Datasheet BTS 5242-2L Datasheet (INFINEON)

Target Data Sheet, V1.2, August 2006

BTS 5242-2L

Smart High-Side Power Switch

PROFET

Two Channels, 25 mΩ

Automotive Power

Never stop thinking.

Smart High-Side Power Switch

BTS 5242-2L

Table of Contents Page

Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.1 Pin Assignment BTS 5242-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

4.3.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

5 Package Outlines BTS 5242-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Target Data Sheet 2 V1.2, 2006-08-14

Smart High-Side Power Switch

PROFET

Product Summary

The BTS 5242-2L is a dual channel high-side power switch
in PG-DSO-12-9 package providing embedded protective
functions.

The power transistor is built by a N-channel vertical power
MOSFET with charge pump. The device is monolithically
integrated in Smart

Operating voltage V

Over voltage protection V

SIPMOS technology.

bb(on)

bb(AZ)

BTS 5242-2L

PG-DSO-12-9

4.5 .. 28 V

41 V

On-State resistance R
Nominal load current (one channel active) I
Adjustable current limitation I
Current limitation repetitive I

Standby current for whole device with load I

Basic Features

• Very low standby current

•3.3 V and 5 V compatible logic pins

• Improved electromagnetic compatibility (EMC)

• Stable behavior at under voltage

• Logic ground independent from load ground

• Secure load turn-off while logic ground disconnected

• Very low leakage current from OUT to GND

• Green product (RoHS compliant)

DS(ON)

L(nom)

L(LIM)

L(SCr)

bb(OFF)

25 mΩ

6 A

7 A / 40 A

7 A / 40 A

7.5 µA

Type Ordering Code Package

BTS 5242-2L On request PG-DSO-12-9

Target Data Sheet 3 V1.2, 2006-08-14

Smart High-Side Power Switch

Protective Functions

• Reverse battery protection with external resistor

• Short circuit protection

• Overload protection

• Multi-step current limitation

• Adjustable current limitation

• Thermal shutdown with restart

• Over voltage protection with external resistor

• Loss of ground and loss of Vbb protection

• Electrostatic discharge protection (ESD)

Diagnostic Functions

• IntelliSense functionality for each channel

• Proportional load current sense signal by current source

• Open load detection in ON-state by load current sense

• Open load detection in OFF-state by voltage source

• Feedback on over temperature and current limitation in ON-state

• Suppressed thermal toggling of fault signal

BTS 5242-2L

Applications

• µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads

• All types of resistive, inductive and capacitive loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Target Data Sheet 4 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Overview

1Overview

The BTS 5242-2L is a dual channel high-side power switch (two times 25 mΩ) in PG-DSO-12-9

power package providing embedded protective functions. Integrated resistors at each input pin
(IN1, IN2, CLA) reduce external components.

The load current limitation can be adjusted in two steps by the current limit adjust pin (CLA).

The IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including
current sense function, open load in off state and over load alert.

The power transistor is built by a N-channel vertical power MOSFET with charge pump. The
inputs are ground referenced CMOS compatible. The device is monolithically integrated in
Smart

1.1 Block Diagram

SIPMOS technology.

channel 1

VBB

IN1

IS1

CLA

IN2

IS2

internal

power
supply

ESD

protecti on

channel 2

load cur r ent

sense

gate control

&

logic

control and protection circuit

char ge pum p

open load

detec tion

tem peratur e

sensor

equival ent to

channel 1

GND

cl am p for

inductive load

multi step

load current

limitation

OUT1

OUT2

Figure 1 Block Diagram

Target Data Sheet 5 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

1.2 Terms

Following figure shows all terms used in this target data sheet.

V

bb

V

IN1

V

IN2

V

Figure 2 Terms

IS1

I

IN1

IN1

I

IN2

IN2

I

IS1

IS1

I

IS2

BTS 5242-2L

IS2

V

IS2

I

CL A

CLA

V

CL A

VBB

GND

I

bb

I

GND

OUT1

OUT2

Overview

I

L1

I

L2

V

V

V

V

OUT1

DS2

OUT2

DS1

Ter m s2 ch . em f

Target Data Sheet 6 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

2 Pin Configuration

2.1 Pin Assignment BTS 5242-2L

(top view)

GND

IN1

IS1

IS2

IN2

VBB

1

2

3

4

5

6

12

11

10

9

8

7

heat slug (VBB)

Pin Configuration

VBB

OUT1

OUT1

OUT2

OUT2

CLA

Figure 3 Pin Configuration PG-DSO-12-9

2.2 Pin Definitions and Functions

Pin Symbol I/O

OD

2 IN1 I Input signal for channel 1

5 IN2 I Input signal for channel 2

3 IS1 O Diagnosis output signal channel 1

4 IS2 O Diagnosis output signal channel 2

7 CLA I Current limit adjust input for channel 1&2

10,11 OUT1

8, 9 OUT2

1)

1)

O Protected high-side power output channel 1

O Protected high-side power output channel 2

1 GND - Ground connection

6,12,

VBB - Positive power supply for logic supply as well as output

heat slug

Function

power supply

1)

All output pins of each channel have to be connected

Target Data Sheet 7 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Electrical Characteristics

3 Electrical Characteristics

3.1 Maximum Ratings

Stresses above the ones listed here may cause permanent damage to the device. Exposure to
maximum rating conditions for extended periods may affect device reliability.

T

= 25 °C (unless otherwise specified)

j

Pos. Parameter Symbol Limit Values Unit Test

Conditions

t ≤ 100 h

R = 0.2 Ω

1)

Power Supply

3.1.1 Supply voltage V

3.1.2 Current through ground pin I

3.1.3 Supply voltage for full short

V

circuit protection (single pulse)
(Tj = -40°C .. 150°C)

bb

GND

bb(SC)

min. max.

18

V

28

-150 mA t ≤ 2 min
0 28 V L = 8 µH

3.1.4 Voltage at power transistor V

3.1.5 Supply Voltage for Load Dump

V

protection

Power Stages

3.1.6 Load current I

3.1.7 Maximum energy dissipation

E

single pulse

3.1.8 Power dissipation (DC) P

Logic Pins

3.1.9 Voltage at input pin V

DS

bb(LD)

L

AS

tot

IN

-5

-16

52 V

V R

40
53

I

L(LIM)

A

130 mJ

1.4 W

19 V

= 2 Ω 2)

I

R

= 2.25 Ω

L

R

= 6.8 Ω

L

3)

4)

T

= 150°C

j(0)

I

= 6 A

L(0)

Vbb=12V

5)

T

= 85 °C

a

T

≤ 150 °C

j

t ≤ 2 min

3.1.10 Current through input pin I

Target Data Sheet 8 V1.2, 2006-08-14

IN

-2.0

-8.0

2.0 mA

t ≤ 2 min

Smart High-Side Power Switch

BTS 5242-2L

T

= 25 °C (unless otherwise specified)

j

Electrical Characteristics

Pos. Parameter Symbol Limit Values Unit Test

Conditions

t ≤ 2 min

t ≤ 2 min

3.1.11 Voltage at current limit adjust pin V

3.1.12 Current through current limit

I

adjust pin

3.1.13 Current through sense pin I

CLA

CLA

IS

min. max.

-5

19 V

-16

-2.0

2.0 mA

-8.0

-5 10 mA

Temperatures

3.1.14 Junction temperature T

3.1.15 Dynamic temperature increase

∆T

j

j

-40 150 °C

60 °C

while switching

3.1.16 Storage temperature T

stg

-55 150 °C

ESD Susceptibility

3.1.17 ESD susceptibility HBM
IN, CLA

OUT

1)

R and L describe the complete circuit impedance including line, contact and generator impedances

2)

Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator

3)

Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating
range. Protection features are not designed for continuous repetitive operation.

4)

Pulse shape represents inductive switch off: I

5)

Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for V

connection. PCB is vertical without blown air.

bb

L

V

ESD

IS

(t) = IL(0) * (1 - t / t

-1

-2

-4

); 0 < t < t

peak

1
2
4

peak

kV according to

EIA/JESD 22­A 114B

Target Data Sheet 9 V1.2, 2006-08-14

Smart High-Side Power Switch

0

T /°C

BTS 5242-2L

Power Stages

4 Block Description and Electrical Characteristics

4.1 Power Stages

The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump.

4.1.1 Output On-State Resistance

The on-state resistance R

T

. Figure 4 shows that dependencies for the typical on-state resistance . The behavior in reverse

j

DS(ON)

polarity mode is described in Section 4.2.2.

Vbb = 13.5 V Tj = 25°C

35

30

25

/mΩ

20

DS(ON)

R

15

10

-50 -25 0 25 50 75 100 125 15

depends on the supply voltage as well as the junction temperature

140
120
100

/mΩ

80

DS(ON)

60

R

40
20

0 5 10 15 20 25

V

/V

Figure 4 Typical On-State Resistance

4.1.2 Input Circuit

Figure 5 shows the input circuit of the BTS 5242-2L. There is an integrated input resistor that

makes external components obsolete. The current sink to ground ensures that the device switches
off in case of open input pin. The zener diode protects the input circuit against ESD pulses.

R

IN

IN

I

IN

GND

Input.emf

Figure 5 Input Circuit (IN1 and IN2)

Target Data Sheet 10 V1.2, 2006-08-14

Smart High-Side Power Switch

m

BTS 5242-2L

Power Stages

A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which
is optimized in terms of EMC emission.

IN

t

t

Swit chOn.emf

V

90%

30%

10%

OUT

t

ON

dV /dt

ON

dt

70%

dV /

OFF

40%

t

OFF

Figure 6 Switching a Load (resistive)

4.1.3 Inductive Output Clamp

When switching off inductive loads with high-side switches, the voltage V

drops below

OUT

ground potential, because the inductance intends to continue driving the current.

V

bb

GND

VBB

OUT

I

L

V

OUT

L,
R

L

Output Clamp .e

Figure 7 Output Clamp (OUT1 and OUT2)

To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps
that negative output voltage at a certain level (V

OUT(CL)

). See Figure 7 and Figure 8 for details.

Nevertheless, the maximum allowed load inductance is limited.

Target Data Sheet 11 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

V

V

OUT(CL)

OUT

V

bb

I

L

IN = 5V IN = 0V

t

t

Power Stages

I nductiveLoad.emf

Figure 8 Switching an Inductance

Maximum Load Inductance

While demagnetization of inductive loads, energy has to be dissipated in the BTS 5242-2L. This
energy can be calculated with following equation:

EVbbV

–()

OUT(CL)

V

OUT(CL)

----------------------

⋅⋅=

R

L



ln⋅ 1




RLI

----------------------–

V

OUT(CL)

⋅

L

I

+

L

L

-------

R

L

Following equation simplifies under the assumption of RL = 0:

E

LI

2

1

⋅=



L





2

1

---

V

----------------------–

V

OUT(CL)

bb

The energy, which is converted into heat, is limited by the thermal design of the component. See

Figure 9 for the maximum allowed energy dissipation.

To be added after characterization of first samples

Figure 9 Maximum energy dissipation single pulse, T

Target Data Sheet 12 V1.2, 2006-08-14

j,Start

= 150°C

Smart High-Side Power Switch

BTS 5242-2L

Power Stages

4.1.4 Electrical Characteristics

V

= 9 V to 16 V, T

bb

typical values: Vbb = 13.5 V, Tj = 25 °C

Pos. Parameter Symbol Limit Values Unit Test Conditions

General

4.1.1 Operating voltage V

4.1.2 Operating current

4.1.3 Standby current for

whole device with load

= -40 °C to +150 °C (unless otherwise specified)

j

min. typ. max.

4.5 28 V V

mA VIN = 5 V

1.6

3.2

4
8

µA V

one channel

all channels

bb

I

GND

I

bb(OFF)

5 7.5

7.5
20

= 4.5 V

IN

R

= 12 Ω

L

V

< 0.5 V

DS

= 0 V

IN

V

= 0 V

CLA

V

< V

OUT

T

= 25°C

j

T

= 105°C

j

T

= 150°C

j

OUT(OL)

Output characteristics

4.1.4 On-State resistance per

R

channel

4.1.5 Output voltage drop

V

limitation at small load
currents

4.1.6 Nominal load current

I

per channel

one channel active

two channels active

ISO load current per

I

channel

one channel active

two channels active

4.1.7 Output clamp V

4.1.8 Output leakage current

I

per channel

DS(ON)

DS(NL)

L(nom)

L(ISO)

OUT(CL)

L(OFF)

mΩ IL = 5 A

19
35

25
48

T

= 25 °C

j

T

= 150 °C

j

40 mV IL < 0.5 A

5.5

4.1

13
13

A T

6

4.5

A T

15
15

= 85 °C

a

T

≤ 150 °C

j

= 85 °C

c

V

= 0.5 V

DS

-24 -20 -17 V IL = 40 mA

1.5 8 µA VIN = 0 V

1) 2)

2)

Target Data Sheet 13 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

V

= 9 V to 16 V, T

bb

typical values:

= -40 °C to +150 °C (unless otherwise specified)

j

V

= 13.5 V, Tj = 25 °C

bb

Power Stages

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

Thermal Resistance

4.1.9 Junction to case R

4.1.10 Junction to ambient

R

one channel on
all channels on

thjc

thja

40
33

1.8 K/W

K/W

1)

Input characteristics

4.1.11 Input resistance for pin

R

IN

2.0 3.5 5.5 kΩ

IN

4.1.12 L-input level for pin IN V

4.1.13 H-input level for pin IN V

4.1.14 Hysteresis for pin IN ∆V

IN(L)

IN(H)

IN

-0.3 1.0 V

2.4 V

0.5 V

3)

4.1.15 L-input current for pin

I

IN(L)

3 40 µA VIN = 0.4 V

IN

4.1.16 H-input current for pin

I

IN(H)

20 50 90 µA VIN = 5 V

IN

Timings

4.1.17 Turn-on time to

90% V

bb

4.1.18 Turn-off time to

10% V

bb

4.1.19 slew rate

10% to 30% V

bb

4.1.20 slew rate

70% to 40% V

1)

Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for V

2)

Not subject to production test, parameters are calculated from R

3)

Not subject to production test, specified by design

connection. PCB is vertical without blown air.

bb

bb

t

ON

t

OFF

dV/ dt

-dV/
d

t

OFF

ON

90 250 µs R

V

100 250 µs R

V

0.1 0.25 0.45 V/µs R

V

0.1 0.25 0.45 V/µs R

V

and R

DS(ON)

th

= 12 Ω

L

= 13.5 V

bb

= 12 Ω

L

= 13.5 V

bb

= 12 Ω

L

= 13.5 V

bb

= 12 Ω

L

= 13.5 V

bb

Note: Characteristics show the deviation of parameter at the given supply voltage and junction

temperature. Typical values show the typical parameters expected from manufacturing.

Target Data Sheet 14 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Protection Functions

4.2 Protection Functions

The device provides embedded protective functions. Integrated protection functions are designed
to prevent IC destruction under fault conditions described in the target data sheet. Fault conditions
are considered as “outside” normal operating range. Protection functions are neither designed for
continuous nor repetitive operation.

4.2.1 Over Load Protection

The load current I
There are two steps of current limitation. They can be selected by the CLA pin, but are
additionally selected automatically depending on the voltage
Please note that the voltage at the OUT pin is
details.

40

is limited by the device itself in case of over load or short circuit to ground.

OUT

V

across the power DMOS.

DS

V

- VDS. Please refer to following figure for

bb

I

L

CLA = L

30

20

10

CLA = H

5 1015202530

V

DS

Curr ent Limit at ion.em f

Figure 10 Current Limitation (minimum values)

Current limitation is realized by increasing the resistance of the device which leads to rapid
temperature rise inside. A temperature sensor for each channel causes an overheated channel to
switch off to prevent destruction. After cooling down with thermal hysteresis, the channel
switches on again. Please refer to

IN

I

I

L

I

IS

L(LIM)

V

IS( fau lt)

Figure 11 for details.

I

L(SCr )

t

t

t

OverLoad .emf

Figure 11 Shut Down by Over Temperature

The CLA pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. Please
note that the thresholds for high and low state differ between IN and CLA.

Target Data Sheet 15 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Protection Functions

4.2.2 Reverse Polarity Protection

In case of reverse polarity, the intrinsic body diode causes power dissipation. Use following

∑

P

diss(rev)

fomular for estimation of total power dissipation

P

diss(rev)

=

all channels

The reverse current through the power transistors has to be limited by the connected loads. The
reverse current through the ground connection has to be limited either by a resistor or by a pair of
resistor and diode. The current through sense pins IS1 and IS2 has to be limited (please refer to
maximum ratings on

Page 8). The temperature protection is not active during reverse polarity.

in reverse polarity mode.

V

DS(rev)IL

⋅()

4.2.3 Over Voltage Protection

In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp
mechanism for over voltage protection. The current through the ground connection has to be
limited e.g. by a resistor.

As shown in Figure 12, in case of supply voltages greater than V

bb(AZ)

opens and the voltage across logic part is clamped. As a result, the ground potential rises to V

- V

bb(AZ)

. Due to the ESD zener diodes, the potential at pin IN1, IN2 and CLA rises almost to

that potential, depending on the impedance of the connected circuitry.

VBB

OUT

IN

IS

CLA

ZD

ZD

R

IN

R

CL A

ESD

logic

AZ

GND

, the power transistor

bb

V

OUT

R

GND

OverV olt age. emf

Figure 12 Over Voltage Protection

Target Data Sheet 16 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Protection Functions

4.2.4 Loss of Ground Protection

In case of complete loss of the device ground connections, but connected load ground, the

5242-2L securely changes to or stays in off state.

BTS

Target Data Sheet 17 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Protection Functions

4.2.5 Electrical Characteristics

V

= 9 V to 16 V, T

bb

typical values: Vbb = 13.5 V, Tj = 25 °C

Pos. Parameter Symbol Limit Values Unit Test Conditions

Over Load Protection

4.2.1 Load current limitation I

4.2.2 Repetitive short circuit
current limitation

4.2.3 Initial short circuit shut
down time

= -40 °C to +150 °C (unless otherwise specified)

j

min. typ. max.

L(LIM)

I

L(SCr)

40

7

50
11

60
14

A VDS = 5 V

A Tj = T

40

7

t

OFF(SC)

ms T

0.8
4

CLA = 2 V
CLA = 4 V

j(SC)

CLA = 0 V
CLA = 5 V

= 25 °C

jStart

CLA = 0 V
CLA = 5 V

1)

1)

4.2.4 Thermal shut down

T

temperature

4.2.5 Thermal hysteresis ∆T

Reverse Battery

4.2.6 Drain-Source diode
voltage (V

OUT

> Vbb)

-V

Over Voltage

4.2.7 Over voltage protection V

Loss of GND

4.2.8 Output current while

I

L(GND)

GND disconnected

Current Limit Adjust (CLA)

4.2.9 Input resistance for pin

R

CLA

j(SC)

j

DS(rev)

bb(AZ)

CLA

150 170

1)

10 K -

900 mV I

°C

1)

= -5 A

L

T

=150 °C

j

41 47 52 V Ibb = 2 mA

2 mA IIN = 0 1)

I

= 0

GND

I

= 0

IS

2.0 3.5 5.5 kΩ

2)

4.2.10 L-input level for pin

V

CLA(L)

-0.3 2.0 V

CLA

4.2.11 H-input level for pin

V

CLA(H)

4.0 V

CLA

Target Data Sheet 18 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

V

= 9 V to 16 V, T

bb

typical values:

= -40 °C to +150 °C (unless otherwise specified)

j

V

= 13.5 V, Tj = 25 °C

bb

Protection Functions

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

4.2.12 L-input current for pin

I

CLA(L)

3 40 µA V

CLA

= 0.4 V

CLA

4.2.13 H-input current for pin

I

CLA(H)

20 50 90 µA V

CLA

= 5 V

CLA

1)

Not subject to production test, specified by design

2)

no connection at these pins

Target Data Sheet 19 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Diagnosis

4.3 Diagnosis

For diagnosis purpose, the BTS 5242-2L provides an IntelliSense signal at pins IS1 and IS2. This

I

means in detail, the current sense signal
= IL / IIS), is provided as long as no failure mode (see Table 1) occurs. In case of a failure mode,
the voltage V

R

lim

µC

R

lim

R

IS1RIS2

IS(fault)

is fed to the diagnosis pin.

IN1

R

IN1

channel 1

IN2

R

IN2

IS2

GND

channel 2

, a proportional signal to the load current (ratio k

IS

S

OL

VBB

I

IS1

gate control

OUT1IS1

OUT2

0

V

1

IS( fau lt)

gate control

diagnosis

over temperature

over load

open load @ off

I

IS2

V

OUT(OL)

R

load

ILIS

OL

Sense. emf

Figure 13 Block Diagram: Diagnosis

Table 1Truth Table

Operation Mode Input

Level

Output Level Diagnostic

Output

Normal Operation (OFF) L Z Z

Short Circuit to GND Z Z

Over Temperature Z Z

Short Circuit to V

bb

Open Load < V

Target Data Sheet 20 V1.2, 2006-08-14

> V

V

bb

OUT(OL)

OUT(OL)

V

V

IS

IS

= V

= V

IS(fault)

Z

IS(fault)

Smart High-Side Power Switch

BTS 5242-2L

Diagnosis

Table 1 Truth Table

Operation Mode Input

Level

Normal Operation (ON) H ~V

Current Limitation < V

Short Circuit to GND ~GND VIS = V

Over Temperature Z VIS = V

Short Circuit to V

bb

Open Load ~V

L = Low Level, H = High Level, Z = high impedance, potential depends on external circuit

Output Level Diagnostic

Output

I

= IL / k

IS

V

= V

IS

I

< IL / k

IS

ILIS

IS(fault)

IS(fault)

IS(fault)

ILIS

Z

V

bb

bb

bb

bb

4.3.1 ON-State Diagnosis

The standard diagnosis signal is a current sense signal proportional to the load current. The

k

accuracy of the ratio (
details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense

R

resistors

> 500 Ω. A typical value is 4.7 kΩ

IS

= IL / IIS) depends on the temperature. Please refer to Figure 14 for

ILIS

7500

7000

6500

6000

ILIS

k

5500

5000

4500

4000

0 1 2 3 4 5 6

Figure 14 Current sense ratio k

ILIS

1)

I

/A

1)

The curves show the behavior based on characterization data. The marked points are guaranteed in this Target Data Sheet
in

Section 4.3.3 (Position 4.3.7).

Target Data Sheet 21 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Details about timings between the diagnosis signal IIS and the output voltgage V

I

current

V

in ON-state can be found in Figure 15.

L

IN

OUT

I

OFF

I

L

IS

ON

t

ON

t

sIS( O N)

normal operation over load (current limitation)

t

t

sIS( L C)

sIS( L C)

V

IS( fa ul t)

Diagnosis

and the load

OUT

/ R

S

Swit chOn .emf

t

t

t

t

Figure 15 Timing of Diagnosis Signal in ON-state

In case of over-current as well as over-temperature, the voltage V

IS(fault)

is fed to the diagnosis
pins as long as the according input pin is high. This means, even when the device keeps switching
on and off in over-load condition, the failure signal is constantly available. Please refer to

Figure 16 for details.

T

j

I

L

I

IS

over load (current li mitation & thermal toggling) normal operation

t

sIS( L C)

V

/ R

IS( fa ul t)

S

t

hIS(OTR)

T

j(SC)

t

t

t

OverTemp. emf

Figure 16 Timing of Diagnosis Signal in Over Load Condition

Target Data Sheet 22 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Diagnosis

4.3.2 OFF-State Diagnosis

Details about timings between the diagnosis signal IIS and the output voltgage V

I

current

V

in OFF-state can be found in Figure 17.

L

IN

ON OFF

OUT

I

IS

Open Load, pull-up resistor active

t

d(fault)

V

/ R

IS( fa ul t)

S

pul l -u p resi st o r

inactive

t

s( fau lt)

Figure 17 Timing of Diagnosis Signal in OFF-state

For open load diagnosis in off-state an external output pull-up resistor (ROL) is recommended.
For caluclation of pull-up resistor, the leakage currents and the open load threshold voltage

V

OUT(OL)

has to be taken into account.

and the load

OUT

Swit chOff.emf

t

t

t

I

leakage

defines the leakage current in the complete system including I

e.g. due to humidity.

V

bb(min)

V

R

OL

bb(min)

---------------------------------------------------------=

is the minimum supply voltage at which the open load diagnosis in

V

–

OUT(OL,max)

I

leakage

and external leakages

L(OL)

off-state must be ensured.

To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended.
The stand-by current of the BTS
on low level or left open and

V

(

OUT

> V

OUT(OL)

and VIN = 0 V), the fault voltage V

5242-2L is minimized, when both input pins (IN1 and IN2) are

V

OUT

< V

OUT(OL)

. In case of open load in off state

IS(fault)

drives a current through the sense
resistor, which causes an increase in supply current. To reduce the stand-by current to a minimum,
the open load condition needs to be suppressed.

The resistors R

are recommended to limit the current through the sense pins IS1 and IS2 in case

lim

of reverse polarity and over voltage.

Target Data Sheet 23 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Diagnosis

4.3.3 Electrical Characteristics

V

= 9 V to 16 V, T

bb

typical values: Vbb = 13.5 V, Tj = 25 °C

Pos. Parameter Symbol Limit Values Unit Test Conditions

Open Load at OFF state

4.3.1 Open load detection

threshold voltage

4.3.2 Leakage current into

OUT

4.3.3 Sense signal in case of

open load

4.3.4 Sense signal current

limitation

= -40 °C to +150 °C (unless otherwise specified)

j

min. typ. max.

V

OUT(OL)

-I

L(OL)

V

IS(fault)

I

IS(LIM)

2.0 3.2 4.4 V

1 µA V

5.0 6.2 8 V V

4 mA V

OUT

= 0 V

IN

V

OUT

I

= 1 mA

IS

= 0 V

IS

V

= 0 V

IN

V

OUT

= 5 V

> V

OUT(OL)

> V

OUT(OL)

4.3.5 Sense signal invalid

after negative input
slope

4.3.6 Fault signal settling

time

Load Current Sense

4.3.7 Current sense ratio k

I

= 0.5 A

L

I

= 3.0 A

L

I

= 6.0 A

L

4.3.8 Current sense voltage

limitation

4.3.9 Current sense leakage/

offset current

4.3.10 Current sense settling

time to I

static ±10%

IS

after positive input
slope

t

d(fault)

t

s(fault)

ILIS

V

IS(LIM)

I

IS(LH)

t

sIS(ON)

1.2 ms V

= 5 V to 0 V

IN

V

OUT

200 µs VIN = 0 V

V

OUT

V

>

I

= 1 mA

IS

V

= 5 V

IN

4450
4750
4900

5800
5400
5350

6960
6050
5800

5.4 6.5 7.5 V IL = 5 A

5 µA V

400 µs V

= 5 V

IN

I

= 0 A

L

= 0 V to 5 V

IN

I

= 5 A

L

> V

OUT(OL)

1)

= 0 V to

OUT(OL)

1)

Target Data Sheet 24 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

V

= 9 V to 16 V, T

bb

typical values:

= -40 °C to +150 °C (unless otherwise specified)

j

V

= 13.5 V, Tj = 25 °C

bb

Diagnosis

Pos. Parameter Symbol Limit Values Unit Test Conditions

min. typ. max.

4.3.11 Current sense settling

time to I

static ±10%

IS

t

sIS(LC)

300 µs

V

= 5 V

IN

I

= 3 A to 5 A

L

after change of load
current

4.3.12 Fault signal hold time

t

hIS(OTR)

1.2 ms

1)

after thermal restart

1)

Not subject to production test, specified by design

1)

Target Data Sheet 25 V1.2, 2006-08-14

Smart High-Side Power Switch

ø

Y

BTS 5242-2L

5 Package Outlines BTS 5242-2L

PG-DSO-12-9

(Plastic Dual Small Outline Package)

1)

±0.1

0.8 x 0.1

6.4

A

8˚ 8˚

0.1 12x

5 x1=

Depth

-0.05

0.4

1
5

+0.13

5.1

4)

16

7.8

(Heatslug)

0.25

±0.1

712

±0.1

3)

0.8

C

AB

(1.8)

2)

C

+0.1

0

±0.1

2.35

±0.1

4.2

±0.05

0.1

0.1

Seating Plane

M

±0.1

1.6

(1.55)

2.6 MAX.

Package Outlines BTS 5242-2L

1)

±0.1

7.5

B

+0.075

-0.035

0.25

C

(4.4)

10.3

0.7

(0.2)

±0.3

±3˚

5˚

±0.15

0.25 B

1)

Does not include plastic or metal protrusion of 0.15 max. per side

2)

Stand OFF

3)

Stand OUT

4)

Pin 1 Index Marking; Polish finish
All package corners max. R 0.25

To meet the world-wide customer requirements for environmentally friendly products and to be
compliant with government regulations the device is available as a green product. Green products
are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to
IPC/JEDEC J-STD-020)

Please specifiy the package needed (e.g green package) when placing an order.

ou can find all of our packages, sorts of packing and others in our Infineon

Internet Page “Products”: http://www.infineon.com/products.

SMD = Surface Mounted Device

Dimensions in mm

Target Data Sheet 26 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

6 Revision History

Version Date Changes

V1.2 2006-08-14Creation of the green target datasheet.

Delta sheet to the grey datasheet BTS5242L datasheet of October the
29th, 2004
Parameter 3.16 : change to 130mJ with 12V battery
Figure 9 set to tbd
Parameter 4.1.7 : .24V min, -17V max

Revision History

Target Data Sheet 27 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Revision History

Target Data Sheet 28 V1.2, 2006-08-14

Smart High-Side Power Switch

BTS 5242-2L

Edition 2006-08-14

Published by Infineon Technologies AG,
St.-Martin-Strasse 53,

D-81541 München, Germany

© Infineon Technologies AG 8/22/06.

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide.

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.

Target Data Sheet 29 V1.2, 2006-08-14

http://www.infineon.com

Published by Infineon Technologies AG