified
bb
IL = 20 A, Tj = 25 °C:
V
= 0, IL = 20 A, Tj = 150 °C:
IN
IL = 90 A, Tj = 150 °C: -- 10.7
9
V
bb
10
)
ON
10)
, device on PCB
)
= 6V
, IL = 20 A, Tj = 150 °C: R
(Tab to pins 1,2,6,7)
= 0.5 V, Tc = 85 °C
8))
= 1.8 V, Tc = 25 °C:
ON
= 1.8 V, Tc = 150 °C:
ON
to 10% V
)
OUT
)
OUT
11
min typ max
R
ON
ON(Static)
I
L(ISO)
)
L(NOM)
I
L(Max)
:
:
t
on
t
off
dV/dt
-dV/dt
on
off
OUT
OUT
-- 4.4
7.9
6.0
10.5
mW
-- 10 17
55 70 -- A
13.6 17 -- A
250
150
100
30
--
--
--
--
420
110
--
--
A
ms
-- 0.7 -- V/ms
-- 1.1 -- V/ms
7
)
Thermal resistance R
8
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
9
)
Decrease of V
long as V
10
)
Not tested, specified by design.
11
)
TJ is about 105°C under these conditions.
12
)
See timing diagram on page 14.
bIN
below 10 V causes slowly a dynamic increase of RON to a higher value of R
bb
> V
bIN(u) max
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
thCH
, RON increase is less than 10 % per second for TJ < 85 °C.
2
(one layer, 70mm thick) copper area for V
ON(Static)
bb
. As
Infineon Technologies AG Page 3 2000-Mar-24
Data Sheet BTS650P
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
V
= 12 V, IL = - 20 A Tj = 25 °C:
bIN
see diagram on page 10 Tj = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
V
= -0.5 V, Tc = 85 °C
ON
Drain-source diode voltage (V
I
L
=
-
20 A,
I
IN
= 0,
Operating Parameters
Operating voltage (V
Undervoltage shutdown
Undervoltage start of charge pump
see diagram page 15 V
Overvoltage protection
I
= 15 mA Tj = 25...+150°C:
bb
Standby current Tj =-40...+25°C:
I
= 0 Tj = 150°C:
IN
= 12 V unless otherwise specified
bb
11
)
> V
T
j = +150°C
= 0)
IN
14
)
15
)
9,
out
13
bb
)
Tj =-40°C:
R
ON(inv)
I
L(inv)
-V
ON
V
bb(on)
V
bIN(u)
bIN(ucp)
V
bIN(Z)
I
bb(off)
min typ max
-- 4.4
7.9
6.0
10.5
mW
55 70 -- A
-- 0.6 -- V
5.0 -- 34 V
1.5 3.0 4.5 V
3.0 4.5 6.0 V
60
62
--
--
66
15
25
--
--
--
25
mA
50
V
13
)
If the device is turned on before a V
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14
)
V
= V
- V
bIN
(typ.) the charge pump is not active and V
15
)
See also V
bb
see diagram on page 7. When V
IN
in circuit diagram on page 9.
ON(CL)
-decrease, the operating voltage range is extended down to V
bb
OUT
»V
increases from less than V
bIN
- 3 V.
bb
bIN(u)
up to V
bIN(ucp)
bIN(u)
= 5 V
.
Infineon Technologies AG Page 4 2000-Mar-24
Data Sheet BTS650P
I
(
)
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
Protection Functions
Short circuit current limit (Tab to pins 1,2,6,7)
V
= 12 V, time until shutdown max. 350 ms T
ON
Short circuit shutdown delay after input current
positive slope, V
min. value valid only if input "off-signal" time exceeds 30 ms
17
Output clamp
)
inductive load switch off
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at V
I
= 40 mA
L
= Vbb - V
OUT
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7) V
Thermal overload trip temperature T
Thermal hysteresis ,T
= 12 V unless otherwise specified
bb
> V
ON
ON(SC)
(e.g. overvoltage)
ON(CL)
16)
=-40°C:
c
Tc =25°C:
Tc =+150°C:
= 40 mA:
L
I
L(SC)
I
L(SC)
I
L(SC)
t
d(SC)
-V
OUT(CL)
V
ON(CL)
ON(SC)
jt
min typ max
--
-65
110
130
115
--
180
--
A
80 -- 350 ms
14 16.5 20 V
39 42 47 V
-- 6 -- V
150 -- -- °C
jt
-- 10 -- K
Reverse Battery
18
Reverse battery voltage
On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 °C:
V
= -12V, V
bb
= 0, IL = - 20 A, R
IN
Integrated resistor in Vbb line R
16
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such condition.
17
)
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
18
)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (I
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
is clamped to Vbb- V
OUT
)
= 1 kW Tj = 150 °C:
IS
at inductive load switch off.
ON(CL)
-V
bb
R
ON(rev) --
bb
IN
-- -- 32 V
5.4
8.9
7.0
12.3
-- 120 --
= I
= 0) the power transistor
IS
mW
W
Infineon Technologies AG Page 5 2000-Mar-24
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