The BTS 5434G is a four channel high-side power
switch in P-DSO-28-19 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Operating voltage
V
bb(on)
BTS 5434G
P-DSO-28-19
4.5..28V
Over voltage protection
On-State resistance
Nominal load current (one channel active)
Current limitation
Current limitation repetitive
Standby current for whole device with load
V
bb(AZ)
R
DS(ON)
I
L(nom)
I
L(LIM)
I
L(SCr)
I
bb(OFF)
Basic Features
• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
41 V
60 mΩ
3.4 A
23 A
6A
5µA
TypeOrdering CodePackage
BTS 5434GQ67060-S6157P-DSO-28-19
Data Sheet3V1.0, 2004-01-23
Smart High-Side Power Switch
Protective Functions
• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Enhanced IntelliSense signal for each channel
• Enable function for diagnosis pins (IS1 .. IS4)
• Proportional load current sense signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Open load detection in OFF-state by voltage source
• Feedback on over temperature and current limitation in ON-state
BTS 5434G
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet4V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Overview
1Overview
The BTS 5434G is a four channel high-side power switch (four times 60 mΩ) in
P-DSO-28-19 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 to IS4 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pins SENA and SENB.
Integrated ground resistors as well as integrated resistors at each input pin (IN1, IN2,
IN3, IN4, SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is built by two dual
channel chips, monolithically integrated in Smart SIPMOS technology.
1.1Block Diagram
VBB
OUT2
OUT1
IN1
IN2
IS1
IS2
SENA
channel 1,2 (Chip A)
internal
power
supply
ESD
protection
logic
load cur rent
sense
gate control
&
char ge pum p
open load
detec tion
tem peratur e
sensor
clamp for
inductive load
multi step
load cur r ent
limitation
IN3
IN4
IS3
IS4
SENB
channel 3,4 (Chip B)
control and protecti on cir cuit
equival ent to
channel 1,2
R
GND
GNDA
GNDB
R
OUT4
OUT3
GND
Figure 1Block Diagram
Data Sheet5V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
1.2Terms
Following figure shows all terms used in this data sheet.
V
bb
I
IN1
IN1
IS3
I
IN2
IN2
I
IS1
IS1
I
IS2
BTS 5434G
IS2
I
SENA
SENA
I
IN3
IN3
I
IN4
IN4
I
IS3
IS3
I
IS4
I
V
SENB
IS4
V
SENB
IS4
SENB
GNDA
V
IN1
V
IN2
V
IS1
V
IS2
V
SENA
V
IN3
V
IN4
V
VBB
I
bb
GNDB
OUT1
OUT2
Chip A
OUT3
OUT4
Chip B
Overview
I
I
I
I
V
L1
L2
L3
L4
V
V
V
OUT1
DS2
OUT2
DS1
V
V
V
V
OUT3
DS4
OUT4
DS3
Figure 2Terms
I
GND
Ter m s4 ch . em f
Data Sheet6V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
2Pin Configuration
2.1Pin Assignment BTS 5434G
(top view)
VBB
GNDA
IN1
IS1
IS2
IN2
SENA
GNDB
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
Pin Configuration
VBB
OUT1
OUT1
OUT1
OUT2
OUT2
OUT2
OUT3
IN3
IS3
IS4
IN4
SENB
VBB
9
10
11
12
13
14
20
19
18
17
16
15
Figure 3Pin Configuration P-DSO-28-19
2.2Pin Definitions and Functions
PinSymbolI/O
OD
3IN1IInput signal for channel 1
6IN2IInput signal for channel 2
9IN3IInput signal for channel 3
Function
OUT3
OUT3
OUT4
OUT4
OUT4
VBB
12IN4IInput signal for channel 4
4IS1ODiagnosis output signal channel 1
5IS2ODiagnosis output signal channel 2
10IS3ODiagnosis output signal channel 3
11IS4ODiagnosis output signal channel 4
Data Sheet7V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
PinSymbolI/O
OD
7SENAISense Enable input for channel 1&2
13SENBISense Enable input for channel 3&4
25, 26, 27 OUT1OProtected high-side power output channel 1
22, 23, 24 OUT2OProtected high-side power output channel 2
19, 20, 21 OUT3OProtected high-side power output channel 3
16, 17, 18 OUT4OProtected high-side power output channel 4
2GNDA-Ground connection chip A
8GNDB-Ground connection chip B
1, 14, 15, 28VBB-Positive power supply for logic supply as well as
Function
output power supply
Pin Configuration
Data Sheet8V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Electrical Characteristics
3Electrical Characteristics
3.1Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
T
= 25 °C
j
Pos.ParameterSymbolLimit ValuesUnitTest
Conditions
R = 0.2 Ω
1)
Supply Voltage
3.1.1Supply voltageV
3.1.2Supply voltage for full short
V
circuit protection (single pulse)
T
= -40°C .. 150°C)
(
j(0)
bb
bb(SC)
min.max.
-1628V
028VL = 8 µH,
3.1.3Voltage at power transistor V
3.1.4Supply Voltage for Load Dump
V
protection
Power Stages
3.1.5Load current
3.1.6Maximum energy dissipation
I
E
single pulse
3.1.7Power dissipation (DC)
P
Logic Pins
3.1.8Voltage at input pin
3.1.9Current through input pin
3.1.10Voltage at sense enable pin
V
I
V
DS
bb(LD)
L
AS
tot
IN
IN
SEN
-52V
41VRI = 2 Ω
R
= 6.8 Ω
L
L(0)
T
3)
j(0)
= 2 A
= 150°C
-I
L(LIM)
A-
-0.58JI
-1.7 WTa = 85 °C
T
≤ 150 °C
j
-5
-16
-2.0
-8.0
-5
-16
10V
t ≤ 2min
2.0mA
t ≤ 2min
10V
t ≤ 2min
2)
4)
5)
3.1.11Current through sense enable
pin
3.1.12Current through sense pin
Data Sheet9V1.0, 2004-01-23
I
SEN
I
IS
-2.0
2.0mA
-8.0
-2510mA
t ≤ 2min
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