The BTS 6142D is a one channel high-side power
switch in PG-TO252-5-11 package providing
embedded protective functions including
ReverSave
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The design is
based on Smart SIPMOS chip on chip technology.
Operating voltageV
Over-voltage protectionV
On-State resistanceR
Nominal load current I
Load current (ISO)I
Current limitationI
Stand-by current for whole device with loadI
™.
bb(on)
ON(CL)
DS(ON)
L(nom)
L(ISO)
L6(SC)
bb(OFF)
BTS 6142D
PG-TO252-5-11
5.5 .. 24 V
39 V
12 mΩ
7 A
27 A
50 A
6 µA
Basic Features
• Very low standby current
• Current controlled input pin
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behavior at under-voltage
• Green Product (RoHS compliant)
• AEC qualified
TypePackage
BTS 6142DPG-TO252-5-11
Data Sheet3V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Protective Functions
• ReverSave™, channel switches on in case of reverse polarity
• Reverse battery protection without external components
• Short circuit protection with latch
• Over-load protection
• Multi-step current limitation
• Thermal shutdown with restart
• Over-voltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for charged inductive loads)
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportional load current sense (with defined fault signal in case of overload
operation, over temperature shutdown and/or short circuit shutdown)
• Open load detection in ON-state by load current sense
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet4V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Overview
1Overview
The BTS 6142D is a one channel high-side power switch (12 mΩ) in PG-TO252-5-11
power package providing embedded protective functions including ReverSave
ReverSaveTM is a protection feature that causes the power transistors to switch on in
case of reverse polarity. As a result, the power dissipation is reduced.
The BTS 6142D has a current controlled input and offers a diagnostic feedback with load
current sense. The design is based on Smart SIPMOS chip on chip technology.
1.1Block Diagram
logic I Cbase chip
vol tage s ensor
over
IN
tem peratur e
I
IN
IS
V
IS
V
IN
I
IS
R
IS
driv er
logi c
ES D
gate cont r ol
&
char ge pump
load c ur r ent
sense
for ward vol tage dr op detection
induc ti ve load
cl am p for
current
limitation
R
bb
T
TM
V
OUT
.
bb
I
L
LOAD
Overv iew. emf
Figure 1Block Diagram
Data Sheet5V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
1.2Terms
Following figure shows all terms used in this data sheet.
V
V
bb
bIN
V
IN
Figure 2Terms
V
bIS
I
IN
IN
R
IN
I
IS
V
IS
IS
R
IS
I
bb
VBB
BTS 6142D
OUT
Overview
V
ON
I
L
V
OUT
Ter m s. e mf
Data Sheet6V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Pin Configuration
2Pin Configuration
2.1Pin Assignment BTS 6142D
TAB
V
bb
bb
IN
IS
V
OUT
1
2
Figure 3Pin Configuration PG-TO252-5-11
2.2Pin Definitions and Functions
PinSymbolI/OFunction
1OUTOOutput; output to the load; pin 1 and 5 must be
externally shorted.
2INIInput; activates the power switch if shorted to
ground.
3, TabV
bb
4ISOSense Output; Diagnostic feedback; provides at
5OUTOOutput; output to the load; pin 1 and 5 must be
1)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability,
the clamping capability and decrease the current sense accuracy.
-Supply Voltage; positive power supply voltage; tab
and pin 3 are internally shorted.
normal operation a sense current proportional to the
load current; in case of overload, over temperature
and/or short circuit a defined current is provided (see
Table 1 "Truth Table" on Page 23).
externally shorted.
OUT
3
4
5
TO252-5 . emf
1)
1)
Data Sheet7V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
Electrical Characteristics
3Electrical Characteristics
3.1Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device.
Exposure to maximum rating conditions for extended periods may affect device reliability.
T
= 25 °C (unless otherwise specified)
j
Pos.ParameterSymbolLimit Values Unit Test
A-
Conditions
R
= 1.5 Ω
L
= 20 A
L(0)
T
= 150°C
j(0)
T
≤ 150 °C
j
Supply Voltage
3.1.1Supply voltageV
3.1.2Supply voltage for full short
circuit protection (single pulse)
(Tj = -40°C .. 150°C)
3.1.3Supply Voltage for Load Dump
protection
2)
1)
Logic Pins
3.1.4Voltage at input pinV
3.1.5Current through input pinI
3.1.6Voltage at current sense pinV
3.1.7Current through sense pinI
3.1.8Input voltage slew rate
3)
Power Stages
3.1.9Load current
4)
3.1.10 Maximum energy dissipation
per channel (single pulse)
3.1.11 Total power dissipation (DC)
for whole device
Temperatures
3.1.12 Junction temperatureT
3.1.13 Storage temperatureT
min.max.
bb
V
bb(SC)
V
bb(LD)
b,IN
IN
b,IS
IS
dV
I
L
E
AS
P
tot
j
stg
bIN
-1638V-
024V−
-45VRI = 2 Ω
-1663V-
-14015mA-
-1656V-
-14015mA-
/dt-2020V/µs -
-I
Lx(SC)
-0.25JI
-50WTC = 85 °C
-40150°C-
-55150°C-
Data Sheet8V1.1, 2007-02-28
Smart High-Side Power Switch
BTS 6142D
T
= 25 °C (unless otherwise specified)
j
Electrical Characteristics
Pos.ParameterSymbolLimit Values Unit Test
min.max.
Conditions
ESD Susceptibility
3.1.14 ESD susceptibility HBMV
ESD
-33kVaccording to
EIA/JESD
22-A 114B
1)
Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
2)
Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator
3)
Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series
in the input path. A series resistor
also
Figure 14.
4)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
R
in the input path is also required for reverse operation at Vbb≤-16V. See
IN
Data Sheet9V1.1, 2007-02-28
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