INFINEON BTS612N1 User Manual
PROFET
Smart Two Channel Highside Power Switch
®
BTS612N1
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
•
Undervoltage and overvoltage shutdown with
1
)
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of V
•
Electrostatic discharge (ESD) protection
protection
bb
Application
•
µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
Product Summary
Overvoltage protection V
Operating voltage
V
channels: each
43 V
bb(AZ)
5.0 ... 34 V
bb(on)
both
parallel
On-state resistance RON 200 100
Load current (ISO) I
Current limitation I
2.3 4.4 A
L(ISO)
4 4 A
L(SCr)
TO-220AB/7
Standard
7
1
Straight leads
7
1
SMD
mΩ
1
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
7
+ V
bb
OUT1
OUT2
4
1
7
Load
Load GND
Voltage
source
V
Logic
Voltage
sensor
IN1
3
IN2
6
ESD
5
ST
PROFET
Logic
Overvoltage
protection
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Level shifter
Rectifier 2
GND
2
Current
limit 1
Current
limit 2
Signal GND
Gate 1
protection
Limit for
unclamped
ind. loads 1
Open load
Short to Vbb
detection 1
Gate 2
protection
Limit for
unclamped
ind. loads 2
Open load
Short to Vbb
detection 2
Temperature
sensor 1
Temperature
sensor 2
1)
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
Semiconductor Group 1 of 15 2003-Oct-01
BTS612N1
Pin Symbol Function
1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1
2 GND Logic ground
3 IN1 Input 1, activates channel 1 in case of logical high signal
4 Vbb Positive power supply voltage,
the tab is shorted to this pin
5 ST
Diagnostic feedback: open drain, low on failure
6 IN2 Input 2, activates channel 2 in case of logical high signal
7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection
T
=-40 ...+150°C
j Start
Load dump protection2) V
3)
R
= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high
I
LoadDump
= UA + Vs, UA = 13.5 V
Vbb 34 V
4
V
Load dump
)
60 V
Load current (Short circuit current, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C P
Inductive load switch-off energy dissipation, single pulse
V
= 12V, T
bb
= 150°C, TC = 150°C const.
j,start
one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω:
Tj
T
stg
36 W
tot
-40 ...+150
-55 ...+150
°C
EAS 290 mJ
both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω: 580
see diagrams on page 9
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
V
1.0
ESD
kV
2.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
IIN
IST
±2.0
±5.0
mA
2)
Supply voltages higher than V
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
RI = internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins, e.g. with a
bb(AZ)
Semiconductor Group 2 2003-Oct-01
BTS612N1
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case, both channels:
each channel:
junction - ambient (free air):
SMD version, device on PCB5):
R
R
thJC
thJA
--
--
--
--
--
--
3.5
7.0
37
K/W
75
Electrical Characteristics
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
= 1.8 A Tj=25 °C:
I
L
each channel
T
=150 °C:
j
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, TC = 85 °C each channel:
both channels parallel:
Output current (pin 1 or 7) while GND disconnected
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
Turn-on time IN to 90% V
Turn-off time IN to 10% V
OUT
OUT
:
:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
, R
10 to 30% V
OUT
= 12 Ω, Tj =-40...+150°C
L
Slew rate off
70 to 40% V
, RL = 12 Ω, Tj =-40...+150°C
OUT
RON
I
L(ISO)
I
L(GNDhigh)
ton
t
off
dV /dt
-dV/dt
min typ max
-- 160
320
1.8
3.5
2.3
4.4
-- -- 10 mA
80
80
0.1 -- 1 V/µs
on
0.1 -- 1 V/µs
off
200
200
200
400
400
400
mΩ
--
A
--
µs
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
2
(one layer, 70µm thick) copper area for Vbb
Semiconductor Group 3 2003-Oct-01
BTS612N1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Operating Parameters
Operating voltage6) Tj =-40...+150°C: V
Undervoltage shutdown Tj =-40...+150°C: V
Undervoltage restart Tj =-40...+25°C:
V
Tj =+150°C:
Undervoltage restart of charge pump
V
see diagram page 12
Undervoltage hysteresis
∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
∆V
Overvoltage shutdown Tj =-40...+150°C: V
Overvoltage restart Tj =-40...+150°C: V
Overvoltage hysteresis Tj =-40...+150°C: ∆V
Overvoltage protection
7)
Tj =-40...+150°C:
V
Ibb=40 mA
Standby current (pin 4),
I
bb(off)
VIN=0 Tj=-40...+150°C:
Operating current (Pin 2)8), VIN=5 V
I
GND
both channels on, Tj =-40...+150°C,
Operating current (Pin 2)8)
I
GND
one channel on, Tj =-40...+150°C:,
min typ max
5.0 -- 34 V
bb(on)
bb(under)
bb(u rst)
bb(ucp)
bb(over)
bb(o rst)
bb(AZ)
3.5 -- 5.0 V
-- -- 5.0
-- 5.6 7.0 V
bb(under)
-- 0.2 -- V
34 -- 43 V
33 -- -- V
-- 0.5 -- V
bb(over)
42 47 -- V
--
90 150
-- 0.6 1.2 mA
-- 0.4 0.7 mA
V
7.0
µA
6)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, V
7)
See also V
8)
Add I
, if IST > 0, add IIN, if VIN>5.5 V
ST
in table of protection functions and circuit diagram page 8.
ON(CL)
≈Vbb - 2 V
OUT
Semiconductor Group 4 2003-Oct-01
BTS612N1
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min typ max
Protection Functions9)
Initial peak short circuit current limit (pin 4 to 1
I
L(SCp)
or 7)
Repetitive short circuit shutdown current limit I
=-40°C:
Tj
=25°C:
Tj
=+150°C:
Tj
5.5
4.5
2.5
L(SCr)
9.5
7.5
4.5
Tj = Tjt (see timing diagrams, page 11) -- 4 -- A
Output clamp (inductive load switch off)
at V
= Vbb - V
OUT
I
ON(CL)
= 40 mA: V
L
ON(CL)
41
47 53 V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
Reverse battery (pin 4 to 2)
Reverse battery voltage drop (V
10)
-Vbb -- -- 32 V
)
> V
out
bb
IL = -1.9 A, each channel Tj=150 °C: -V
∆
Tjt -- 10 -- K
ON(rev)
--
610 --
Diagnostic Characteristics
Open load detection current
(included in standby current I
bb(off)
)
Open load detection voltage Tj=-40..150°C: V
I
-- 30 --
L(off)
OUT(OL)
2 3 4V
13
11
A
7
mV
µA
9)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
Semiconductor Group 5 2003-Oct-01
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