Data Sheet, V1.1, February 2007
BTS 6142D
Smart High-Side Power Switch
PROFET
One Channel, 12 mΩ
Automotive Power
Never stop thinking.
Smart High-Side Power Switch
BTS 6142D
Table of Contents Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.3 Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4.2.1 Over-Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.2 Short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.2.3 Reverse Polarity Protection - ReversaveTM . . . . . . . . . . . . . . . . . . . . . . 18
4.2.4 Over-Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.5 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.6 Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2.7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4.3.1 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5 Package Outlines BTS 6142D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Data Sheet 2 V1.1, 2007-02-28
Smart High-Side Power Switch
PROFET
Product Summary
The BTS 6142D is a one channel high-side power
switch in PG-TO252-5-11 package providing
embedded protective functions including
ReverSave
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The design is
based on Smart SIPMOS chip on chip technology.
Operating voltage V
Over-voltage protection V
On-State resistance R
Nominal load current I
Load current (ISO) I
Current limitation I
Stand-by current for whole device with load I
™.
bb(on)
ON(CL)
DS(ON)
L(nom)
L(ISO)
L6(SC)
bb(OFF)
BTS 6142D
PG-TO252-5-11
5.5 .. 24 V
39 V
12 mΩ
7 A
27 A
50 A
6 µA
Basic Features
• Very low standby current
• Current controlled input pin
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behavior at under-voltage
• Green Product (RoHS compliant)
• AEC qualified
Type Package
BTS 6142D PG-TO252-5-11
Data Sheet 3 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protective Functions
• ReverSave™, channel switches on in case of reverse polarity
• Reverse battery protection without external components
• Short circuit protection with latch
• Over-load protection
• Multi-step current limitation
• Thermal shutdown with restart
• Over-voltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for charged inductive loads)
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportional load current sense (with defined fault signal in case of overload
operation, over temperature shutdown and/or short circuit shutdown)
• Open load detection in ON-state by load current sense
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet 4 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Overview
1Overview
The BTS 6142D is a one channel high-side power switch (12 mΩ) in PG-TO252-5-11
power package providing embedded protective functions including ReverSave
ReverSaveTM is a protection feature that causes the power transistors to switch on in
case of reverse polarity. As a result, the power dissipation is reduced.
The BTS 6142D has a current controlled input and offers a diagnostic feedback with load
current sense. The design is based on Smart SIPMOS chip on chip technology.
1.1 Block Diagram
logic I C base chip
vol tage s ensor
over
IN
tem peratur e
I
IN
IS
V
IS
V
IN
I
IS
R
IS
driv er
logi c
ES D
gate cont r ol
&
char ge pump
load c ur r ent
sense
for ward vol tage dr op detection
induc ti ve load
cl am p for
current
limitation
R
bb
T
TM
V
OUT
.
bb
I
L
LOAD
Overv iew. emf
Figure 1 Block Diagram
Data Sheet 5 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
1.2 Terms
Following figure shows all terms used in this data sheet.
V
V
bb
bIN
V
IN
Figure 2 Terms
V
bIS
I
IN
IN
R
IN
I
IS
V
IS
IS
R
IS
I
bb
VBB
BTS 6142D
OUT
Overview
V
ON
I
L
V
OUT
Ter m s. e mf
Data Sheet 6 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Pin Configuration
2 Pin Configuration
2.1 Pin Assignment BTS 6142D
TAB
V
bb
bb
IN
IS
V
OUT
1
2
Figure 3 Pin Configuration PG-TO252-5-11
2.2 Pin Definitions and Functions
Pin Symbol I/O Function
1 OUT O Output; output to the load; pin 1 and 5 must be
externally shorted.
2 IN I Input; activates the power switch if shorted to
ground.
3, Tab V
bb
4 IS O Sense Output; Diagnostic feedback; provides at
5 OUT O Output; output to the load; pin 1 and 5 must be
1)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability,
the clamping capability and decrease the current sense accuracy.
- Supply Voltage; positive power supply voltage; tab
and pin 3 are internally shorted.
normal operation a sense current proportional to the
load current; in case of overload, over temperature
and/or short circuit a defined current is provided (see
Table 1 "Truth Table" on Page 23).
externally shorted.
OUT
3
4
5
TO252-5 . emf
1)
1)
Data Sheet 7 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Electrical Characteristics
3 Electrical Characteristics
3.1 Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device.
Exposure to maximum rating conditions for extended periods may affect device reliability.
T
= 25 °C (unless otherwise specified)
j
Pos. Parameter Symbol Limit Values Unit Test
A -
Conditions
R
= 1.5 Ω
L
= 20 A
L(0)
T
= 150°C
j(0)
T
≤ 150 °C
j
Supply Voltage
3.1.1 Supply voltage V
3.1.2 Supply voltage for full short
circuit protection (single pulse)
(Tj = -40°C .. 150°C)
3.1.3 Supply Voltage for Load Dump
protection
2)
1)
Logic Pins
3.1.4 Voltage at input pin V
3.1.5 Current through input pin I
3.1.6 Voltage at current sense pin V
3.1.7 Current through sense pin I
3.1.8 Input voltage slew rate
3)
Power Stages
3.1.9 Load current
4)
3.1.10 Maximum energy dissipation
per channel (single pulse)
3.1.11 Total power dissipation (DC)
for whole device
Temperatures
3.1.12 Junction temperature T
3.1.13 Storage temperature T
min. max.
bb
V
bb(SC)
V
bb(LD)
b,IN
IN
b,IS
IS
dV
I
L
E
AS
P
tot
j
stg
bIN
-16 38 V -
0 24 V −
- 45 V RI = 2 Ω
-16 63 V -
-140 15 mA -
-16 56 V -
-140 15 mA -
/dt -20 20 V/µs -
- I
Lx(SC)
- 0.25 J I
- 50 W TC = 85 °C
-40 150 °C -
-55 150 °C -
Data Sheet 8 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
T
= 25 °C (unless otherwise specified)
j
Electrical Characteristics
Pos. Parameter Symbol Limit Values Unit Test
min. max.
Conditions
ESD Susceptibility
3.1.14 ESD susceptibility HBM V
ESD
-3 3 kV according to
EIA/JESD
22-A 114B
1)
Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
2)
Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator
3)
Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series
in the input path. A series resistor
also
Figure 14.
4)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
R
in the input path is also required for reverse operation at Vbb≤-16V. See
IN
Data Sheet 9 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
4 Block Description and Electrical Characteristics
4.1 Power Stages
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1 Input Circuit
Figure 4 shows the input circuit of the BTS 6142D. The current source to Vbb ensures
that the device switches off in case of open input pin. The zener diode protects the input
circuit against ESD pulses.
V
bIN
V
I
I
IN
IN
V
IN
Figure 4 Input Circuit
A high signal at the required external small signal transistor pulls the input pin to ground.
A logic supply current I
is flowing and the power DMOS switches on with a dedicated
IN
slope, which is optimized in terms of EMC emission.
V
R
bb
bb
Z,IN
Input.emf
I
IN
OFF
t
t
SwitchOn.emf
V
OUT
90%
50%
25%
10%
dV/dt
t
ON
ON
t
OFF
dV/dt
Figure 5 Switching a Load (resistive)
Data Sheet 10 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
4.1.2 Output On-State Resistance
The on-state resistance R
T
temperature
. Figure 6 shows these dependencies for the typical on-state resistance.
j
The on-state resistance in reverse polarity mode is described in Section 4.2.3.
5
21
PΩ
Vbb = 12 V Tj = 25°C
Figure 6 Typical On-State Resistance
At small load currents the resistance is artificially increased to improve current sense
accuracy. Therefore the forward voltage drop
proportional to the load current IL , but is controlled by an internal “two level controller”
to remain clamped to a defined value
typical device.
depends on the supply voltage as well as the junction
DS(ON)
5
W\S
&
7
V
21
PΩ
M
V
at small load currents is no more
ON
Figure 7 shows the dependency for a
ON(NL).
W\S
9
9
EE
Data Sheet 11 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Vbb = 12 V
= 25°C
T
j
9
21
9
921a,
W\S
/
921≥9
211/
$
Figure 7 Typical Output Voltage Drop Limitation
4.1.3 Output Inductive Clamp
When switching off inductive loads, the output voltage V
i
potential due to the involved inductance ( -d
V
bb
/dt = -vL/L ; -V
L
VBB
V
ON
Power Stages
,
/
drops below ground
OUT
≅
-V
OUT
).
L
I
L
V
OUT
OUT
L,
R
L
Output Clamp .em f
Figure 8Output Clamp
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps the voltage drop across the device at a certain level (V
). See Figure 8
ON(CL)
and Figure 9 for details. The maximum allowed load inductance is limited.
Data Sheet 12 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
V
V
OUT(CL)
OUT
V
bb
I
L
ON OFF
V
ON(CL)
Power Stages
t
t
Induc tiv eLoad.em f
Figure 9 Switching an Inductance
Maximum Load Inductance
While de energizing inductive loads, energy has to be dissipated in the BTS 6142D. This
energy can be calculated via the following equation:
VbbV
EV
ON CL()
–
----------------------------------------
⋅⋅=
R
L
ON CL()
ln⋅ 1
RLI
⋅
-------------------------------------- -+
V
ON(CL)Vbb
L
–
L
------
I
+
L
R
L
In the event of de-energizing very low ohmic inductances (R
≈0) the following, simplified
L
equation can be used:
1
-- -
E
LI
L
2
ON(CL)
-------------------------------------- -
⋅=
V
–
ON(CL)Vbb
V
2
The energy, which is converted into heat, is limited by the thermal design of the
component. For given starting currents the maximum allowed inductance is therefore
limited. See
Data Sheet 13 V1.1, 2007-02-28
Figure 10 for the maximum allowed inductance at Vbb=12V.
Smart High-Side Power Switch
BTS 6142D
V
= 12 V
bb
T
j(o)
≤ 150°C
/
P+
$
Figure 10 Maximum load inductance for single pulse, T
,
/
j,Start
Power Stages
= 150°C
Data Sheet 14 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Power Stages
4.1.4 Electrical Characteristics
V
= 12 V, Tj = 25 °C (unless otherwise specified)
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
General
4.1.1 Operating voltage V
4.1.2 Undervoltage
shutdown
1)
4.1.3 Undervoltage restart
of charge pump
4.1.4 Operating current I
4.1.5 Stand-by current
T
= -40 °C, Tj = 25 °C
j
T
≤ 120 °C
j
T
= 150 °C
j
1)
Input characteristics
4.1.6 Input current for
turn-on
4.1.7 Input current for
turn-off
bb
V
bIN(u)
V
bb(ucp)
IN
I
bb(OFF)
I
IN(on)
I
IN(off)
5.5 - 38 V VIN = 0 V
T
= -40..150 °C
j
- 2.5 3.5 V -
- 4 5.5 V -
- 1.4 2.2 mA Tj = -40..150 °C
µA IIN = 0 A
-
3
6
-
3
6
-
9
16
- 1.4 2.2 mA V
bIN≥Vbb(ucp)-VIN
T
= -40 … 150 °C
j
- - 30 µA Tj = -40 … 150 °C
,
Output characteristics
4.1.8 On-state resistance
T
=25°C
j
T
=150°C
V
bb
V
=5.5V, Tj=150°C
bb
j
=5.5V, Tj=25°C
4.1.9 Output voltage drop
R
DS(ON)
V
ON(NL)
mΩ VIN=0V, IL=7.5A,
-
10
12
-
17
22
-
12
17
-
22
29
(Tab to pin 1 and
5)
- 30 65 mV Tj = -40..150 °C
limitation at small load
currents
4.1.10 Nominal load current
(Tab to pin1 & 5) 2)
ISO load current
(Tab to pin 1 & 5)
Data Sheet 15 V1.1, 2007-02-28
I
L(nom)
3)
I
L(ISO)
3)
7 8.5 - A Ta = 85 °C
V
≤ 0.5 V,
ON
T
≤ 150 °C
j
27 33 - A Tc = 85 °C
V
≤ 0.5 V,
ON
T
≤ 150 °C
j
Smart High-Side Power Switch
BTS 6142D
V
= 12 V, Tj = 25 °C (unless otherwise specified)
bb
Power Stages
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
4.1.11 Output clamp V
4.1.12 Inverse current output
voltage drop 1)
4)
ON(CL)
-V
ON(inv)
39 42 - V IL = 40 mA
mV IL = -7.5 A,
R
= 1 kΩ
IS
(Tab to pin 1 and 5)
T
= 25 °C
j
T
= 150 °C
j
--800
600--
Timings
4.1.13 Turn-on time to
90% V
bb
4.1.14 Turn-off time to
10% V
bb
4.1.15 Turn-on delay after
inverse operation
V
= V
IN(inv)
IN(fwd)
4.1.16 Slew rate On
25% to 50% V
bb
4.1.17 Slew rate Off
50% to 25% V
bb
1)
= 0 V
t
ON
t
OFF
t
d(inv)
dV/ dt
-dV/
dt
OFF
- 250 600 µs RL = 2.2 Ω,
- 250 600 µs RL = 2.2 Ω,
- 1 - ms Vbb > V
- 0.3 0.7 V/µs RL = 2.2 Ω,
ON
- 0.3 0.7 V/µs RL = 2.2 Ω,
T
= -40 … 150 °C
j
T
= -40 … 150 °C
j
OUT
T
= -40 … 150 °C
j
T
= -40 … 150 °C
j
Thermal Resistance
4.1.18 Junction to case
4.1.19 Junction to ambient
device on PCB
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70
µm thick) for Vbb connection. PCB is vertical without blown air.
3)
Not subject to production test, parameters are calculated from R
4)
Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In
this case the device switches on with a time delay
sense current I
IS(fault)
1)
R
thjc
1)
R
free air
can be provided by the pin IS until standard forward operation is reached.
thja
2)
- - 1.3 K/W -
K/W -
-
80
-
45-55
and R
DS(ON)
t
after the transition from inverse to forward mode. A
d(inv)
th
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet 16 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
4.2 Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1 Over-Load Protection
The load current IL is limited by the device itself in case of over-load or short circuit to
ground. There are multiple steps of current limitation
automatically depending on the voltage drop
that the voltage at the OUT pin is
V
V
across the power DMOS. Please note
ON
- VON. Figure 11 shows the dependency for a
bb
typical device.
,
/6&
$
Tj = 25°C
W\S
I
Lx(SC)
which are selected
9
216&
9
9
21
Figure 11 Typical Current Limitation
Depending on the severity of the short condition as well as on the battery voltage the
resulting voltage drop across the device varies.
Whenever the resulting voltage drop VON exceeds the short circuit detection threshold
V
The V
time t
In the event that either the short circuit detection via V
on chip temperature sensor senses over-temperature before the blanking time t
, the device will switch off immediately and latch until being reset via the input.
ON(SC)
detection functionality is activated, when V
ON(SC)
expired after switch on.
d(SC1)
>10V typ. and the blanking
bIN
is not activated or that the
ON(SC)
d(SC1)
expired, the device switches off resulting from over-temperature detection. After cooling
down with thermal hysteresis, the devices switches on again. Please refer to
Figure 12
for details.
Data Sheet 17 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
detection
V
ON(SC)
I
IN
V
ON
I
L
t
d(SC1 )
V
> V
ONx
ON(SC)
I
Lx(S C)
t
m
t
t
t
V_ON_det ect. emf
I
IN
I
L
ϑ
j
Over temperature detection
Protection Functions
t
t
thermal hysteresis
t
Over_Temp . emf
Figure 12 Overload Behavior
4.2.2 Short circuit impedance
The capability to handle single short circuit events depends on the battery voltage as well
as on the primary and secondary short impedance.
combinations for a single short circuit event of maximum, secondary inductance for given
secondary resistance.
/
6&
5uH
10mΩ
V
bb
V
bb
IN
OUT
PROFET
IS
SHORT
CIRCUIT
L
SC
R
SC
LO AD
short _cir cuit. emf
X+
Figure 13 outlines allowable
9EE 9
9EE 9
9EE 9
PΩ
5
6&
Figure 13 Short circuit
4.2.3 Reverse Polarity Protection - Reversave
The device can not block a current flow in reverse battery condition. In order to minimize
power dissipation, the device offers Reversave
TM
TM
functionality. In reverse polarity
condition the channel will be switched on provided a sufficient gate to source voltage is
generated V
GS≈VRbb
Data Sheet 18 V1.1, 2007-02-28
. Please refer to Figure 14 for details.
Smart High-Side Power Switch
BTS 6142D
Rbb
R
bb
V
bb
Logic
IS
power groundsigna l gr ound
I
R
IN
IN
IS
-I
IN
D
-I
R
IS
Protection Functions
-V
bb
-I
L
LOAD
Revers e.em f
Figure 14 Reverse battery protection
Additional power is dissipated by the integrated Rbb resistor. Use following formula for
estimation of overall power dissipation
P
diss(rev)RON(rev)IL
For reverse battery voltages up to V
bb
P
<16V the pin IN or the pin IS should be low ohmic
in reverse polarity mode.
diss(rev)
2
⋅ R
⋅+≈
bbIRbb
2
connected to signal ground. This can be achieved e.g. by using a small signal diode D
in parallel to the input switch or by using a small signal MOSFET driver. For reverse
battery voltages higher then V
>16V an additional resistor R
bb
reverse battery voltages higher then V
>16 the overall current through R
bb
is recommended. For
IN
should be
bb
about 80mA.
1
---------
R
IN
1
---------+
R
IS
-----------------------------=
V
0,08A
bb
12V–
Note: No protection mechanism is active during reverse polarity. The IC logic is not
functional.
Data Sheet 19 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
4.2.4 Over-Voltage Protection
Beside the output clamp for the power stage as described in Section 4.1.3 there is a
clamp mechanism implemented for all logic pins. See Figure 15 for details.
R
IN
bb
Z,ISVZ,IN
V
Logic
IS OUT
V
bb
OverV oltage .em f
Figure 15 Over-Voltage Protection
4.2.5 Loss of Ground Protection
In case of complete loss of the device ground connections the BTS 6142D securely
changes to or remains in off state.
4.2.6 Loss of Vbb Protection
In case of complete loss of Vbb the BTS 6142D remains in off state.
In case of loss of Vbb connection with charged inductive loads a current path with load
current capability has to be provided, to demagnetize the charged inductances. It is
recommended to use a diode, a Z-diode, or a varistor (
V
if RIN = 0). For higher clamp voltages currents through IN and IS have to be limited to
mA. Please refer to Figure 16 for details.
120
< 39 V or VZb+VD < 16 V
ZL+VD
V
bb
R
V
bb
IS
Logic
R
IS
inductive
IN
R
IN
Figure 16 Loss of V
bb
LOAD
bb
V
D
V
ZL
Vbb_dis connect _A.em f
V
bb
V
D
IN
V
Zb
IS
R
IN
R
V
bb
bb
Logic
R
IS
inductive
LOAD
Vbb_dis connect _B. emf
Data Sheet 20 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protection Functions
4.2.7 Electrical Characteristics
V
= 12 V, Tj = +25 °C (unless otherwise specified)
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Over-Load Protection
= -40 °C
2)
= -40 °C
= -40 °C
2)
= -40 °C
= -40 °C
1)
3)
2)
2)
2)
I
L6(SC)
I
L12(SC)
I
L18(SC)
I
L24(SC)
I
L30(SC)
V
ON(SC)
t
d(SC1)
T
j(SC)
j
A VON = 6 V,
-
110
50
160
-
100
75
-
-
(Tab to pin 1 and
5)
A VON = 12 V,
-
90
45
120
-
80
70
-
-
t
= 170 µs,
m
(Tab to pin 1 and
5)
A VON = 18 V,
-
60
30
90
-
60
50
-
-
(Tab to pin 1 and
5)
A VON = 24 V,
-
40
-
40
-
35
-
-
-
t
= 170 µs,
m
(Tab to pin 1 and
5)
A VON = 30 V,
-
25
-
25
-
25
2.5 3.5 4.5 V V
-
-
(Tab to pin 1 and
5)
-
> 10 V typ.
bIN
200 650 1200 µs VON > V
T
= -40 … 150 °C
j
150 1651)- °C -
- 10 - K -
ON(SC)
,
4.2.1 Load current limitation1)
T
j
T
= +25 °C
j
T
= +150 °C
j
4.2.2 Load current limitation
T
j
T
= +25 °C
j
T
= +150 °C
j
4.2.3 Load current limitation1)
T
j
T
= +25 °C
j
T
= +150 °C
j
4.2.4 Load current limitation
T
j
T
= +25 °C
j
T
= +150 °C
j
4.2.5 Load current limitation1)
T
j
T
= +25 °C
j
T
= +150 °C
j
4.2.6 Short circuit shutdown
detection voltage
4.2.7 Short circuit shutdown
delay after input
current pos. slope
4.2.8 Thermal shut down
temperature
4.2.9 Thermal hysteresis 1)∆T
Data Sheet 21 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
V
= 12 V, Tj = +25 °C (unless otherwise specified)
bb
Protection Functions
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Reverse Battery
4.2.10 On-State resistance
in case of reverse
polarity
V
=-8V, Tj=25°C
bb
V
=-8V, Tj=150°C
bb
V
=-12V, Tj=25°C
bb
V
=-12V, Tj=150°C
bb
4.2.11 Integrated resistor in
V
line
bb
R
ON(rev)
1)
1)
R
bb
-
12
-
20
-
12
-
18
- 100 150 Ω -
mΩ VIN = 0,
16
27
15
24
I
= -7.5A,
L
R
= 1 kΩ,
IS
(pin 1 and 5 to
TAB)
Over-Voltage
4.2.12 Over-voltage
protection
Input pin V
Sense pin V
1)
Not subject to production test, specified by design
2)
Short circuit current limit for max. duration of t
3)
min. value valid only if input “off-signal” time exceeds 30 µs
V
Z
Z,IN
Z,IS
63 67 - V
56 61 - V
, prior to shutdown, see also Figure 12.
d(SC1)
V Ibb = 15 mA,
T
= -40 … 150 °C
j
Data Sheet 22 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Diagnosis
4.3 Diagnosis
For diagnosis purpose, the BTS 6142D provides an IntelliSense signal at the pin IS.
The pin IS provides during normal operation a sense current, which is proportional to the
load current as long as V
During switch-on no current is provided, until the forward voltage drops below
typ. The output sense current is limited to
The pin IS provides in case of any fault conditions a defined fault current I
conditions are over-current (
The pin IS provides no current during open load in ON, de-energisation of inductive loads
and inverse current mode.
Figure 17 Block Diagram: Diagnosis
>5V. The ratio of the output current is defined as k
b,IS
I
.
IS,lim
V
>1V typ.), current limit or over-temperature switch off.
ON
V
b,IS
R
V
bb
bb
I
IS
I
IS(fault)
IS
V
Z,IS
V
R
IS
IS
ILIS=IL/IIS
V
IS(fault).
<1V
ON
Fault
Sense. emf
.
Table 1 Truth Table
Parameter Input Current
Output Level Current Sense I
IS
Level
Normal
operation
Overload L
Short circuit to GND L
Overtemperature L
Short circuit to V
Open load L
Data Sheet 23 V1.1, 2007-02-28
1)
L
1)
H
H
H
H
L
bb
H
H
L
H
L
H
L
L
L
L
H
H
1)
Z
H
≈ 0 (I
IS(LL)
nominal
≈ 0 (I
IS(LL)
I
IS,fault
≈ 0 (I
IS(LL)
I
IS,fault
≈ 0 (I
IS(LL)
I
IS,fault
≈ 0 (I
IS(LL)
< nominal
≈ 0 (I
IS(LL)
≈ 0 (I
IS(LH)
)
)
)
)
)
2)
)
)
Smart High-Side Power Switch
BTS 6142D
1)
H = “High” Level, L = “Low” Level, Z = high impedance, potential depends on external circuit
2)
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
The accuracy of the provided current sense ratio (k
current. Please refer to
Figure 18 for details. A typical resistor RIS of 1 kΩ is
= IL / IIS) depends on the load
ILIS
Diagnosis
recommended.
N
,/,6
,
/PLQ
Figure 18 Current sense ratio k
ILIS
1)
PD[
W\S
PLQ
$
,
/
Details about timings between the diagnosis signal IIS, the forward voltage drop VON and
the load current
I
in ON-state can be found in Figure 19.
L
Note: During operation at low load current and at activated forward voltage drop
limitation the “two level control” of V
synchronous to the “two level control” of V
can cause a sense current ripple
ON(NL)
. The ripple frequency increases
ON(NL)
at reduced load currents.
1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Section 4.3.1 (Position 4.3.1).
Sheet in
Data Sheet 24 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
0.9*I
I
IN
I
IS (LL)
tVON<1V t y p.
t
t
t
t
slc(IS)
I
L2
I
IS2
VON>1V t y p.
I
I
IS(fault)
IS (lim )
V
ON
I
L
I
IS
IS1
t
son(IS)
I
L1
I
IS1
I
IN
V
ON
I
L
I
IS
t
delay( fault )
Figure 19 Timing of Diagnosis Signal in ON-state
Diagnosis
shortnormal operation
ON(SC)
I
Lx(S C)
I
IS (f ault )
over-temperat ure
VON<1V t y p.
I
L
I
IS(fault)
SwitchOn.emf
tVON>V
t
t
t
Data Sheet 25 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Diagnosis
4.3.1 Electrical Characteristics
V
= 12 V, Tj = 25 °C (unless otherwise specified)
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Load Current Sense
4.3.1 Current sense ratio,
static on-condition
I
L
I
L
I
L
I
L
I
= 0 (e.g. during de
IN
energizing of
inductive loads)
4.3.2 Sense saturation
current
1)
4.3.3 Sense current under
fault conditions
4.3.4 Current sense
leakage current
4.3.5 Current sense offset
current
4.3.6 Minimum load current
for sense functionality
4.3.7 Current sense settling
time to 90% I
IS_stat.
4.3.8 Current sense settling
time to 90% I
IS_stat.
4.3.9 Fault-Sense signal
delay after input
current positive slope
1)
Not subject to production test, specified by design
=30A
=7.5A
=2.5A
=0.5A
1)
1)
1)
k
ILIS
I
IS(lim)
I
IS(fault)
I
IS(LL)
I
IS(LH)
I
L(MIN)
t
son(IS)
t
slc(IS)
t
delay(fault)
- 10 - k VIN = 0 V,
I
< I
IS
IS,lim
8
10
7.5
6.5
3
10
10
10
12
13
16
30
T
= -40..150 °C
j
disabled - -
2.5 6 10 mA VON < 1 V, typ.
T
= -40 … 150 °C
j
2.5 6 10 mA VON > 1 V, typ.
T
= -40 … 150 °C
j
– 0.1 0.5 µA IIN = 0
– 0.1 1 µA VIN = 0, IL ≤ 0
0.5 – – A VIN = 0,
T
= -40 … 150 °C
j
– 350 700 µs IL = 0 20 A
T
= -40 … 150 °C
j
– 50 100 µs IL = 10 20 A
T
= -40 … 150 °C
j
200 650 1200 µs VON > 1 V, typ.
T
= -40 … 150 °C
j
Data Sheet 26 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
5 Package Outlines BTS 6142D
PG-TO252-5-11
(Plastic Dual Small Outline Package)
Package Outlines BTS 6142D
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products
and to be compliant with government regulations the device is available as a green
product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable
for Pb-free soldering according to IPC/JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
SMD = Surface Mounted Device
Data Sheet 27 V1.1, 2007-02-28
Dimensions in mm
Smart High-Side Power Switch
BTS 6142D
6 Revision History
Version Date Changes
V1.1 07-02-28 RoHS compliant version of BTS 6142D
changed IFX logo
page 3: Ordering code removed
page 3: “AEC qualified” and “RoHS” logos added
page 3, page 27: “AEC Stress Test Qualification” and “Green
Product (RoHS compliant)” added to feature list
page 3, page 27: Change to RoHS compliant package PGTO252-5-11
Legal disclaimer updated
V1.0 05-10-25 initial version of Final Data Sheet
Revision History
Data Sheet 28 V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Edition 2007-02-28
Published by
Infineon Technologies AG,
81726 Munich, Germany
© Infineon Technologies AG 3/1/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet 29 V1.1, 2007-02-28
http://www.infineon.com
Published by Infineon Technologies AG
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